Research graph
References from In-situ Raman tomography of wide-bandgap homoepitaxial interfaces: A case study on 4H-SiC at elevated temperatures. Local targets link to admitted publications; unresolved targets remain external evidence.
Radiation-tolerant electronic devices using wide bandgap semiconductors
10.1002/admt.202200539 · 2022 · External reference
P-CuGaO2/-Ga2O3 interfaces: A high-throughput approach for interface prediction and generation for power device applications
2025 · External reference
Review on interface engineering of low leakage current and on-resistance for high-efficiency Ga2O3-based power devices
2022 · External reference
Ga2O3-based X-ray detector and scintillators: A review
2023 · External reference
Operation of a 250 μm-thick SiC detector with DT neutrons at high temperatures
10.1016/j.fusengdes.2024.114486 · 2024 · External reference
Degradation mechanism of Schottky P-GaN gate stack in GaN power devices under neutron irradiation
10.1063/5.0065046 · 2021 · External reference
Low-fluence neutron irradiation effects on AlGaN/GaN HEMTs
10.1002/admt.202200872 · 2023 · External reference
Comparison of 10 MeV neutron irradiation effects on NiO/Ga2O3 heterojunction rectifiers and Ni/Au/Ga2O3 schottky rectifiers
10.1149/2162-8777/ace54e · 2023 · External reference
Gallium oxide (Ga2O3) as a radiation detector distinguishing neutrons and gammas
10.1063/5.0262102 · 2025 · External reference
Perspective on comparative radiation hardness of Ga2O3 polymorphs
10.1116/6.0004444 · 2025 · External reference
Diamond detector as a fast neutron spectrometer
10.1016/0168-9002(94)91393-5 · 1994 · External reference
Fusion product diagnostics based on commercially available chemical vapor deposition diamond detector in large helical device
10.1088/1748-0221/18/01/p01022 · 2023 · External reference
PRISM: three-dimensional sub-diffractive phase-resolved imaging spectroscopic method
10.1038/s41598-024-72308-z · 2024 · External reference
Spectroscopic properties of close-to-perfect-monolayer quasi-free-standing epitaxial graphene on 6H SiC(0001)
10.1016/j.apsusc.2023.158617 · 2024 · External reference
Determining the number of graphene layers based on Raman response of the SiC substrate
10.1016/j.physe.2021.114853 · 2021 · External reference
Layer-resolved Raman imaging and analysis of parasitic ad-layers in transferred graphene
2023 · External reference
Controlling the number of layers of Mo-grown CVD graphene through the catalyst thickness
10.1016/j.diamond.2025.112195 · 2025 · External reference
Homoepitaksja węglika krzemu dla przyrządów mocy w sieci badawczej Łukasiewicz - ITME
10.15199/48.2019.09.32 · 2019 · External reference
Unresolved reference
2021 · External reference
Depth profiling of ion-implanted 4H–SiC using confocal Raman spectroscopy
10.3390/cryst10020131 · 2020 · External reference
Analysis of depth profiling data obtained by confocal Raman microspectroscopy
10.1366/00037020360695982 · 2003 · External reference
Raman characterization of local electrical properties and growth process in modulation-doped 6H-SiC crystals
10.1063/1.1655682 · 2004 · External reference
Raman investigation of SiC polytypes
10.1002/1521-396x(199707)162:1<39::aid-pssa39>3.0.co;2-l · 1997 · External reference
Determination of free carrier density in the low doping regime of 4H-SiC by Raman scattering
10.1063/1.2992063 · 2008 · External reference
Raman scattering study of carrier-transport and phonon properties of 4H-SiC crystals with graded doping
10.1103/physrevb.76.245208 · 2007 · External reference
Oxygen partial pressure dependence of the SiC oxidation process studied by in-situ spectroscopic ellipsometry
10.1063/1.4736801 · 2012 · External reference
Differences in SiC thermal oxidation process between crystalline surface orientations observed by in-situ spectroscopic ellipsometry
10.1063/1.4914050 · 2015 · External reference
Adaptive gold/vanadium dioxide periodic arrays for infrared optical modulation
10.1016/j.apsusc.2022.152592 · 2022 · External reference
Morphological and microstructural analysis of triangular defects in 4H-SiC homoepitaxial layers
10.1039/d1ce01606g · 2022 · External reference
Raman scattering microscopy imaging of basal plane stacking faults and associated partial dislocations in 4H-SiC crystals
10.1063/5.0007219 · 2020 · External reference
Understanding the microstructures of triangular defects in 4H - SiC homoepitaxial layers
10.1016/j.jcrysgro.2017.10.015 · 2017 · External reference
Formation mechanism of dislocation half-loop array in 4H-SiC epitaxial layers: effect of triangular defects
2025 · External reference
Surface flattening of 4H-SiC (0001) epitaxial wafers by high temperature oxidation
10.1088/1361-6641/ac8c65 · 2022 · External reference
Nondestructive analysis of interface damage and stress in Al-ion implanted 4H-SiC homoepitaxial wafers via micro-Raman and multiscale simulation
10.1016/j.apsusc.2025.164204 · 2025 · External reference
Prediction of temperature-dependent stress in 4H-SiC using in situ nondestructive Raman spectroscopy characterization
10.1002/lpor.202401033 · 2025 · External reference
Study on the surface structure of N-doped 4H-SiC homoepitaxial layer dependence on the growth temperature and c/si ratio deposited by CVD
2023 · External reference
