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References from Gallium-containing sulfide binary and ternary materials by atomic layer deposition: precursor reactivities and growth fine chemistries. Local targets link to admitted publications; unresolved targets remain external evidence.
Atomic layer deposition of metal sulfide materials
10.1021/ar500360d · 2015 · External reference
Passivation of the GaAs (100) surface with a vapor-deposited GaS film
10.1116/1.590251 · 1998 · External reference
Optical and photoelectrical properties of GaS and CdTe thin films, components of GaS/CdTe heterojunctions
2006 · External reference
The P-T-X phase diagram of the system Ga-S
10.1149/1.2424122 · 1966 · External reference
Band alignment of molecular-beam-epitaxy-grown GaS/GaAs structure using a single [(t-Bu)GaS]4 precursor
10.1143/jjap.40.l104 · 2001 · External reference
Chemical vapor deposition of gallium sulfide thin films
10.1021/cm0003424 · 2000 · External reference
Growth, optical and structural characterization of layered GaS films prepared by reactive RF sputtering method
10.1143/jjap.44.4780 · 2005 · External reference
Influence of the synthesis conditions on gallium sulfide thin films prepared by modulated flux deposition
2009 · External reference
Atomic layer deposition of gallium sulfide films using hexakis(dimethylamido)digallium and hydrogen sulfide
10.1021/cm4031057 · 2014 · External reference
Gallium sulfide–single-walled carbon nanotube composites: high-performance anodes for lithium-ion batteries
10.1002/adfm.201401002 · 2014 · External reference
Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
10.1116/1.4937991 · 2016 · External reference
Chemical processes involved in atomic layer deposition of gallium sulfide: insights from theory
10.1021/acs.jpcc.6b12242 · 2017 · External reference
Unresolved reference
2013 · External reference
A facile self-assembled film assisted preparation of CuGaS2 ultrathin films and their high sensitivity to L-noradrenaline
10.1016/j.apsusc.2015.12.132 · 2016 · External reference
Structural and electrical properties of CuGaS2 thin films by electron beam evaporation
10.1016/s0927-0248(02)00110-1 · 2003 · External reference
Preparation and characterization of CuGaS2 thin films as a promising parent material for intermediate band solar cells
10.1016/j.mssp.2014.10.007 · 2015 · External reference
CuInS2 and CuGaS2 thin films grown by modulated flux deposition with various Cu contents
10.1002/pssa.200622132 · 2006 · External reference
Optical properties of epitaxial CuGaS2 layers on Si(111)
10.1016/s0022-3697(03)00199-9 · 2003 · External reference
Single source precursors for fabrication of I–III–VI2 thin-film solar cells via spray CVD
10.1016/s0040-6090(03)00196-2 · 2003 · External reference
Vapor-phase atomic layer epitaxy of CuGaS2 at atmospheric pressure using metal chlorides and H2S
10.1143/jjap.33.l244 · 1994 · External reference
Improvement in layer quality of CuGaS2 grown by vapor phase epitaxy with metal chlorides and H2S sources
10.7567/jjaps.32s3.145 · 1993 · External reference
Atomic layer deposition of copper sulfide thin films
10.1016/j.tsf.2016.01.015 · 2016 · External reference
Deposition of ultra thin CuInS2 absorber layers by ALD for thin film solar cells at low temperature (down to 150 °C)
10.1088/0957-4484/26/5/054001 · 2015 · External reference
Growth of wurtzite GaN on (0 0 1) GaAs substrates at low temperature by atomic layer epitaxy
10.1023/a:1006511725980 · 1998 · External reference
Comparative study of self-limiting growth of GaAs using different Ga-alkyl compounds: (CH3)3Ga, C2H5(CH3)2Ga, and (C2H5)3Ga
10.1063/1.346980 · 1990 · External reference
Atomic layer epitaxy of GaInP ordered alloy
