Research graph
References from Role of annealed copper plasticity in process-induced warpage of SiC power modules. Local targets link to admitted publications; unresolved targets remain external evidence.
A comparative evaluation of new silicon carbide diodes and state-of-the-art silicon diodes for power electronic applications
10.1109/tia.2003.813730 · 2003 · External reference
Effects of parasitic capacitance on switching transients and thermal performance in a single-phase SiC power MOSFET inverter
2026 · External reference
Application study of the benefits for using silicon-carbide versus silicon in power modules
2012 · External reference
Review of silicon carbide power devices and their applications
10.1109/tie.2017.2652401 · 2017 · External reference
A high-density, high-efficiency, isolated on-board vehicle battery charger utilizing silicon carbide power devices
10.1109/tpel.2013.2279950 · 2013 · External reference
Dynamic performance evaluation of bidirectional bridgeless interleaved totem-pole power factor correction boost converter
10.3390/mi16020223 · 2025 · External reference
High performance SiC MOSFET module for industrial applications
2016 · External reference
SiC power devices for industrial applications
2010 · External reference
A high-efficiency high-power-density SiC-based portable charger for electric vehicles
10.3390/electronics11121818 · 2022 · External reference
Full SiC power module with advanced structure and its solar inverter application
2013 · External reference
Extreme high efficiency enabled by silicon carbide (SiC) power devices
10.1016/j.mssp.2023.108052 · 2024 · External reference
Viscoelastic warpage modeling of fan-out wafer-level packaging during wafer-level mold cure process
10.1109/tcpmt.2020.2992041 · 2020 · External reference
Warpage and simulation analysis of panel level FO-WLCSP using equivalent CTE
2019 · External reference
Warpage analysis of fan-out panel-level packaging using equivalent CTE
10.1109/tdmr.2019.2956049 · 2019 · External reference
Panel warpage of fan-out panel-level packaging using RDL-first technology
10.1109/tcpmt.2019.2929529 · 2019 · External reference
Finite element analysis of flip-chip on board assembly during reflow soldering process
10.1108/09540911211214668 · 2012 · External reference
Power cycling modeling and lifetime evaluation of SiC power MOSFET module using a modified physical lifetime model
10.1109/tdmr.2024.3364695 · 2024 · External reference
Thermo-Mechanical simulation framework for assessing process-induced delamination risks in large-area fan-out panel-level packaging
10.1115/1.4070103 · 2026 · External reference
Warpage analysis and improvement for a power module
2013 · External reference
Optimization for warpage and residual stress due to reflow process in IGBT modules based on pre-warped substrate
10.1016/j.mee.2015.04.019 · 2015 · External reference
Warpage evaluation of high-temperature sandwich-structured power module for SiC power semiconductor devices
10.4071/imaps.464 · 2015 · External reference
Modelling warpage behavior of molded power modules for electric vehicles
2024 · External reference
Warping model of high-power IGBT modules subjected to reflow soldering process
10.1016/j.ijmecsci.2023.108350 · 2023 · External reference
Characterization of packaging warpage, residual stress and their effects on the mechanical reliability of IGBT power modules
10.1016/j.engfailanal.2023.107517 · 2023 · External reference
Warpage deformation analysis of AMB ceramic substrates in power modules
2024 · External reference
Modeling of residual stress, plastic deformation, and permanent warpage induced by the resin molding process in SiC-based power modules
10.3390/en18205364 · 2025 · External reference
Comprehensive influences of manufacturing process integrated with thermal cycling test loading on mechanical responses of power module
10.1109/tcpmt.2023.3304952 · 2023 · External reference
Effects of extreme temperature swings (-55°C to 250°C) on silicon nitride active metal brazing substrate
10.1109/tdmr.2014.2320057 · 2014 · External reference
Joining of alumina using a V-active filler metal
10.1016/s1359-6462(99)00273-0 · 1999 · External reference
Advantages and new development of direct bonded copper substrates
10.1016/s0026-2714(02)00343-8 · 2003 · External reference
Progress in joining ceramics to metals
10.1016/s1006-706x(06)60032-0 · 2006 · External reference
The science of engineering materials
10.1149/1.2412266 · 1969 · External reference
Material characterization of substrates for power modules
2006 · External reference
Material characterization and warpage modeling for power devices active metal brazed substrates
