Research graph
References from <scp>3D</scp> integration of <scp>2D</scp> electronics for <scp>AI</scp> hardware. Local targets link to admitted publications; unresolved targets remain external evidence.
Neuromorphic computing at scale
10.1038/s41586-024-08253-8 · 2025 · External reference
A compute‐in‐memory chip based on resistive random‐access memory
10.1038/s41586-022-04992-8 · 2022 · External reference
Promises and prospects of two‐dimensional transistors
10.1038/s41586-021-03339-z · 2021 · External reference
AI and memory wall
10.1109/mm.2024.3373763 · 2024 · External reference
Unresolved reference
2025 · External reference
Energy‐efficient abundant‐data computing: the N3XT 1,000 x
2015 · External reference
A RISC‐V 32‐bit microprocessor based on two‐dimensional semiconductors
10.1038/s41586-025-08759-9 · 2025 · External reference
Unresolved reference
2022 · External reference
Addressing the connectivity bottleneck with BEOL FeFETs for 3‐D CMOS+ X Ising machines
10.1109/ted.2025.3562510 · 2025 · External reference
Addressing interconnect challenges for enhanced computing performance
10.1126/science.adk6189 · 2024 · External reference
Energy‐efficient computing at cryogenic temperatures
10.1038/s41928-024-01278-x · 2024 · External reference
Disrupting the DRAM roadmap with capacitor‐less IGZO‐DRAM technology
10.1038/s44287-025-00162-w · 2025 · External reference
Thermal management materials for 3D‐stacked integrated circuits
10.1038/s44287-025-00196-0 · 2025 · External reference
Unresolved reference
2020 · External reference
Memristor‐based analog computation and neural network classification with a dot product engine
10.1002/adma.201705914 · 2018 · External reference
Energy‐efficient monolithic 3‐D SRAM cell with BEOL MoS2 FETs for SoC scaling
10.1109/ted.2020.3018099 · 2020 · External reference
Advanced packaging of chiplets for future computing needs
10.1038/s41928-024-01175-3 · 2024 · External reference
Building 3D integrated circuits with electronics and photonics
10.1038/s41928-024-01187-z · 2024 · External reference
Synaptic and neural behaviours in a standard silicon transistor
10.1038/s41586-025-08742-4 · 2025 · External reference
Dendrocentric learning for synthetic intelligence
10.1038/s41586-022-05340-6 · 2022 · External reference
3D‐stacked memory architectures for multi‐core processors
10.1145/1394608.1382159 · 2008 · External reference
Unresolved reference
2016 · External reference
Memory devices and applications for in‐memory computing
10.1038/s41565-020-0655-z · 2020 · External reference
The growing memristor industry
10.1038/s41586-025-08733-5 · 2025 · External reference
Compute in‐memory with non‐volatile elements for neural networks: a review from a co‐design perspective
10.1002/adma.202204944 · 2023 · External reference
Monolithic 3D integration of 2D transistors and vertical RRAMs in 1T‐4R structure for high‐density memory
10.1038/s41467-023-41736-2 · 2023 · External reference
An electronic silicon‐based memristor with a high switching uniformity
10.1038/s41928-019-0204-7 · 2019 · External reference
Anomalous resistive switching in memristors based on two‐dimensional palladium diselenide using heterophase grain boundaries
10.1038/s41928-021-00573-1 · 2021 · External reference
In‐memory computing using memristor arrays with ultrathin 2D PdSeOx/PdSe2 heterostructure
10.1002/adma.202201488 · 2022 · External reference
Strain engineering of vertical molybdenum ditelluride phase‐change memristors
10.1038/s41928-023-01071-2 · 2024 · External reference
Advancements in 2D layered material memristors: unleashing their potential beyond memory
10.1038/s41699-024-00522-4 · 2024 · External reference
Beyond von Neumann architecture: brain‐inspired artificial neuromorphic devices and integrated computing
10.1002/aelm.202300839 · 2024 · External reference
Free‐standing two‐dimensional ferro‐ionic memristor
10.1038/s41467-024-48810-3 · 2024 · External reference
Hybrid architecture based on two‐dimensional memristor crossbar array and CMOS integrated circuit for edge computing
