Research graph
References from A holistic swarm optimization-driven Bayesian regularized neural network for GaN HEMT small-signal noise modeling with strong extrapolation capability. Local targets link to admitted publications; unresolved targets remain external evidence.
GaN high electron mobility transistors for sub-millimeter wave applications
10.7567/jjap.53.100212 · 2014 · External reference
Mobility limitations in Single- and double-heterostructure GaN HEMTs
10.1109/ted.2023.3311770 · 2023 · External reference
Ultrawide-bandgap semiconductors for high-frequency devices
10.1109/mmm.2024.3428193 · 2024 · External reference
Comprehensive analysis and investigation of GaN LNA for 3–4 GHz using different gate-drain spacing
10.1016/j.mee.2025.112361 · 2025 · External reference
Beyond the bandwidth limit: a tutorial on low-noise amplifier circuits for advanced systems based on III–V process
2024 · External reference
GaN HEMT noise modeling based on 50‐Ω noise factor
10.1002/mop.28983 · 2015 · External reference
Intrinsic noise equivalent-circuit parameters for AlGaN/GaN HEMTs
10.1109/tmtt.2003.810140 · 2003 · External reference
Analytical Modeling of High-Frequency Noise Including Temperature Effects in GaN HEMTs on High-Resistivity Si Substrates
10.1109/ted.2010.2047897 · 2010 · External reference
A unified drain current 1/f noise model for GaN-based high electron mobility transistors
2014 · External reference
Physics-based modeling and characterization of low frequency noise behavior for AlxGa1−xN/GaN HEMT
10.1063/5.0156798 · 2024 · External reference
Effects of trap density on drain current LFN and its model development for E-mode GaN MOS-HEMT
10.1016/j.spmi.2017.09.045 · 2017 · External reference
An improved noise modeling method using a quasi-physical zone division model for AlGaN/GaN HEMTs
10.1109/ted.2023.3249136 · 2023 · External reference
Physics‐based compact models of GaN HEMTs for high power RF applications: a review (Invited Paper)
10.1002/jnm.3276 · 2024 · External reference
Dual gate AlGaN/GaN MOS-HEMT biosensor for electrical detection of biomolecules-analytical model
10.1088/1361-6641/acb0f3 · 2023 · External reference
Computational modelling of cylindrical-ferroelectric-dual metal-nanowire field effect transistor (C-FE-DM-NW FET) using landau equation for gate leakage minimization
10.1016/j.micrna.2024.207851 · 2024 · External reference
Hetero-dielectric macaroni channel cylindrical gate all around field effect transistor (HD-MC CGAA FET) for reduced gate leakage analog applications
10.1007/s00542-023-05577-9 · 2024 · External reference
Numerical simulation of hetero dielectric trench gate JAM gate-all-around FET (HDTG-JAM-GAAFET) for label free biosensing applications
10.1149/2162-8777/ad161f · 2023 · External reference
A reliable and fast ANN based behavioral modeling approach for GaN HEMT
2019 · External reference
Neural models of microwave transistor noise parameters based on bias conditions and S-parameters
2001 · External reference
Behavioral-level modeling of GaN HEMT small-signal intrinsic noise based on DE-SVR algorithm
2022 · External reference
Optimized machine learning-augmented hybrid empirical models for AlGaN/GaN HEMTs: a comprehensive analysis
10.1109/access.2025.3594339 · 2025 · External reference
X-parameters modeling based on LSTM and CG-BPNN for transistor
2025 · External reference
Intrinsic noise behavioral modeling of GaN HEMTs under small-signal conditions using WOA-HKELM
10.1007/s10825-025-02488-y · 2026 · External reference
A neuro swarm procedure to solve the novel second order perturbed delay Lane-Emden model arising in astrophysics
10.1038/s41598-022-26566-4 · 2022 · External reference
FMNSICS: fractional Meyer neuro-swarm intelligent computing solver for nonlinear fractional Lane–Emden systems
10.1007/s00521-021-06452-2 · 2022 · External reference
Hybridization of the swarming and interior point algorithms to solve the Rabinovich–Fabrikant system
10.1038/s41598-023-37466-6 · 2023 · External reference
A novel ANN-PSO method for optimizing a small-signal equivalent model of a dual-field-plate GaN HEMT
10.3390/mi15121437 · 2024 · External reference
A hybrid GaN HEMT model merging artificial neural networks and ASM-HEMT for parameter precision and scalability
10.1109/ted.2024.3478181 · 2024 · External reference
On efficient modeling of drain current for designing high-power GaN HEMT-based circuits
10.1007/s10825-024-02225-x · 2024 · External reference
