Research graph
References from Plasma-field engineering for submicrometer boron-doped diamond with well-defined thickness, low roughness, and controlled boron incorporation. Local targets link to admitted publications; unresolved targets remain external evidence.
Diamond power devices: state of the art, modelling and figures of merit
2019 · External reference
Diamond: carbon at its best
10.1016/j.carbon.2021.06.063 · 2021 · External reference
Diamond electronics with high carrier mobilities
10.1038/s41928-021-00707-5 · 2022 · External reference
Superconductivity in diamond
10.1038/nature02449 · 2004 · External reference
High efficiency of boron doping and fast growth realized with a novel gas inlet structure in diamond microwave plasma chemical vapor deposition system
10.1007/s42823-023-00651-8 · 2024 · External reference
Chemical vapor deposition single-crystal diamond: a review
10.1002/pssr.202100354 · 2022 · External reference
High crystalline quality single crystal chemical vapour deposition diamond
10.1088/0953-8984/21/36/364205 · 2009 · External reference
Fabrication of thin single-crystal diamond membranes
10.1002/adma.200801460 · 2008 · External reference
Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics
10.1038/srep31585 · 2016 · External reference
Fabrication of thin, luminescent, single-crystal diamond membranes
10.1063/1.3628463 · 2011 · External reference
Influence of different surface morphologies on the performance of high-voltage, low-resistance diamond schottky diodes
10.1109/ted.2020.2989733 · 2020 · External reference
Leakage current analysis of diamond Schottky barrier diode
10.1063/1.2643374 · 2007 · External reference
Surface roughness at the Si(100)-SiO2 interface
10.1103/physrevb.32.8171 · 1985 · External reference
Effect of surface irregularities on diamond Schottky barrier diode with threading dislocations
10.1016/j.diamond.2022.109188 · 2022 · External reference
Fabrication of inversion channel diamond MOSFET with atomically step-free Al2O3/diamond interface
10.1016/j.carbon.2025.120024 · 2025 · External reference
Growth and surface structure of hydrogen terminal diamond thin films
10.7498/aps.73.20240053 · 2024 · External reference
A study on surface morphologies of (001) homoepitaxial diamond films
10.1016/s0925-9635(96)00698-x · 1997 · External reference
Surface roughening of diamond (001) films during homoepitaxial growth in heavy boron doping
10.1016/j.diamond.2006.12.024 · 2007 · External reference
Homoepitaxial boron doped single crystal diamond and its electrical properties
2022 · External reference
Impact of methane concentration on surface morphology and boron incorporation of heavily boron-doped single crystal diamond layers
10.1016/j.carbon.2020.10.061 · 2021 · External reference
Boron incorporation issues in diamond when TMB is used as precursor: toward extreme doping levels
10.1016/j.diamond.2011.12.019 · 2012 · External reference
The role of boron atoms in heavily boron-doped semiconducting homoepitaxial diamond growth - study of surface morphology
10.1016/j.diamond.2006.08.013 · 2007 · External reference
Growth mechanism of vapor-deposited diamond
10.1557/jmr.1988.0133 · 1988 · External reference
Thin film diamond growth mechanisms
1994 · External reference
Detailed surface and gas-phase chemical kinetics of diamond deposition
10.1103/physrevb.43.1520 · 1991 · External reference
Characterizations of etch pits formed on single crystal diamond surface using oxygen/hydrogen plasma surface treatment
10.1016/j.diamond.2015.08.012 · 2016 · External reference
Surface etching evolution of mechanically polished single crystal diamond with subsurface cleavage in microwave hydrogen plasma: topography, state and electrical properties
10.1016/j.vacuum.2022.110932 · 2022 · External reference
The influence of hydrogen plasma etching on the surface conductivity of the polycrystalline diamond surface and the temperature-dependent properties
10.1063/5.0153718 · 2023 · External reference
Quality assessment of in situ plasma-etched diamond surfaces for chemical vapor deposition overgrowth
2021 · External reference
Nanometric diamond delta doping with boron
10.1002/pssr.201600329 · 2017 · External reference
Controlled boron content in lightly B-doped single crystal diamond films by variation of methane concentration
10.1016/j.carbon.2024.118923 · 2024 · External reference
Surface morphology and microstructure evolution of single crystal diamond during different homoepitaxial growth stages
10.3390/ma14205964 · 2021 · External reference
Engineering quantum-coherent defects: the role of substrate miscut in chemical vapor deposition diamond growth
10.1063/5.0029715 · 2020 · External reference
High quality MPACVD diamond single crystal growth: high microwave power density regime