10.1038/s41699-021-00284-3 · 2022 · External reference
Heterogeneous integration of 2D memristor arrays and silicon selectors for compute‐in‐memory hardware in convolutional neural networks
10.1038/s41467-025-58039-3 · 2025 · External reference
Monolithic 3D integration of 2D materials‐based electronics towards ultimate edge computing solutions
10.1038/s41563-023-01704-z · 2023 · External reference
On‐chip direct synthesis of boron nitride memristors
10.1038/s41565-025-01988-z · 2025 · External reference
Thousands of conductance levels in memristors integrated on CMOS
10.1038/s41586-023-05759-5 · 2023 · External reference
Monolithically‐integrated van der Waals synaptic memory via bulk Nano‐crystallization
10.1002/advs.202510961 · 2025 · External reference
Current status and prospects of memristors based on novel 2D materials
10.1039/c9mh02033k · 2020 · External reference
Memristors with analogue switching and high on/off ratios using a van der Waals metallic cathode
10.1038/s41928-024-01269-y · 2025 · External reference
Recent advances in in‐memory computing: exploring memristor and memtransistor arrays with 2D materials
10.1007/s40820-024-01335-2 · 2024 · External reference
A highly crystalline single layer 2D polymer for low variability and excellent scalability molecular memristors
10.1002/adma.202208377 · 2023 · External reference
Wafer‐scale and low‐temperature growth of 1T‐WS2 film for efficient and stable hydrogen evolution reaction
10.1002/smll.201905000 · 2020 · External reference
Low‐temperature and large‐scale production of a transition metal sulfide vertical heterostructure and its application for photodetectors
10.1021/acsami.0c19666 · 2021 · External reference
Memristors based on 2D materials as an artificial synapse for neuromorphic electronics
10.1002/adma.202002092 · 2020 · External reference
Wafer‐scale solution‐processed 2D material analog resistive memory array for memory‐based computing
10.1038/s41467-022-30519-w · 2022 · External reference
Robust memristors based on layered two‐dimensional materials
10.1038/s41928-018-0021-4 · 2018 · External reference
90% yield production of polymer nano‐memristor for in‐memory computing
10.1038/s41467-021-22243-8 · 2021 · External reference
Low‐temperature synthesis of wafer‐scale MoS2‐WS2 vertical heterostructures by single‐step penetrative plasma sulfurization
10.1021/acsnano.0c06989 · 2021 · External reference
Patchwork‐structured heterointerface of 1T‐WS2/a‐WO3 with sustained hydrogen spillover as a highly efficient hydrogen evolution reaction electrocatalyst
10.1021/acsami.2c03584 · 2022 · External reference
High‐performance memristors based on ultrathin 2D copper chalcogenides
10.1002/adma.202108313 · 2022 · External reference
A reconfigurable heterostructure transistor array for monocular 3D parallax reconstruction
10.1038/s41928-024-01261-6 · 2025 · External reference
Twelve‐inch electrically anisotropic boridene for optoelectronic computing
10.1038/s41565-026-02122-3 · 2026 · External reference
Monolithic cell‐on‐memristor architecture enables wafer‐scale integration of oscillatory chemoreceptors for bio‐realistic gustatory chips
10.1038/s41563-025-02436-y · 2026 · External reference
Electron release via internal polarization fields for optimal S‐H bonding states
10.1002/adma.202411211 · 2025 · External reference
Artificial room‐temperature ferromagnetism of bulk van der Waals VSe2
10.1002/advs.202504746 · 2025 · External reference
Stochastically broken inversion symmetry of van der Waals topological insulator for nanoscale physically Unclonable functions
10.1002/adma.202419927 · 2025 · External reference
SNNSim: investigation and optimization of large‐scale analog spiking neural networks based on flash memory devices
10.1002/aisy.202300456 · 2024 · External reference
Poker‐DVS and MNIST‐DVS. Their history, how they were made, and other details
10.3389/fnins.2015.00481 · 2015 · External reference
Spiking neural networks for event‐based action recognition: a new task to understand their advantage