10.1109/tdmr.2019.2932971 · 2019 · External reference
Warpage variations of Si/solder/OFHC-Cu layered plates subjected to cyclic thermal loading
10.1016/j.microrel.2011.07.033 · 2011 · External reference
Hybrid integration of genetic algorithm, artificial neural network and mathematical programming for optimization
10.1093/jom/ufaf022 · 2025 · External reference
Second generation Pb-free alloys
10.37665/jsmtliwxu26477 · 2010 · External reference
Predicting plated-through-hole reliability in high temperature manufacturing processes
1991 · External reference
Characterization of packaging warpage, residual stress and their effects on the mechanical reliability of IGBT power modules
10.1016/j.engfailanal.2023.107517 · ExternalCitation · doi-reference
Warping model of high-power IGBT modules subjected to reflow soldering process
10.1016/j.ijmecsci.2023.108350 · ExternalCitation · doi-reference
Optimization for warpage and residual stress due to reflow process in IGBT modules based on pre-warped substrate
10.1016/j.mee.2015.04.019 · ExternalCitation · doi-reference
Warpage variations of Si/solder/OFHC-Cu layered plates subjected to cyclic thermal loading
10.1016/j.microrel.2011.07.033 · ExternalCitation · doi-reference
Extreme high efficiency enabled by silicon carbide (SiC) power devices
10.1016/j.mssp.2023.108052 · ExternalCitation · doi-reference
Advantages and new development of direct bonded copper substrates
10.1016/s0026-2714(02)00343-8 · ExternalCitation · doi-reference
Progress in joining ceramics to metals
10.1016/s1006-706x(06)60032-0 · ExternalCitation · doi-reference
Joining of alumina using a V-active filler metal
10.1016/s1359-6462(99)00273-0 · ExternalCitation · doi-reference
Hybrid integration of genetic algorithm, artificial neural network and mathematical programming for optimization
10.1093/jom/ufaf022 · ExternalCitation · doi-reference
Finite element analysis of flip-chip on board assembly during reflow soldering process
10.1108/09540911211214668 · ExternalCitation · doi-reference
Panel warpage of fan-out panel-level packaging using RDL-first technology
10.1109/tcpmt.2019.2929529 · ExternalCitation · doi-reference
Viscoelastic warpage modeling of fan-out wafer-level packaging during wafer-level mold cure process
10.1109/tcpmt.2020.2992041 · ExternalCitation · doi-reference
Comprehensive influences of manufacturing process integrated with thermal cycling test loading on mechanical responses of power module
10.1109/tcpmt.2023.3304952 · ExternalCitation · doi-reference
Effects of extreme temperature swings (-55°C to 250°C) on silicon nitride active metal brazing substrate
10.1109/tdmr.2014.2320057 · ExternalCitation · doi-reference
Material characterization and warpage modeling for power devices active metal brazed substrates
10.1109/tdmr.2019.2932971 · ExternalCitation · doi-reference
Warpage analysis of fan-out panel-level packaging using equivalent CTE
10.1109/tdmr.2019.2956049 · ExternalCitation · doi-reference
Power cycling modeling and lifetime evaluation of SiC power MOSFET module using a modified physical lifetime model
10.1109/tdmr.2024.3364695 · ExternalCitation · doi-reference
A comparative evaluation of new silicon carbide diodes and state-of-the-art silicon diodes for power electronic applications
10.1109/tia.2003.813730 · ExternalCitation · doi-reference
Review of silicon carbide power devices and their applications
10.1109/tie.2017.2652401 · ExternalCitation · doi-reference
A high-density, high-efficiency, isolated on-board vehicle battery charger utilizing silicon carbide power devices
10.1109/tpel.2013.2279950 · ExternalCitation · doi-reference
Thermo-Mechanical simulation framework for assessing process-induced delamination risks in large-area fan-out panel-level packaging
10.1115/1.4070103 · ExternalCitation · doi-reference
The science of engineering materials
10.1149/1.2412266 · ExternalCitation · doi-reference
A high-efficiency high-power-density SiC-based portable charger for electric vehicles
10.3390/electronics11121818 · ExternalCitation · doi-reference
Modeling of residual stress, plastic deformation, and permanent warpage induced by the resin molding process in SiC-based power modules
10.3390/en18205364 · ExternalCitation · doi-reference
Dynamic performance evaluation of bidirectional bridgeless interleaved totem-pole power factor correction boost converter
10.3390/mi16020223 · ExternalCitation · doi-reference
Second generation Pb-free alloys
10.37665/jsmtliwxu26477 · ExternalCitation · doi-reference
Warpage evaluation of high-temperature sandwich-structured power module for SiC power semiconductor devices
10.4071/imaps.464 · ExternalCitation · doi-reference
