Research graph
References from Dual-phosphonic-acid-anchored self-assembled monolayers enhance bottom-electrode interfaces in perovskite memristors. Local targets link to admitted publications; unresolved targets remain external evidence.
Recent advances of volatile memristors: devices, mechanisms, and applications
10.1002/aisy.202000055 · 2020 · External reference
The future of memristors: materials engineering and neural networks
10.1002/adfm.202006773 · 2021 · External reference
Essential characteristics of memristors for neuromorphic computing
2023 · External reference
Humidity‐gated memristive dynamics enabling near‐sensor spiking computation for wind direction and noise‐resilient speech recognition
10.1002/adma.202518105 · 2026 · External reference
Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition
10.1063/1.2001146 · 2005 · External reference
Stabilized and RESET-voltage controlled multi-level switching characteristics in ZrO2-based memristors by inserting a-ZTO interface layer
10.1016/j.jallcom.2020.155256 · 2020 · External reference
Gallium oxide memristors: a review of resistive switching devices and emerging applications
10.3390/nano15171365 · 2025 · External reference
Electronic and photoelectronic memristors based on 2D materials
10.1002/aelm.202101099 · 2022 · External reference
Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide
10.1038/nature25747 · 2018 · External reference
Liquid‐exfoliated black phosphorous nanosheet thin films for flexible resistive random access memory applications
10.1002/adfm.201504187 · 2016 · External reference
Optogenetics inspired transition metal dichalcogenide neuristors for in-memory deep recurrent neural networks
10.1038/s41467-020-16985-0 · 2020 · External reference
Microstructure-modulated conductive filaments in Ruddlesden-Popper perovskite-based memristors and their application in artificial synapses
2025 · External reference
Surface engineering of FAPbI3 based organic–inorganic hybrid perovskite for memristors
10.1063/5.0214263 · 2024 · External reference
Blade coating large-area 3D/1D perovskite heterojunction films for effective synaptic memristors
10.1007/s12613-025-3327-z · 2026 · External reference
Air-processed FA–Cs perovskite scalable films without Pb0 defects for efficient inverted photovoltaic modules
10.1039/d5ta10312f · 2026 · External reference
Integration of perovskite/low‐dimensional material heterostructures for optoelectronics and artificial visual systems
10.1002/adfm.202500953 · 2025 · External reference
Unresolved reference
External reference
Design and synthesis of low temperature printed metal oxide memristors
10.1039/d0tc05368f · 2021 · External reference
Adaptive oxide electronics: a review
10.1063/1.3640806 · 2011 · External reference
Self-accelerated thermal dissolution model for reset programming in unipolar resistive-switching memory (RRAM) devices
10.1109/ted.2008.2010584 · 2009 · External reference
Temperature effects on the switching kinetics of a Cu–Ta2O5-based atomic switch
10.1088/0957-4484/22/25/254013 · 2011 · External reference
Temperature instability of resistive switching on HfOx-based RRAM devices
10.1109/led.2010.2041893 · 2010 · External reference
Air‐stable cesium lead iodide perovskite for ultra‐low operating voltage resistive switching
10.1007/978-981-13-0110-0 · 2018 · External reference
Lead-free all-inorganic cesium tin iodide perovskite for filamentary and interface-type resistive switching toward environment-friendly and temperature-tolerant nonvolatile memories
10.1021/acsami.8b15769 · 2019 · External reference
Ethanol-based green-solution processing of α-formamidinium lead triiodide perovskite layers
10.1038/s41560-022-01086-7 · 2022 · External reference
Advances in flexible memristors with hybrid perovskites
10.1021/acs.jpclett.1c02105 · 2021 · External reference
Fabrication of flexible resistive switching devices based on lead‐free all‐inorganic CsSnBr3 perovskite using a one‐step chemical vapor deposition method
10.1002/aelm.202000799 · 2020 · External reference
Lead-free, air-stable hybrid organic–inorganic perovskite resistive switching memory with ultrafast switching and multilevel data storage
10.1039/c8nr00863a · 2018 · External reference
Three-dimensional perovskite nanowire array–based ultrafast resistive RAM with ultralong data retention
10.1126/sciadv.abg3788 · 2021 · External reference
Charge transport in mixed metal halide perovskite semiconductors
10.1038/s41563-022-01448-2 · 2023 · External reference
Enhanced performance and stability of CsPbBr3 perovskite solar cells using trioctylphosphine oxide additive
10.1021/acsami.4c15862 · 2024 · External reference
Charge trapping and detrapping in CsPbBr3 perovskite nanocrystals: implications for photovoltaic and photocatalysis applications