10.1016/j.neucom.2024.128657 · 2025 · External reference
Memristor‐based analog computation and neural network classification with a dot product engine
10.1002/adma.201705914 · ExternalCitation · doi-reference
Memristors based on 2D materials as an artificial synapse for neuromorphic electronics
10.1002/adma.202002092 · ExternalCitation · doi-reference
High‐performance memristors based on ultrathin 2D copper chalcogenides
10.1002/adma.202108313 · ExternalCitation · doi-reference
In‐memory computing using memristor arrays with ultrathin 2D PdSeOx/PdSe2 heterostructure
10.1002/adma.202201488 · ExternalCitation · doi-reference
Compute in‐memory with non‐volatile elements for neural networks: a review from a co‐design perspective
10.1002/adma.202204944 · ExternalCitation · doi-reference
A highly crystalline single layer 2D polymer for low variability and excellent scalability molecular memristors
10.1002/adma.202208377 · ExternalCitation · doi-reference
Electron release via internal polarization fields for optimal S‐H bonding states
10.1002/adma.202411211 · ExternalCitation · doi-reference
Stochastically broken inversion symmetry of van der Waals topological insulator for nanoscale physically Unclonable functions
10.1002/adma.202419927 · ExternalCitation · doi-reference
Artificial room‐temperature ferromagnetism of bulk van der Waals VSe2
10.1002/advs.202504746 · ExternalCitation · doi-reference
Monolithically‐integrated van der Waals synaptic memory via bulk Nano‐crystallization
10.1002/advs.202510961 · ExternalCitation · doi-reference
Beyond von Neumann architecture: brain‐inspired artificial neuromorphic devices and integrated computing
10.1002/aelm.202300839 · ExternalCitation · doi-reference
SNNSim: investigation and optimization of large‐scale analog spiking neural networks based on flash memory devices
10.1002/aisy.202300456 · ExternalCitation · doi-reference
Wafer‐scale and low‐temperature growth of 1T‐WS2 film for efficient and stable hydrogen evolution reaction
10.1002/smll.201905000 · ExternalCitation · doi-reference
Recent advances in in‐memory computing: exploring memristor and memtransistor arrays with 2D materials
10.1007/s40820-024-01335-2 · ExternalCitation · doi-reference
Spiking neural networks for event‐based action recognition: a new task to understand their advantage
10.1016/j.neucom.2024.128657 · ExternalCitation · doi-reference
Low‐temperature and large‐scale production of a transition metal sulfide vertical heterostructure and its application for photodetectors
10.1021/acsami.0c19666 · ExternalCitation · doi-reference
Patchwork‐structured heterointerface of 1T‐WS2/a‐WO3 with sustained hydrogen spillover as a highly efficient hydrogen evolution reaction electrocatalyst
10.1021/acsami.2c03584 · ExternalCitation · doi-reference
Low‐temperature synthesis of wafer‐scale MoS2‐WS2 vertical heterostructures by single‐step penetrative plasma sulfurization
10.1021/acsnano.0c06989 · ExternalCitation · doi-reference
90% yield production of polymer nano‐memristor for in‐memory computing
10.1038/s41467-021-22243-8 · ExternalCitation · doi-reference
Wafer‐scale solution‐processed 2D material analog resistive memory array for memory‐based computing
10.1038/s41467-022-30519-w · ExternalCitation · doi-reference
Monolithic 3D integration of 2D transistors and vertical RRAMs in 1T‐4R structure for high‐density memory
10.1038/s41467-023-41736-2 · ExternalCitation · doi-reference
Free‐standing two‐dimensional ferro‐ionic memristor
10.1038/s41467-024-48810-3 · ExternalCitation · doi-reference
Heterogeneous integration of 2D memristor arrays and silicon selectors for compute‐in‐memory hardware in convolutional neural networks
10.1038/s41467-025-58039-3 · ExternalCitation · doi-reference
Monolithic 3D integration of 2D materials‐based electronics towards ultimate edge computing solutions
10.1038/s41563-023-01704-z · ExternalCitation · doi-reference
Monolithic cell‐on‐memristor architecture enables wafer‐scale integration of oscillatory chemoreceptors for bio‐realistic gustatory chips
