Research graph
References from Electrical Signatures of Interfacial Charge Transfer Enabling Second‐Harmonic Generation in Centrosymmetric Bilayer MoTe <sub>2</sub>. Local targets link to admitted publications; unresolved targets remain external evidence.
10.1038/s41467‐025‐58449‐3
10.1038/s41467‐025‐58449‐3 · External reference
10.1126/sciadv.adu7605
10.1126/sciadv.adu7605 · External reference
10.1038/s41377‐024‐01732‐7
10.1038/s41377‐024‐01732‐7 · External reference
10.1002/lpor.202100726
10.1002/lpor.202100726 · External reference
10.1038/s41586‐022‐05393‐7
10.1038/s41586‐022‐05393‐7 · External reference
10.1002/adom.201701334
10.1002/adom.201701334 · External reference
10.1103/physrevb.87.201401
10.1103/physrevb.87.201401 · External reference
10.1021/nl401561r
10.1021/nl401561r · External reference
10.1038/s41598‐018‐35510‐4
10.1038/s41598‐018‐35510‐4 · External reference
10.1063/1.5051965
10.1063/1.5051965 · External reference
10.1021/acs.nanolett.6b04344
10.1021/acs.nanolett.6b04344 · External reference
10.1038/s41467‐023‐41295‐6
10.1038/s41467‐023‐41295‐6 · External reference
10.1002/adma.202410469
10.1002/adma.202410469 · External reference
10.1126/sciadv.adf4571
10.1126/sciadv.adf4571 · External reference
10.1103/physrevb.109.075417
10.1103/physrevb.109.075417 · External reference
10.1021/acs.nanolett.5b02547
10.1021/acs.nanolett.5b02547 · External reference
10.1002/adom.202202495
10.1002/adom.202202495 · External reference
10.1002/adom.202403535
10.1002/adom.202403535 · External reference
10.1063/1.5131165
10.1063/1.5131165 · External reference
10.1021/nn505809d
10.1021/nn505809d · External reference
10.1016/j.apmt.2024.102384
10.1016/j.apmt.2024.102384 · External reference
Strained Silicon Technology: Non‐destructive High‐lateral‐resolution Characterization Through Tip‐enhanced Raman Spectroscopy
10.1177/00037028241246292 · 2024 · External reference
10.1002/adfm.202202658
10.1002/adfm.202202658 · External reference
10.1039/d5nr03136b
10.1039/d5nr03136b · External reference
10.26599/nr.2025.94908005
10.26599/nr.2025.94908005 · External reference
10.1021/nl401831u
10.1021/nl401831u · External reference
10.1038/s41586‐024‐07438‐5
10.1038/s41586‐024‐07438‐5 · External reference
10.1038/s41699‐018‐0066‐2
10.1038/s41699‐018‐0066‐2 · External reference
10.1038/s41928‐022‐00768‐0
10.1038/s41928‐022‐00768‐0 · External reference
10.1103/physrevb.110.035429
10.1103/physrevb.110.035429 · External reference
10.1063/1.4816517
10.1063/1.4816517 · External reference
10.1038/s43246‐025‐01070‐0
10.1038/s43246‐025‐01070‐0 · External reference
Engineering MoSe2/MoS2 Heterojunction Traps in 2D Transistors for Multilevel Memory, Multiscale Display, and Synaptic Functions
10.1038/s41699-022-00295-8 · 2022 · External reference
10.1038/s41467‐021‐23711‐x
10.1038/s41467‐021‐23711‐x · External reference
10.1039/d1tc01973b
10.1039/d1tc01973b · External reference
10.1038/s41699‐017‐0038‐y
10.1038/s41699‐017‐0038‐y · External reference
10.1021/acsami.0c09635
10.1021/acsami.0c09635 · External reference
10.1063/1.4774090
10.1063/1.4774090 · External reference
10.1103/physrevx.4.011043
10.1103/physrevx.4.011043 · External reference
10.1021/nl4010783
10.1021/nl4010783 · External reference
10.1002/adfm.202202658
10.1002/adfm.202202658 · ExternalCitation · doi-reference
10.1002/adma.202410469
10.1002/adma.202410469 · ExternalCitation · doi-reference
