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References from High figure-of-merit SOI power LDMOS for power integrated circuits. Local targets link to admitted publications; unresolved targets remain external evidence.
A new lateral power MOSFET for smart power ICs: the LUDMOS concept
10.1016/s0026-2692(98)00178-5 · 1999 · External reference
Unresolved reference
2010 · External reference
Unresolved reference
2008 · External reference
RF transistors: recent developments and roadmap toward terahertz applications
10.1016/j.sse.2007.05.020 · 2007 · External reference
Design and optimization of high voltage LDMOS transistors on 0.18 μm SOI CMOS technology
10.1016/j.sse.2011.03.014 · 2011 · External reference
LDMOSFET with a trench for SOI power integrated circuits
10.1016/j.mejo.2004.02.001 · 2014 · External reference
Reduced on resistance in LDMOS devices by integrating trench gates into planar technology
10.1109/led.2010.2043049 · 2010 · External reference
The thin SOI TGLDMOS transistor: a suitable power structure for low voltage applications
10.1088/0268-1242/22/10/018 · 2007 · External reference
A lateral trench dual gate power MOSFET on thin SOI for improved performance
10.1149/2.021307jss · 2013 · External reference
Low on-resistance SOI dual-trench-gate MOSFET
10.1109/ted.2011.2174642 · 2012 · External reference
A high-density low on-resistance trench lateral power MOSFET with a trench bottom source contact
10.1109/ted.2002.801434 · 2002 · External reference
Unresolved reference
2010 · External reference