10.1021/acsanm.4c04839 · 2024 · External reference
Bandgap tuning strategy by cations and halide ions of lead halide perovskites learned from machine learning
10.1039/d1ra03117a · 2021 · External reference
Effect of ammonium salt on conjugated polyelectrolyte as an interlayer for organic–inorganic hybrid perovskite memristors
10.3390/nano15030227 · 2025 · External reference
Sustainable mixed-halide perovskite resistive switching memories using self-assembled monolayers as the bottom contact
10.1021/acs.jpclett.4c01664 · 2024 · External reference
Decoupling volatile and nonvolatile response in reliable halide perovskite memristors
10.1002/sstr.202400380 · 2025 · External reference
Self-assembled monolayers for tin perovskite solar cells: challenges and opportunities
10.1039/d4mh01603c · 2025 · External reference
Organic hole‐transport layers for efficient, stable, and scalable inverted perovskite solar cells
10.1002/adma.202203794 · 2022 · External reference
Refining the substrate surface morphology for achieving efficient inverted perovskite solar cells
2023 · External reference
Interface passivation strategies for high-performance perovskite solar cells using two-dimensional perovskites
10.1039/d4qm00560k · 2024 · External reference
Concurrent cationic and anionic perovskite defect passivation enables 27.4% perovskite/silicon tandems with suppression of halide segregation
10.1016/j.joule.2021.05.013 · 2021 · External reference
Minimized surface deficiency on wide-bandgap perovskite for efficient indoor photovoltaics
10.1016/j.nanoen.2020.105377 · 2020 · External reference
40.1% record low‐light solar‐cell efficiency by holistic trap‐passivation using micrometer‐thick perovskite film
10.1002/adma.202100770 · 2021 · External reference
Reinforcing self-assembly of hole transport molecules for stable inverted perovskite solar cells
10.1126/science.adj9602 · 2024 · External reference
Self-assembled monolayers for perovskite solar cells: molecular design and chemical synthesis
10.1021/acsnano.5c05601 · 2025 · External reference
Tripodal triazatruxene derivative as a face-on oriented hole-collecting monolayer for efficient and stable inverted perovskite solar cells
10.1021/jacs.3c00805 · 2023 · External reference
Tetrapodal hole‐collecting monolayer materials based on saddle‐like cyclooctatetraene core for inverted perovskite solar cells
10.1002/anie.202412939 · 2024 · External reference
Environmental stability of high-mobility indium-oxide based transparent electrodes
10.1063/1.4935125 · 2015 · External reference
Low adhesion, non-wetting phosphonate self-assembled monolayer films formed on copper oxide surfaces
10.1016/j.ultramic.2009.03.033 · 2009 · External reference
Atto‐scale noise near‐infrared organic photodetectors enabled by controlling interfacial energetic offset through enhanced anchoring ability
10.1002/adma.202403647 · 2024 · External reference
Surface passivation of sequentially deposited perovskite solar cells by octylammonium spacer cations
10.1063/5.0144330 · 2023 · External reference
Combined bulk and surface passivation in dimensionally engineered 2D‐3D perovskite films via chlorine diffusion
10.1002/adfm.202104251 · 2021 · External reference
Halide perovskites for resistive random-access memories
10.1039/c8tc06031b · 2019 · External reference
In situ unveiling of the resistive switching mechanism of halide perovskite-based memristors
10.1021/acs.jpclett.3c03558 · 2024 · External reference
Dual‐phase stabilized perovskite nanowires for reduced defects and longer carrier lifetime
10.1002/adfm.202210155 · 2023 · External reference
Ethylene glycol-containing ammonium salt for developing highly compatible interfaces in perovskite solar cells
2023 · External reference
A monolithic 3D/2D perovskite memristor enabling ultralow-voltage neuromorphic computing and biomimetic sensing
10.1021/acs.jpclett.5c04053 · 2026 · External reference
Annealing effect on (FAPbI3) 1–x (MAPbBr 3) x perovskite films in inverted-type perovskite solar cells
10.3390/ma9090747 · 2016 · External reference
Perovskite phase formation in formamidinium–methylammonium lead iodide bromide (FAPbI3) 1-x (MAPbBr3) x materials and their morphological, optical and photovoltaic properties
10.1007/s00339-019-2866-4 · 2019 · External reference
Evaluating different alkylammonium bromide passivation films to stabilize and enhance PV performance of perovskite solar cells
10.1016/j.solener.2024.113195 · 2025 · External reference
Effective selection and targeted passivation for different defect types by ammonium salts in perovskite solar cells
10.1002/aenm.202500678 · 2025 · External reference
Enhancing efficiency and stability of perovskite solar cells via a self-assembled dopamine interfacial layer
10.1021/acsami.8b10332 · 2018 · External reference
Packing density of HS(CH2)nCOOH self-assembled monolayers