Stress characterization of the interface between thermal oxide and the 4H-SiC epitaxial layer using near-field optical Raman microscopy
10.1177/0003702819856639 · 2019 · External reference
Thermal expansion of the hexagonal (4H) polytype of SiC
10.1063/1.337456 · 1986 · External reference
Temperature dependence of refractive indices for 4H- and 6H-SiC
10.1063/1.4868576 · 2014 · External reference
Thermo-optic coefficients of 4H-SiC, GaN, and AlN for ultraviolet to infrared regions up to 500 °C
2012 · External reference
Raman investigation of SiC polytypes
10.1002/1521-396x(199707)162:1<39::aid-pssa39>3.0.co;2-l · ExternalCitation · doi-reference
Radiation-tolerant electronic devices using wide bandgap semiconductors
10.1002/admt.202200539 · ExternalCitation · doi-reference
Low-fluence neutron irradiation effects on AlGaN/GaN HEMTs
10.1002/admt.202200872 · ExternalCitation · doi-reference
Prediction of temperature-dependent stress in 4H-SiC using in situ nondestructive Raman spectroscopy characterization
10.1002/lpor.202401033 · ExternalCitation · doi-reference
Diamond detector as a fast neutron spectrometer
10.1016/0168-9002(94)91393-5 · ExternalCitation · doi-reference
Adaptive gold/vanadium dioxide periodic arrays for infrared optical modulation
10.1016/j.apsusc.2022.152592 · ExternalCitation · doi-reference
Spectroscopic properties of close-to-perfect-monolayer quasi-free-standing epitaxial graphene on 6H SiC(0001)
10.1016/j.apsusc.2023.158617 · ExternalCitation · doi-reference
Nondestructive analysis of interface damage and stress in Al-ion implanted 4H-SiC homoepitaxial wafers via micro-Raman and multiscale simulation
10.1016/j.apsusc.2025.164204 · ExternalCitation · doi-reference
Controlling the number of layers of Mo-grown CVD graphene through the catalyst thickness
10.1016/j.diamond.2025.112195 · ExternalCitation · doi-reference
Operation of a 250 μm-thick SiC detector with DT neutrons at high temperatures
10.1016/j.fusengdes.2024.114486 · ExternalCitation · doi-reference
Understanding the microstructures of triangular defects in 4H - SiC homoepitaxial layers
10.1016/j.jcrysgro.2017.10.015 · ExternalCitation · doi-reference
Determining the number of graphene layers based on Raman response of the SiC substrate
10.1016/j.physe.2021.114853 · ExternalCitation · doi-reference
PRISM: three-dimensional sub-diffractive phase-resolved imaging spectroscopic method
10.1038/s41598-024-72308-z · ExternalCitation · doi-reference
Morphological and microstructural analysis of triangular defects in 4H-SiC homoepitaxial layers
10.1039/d1ce01606g · ExternalCitation · doi-reference
Raman characterization of local electrical properties and growth process in modulation-doped 6H-SiC crystals
10.1063/1.1655682 · ExternalCitation · doi-reference
Determination of free carrier density in the low doping regime of 4H-SiC by Raman scattering
10.1063/1.2992063 · ExternalCitation · doi-reference
Thermal expansion of the hexagonal (4H) polytype of SiC
10.1063/1.337456 · ExternalCitation · doi-reference
Oxygen partial pressure dependence of the SiC oxidation process studied by in-situ spectroscopic ellipsometry
10.1063/1.4736801 · ExternalCitation · doi-reference
Temperature dependence of refractive indices for 4H- and 6H-SiC
10.1063/1.4868576 · ExternalCitation · doi-reference
Differences in SiC thermal oxidation process between crystalline surface orientations observed by in-situ spectroscopic ellipsometry
10.1063/1.4914050 · ExternalCitation · doi-reference
Raman scattering microscopy imaging of basal plane stacking faults and associated partial dislocations in 4H-SiC crystals
10.1063/5.0007219 · ExternalCitation · doi-reference
Degradation mechanism of Schottky P-GaN gate stack in GaN power devices under neutron irradiation
10.1063/5.0065046 · ExternalCitation · doi-reference
Gallium oxide (Ga2O3) as a radiation detector distinguishing neutrons and gammas
10.1063/5.0262102 · ExternalCitation · doi-reference
Surface flattening of 4H-SiC (0001) epitaxial wafers by high temperature oxidation
10.1088/1361-6641/ac8c65 · ExternalCitation · doi-reference
Fusion product diagnostics based on commercially available chemical vapor deposition diamond detector in large helical device
10.1088/1748-0221/18/01/p01022 · ExternalCitation · doi-reference
Raman scattering study of carrier-transport and phonon properties of 4H-SiC crystals with graded doping
10.1103/physrevb.76.245208 · ExternalCitation · doi-reference
Perspective on comparative radiation hardness of Ga2O3 polymorphs
10.1116/6.0004444 · ExternalCitation · doi-reference
Comparison of 10 MeV neutron irradiation effects on NiO/Ga2O3 heterojunction rectifiers and Ni/Au/Ga2O3 schottky rectifiers
10.1149/2162-8777/ace54e · ExternalCitation · doi-reference
Stress characterization of the interface between thermal oxide and the 4H-SiC epitaxial layer using near-field optical Raman microscopy
10.1177/0003702819856639 · ExternalCitation · doi-reference
Analysis of depth profiling data obtained by confocal Raman microspectroscopy
10.1366/00037020360695982 · ExternalCitation · doi-reference
Homoepitaksja węglika krzemu dla przyrządów mocy w sieci badawczej Łukasiewicz - ITME
10.15199/48.2019.09.32 · ExternalCitation · doi-reference
Depth profiling of ion-implanted 4H–SiC using confocal Raman spectroscopy
10.3390/cryst10020131 · ExternalCitation · doi-reference
