Research graph
References from Nanomaterial integration in micro LED technology: Enhancing efficiency and applications. Local targets link to admitted publications; unresolved targets remain external evidence.
Visible light-emitting diodes using a-plane GaN-InGaN multiple quantum wells over r-plane sapphire
10.1063/1.1738938 · 2004 · External reference
Recent progress on micro-LEDs
2023 · External reference
Evaluation of new color metrics: Guidelines for developing narrow-band red phosphors for WLEDs
2016 · External reference
High-brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays
10.1021/nl049615a · 2004 · External reference
Nuclear Magnetic Resonance Spectroscopy
2017 · External reference
Small-angle light and x-ray scattering in nanosciences and nanotechnology
2017 · External reference
GaN microdisk light emitting diodes
10.1063/1.125841 · 2000 · External reference
10.1016/c2019-0-00273-7
10.1016/c2019-0-00273-7 · External reference
Mini-LED, Micro-LED and OLED displays: present status and future perspectives
10.1038/s41377-020-0341-9 · 2020 · External reference
Full-color micro-LED display with high color stability using semipolar (20-21) InGaN LEDs and quantum-dot photoresist
10.1364/prj.388958 · 2020 · External reference
Narrow-band red-emitting Sr[LiAl3 N4]:Eu2+ as a next-generation LED-phosphor material
10.1038/nmat4012 · 2014 · External reference
ZnGeN2 and ZnGeN2:Mn2+ phosphors: hydrothermal-ammonolysis synthesis, structure and luminescence properties
2015 · External reference
Synthesis and properties of Nd-doped oxynitride phosphate laser glasses
10.1016/j.jnoncrysol.2017.08.005 · 2017 · External reference
Electromagnetic interference shielding materials for aerospace application
2018 · External reference
Prospects and challenges of mini-LED, OLED, and micro-LED displays
10.1002/jsid.1058 · 2021 · External reference
Nitride micro-LEDs and beyond - a decade progress review
10.1364/oe.21.00a475 · 2013 · External reference
Micro-LEDs, a Manufacturability Perspective
10.3390/app9061206 · 2019 · External reference
Ultrastable near-infrared perovskite light-emitting diodes
10.1038/s41566-022-01046-3 · 2022 · External reference
The micro-LED roadmap: status quo and prospects
2023 · External reference
Micro-light-emitting diodes with quantum dots in display technology
10.1038/s41377-020-0268-1 · 2020 · External reference
Micro-LED as a promising candidate for high-speed visible light communication
10.3390/app10207384 · 2020 · External reference
High-density matrix-addressable alInGaN-Based 368-nm microarray light-emitting diodes
10.1109/lpt.2004.835626 · 2004 · External reference
19-1: Invited Paper: micro-LED microdisplays by integration of III-V LEDs with silicon thin film transistors
10.1002/sdtp.11680 · 2017 · External reference
Advanced liquid crystal devices for augmented reality and virtual reality displays: principles and applications
10.1038/s41377-022-00851-3 · 2022 · External reference
AR/VR light engines: perspectives and challenges
10.1364/aop.468066 · 2022 · External reference
10.1117/12.2545330
10.1117/12.2545330 · External reference
3,000 ppi full-color “silicon display” with monolithic micro-LED and color conversion technology
2021 · External reference
Vertical full-colour micro-LEDs via 2D materials-based layer transfer
10.1038/s41586-022-05612-1 · 2023 · External reference
III-nitride blue microdisplays
10.1063/1.1351521 · 2001 · External reference
Micro-pixellated flip-chip InGaN and AlInGaN light-emitting diodes
2007 · External reference
Micro-LED arrays: a tool for two-dimensional neuron stimulation
10.1088/0022-3727/41/9/094014 · 2008 · External reference
III-Nitride full-scale high-resolution microdisplays
10.1063/1.3615679 · 2011 · External reference
360 PPI Flip-chip mounted active matrix addressable light emitting diode on silicon (LEDoS) micro-displays
10.1109/jdt.2013.2256107 · 2013 · External reference
1700 Pixels per inch (PPI) passive-matrix micro-LED display powered by ASIC
2014 · External reference
Resonant-enhanced full-color emission of quantum-dot-based micro LED display technology
10.1364/oe.23.032504 · 2015 · External reference
Optical cross-talk reduction in a quantum-dot-based full-color micro-light-emitting-diode display by a lithographic-fabricated photoresist mold
10.1364/prj.5.000411 · 2017 · External reference
A direct epitaxial approach to achieving ultrasmall and ultrabright InGaN micro light-emitting diodes (μLEDs)
10.1021/acsphotonics.9b01351 · 2020 · External reference
Demonstration of high wall-plug efficiency III-nitride micro-light-emitting diodes with MOCVD-grown tunnel junction contacts using chemical treatments
10.35848/1882-0786/ac1230 · 2021 · External reference
III-Nitride light-emitting devices
10.3390/photonics8100430 · 2021 · External reference
Impact of surface recombination on efficiency of III-nitride light-emitting diodes
10.1002/pssr.201600059 · 2016 · External reference
Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments
10.1364/oe.384127 · 2020 · External reference
Review—Visible LEDs: More than Efficient Light
10.1149/2.0402001jss · 2020 · External reference
Effects of experimental parameters on the growth of GaN nanowires on Ti-film/Si(1 0 0) and Ti-foil by molecular beam epitaxy
10.1016/j.jcrysgro.2020.125818 · 2020 · External reference