10.1063/1.102553 · 1990 · External reference
Growth of gallium oxide thin films from gallium acetylacetonate by atomic layer epitaxy
10.1039/jm9960600027 · 1996 · External reference
The growth of ErxGa2- xO3 films by atomic layer deposition from two different precursor systems
10.1039/b616443a · 2007 · External reference
Atomic layer deposition of Ga2O3 films from a dialkylamido-based precursor
10.1021/cm0521424 · 2006 · External reference
Unresolved reference
1995 · External reference
XPS analysis of gallium oxides
10.1016/0169-4332(94)90104-x · 1994 · External reference
An XPS study of GaN thin films on GaAs
10.1002/sia.740160116 · 1990 · External reference
Analysis of sulfide layer on gallium arsenide using X-ray photoelectron spectroscopy
10.1016/s0584-8547(00)00230-5 · 2000 · External reference
Chemical vapor deposition of Ga2O3 thin films on Si substrates
10.5012/bkcs.2002.23.2.225 · 2002 · External reference
Calibration of computationally predicted N 1s binding energies by comparison with X-ray photoelectron spectroscopy measurements
10.1016/j.elspec.2009.07.002 · 2009 · External reference
XPS study on the dispersion of carbon additives in silicon carbide powders
10.1016/0169-4332(91)90400-e · 1991 · External reference
Optical properties and electronic structure of amorphous germanium
10.1002/pssb.19660150224 · 1966 · External reference
Facile one-pot synthesis of polytypic CuGaS2 nanoplates
10.1186/1556-276x-8-524 · 2013 · External reference
X-ray photoelectron spectroscopic study of copper minerals
10.1016/0022-1902(78)80152-3 · 1978 · External reference
Chemistry of Cu(acac)2 on Ni(110) and Cu(110) surfaces: implications for atomic layer deposition processes
2012 · External reference
Chemical vapor deposition of cubic gallium sulfide thin films: a new metastable phase
10.1021/cm00019a005 · 1992 · External reference
Interfaces and composition profiles in metal–sulfide nanolayers synthesized by atomic layer deposition
10.1021/cm3027225 · 2013 · External reference
Surface chemistry of copper metal and copper oxide atomic layer deposition from copper (ii) acetylacetonate: a combined first-principles and reactive molecular dynamics study
10.1039/c5cp03707g · 2015 · External reference
Highly uniform atomic layer-deposited MoS2@3D-Ni-foam: a novel approach to prepare an electrode for supercapacitors
10.1021/acsami.7b12248 · 2017 · External reference
Tin monosulfide thin films grown by atomic layer deposition using tin 2,4-pentanedionate and hydrogen sulfide
10.1021/jp9120244 · 2010 · External reference
Structural, optical, and electronic stability of copper sulfide thin films grown by atomic layer deposition
10.1039/c3ee40371h · 2013 · External reference
Vapor-phase atomic-controllable growth of amorphous Li2S for high-performance lithium–sulfur batteries
10.1021/nn505480w · 2014 · External reference
Atomic layer deposition of aluminum sulfide: growth mechanism and electrochemical evaluation in lithium-ion batteries
10.1021/acs.chemmater.7b02175 · 2017 · External reference
Phase and morphological transformations of GaS single crystal surface by thermal treatment
10.1016/j.apsusc.2012.08.031 · 2012 · External reference
Atomic layer deposition of iron sulfide and its application as a catalyst in the hydrogenation of azobenzenes
10.1002/ange.201700449 · 2017 · External reference
New pyrolysis route to GaN quantum dots
10.1021/cm060368g · 2006 · External reference
Atomic layer deposition of HfO2 onto Si using Hf(NMe2)4
2009 · External reference
Structural and spectroscopic characterization of the compounds [Al(NMe2)3]2, [Ga(NMe2)3]2, [(Me2N)2Al{μ-N(H)1-Ad}]2 (1-Ad = 1-adamantanyl) and [{Me(μ-NPh2)Al}2NPh(μ-C6H4)]
10.1016/s0277-5387(00)80578-1 · 1990 · External reference