10.1039/c1an15664k · 2011 · External reference
Impact of interfacial roughness on light absorption of perovskite solar cells
10.1007/s13233-026-00528-5 · 2026 · External reference
Liquid‐exfoliated black phosphorous nanosheet thin films for flexible resistive random access memory applications
10.1002/adfm.201504187 · ExternalCitation · doi-reference
The future of memristors: materials engineering and neural networks
10.1002/adfm.202006773 · ExternalCitation · doi-reference
Combined bulk and surface passivation in dimensionally engineered 2D‐3D perovskite films via chlorine diffusion
10.1002/adfm.202104251 · ExternalCitation · doi-reference
Dual‐phase stabilized perovskite nanowires for reduced defects and longer carrier lifetime
10.1002/adfm.202210155 · ExternalCitation · doi-reference
Integration of perovskite/low‐dimensional material heterostructures for optoelectronics and artificial visual systems
10.1002/adfm.202500953 · ExternalCitation · doi-reference
40.1% record low‐light solar‐cell efficiency by holistic trap‐passivation using micrometer‐thick perovskite film
10.1002/adma.202100770 · ExternalCitation · doi-reference
Organic hole‐transport layers for efficient, stable, and scalable inverted perovskite solar cells
10.1002/adma.202203794 · ExternalCitation · doi-reference
Atto‐scale noise near‐infrared organic photodetectors enabled by controlling interfacial energetic offset through enhanced anchoring ability
10.1002/adma.202403647 · ExternalCitation · doi-reference
Humidity‐gated memristive dynamics enabling near‐sensor spiking computation for wind direction and noise‐resilient speech recognition
10.1002/adma.202518105 · ExternalCitation · doi-reference
Fabrication of flexible resistive switching devices based on lead‐free all‐inorganic CsSnBr3 perovskite using a one‐step chemical vapor deposition method
10.1002/aelm.202000799 · ExternalCitation · doi-reference
Electronic and photoelectronic memristors based on 2D materials
10.1002/aelm.202101099 · ExternalCitation · doi-reference
Effective selection and targeted passivation for different defect types by ammonium salts in perovskite solar cells
10.1002/aenm.202500678 · ExternalCitation · doi-reference
Recent advances of volatile memristors: devices, mechanisms, and applications
10.1002/aisy.202000055 · ExternalCitation · doi-reference
Tetrapodal hole‐collecting monolayer materials based on saddle‐like cyclooctatetraene core for inverted perovskite solar cells
10.1002/anie.202412939 · ExternalCitation · doi-reference
Decoupling volatile and nonvolatile response in reliable halide perovskite memristors
10.1002/sstr.202400380 · ExternalCitation · doi-reference
Air‐stable cesium lead iodide perovskite for ultra‐low operating voltage resistive switching
10.1007/978-981-13-0110-0 · ExternalCitation · doi-reference
Perovskite phase formation in formamidinium–methylammonium lead iodide bromide (FAPbI3) 1-x (MAPbBr3) x materials and their morphological, optical and photovoltaic properties
10.1007/s00339-019-2866-4 · ExternalCitation · doi-reference
Blade coating large-area 3D/1D perovskite heterojunction films for effective synaptic memristors
10.1007/s12613-025-3327-z · ExternalCitation · doi-reference
Impact of interfacial roughness on light absorption of perovskite solar cells
10.1007/s13233-026-00528-5 · ExternalCitation · doi-reference
Stabilized and RESET-voltage controlled multi-level switching characteristics in ZrO2-based memristors by inserting a-ZTO interface layer
10.1016/j.jallcom.2020.155256 · ExternalCitation · doi-reference
Concurrent cationic and anionic perovskite defect passivation enables 27.4% perovskite/silicon tandems with suppression of halide segregation
10.1016/j.joule.2021.05.013 · ExternalCitation · doi-reference
Minimized surface deficiency on wide-bandgap perovskite for efficient indoor photovoltaics
10.1016/j.nanoen.2020.105377 · ExternalCitation · doi-reference
Evaluating different alkylammonium bromide passivation films to stabilize and enhance PV performance of perovskite solar cells
10.1016/j.solener.2024.113195 · ExternalCitation · doi-reference
Low adhesion, non-wetting phosphonate self-assembled monolayer films formed on copper oxide surfaces
10.1016/j.ultramic.2009.03.033 · ExternalCitation · doi-reference
Advances in flexible memristors with hybrid perovskites
10.1021/acs.jpclett.1c02105 · ExternalCitation · doi-reference
In situ unveiling of the resistive switching mechanism of halide perovskite-based memristors
10.1021/acs.jpclett.3c03558 · ExternalCitation · doi-reference
Sustainable mixed-halide perovskite resistive switching memories using self-assembled monolayers as the bottom contact
10.1021/acs.jpclett.4c01664 · ExternalCitation · doi-reference
A monolithic 3D/2D perovskite memristor enabling ultralow-voltage neuromorphic computing and biomimetic sensing