10.1088/0022-3727/40/20/s04 · 2007 · External reference
Effect of substrate stage height on single crystal diamond growth in MPCVD reactor: simulated and experimental perspective
10.1016/j.vacuum.2025.114723 · 2025 · External reference
Single crystal diamond deposited by dual radio-frequency plasma jet CVD with high growth rate
10.3390/cryst9010032 · 2019 · External reference
Evolution of high-quality homoepitaxial CVD diamond films induced by methane concentration
10.3390/coatings11080888 · 2021 · External reference
Microwave plasma modelling in clamshell chemical vapour deposition diamond reactors
10.1016/j.diamond.2022.108917 · 2022 · External reference
Effect of substrate holder design on stress and uniformity of large-area polycrystalline diamond films grown by microwave plasma-assisted CVD
10.3390/coatings10100939 · 2020 · External reference
New insights into the mechanism of CVD diamond growth: single crystal diamond in MW PECVD reactors
10.1016/j.diamond.2008.03.022 · 2008 · External reference
Effect of hydrogen flow rate on the plasma state and quality of diamond crystals grown by MPCVD
10.1016/j.mssp.2024.108884 · 2025 · External reference
Evolution of surface morphology and properties of diamond films by hydrogen plasma etching
2023 · External reference
Residual stresses and crystalline quality of heavily boron-doped diamond films analysed by micro-Raman spectroscopy and X-ray diffraction
10.1016/s0008-6223(03)00071-x · 2003 · External reference
Formation of boron-carbon nanosheets and bilayers in boron-doped diamond: origin of metallicity and superconductivity
10.1186/s11671-015-1215-6 · 2016 · External reference
Analysis of the Fano in diamond
10.1016/s0925-9635(00)00378-2 · 2001 · External reference
A method of measuring specific resistivity and hall effect of discs of arbitrary shape
1991 · External reference
Finite element and analytical solutions for van der Pauw and four-point probe correction factors when multiple non-ideal measurement conditions coexist
10.1063/1.5001830 · 2017 · External reference
Front and back side SIMS analysis of boron-doped delta-layer in diamond
10.1016/j.apsusc.2017.03.118 · 2017 · External reference
Gas phase chemistry of trimethylboron in thermal chemical vapor deposition
10.1021/acs.jpcc.7b09538 · 2017 · External reference
Trimethylboron as single-source precursor for boron-carbon thin film synthesis by plasma chemical vapor deposition
10.1021/acs.jpcc.6b06529 · 2016 · External reference
Effect of CH/C2 species density on surface morphology of diamond film grown by microwave plasma jet chemical vapor deposition
10.2320/matertrans.mra2007324 · 2008 · External reference
Fabrication of thin single-crystal diamond membranes
10.1002/adma.200801460 · ExternalCitation · doi-reference
Nanometric diamond delta doping with boron
10.1002/pssr.201600329 · ExternalCitation · doi-reference
Chemical vapor deposition single-crystal diamond: a review
10.1002/pssr.202100354 · ExternalCitation · doi-reference
High efficiency of boron doping and fast growth realized with a novel gas inlet structure in diamond microwave plasma chemical vapor deposition system
10.1007/s42823-023-00651-8 · ExternalCitation · doi-reference
Front and back side SIMS analysis of boron-doped delta-layer in diamond
10.1016/j.apsusc.2017.03.118 · ExternalCitation · doi-reference
Impact of methane concentration on surface morphology and boron incorporation of heavily boron-doped single crystal diamond layers
10.1016/j.carbon.2020.10.061 · ExternalCitation · doi-reference
Diamond: carbon at its best
10.1016/j.carbon.2021.06.063 · ExternalCitation · doi-reference
Controlled boron content in lightly B-doped single crystal diamond films by variation of methane concentration
10.1016/j.carbon.2024.118923 · ExternalCitation · doi-reference
Fabrication of inversion channel diamond MOSFET with atomically step-free Al2O3/diamond interface
10.1016/j.carbon.2025.120024 · ExternalCitation · doi-reference
The role of boron atoms in heavily boron-doped semiconducting homoepitaxial diamond growth - study of surface morphology
10.1016/j.diamond.2006.08.013 · ExternalCitation · doi-reference
Surface roughening of diamond (001) films during homoepitaxial growth in heavy boron doping
10.1016/j.diamond.2006.12.024 · ExternalCitation · doi-reference
New insights into the mechanism of CVD diamond growth: single crystal diamond in MW PECVD reactors
10.1016/j.diamond.2008.03.022 · ExternalCitation · doi-reference
Boron incorporation issues in diamond when TMB is used as precursor: toward extreme doping levels
10.1016/j.diamond.2011.12.019 · ExternalCitation · doi-reference
Characterizations of etch pits formed on single crystal diamond surface using oxygen/hydrogen plasma surface treatment
