Research graph
References from Analytical study of Dual Material Surrounding Gate MOSFET to suppress short-channel effects (SCEs). Local targets link to admitted publications; unresolved targets remain external evidence.
Unresolved reference
2009 · External reference
A novel hetero-material gate (HMG) MOSFET for deep-submicron ULSI technology
10.1109/16.735743 · 1998 · External reference
Dual material gate (DMG) field effect transistor
10.1109/16.760391 · 1999 · External reference
Effect of gate engineering in double-gate MOSFETs for analog/RF applications
10.1016/j.mejo.2012.06.002 · 2012 · External reference
A new symmetrical double gate nanoscale MOSFET with asymmetrical side gates for electrically induced source/drain
10.1016/j.mee.2005.11.002 · 2006 · External reference
Sub-threshold behavior of triple-gate MOSFETs on SOI material sub-threshold behavior of triple-gate MOSFETs on SOI material
10.1016/j.sse.2003.09.027 · 2004 · External reference
FinFET-a self-aligned double-gate MOSFET scalable to 20 nm
2000 · External reference
A unified short-channel compact model for cylindrical surrounding-gate MOSFET
10.1016/j.sse.2010.11.008 · 2011 · External reference
Ultimate thin double-gate SOI MOSFETs
10.1109/ted.2003.811371 · 2003 · External reference
High-performance top and bottom double-gate low temperature poly-silicon thin film transistors fabricated by excimer laser crystallization
10.1016/j.sse.2007.10.029 · 2008 · External reference
A new dual-material double-gate (DMDG) nanoscale SOI MOSFET—Two-dimensional analytical modeling and simulation
10.1109/tnano.2004.837845 · 2005 · External reference
A two-dimensional analytical model for threshold voltage of short channel triple-material double-gate metal-oxide-semiconductor field effect trans
10.1063/1.3488605 · 2010 · External reference
Roadmap for 22 nm and beyond
10.1016/j.mee.2009.03.129 · 2009 · External reference
Design and performance analysis of cylindrical surrounding double-gate MOSFET for RF Switch
10.1016/j.mejo.2011.07.003 · 2011 · External reference
Analytical threshold voltage model for cylindrical surrounding-gate MOSFET with electrically induced source/drain extensions
10.1016/j.microrel.2011.04.017 · 2011 · External reference
A two-dimensional analytical solution for short-channel effects in nanowire MOSFETs
10.1109/ted.2009.2028048 · 2009 · External reference
Analytical model for threshold voltage and I-V characteristics of fully depleted short channel cylindrical/surrounding gate MOSFET
10.1016/s0167-9317(00)00419-6 · 2001 · External reference
Two-dimensional analytical modeling of fully depleted dual-material gate (DMG) SOI MOSFET and evidence for diminished short-channel effects
10.1109/ted.2004.823803 · 2004 · External reference
Analytical approach of a nanoscale triple-material surrounding gate (TMSG) MOSFETs for reduced short-channel effects
10.1016/j.mejo.2013.02.013 · 2013 · External reference
Analytical model for subthreshold swing and threshold voltage of surrounding gate metal oxide semiconductor field effect transistors
10.7567/jjap.50.074202 · 2011 · External reference
A new two- dimensional analytical threshold voltage model for short-channel triple material surrounding gate metal oxide semiconductor field effect transistors
10.7567/jjap.51.054301 · 2012 · External reference
1/f noise and analogue performance study of short-channel cylindrical surrounding gate MOSFET using a new subthreshold analytical pseudo-two-dimensional model
10.1049/iet-cds.2011.0093 · 2012 · External reference
A new analytical subthreshold model of SRG MOSFET with analogue performance investigation
10.1080/00207217.2011.623278 · 2012 · External reference
Precise analytical model for short channel cylindrical gate (CylG) gate-all-around (GAA) MOSFET
10.1016/j.sse.2012.08.006 · 2013 · External reference
New dual-material SG nanoscale MOSFET: analytical threshold voltage model
10.1109/ted.2006.870422 · 2006 · External reference
A new compact sub-threshold behavior model for dual-material surrounding gate (DMSG)MOSFET
10.1016/j.sse.2009.02.007 · 2009 · External reference
A new two-dimensional analytical threshold voltage model for short channel triple material surrounding-gate metal oxide semiconductor field effect transistors
2012 · External reference
An analytical subthreshold current modeling of cylindrical gate all around (CGAA) MOSFET incorporating the influence of device design engineering
10.1016/j.mejo.2014.01.015 · 2014 · External reference
MOSFET gate leakage modeling and selection guide for alternative gate dielectrics based on leakage considerations
10.1109/ted.2003.812504 · 2003 · External reference
TCAD assessment of device design technologies for enhanced performance of nanoscale DG MOSFET
10.1109/ted.2011.2160065 · 2011 · External reference
Effects of high-k (HfO2) gate dielectrics in double gate and cylindrical nanowire FETs scaled to the ultimate technology nodes
2007 · External reference
A new analytical threshold voltage model for symmetrical double-gate MOSFETs with high-k gate dielectrics
10.1016/j.sse.2007.01.026 · 2007 · External reference
A carrier-based DCIV model for long channel undoped cylindrical surrounding-gate MOSFETs
10.1016/j.sse.2006.01.015 · 2006 · External reference
An analytical compact circuit model for nanowire FET
10.1109/ted.2007.899397 · 2007 · External reference
Controlling short-channel effects in deep submicron SOI MOSFETs for improved reliability: a review
10.1109/tdmr.2004.824359 · 2004 · External reference
Short-channel effects in fully depleted SOI MOSFET's
10.1109/16.19942 · 1989 · External reference
Dual work function metal gate CMOS transistors by Ni-Ti interdiffusion
10.1109/55.992838 · 2002 · External reference
Modelling the centroid and the inversion charge in cylindrical surrounding gate MOSFETs including quantum effects
10.1109/ted.2007.911096 · 2008 · External reference
Analog and RF performance investigation of cylindrical surrounding-gate MOSFET with ananalytical pseudo-2Dmodel
10.1007/s10825-012-0396-9 · 2012 · External reference
Experimental gate misalignment analysis on double gate SOI MOSFETs
2004 · External reference
Analytical model of the threshold voltage and subthreshold swing of undoped cylindrical gate-all-around-based MOSFETs
10.1109/ted.2006.890595 · 2007 · External reference
Unresolved reference
2012 · External reference
Effect of localized interface charge on the threshold voltage of short-channel undoped symmetrical double-gate MOSFETs
10.1109/ted.2010.2093528 · 2011 · External reference