10.1021/acs.jpclett.5c04053 · ExternalCitation · doi-reference
Enhanced performance and stability of CsPbBr3 perovskite solar cells using trioctylphosphine oxide additive
10.1021/acsami.4c15862 · ExternalCitation · doi-reference
Enhancing efficiency and stability of perovskite solar cells via a self-assembled dopamine interfacial layer
10.1021/acsami.8b10332 · ExternalCitation · doi-reference
Lead-free all-inorganic cesium tin iodide perovskite for filamentary and interface-type resistive switching toward environment-friendly and temperature-tolerant nonvolatile memories
10.1021/acsami.8b15769 · ExternalCitation · doi-reference
Charge trapping and detrapping in CsPbBr3 perovskite nanocrystals: implications for photovoltaic and photocatalysis applications
10.1021/acsanm.4c04839 · ExternalCitation · doi-reference
Self-assembled monolayers for perovskite solar cells: molecular design and chemical synthesis
10.1021/acsnano.5c05601 · ExternalCitation · doi-reference
Tripodal triazatruxene derivative as a face-on oriented hole-collecting monolayer for efficient and stable inverted perovskite solar cells
10.1021/jacs.3c00805 · ExternalCitation · doi-reference
Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide
10.1038/nature25747 · ExternalCitation · doi-reference
Optogenetics inspired transition metal dichalcogenide neuristors for in-memory deep recurrent neural networks
10.1038/s41467-020-16985-0 · ExternalCitation · doi-reference
Ethanol-based green-solution processing of α-formamidinium lead triiodide perovskite layers
10.1038/s41560-022-01086-7 · ExternalCitation · doi-reference
Charge transport in mixed metal halide perovskite semiconductors
10.1038/s41563-022-01448-2 · ExternalCitation · doi-reference
Packing density of HS(CH2)nCOOH self-assembled monolayers
10.1039/c1an15664k · ExternalCitation · doi-reference
Lead-free, air-stable hybrid organic–inorganic perovskite resistive switching memory with ultrafast switching and multilevel data storage
10.1039/c8nr00863a · ExternalCitation · doi-reference
Halide perovskites for resistive random-access memories
10.1039/c8tc06031b · ExternalCitation · doi-reference
Design and synthesis of low temperature printed metal oxide memristors
10.1039/d0tc05368f · ExternalCitation · doi-reference
Bandgap tuning strategy by cations and halide ions of lead halide perovskites learned from machine learning
10.1039/d1ra03117a · ExternalCitation · doi-reference
Self-assembled monolayers for tin perovskite solar cells: challenges and opportunities
10.1039/d4mh01603c · ExternalCitation · doi-reference
Interface passivation strategies for high-performance perovskite solar cells using two-dimensional perovskites
10.1039/d4qm00560k · ExternalCitation · doi-reference
Air-processed FA–Cs perovskite scalable films without Pb0 defects for efficient inverted photovoltaic modules
10.1039/d5ta10312f · ExternalCitation · doi-reference
Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition
10.1063/1.2001146 · ExternalCitation · doi-reference
Adaptive oxide electronics: a review
10.1063/1.3640806 · ExternalCitation · doi-reference
Environmental stability of high-mobility indium-oxide based transparent electrodes
10.1063/1.4935125 · ExternalCitation · doi-reference
Surface passivation of sequentially deposited perovskite solar cells by octylammonium spacer cations
10.1063/5.0144330 · ExternalCitation · doi-reference
Surface engineering of FAPbI3 based organic–inorganic hybrid perovskite for memristors
10.1063/5.0214263 · ExternalCitation · doi-reference
Temperature effects on the switching kinetics of a Cu–Ta2O5-based atomic switch
10.1088/0957-4484/22/25/254013 · ExternalCitation · doi-reference
Temperature instability of resistive switching on HfOx-based RRAM devices
10.1109/led.2010.2041893 · ExternalCitation · doi-reference
Self-accelerated thermal dissolution model for reset programming in unipolar resistive-switching memory (RRAM) devices
10.1109/ted.2008.2010584 · ExternalCitation · doi-reference
Three-dimensional perovskite nanowire array–based ultrafast resistive RAM with ultralong data retention
10.1126/sciadv.abg3788 · ExternalCitation · doi-reference
Reinforcing self-assembly of hole transport molecules for stable inverted perovskite solar cells
10.1126/science.adj9602 · ExternalCitation · doi-reference
Annealing effect on (FAPbI3) 1–x (MAPbBr 3) x perovskite films in inverted-type perovskite solar cells
10.3390/ma9090747 · ExternalCitation · doi-reference
Effect of ammonium salt on conjugated polyelectrolyte as an interlayer for organic–inorganic hybrid perovskite memristors
10.3390/nano15030227 · ExternalCitation · doi-reference
Gallium oxide memristors: a review of resistive switching devices and emerging applications
10.3390/nano15171365 · ExternalCitation · doi-reference
