Research graph
References from Resolving Lateral Heat Transport in GaN‐on‐SiC HEMT Structures via Transient Thermometry. Local targets link to admitted publications; unresolved targets remain external evidence.
10.1016/b978-0-12-821084-0.00007-x
10.1016/b978-0-12-821084-0.00007-x · External reference
10.1109/jeds.2018.2860792
10.1109/jeds.2018.2860792 · External reference
10.1109/jeds.2024.3436820
10.1109/jeds.2024.3436820 · External reference
10.1063/5.0036424
10.1063/5.0036424 · External reference
10.1016/j.prime.2025.101060
10.1016/j.prime.2025.101060 · External reference
10.1016/j.mejo.2022.105370
10.1016/j.mejo.2022.105370 · External reference
10.3390/electronics14091764
10.3390/electronics14091764 · External reference
10.1063/5.0261673
10.1063/5.0261673 · External reference
10.1063/5.0282836
10.1063/5.0282836 · External reference
10.1063/5.0310464
10.1063/5.0310464 · External reference
10.1063/5.0031404
10.1063/5.0031404 · External reference
10.1103/physrevmaterials.6.104602
10.1103/physrevmaterials.6.104602 · External reference
10.1016/s0022-0248(02)01753-0
10.1016/s0022-0248(02)01753-0 · External reference
10.2320/matertrans.mrp2007109
10.2320/matertrans.mrp2007109 · External reference
10.1063/1.4989626
10.1063/1.4989626 · External reference
10.1103/physrevmaterials.3.014601
10.1103/physrevmaterials.3.014601 · External reference
10.1134/s0021364020140039
10.1134/s0021364020140039 · External reference
10.1016/j.mtphys.2017.12.005
10.1016/j.mtphys.2017.12.005 · External reference
10.1088/1402-4896/ad4b69
10.1088/1402-4896/ad4b69 · External reference
10.1080/26941112.2021.1980356
10.1080/26941112.2021.1980356 · External reference
10.1109/ted.2022.3227894
10.1109/ted.2022.3227894 · External reference
10.1109/ted.2025.3546594
10.1109/ted.2025.3546594 · External reference
10.1557/proc-0892-ff13-05
10.1557/proc-0892-ff13-05 · External reference
10.1063/1.2336299
10.1063/1.2336299 · External reference
10.1109/ims40175.2024.10600290
10.1109/ims40175.2024.10600290 · External reference
10.1109/ted.2024.3478180
10.1109/ted.2024.3478180 · External reference
10.1109/led.2008.919779
10.1109/led.2008.919779 · External reference
10.1109/ted.2017.2679978
10.1109/ted.2017.2679978 · External reference
10.1109/semi-therm.2018.8357369
10.1109/semi-therm.2018.8357369 · External reference
10.1109/led.2016.2595400
10.1109/led.2016.2595400 · External reference
10.1109/tpel.2025.3539756
10.1109/tpel.2025.3539756 · External reference
10.1109/ted.2019.2906943
10.1109/ted.2019.2906943 · External reference
10.1063/5.0309620
10.1063/5.0309620 · External reference
10.1109/ted.2009.2032614
10.1109/ted.2009.2032614 · External reference
10.1109/tmtt.2018.2848932
10.1109/tmtt.2018.2848932 · External reference
10.23919/eumic58042.2023.10288814
10.23919/eumic58042.2023.10288814 · External reference
10.1109/tmtt.2024.3458189
10.1109/tmtt.2024.3458189 · External reference
Resistive Nickel Temperature Sensor Integrated Into Short‐Gate Length AlGaN/GaN HEMT Dedicated to RF Applications
2018 · External reference
10.1109/led.2014.2379213
10.1109/led.2014.2379213 · External reference
10.1109/ted.2020.2983277
10.1109/ted.2020.2983277 · External reference
10.1007/978-3-7091-8752-4
10.1007/978-3-7091-8752-4 · External reference
10.1063/1.4765351
10.1063/1.4765351 · External reference
10.1088/0268-1242/19/3/024
10.1088/0268-1242/19/3/024 · External reference
Unresolved reference
1997 · External reference
10.1016/j.sse.2010.11.002
10.1016/j.sse.2010.11.002 · External reference
10.1063/1.5046944
10.1063/1.5046944 · External reference
10.1038/s43586-025-00425-8
10.1038/s43586-025-00425-8 · External reference
10.1103/physrevb.89.115301
10.1103/physrevb.89.115301 · External reference
10.1143/jjap.50.11rg02
10.1143/jjap.50.11rg02 · External reference
10.1016/j.jnucmat.2007.05.016
10.1016/j.jnucmat.2007.05.016 · External reference
10.1002/9781118411285
10.1002/9781118411285 · External reference
Unresolved reference
External reference
10.1002/9781118411285
10.1002/9781118411285 · ExternalCitation · doi-reference
10.1007/978-3-7091-8752-4