10.1038/s41563-025-02436-y · ExternalCitation · doi-reference
Memory devices and applications for in‐memory computing
10.1038/s41565-020-0655-z · ExternalCitation · doi-reference
On‐chip direct synthesis of boron nitride memristors
10.1038/s41565-025-01988-z · ExternalCitation · doi-reference
Twelve‐inch electrically anisotropic boridene for optoelectronic computing
10.1038/s41565-026-02122-3 · ExternalCitation · doi-reference
Promises and prospects of two‐dimensional transistors
10.1038/s41586-021-03339-z · ExternalCitation · doi-reference
A compute‐in‐memory chip based on resistive random‐access memory
10.1038/s41586-022-04992-8 · ExternalCitation · doi-reference
Dendrocentric learning for synthetic intelligence
10.1038/s41586-022-05340-6 · ExternalCitation · doi-reference
Thousands of conductance levels in memristors integrated on CMOS
10.1038/s41586-023-05759-5 · ExternalCitation · doi-reference
Neuromorphic computing at scale
10.1038/s41586-024-08253-8 · ExternalCitation · doi-reference
The growing memristor industry
10.1038/s41586-025-08733-5 · ExternalCitation · doi-reference
Synaptic and neural behaviours in a standard silicon transistor
10.1038/s41586-025-08742-4 · ExternalCitation · doi-reference
A RISC‐V 32‐bit microprocessor based on two‐dimensional semiconductors
10.1038/s41586-025-08759-9 · ExternalCitation · doi-reference
Hybrid architecture based on two‐dimensional memristor crossbar array and CMOS integrated circuit for edge computing
10.1038/s41699-021-00284-3 · ExternalCitation · doi-reference
Advancements in 2D layered material memristors: unleashing their potential beyond memory
10.1038/s41699-024-00522-4 · ExternalCitation · doi-reference
Robust memristors based on layered two‐dimensional materials
10.1038/s41928-018-0021-4 · ExternalCitation · doi-reference
An electronic silicon‐based memristor with a high switching uniformity
10.1038/s41928-019-0204-7 · ExternalCitation · doi-reference
Anomalous resistive switching in memristors based on two‐dimensional palladium diselenide using heterophase grain boundaries
10.1038/s41928-021-00573-1 · ExternalCitation · doi-reference
Strain engineering of vertical molybdenum ditelluride phase‐change memristors
10.1038/s41928-023-01071-2 · ExternalCitation · doi-reference
Advanced packaging of chiplets for future computing needs
10.1038/s41928-024-01175-3 · ExternalCitation · doi-reference
Building 3D integrated circuits with electronics and photonics
10.1038/s41928-024-01187-z · ExternalCitation · doi-reference
A reconfigurable heterostructure transistor array for monocular 3D parallax reconstruction
10.1038/s41928-024-01261-6 · ExternalCitation · doi-reference
Memristors with analogue switching and high on/off ratios using a van der Waals metallic cathode
10.1038/s41928-024-01269-y · ExternalCitation · doi-reference
Energy‐efficient computing at cryogenic temperatures
10.1038/s41928-024-01278-x · ExternalCitation · doi-reference
Disrupting the DRAM roadmap with capacitor‐less IGZO‐DRAM technology
10.1038/s44287-025-00162-w · ExternalCitation · doi-reference
Thermal management materials for 3D‐stacked integrated circuits
10.1038/s44287-025-00196-0 · ExternalCitation · doi-reference
Current status and prospects of memristors based on novel 2D materials
10.1039/c9mh02033k · ExternalCitation · doi-reference
AI and memory wall
10.1109/mm.2024.3373763 · ExternalCitation · doi-reference
Energy‐efficient monolithic 3‐D SRAM cell with BEOL MoS2 FETs for SoC scaling
10.1109/ted.2020.3018099 · ExternalCitation · doi-reference
Addressing the connectivity bottleneck with BEOL FeFETs for 3‐D CMOS+ X Ising machines
10.1109/ted.2025.3562510 · ExternalCitation · doi-reference
Addressing interconnect challenges for enhanced computing performance
10.1126/science.adk6189 · ExternalCitation · doi-reference
3D‐stacked memory architectures for multi‐core processors
10.1145/1394608.1382159 · ExternalCitation · doi-reference
Poker‐DVS and MNIST‐DVS. Their history, how they were made, and other details
10.3389/fnins.2015.00481 · ExternalCitation · doi-reference