10.1002/adom.201701334
10.1002/adom.201701334 · ExternalCitation · doi-reference
10.1002/adom.202202495
10.1002/adom.202202495 · ExternalCitation · doi-reference
10.1002/adom.202403535
10.1002/adom.202403535 · ExternalCitation · doi-reference
10.1002/lpor.202100726
10.1002/lpor.202100726 · ExternalCitation · doi-reference
10.1016/j.apmt.2024.102384
10.1016/j.apmt.2024.102384 · ExternalCitation · doi-reference
10.1021/acs.nanolett.5b02547
10.1021/acs.nanolett.5b02547 · ExternalCitation · doi-reference
10.1021/acs.nanolett.6b04344
10.1021/acs.nanolett.6b04344 · ExternalCitation · doi-reference
10.1021/acsami.0c09635
10.1021/acsami.0c09635 · ExternalCitation · doi-reference
10.1021/nl4010783
10.1021/nl4010783 · ExternalCitation · doi-reference
10.1021/nl401561r
10.1021/nl401561r · ExternalCitation · doi-reference
10.1021/nl401831u
10.1021/nl401831u · ExternalCitation · doi-reference
10.1021/nn505809d
10.1021/nn505809d · ExternalCitation · doi-reference
10.1038/s41377‐024‐01732‐7
10.1038/s41377‐024‐01732‐7 · ExternalCitation · doi-reference
10.1038/s41467‐021‐23711‐x
10.1038/s41467‐021‐23711‐x · ExternalCitation · doi-reference
10.1038/s41467‐023‐41295‐6
10.1038/s41467‐023‐41295‐6 · ExternalCitation · doi-reference
10.1038/s41467‐025‐58449‐3
10.1038/s41467‐025‐58449‐3 · ExternalCitation · doi-reference
10.1038/s41586‐022‐05393‐7
10.1038/s41586‐022‐05393‐7 · ExternalCitation · doi-reference
10.1038/s41586‐024‐07438‐5
10.1038/s41586‐024‐07438‐5 · ExternalCitation · doi-reference
10.1038/s41598‐018‐35510‐4
10.1038/s41598‐018‐35510‐4 · ExternalCitation · doi-reference
Engineering MoSe2/MoS2 Heterojunction Traps in 2D Transistors for Multilevel Memory, Multiscale Display, and Synaptic Functions
10.1038/s41699-022-00295-8 · ExternalCitation · doi-reference
10.1038/s41699‐017‐0038‐y
10.1038/s41699‐017‐0038‐y · ExternalCitation · doi-reference
10.1038/s41699‐018‐0066‐2
10.1038/s41699‐018‐0066‐2 · ExternalCitation · doi-reference
10.1038/s41928‐022‐00768‐0
10.1038/s41928‐022‐00768‐0 · ExternalCitation · doi-reference
10.1038/s43246‐025‐01070‐0
10.1038/s43246‐025‐01070‐0 · ExternalCitation · doi-reference
10.1039/d1tc01973b
10.1039/d1tc01973b · ExternalCitation · doi-reference
10.1039/d5nr03136b
10.1039/d5nr03136b · ExternalCitation · doi-reference
10.1063/1.4774090
10.1063/1.4774090 · ExternalCitation · doi-reference
10.1063/1.4816517
10.1063/1.4816517 · ExternalCitation · doi-reference
10.1063/1.5051965
10.1063/1.5051965 · ExternalCitation · doi-reference
10.1063/1.5131165
10.1063/1.5131165 · ExternalCitation · doi-reference
10.1103/physrevb.109.075417
10.1103/physrevb.109.075417 · ExternalCitation · doi-reference
10.1103/physrevb.110.035429
10.1103/physrevb.110.035429 · ExternalCitation · doi-reference
10.1103/physrevb.87.201401
10.1103/physrevb.87.201401 · ExternalCitation · doi-reference
10.1103/physrevx.4.011043
10.1103/physrevx.4.011043 · ExternalCitation · doi-reference
10.1126/sciadv.adf4571
10.1126/sciadv.adf4571 · ExternalCitation · doi-reference
10.1126/sciadv.adu7605
10.1126/sciadv.adu7605 · ExternalCitation · doi-reference
Strained Silicon Technology: Non‐destructive High‐lateral‐resolution Characterization Through Tip‐enhanced Raman Spectroscopy
10.1177/00037028241246292 · ExternalCitation · doi-reference
10.26599/nr.2025.94908005
10.26599/nr.2025.94908005 · ExternalCitation · doi-reference