10.1007/978-3-7091-8752-4 · ExternalCitation · doi-reference
10.1016/b978-0-12-821084-0.00007-x
10.1016/b978-0-12-821084-0.00007-x · ExternalCitation · doi-reference
10.1016/j.jnucmat.2007.05.016
10.1016/j.jnucmat.2007.05.016 · ExternalCitation · doi-reference
10.1016/j.mejo.2022.105370
10.1016/j.mejo.2022.105370 · ExternalCitation · doi-reference
10.1016/j.mtphys.2017.12.005
10.1016/j.mtphys.2017.12.005 · ExternalCitation · doi-reference
10.1016/j.prime.2025.101060
10.1016/j.prime.2025.101060 · ExternalCitation · doi-reference
10.1016/j.sse.2010.11.002
10.1016/j.sse.2010.11.002 · ExternalCitation · doi-reference
10.1016/s0022-0248(02)01753-0
10.1016/s0022-0248(02)01753-0 · ExternalCitation · doi-reference
10.1038/s43586-025-00425-8
10.1038/s43586-025-00425-8 · ExternalCitation · doi-reference
10.1063/1.2336299
10.1063/1.2336299 · ExternalCitation · doi-reference
10.1063/1.4765351
10.1063/1.4765351 · ExternalCitation · doi-reference
10.1063/1.4989626
10.1063/1.4989626 · ExternalCitation · doi-reference
10.1063/1.5046944
10.1063/1.5046944 · ExternalCitation · doi-reference
10.1063/5.0031404
10.1063/5.0031404 · ExternalCitation · doi-reference
10.1063/5.0036424
10.1063/5.0036424 · ExternalCitation · doi-reference
10.1063/5.0261673
10.1063/5.0261673 · ExternalCitation · doi-reference
10.1063/5.0282836
10.1063/5.0282836 · ExternalCitation · doi-reference
10.1063/5.0309620
10.1063/5.0309620 · ExternalCitation · doi-reference
10.1063/5.0310464
10.1063/5.0310464 · ExternalCitation · doi-reference
10.1080/26941112.2021.1980356
10.1080/26941112.2021.1980356 · ExternalCitation · doi-reference
10.1088/0268-1242/19/3/024
10.1088/0268-1242/19/3/024 · ExternalCitation · doi-reference
10.1088/1402-4896/ad4b69
10.1088/1402-4896/ad4b69 · ExternalCitation · doi-reference
10.1103/physrevb.89.115301
10.1103/physrevb.89.115301 · ExternalCitation · doi-reference
10.1103/physrevmaterials.3.014601
10.1103/physrevmaterials.3.014601 · ExternalCitation · doi-reference
10.1103/physrevmaterials.6.104602
10.1103/physrevmaterials.6.104602 · ExternalCitation · doi-reference
10.1109/ims40175.2024.10600290
10.1109/ims40175.2024.10600290 · ExternalCitation · doi-reference
10.1109/jeds.2018.2860792
10.1109/jeds.2018.2860792 · ExternalCitation · doi-reference
10.1109/jeds.2024.3436820
10.1109/jeds.2024.3436820 · ExternalCitation · doi-reference
10.1109/led.2008.919779
10.1109/led.2008.919779 · ExternalCitation · doi-reference
10.1109/led.2014.2379213
10.1109/led.2014.2379213 · ExternalCitation · doi-reference
10.1109/led.2016.2595400
10.1109/led.2016.2595400 · ExternalCitation · doi-reference
10.1109/semi-therm.2018.8357369
10.1109/semi-therm.2018.8357369 · ExternalCitation · doi-reference
10.1109/ted.2009.2032614
10.1109/ted.2009.2032614 · ExternalCitation · doi-reference
10.1109/ted.2017.2679978
10.1109/ted.2017.2679978 · ExternalCitation · doi-reference
10.1109/ted.2019.2906943
10.1109/ted.2019.2906943 · ExternalCitation · doi-reference
10.1109/ted.2020.2983277
10.1109/ted.2020.2983277 · ExternalCitation · doi-reference
10.1109/ted.2022.3227894
10.1109/ted.2022.3227894 · ExternalCitation · doi-reference
10.1109/ted.2024.3478180
10.1109/ted.2024.3478180 · ExternalCitation · doi-reference
10.1109/ted.2025.3546594
10.1109/ted.2025.3546594 · ExternalCitation · doi-reference
10.1109/tmtt.2018.2848932
10.1109/tmtt.2018.2848932 · ExternalCitation · doi-reference
10.1109/tmtt.2024.3458189
10.1109/tmtt.2024.3458189 · ExternalCitation · doi-reference
10.1109/tpel.2025.3539756
10.1109/tpel.2025.3539756 · ExternalCitation · doi-reference
10.1134/s0021364020140039
10.1134/s0021364020140039 · ExternalCitation · doi-reference
10.1143/jjap.50.11rg02
10.1143/jjap.50.11rg02 · ExternalCitation · doi-reference
10.1557/proc-0892-ff13-05
10.1557/proc-0892-ff13-05 · ExternalCitation · doi-reference
10.2320/matertrans.mrp2007109
10.2320/matertrans.mrp2007109 · ExternalCitation · doi-reference
10.23919/eumic58042.2023.10288814
10.23919/eumic58042.2023.10288814 · ExternalCitation · doi-reference
10.3390/electronics14091764
10.3390/electronics14091764 · ExternalCitation · doi-reference