10.1016/j.diamond.2015.08.012 · ExternalCitation · doi-reference
Microwave plasma modelling in clamshell chemical vapour deposition diamond reactors
10.1016/j.diamond.2022.108917 · ExternalCitation · doi-reference
Effect of surface irregularities on diamond Schottky barrier diode with threading dislocations
10.1016/j.diamond.2022.109188 · ExternalCitation · doi-reference
Effect of hydrogen flow rate on the plasma state and quality of diamond crystals grown by MPCVD
10.1016/j.mssp.2024.108884 · ExternalCitation · doi-reference
Surface etching evolution of mechanically polished single crystal diamond with subsurface cleavage in microwave hydrogen plasma: topography, state and electrical properties
10.1016/j.vacuum.2022.110932 · ExternalCitation · doi-reference
Effect of substrate stage height on single crystal diamond growth in MPCVD reactor: simulated and experimental perspective
10.1016/j.vacuum.2025.114723 · ExternalCitation · doi-reference
Residual stresses and crystalline quality of heavily boron-doped diamond films analysed by micro-Raman spectroscopy and X-ray diffraction
10.1016/s0008-6223(03)00071-x · ExternalCitation · doi-reference
Analysis of the Fano in diamond
10.1016/s0925-9635(00)00378-2 · ExternalCitation · doi-reference
A study on surface morphologies of (001) homoepitaxial diamond films
10.1016/s0925-9635(96)00698-x · ExternalCitation · doi-reference
Trimethylboron as single-source precursor for boron-carbon thin film synthesis by plasma chemical vapor deposition
10.1021/acs.jpcc.6b06529 · ExternalCitation · doi-reference
Gas phase chemistry of trimethylboron in thermal chemical vapor deposition
10.1021/acs.jpcc.7b09538 · ExternalCitation · doi-reference
Superconductivity in diamond
10.1038/nature02449 · ExternalCitation · doi-reference
Diamond electronics with high carrier mobilities
10.1038/s41928-021-00707-5 · ExternalCitation · doi-reference
Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics
10.1038/srep31585 · ExternalCitation · doi-reference
Leakage current analysis of diamond Schottky barrier diode
10.1063/1.2643374 · ExternalCitation · doi-reference
Fabrication of thin, luminescent, single-crystal diamond membranes
10.1063/1.3628463 · ExternalCitation · doi-reference
Finite element and analytical solutions for van der Pauw and four-point probe correction factors when multiple non-ideal measurement conditions coexist
10.1063/1.5001830 · ExternalCitation · doi-reference
Engineering quantum-coherent defects: the role of substrate miscut in chemical vapor deposition diamond growth
10.1063/5.0029715 · ExternalCitation · doi-reference
The influence of hydrogen plasma etching on the surface conductivity of the polycrystalline diamond surface and the temperature-dependent properties
10.1063/5.0153718 · ExternalCitation · doi-reference
High quality MPACVD diamond single crystal growth: high microwave power density regime
10.1088/0022-3727/40/20/s04 · ExternalCitation · doi-reference
High crystalline quality single crystal chemical vapour deposition diamond
10.1088/0953-8984/21/36/364205 · ExternalCitation · doi-reference
Surface roughness at the Si(100)-SiO2 interface
10.1103/physrevb.32.8171 · ExternalCitation · doi-reference
Detailed surface and gas-phase chemical kinetics of diamond deposition
10.1103/physrevb.43.1520 · ExternalCitation · doi-reference
Influence of different surface morphologies on the performance of high-voltage, low-resistance diamond schottky diodes
10.1109/ted.2020.2989733 · ExternalCitation · doi-reference
Formation of boron-carbon nanosheets and bilayers in boron-doped diamond: origin of metallicity and superconductivity
10.1186/s11671-015-1215-6 · ExternalCitation · doi-reference
Growth mechanism of vapor-deposited diamond
10.1557/jmr.1988.0133 · ExternalCitation · doi-reference
Effect of CH/C2 species density on surface morphology of diamond film grown by microwave plasma jet chemical vapor deposition
10.2320/matertrans.mra2007324 · ExternalCitation · doi-reference
Effect of substrate holder design on stress and uniformity of large-area polycrystalline diamond films grown by microwave plasma-assisted CVD
10.3390/coatings10100939 · ExternalCitation · doi-reference
Evolution of high-quality homoepitaxial CVD diamond films induced by methane concentration
10.3390/coatings11080888 · ExternalCitation · doi-reference
Single crystal diamond deposited by dual radio-frequency plasma jet CVD with high growth rate
10.3390/cryst9010032 · ExternalCitation · doi-reference
Surface morphology and microstructure evolution of single crystal diamond during different homoepitaxial growth stages
10.3390/ma14205964 · ExternalCitation · doi-reference
Growth and surface structure of hydrogen terminal diamond thin films
10.7498/aps.73.20240053 · ExternalCitation · doi-reference