Machine learning facilitated business intelligence (Part I): neural networks learning algorithms and applications
10.1108/imds-07-2019-0361 · 2019 · External reference
A comparative analysis of L1, L2, and L1L2 regularization techniques in neural networks for image classification
2025 · External reference
A practical bayesian framework for backpropagation networks
10.1162/neco.1992.4.3.448 · 1992 · External reference
Holistic swarm optimization: a novel metaphor-less algorithm guided by whole population information for addressing exploration-exploitation dilemma
2024 · External reference
Physics‐based compact models of GaN HEMTs for high power RF applications: a review (Invited Paper)
10.1002/jnm.3276 · ExternalCitation · doi-reference
GaN HEMT noise modeling based on 50‐Ω noise factor
10.1002/mop.28983 · ExternalCitation · doi-reference
FMNSICS: fractional Meyer neuro-swarm intelligent computing solver for nonlinear fractional Lane–Emden systems
10.1007/s00521-021-06452-2 · ExternalCitation · doi-reference
Hetero-dielectric macaroni channel cylindrical gate all around field effect transistor (HD-MC CGAA FET) for reduced gate leakage analog applications
10.1007/s00542-023-05577-9 · ExternalCitation · doi-reference
On efficient modeling of drain current for designing high-power GaN HEMT-based circuits
10.1007/s10825-024-02225-x · ExternalCitation · doi-reference
Intrinsic noise behavioral modeling of GaN HEMTs under small-signal conditions using WOA-HKELM
10.1007/s10825-025-02488-y · ExternalCitation · doi-reference
Comprehensive analysis and investigation of GaN LNA for 3–4 GHz using different gate-drain spacing
10.1016/j.mee.2025.112361 · ExternalCitation · doi-reference
Computational modelling of cylindrical-ferroelectric-dual metal-nanowire field effect transistor (C-FE-DM-NW FET) using landau equation for gate leakage minimization
10.1016/j.micrna.2024.207851 · ExternalCitation · doi-reference
Effects of trap density on drain current LFN and its model development for E-mode GaN MOS-HEMT
10.1016/j.spmi.2017.09.045 · ExternalCitation · doi-reference
A neuro swarm procedure to solve the novel second order perturbed delay Lane-Emden model arising in astrophysics
10.1038/s41598-022-26566-4 · ExternalCitation · doi-reference
Hybridization of the swarming and interior point algorithms to solve the Rabinovich–Fabrikant system
10.1038/s41598-023-37466-6 · ExternalCitation · doi-reference
Physics-based modeling and characterization of low frequency noise behavior for AlxGa1−xN/GaN HEMT
10.1063/5.0156798 · ExternalCitation · doi-reference
Dual gate AlGaN/GaN MOS-HEMT biosensor for electrical detection of biomolecules-analytical model
10.1088/1361-6641/acb0f3 · ExternalCitation · doi-reference
Machine learning facilitated business intelligence (Part I): neural networks learning algorithms and applications
10.1108/imds-07-2019-0361 · ExternalCitation · doi-reference
Optimized machine learning-augmented hybrid empirical models for AlGaN/GaN HEMTs: a comprehensive analysis
10.1109/access.2025.3594339 · ExternalCitation · doi-reference
Ultrawide-bandgap semiconductors for high-frequency devices
10.1109/mmm.2024.3428193 · ExternalCitation · doi-reference
Analytical Modeling of High-Frequency Noise Including Temperature Effects in GaN HEMTs on High-Resistivity Si Substrates
10.1109/ted.2010.2047897 · ExternalCitation · doi-reference
An improved noise modeling method using a quasi-physical zone division model for AlGaN/GaN HEMTs
10.1109/ted.2023.3249136 · ExternalCitation · doi-reference
Mobility limitations in Single- and double-heterostructure GaN HEMTs
10.1109/ted.2023.3311770 · ExternalCitation · doi-reference
A hybrid GaN HEMT model merging artificial neural networks and ASM-HEMT for parameter precision and scalability
10.1109/ted.2024.3478181 · ExternalCitation · doi-reference
Intrinsic noise equivalent-circuit parameters for AlGaN/GaN HEMTs
10.1109/tmtt.2003.810140 · ExternalCitation · doi-reference
Numerical simulation of hetero dielectric trench gate JAM gate-all-around FET (HDTG-JAM-GAAFET) for label free biosensing applications
10.1149/2162-8777/ad161f · ExternalCitation · doi-reference
A practical bayesian framework for backpropagation networks
10.1162/neco.1992.4.3.448 · ExternalCitation · doi-reference
A novel ANN-PSO method for optimizing a small-signal equivalent model of a dual-field-plate GaN HEMT
10.3390/mi15121437 · ExternalCitation · doi-reference
GaN high electron mobility transistors for sub-millimeter wave applications
10.7567/jjap.53.100212 · ExternalCitation · doi-reference