A simulation study on the enhancement of the efficiency of GaN-based blue light-emitting diodes at low current density for micro-LED applications
10.1088/2053-1591/ab3f7b · 2019 · External reference
Recent progress in group III-nitride nanostructures: From materials to applications
10.1016/j.mser.2020.100578 · 2020 · External reference
Sustained high external quantum efficiency in ultrasmall blue III–nitride micro-LEDs
10.7567/apex.10.032101 · 2017 · External reference
Highly efficient full-color inorganic LEDs on a single wafer by using multiple adhesive bonding
10.1002/admi.202100300 · 2021 · External reference
GaN nanowires on diamond
10.1016/j.mssp.2016.03.013 · 2016 · External reference
Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks
10.1016/j.jcrysgro.2011.04.035 · 2011 · External reference
Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays
10.1016/j.jcrysgro.2008.11.056 · 2009 · External reference
GaN nanowires on diamond
10.1016/j.mssp.2016.03.013 · 2016 · External reference
Self-Assembled GaN Nanowires on Diamond
10.1021/nl203872q · 2012 · External reference
Chemical composition fluctuations and strain relaxation in InGaN nanowires: the role of the metal/nitrogen flux ratio
10.1016/j.mssp.2016.03.006 · 2016 · External reference
Guided growth of epitaxially coherent GaN nanowires on SiC
10.1021/nl4030769 · 2013 · External reference
Recent progress in nanodiamonds: synthesis, properties and their potential applications
10.22261/8w2eg0 · 2018 · External reference
10.1016/b978-0-12-814031-4.00001-5
10.1016/b978-0-12-814031-4.00001-5 · External reference
Efficient Nanocarriers for Drug-Delivery Systems
2019 · External reference
10.1007/978-981-16-3322-5_1
10.1007/978-981-16-3322-5_1 · External reference
Unresolved reference
2018 · External reference
Recent Progress in Electromagnetic Absorbing Materials
10.1002/9781119128625.ch7 · 2018 · External reference
Nanostructured biomimetic, bioresponsive, and bioactive biomaterials
2018 · External reference
Guided growth of millimeter-long horizontal nanowires with controlled orientations
10.1126/science.1208455 · 2011 · External reference
Thermal and crystallization behavior of micro and nano fibrillar in-situ composites
2017 · External reference
10.1016/b978-0-08-101991-7.00005-4
10.1016/b978-0-08-101991-7.00005-4 · External reference
Catalyst-directed crystallographic orientation control of GaN nanowire growth
10.1021/nl502079v · 2014 · External reference
Metalorganic chemical vapor deposition of GaN nanowires: From catalyst-assisted to catalyst-free growth, and from self-assembled to selective-area growth
10.1016/j.mssp.2016.03.025 · 2016 · External reference
Defect Formation in Ga-Catalyzed Silicon Nanowires
10.1021/cg900741y · 2010 · External reference
III-nitride blue microdisplays
10.1063/1.1351521 · 2001 · External reference
III-nitride nanostructures for high efficiency micro-LEDs and ultraviolet optoelectronics
10.1109/jqe.2022.3151965 · 2022 · External reference
Technological breakthroughs in chip fabrication, transfer, and color conversion for high-performance micro-LED displays
10.1002/adma.202204947 · 2023 · External reference
A simple model for the ionization potential, electron affinity, and aqueous redox potentials of small semiconductor crystallites
10.1063/1.445676 · 1983 · External reference
One-dimensional nanostructures: synthesis, characterization, and applications
10.1002/adma.200390087 · 2003 · External reference
A review on the GaN-on-Si power electronic devices
10.1016/j.fmre.2021.11.028 · 2022 · External reference
Review on driving circuits for wide-bandgap semiconductor switching devices for mid-to high-power applications
2021 · External reference
Epitaxial growth of 1D GaN-based heterostructures on various substrates for photonic and energy applications
10.1039/d2na00711h · 2023 · External reference
Gan power devices: Current status and future challenges
10.7567/1347-4065/ab12c9 · 2019 · External reference
GaN-on-Silicon - Present capabilities and future directions
10.1063/1.5024484 · 2018 · External reference
GaN-based semiconductor devices for future power switching systems
2017 · External reference
Ultrafast carrier dynamics of conformally grown semi-polar (112̄2) GaN/InGaN multiple quantum well co-axial nanowires on m-axial GaN core nanowires
10.1039/c9nr02823d · 2019 · External reference
10.1021/acsomega.0c02411 · 2020 · Admitted local publication
Ultrafast carrier dynamics of conformally grown semi-polar (112̄2) GaN/InGaN multiple quantum well co-axial nanowires on m-axial GaN core nanowires
10.1039/c9nr02823d · 2019 · External reference
Universal and scalable route to fabricate GaN nanowire-based LED on amorphous substrate by MOCVD
2020 · External reference
Flexible self-powered piezoelectric pressure sensor based on GaN/p-GaN coaxial nanowires
10.1016/j.jallcom.2021.159661 · 2021 · External reference
Engineering GaN nanowire photoanode interfaces for efficient and stable photoelectrochemical water splitting
2022 · External reference
Growth of high-quality GaN nanowires on p-Si (1 1 1) and their performance in solid state heterojunction solar cells
10.1016/j.solener.2021.09.045 · 2021 · External reference
Guided growth of horizontal GaN nanowires on spinel with orientation-controlled morphologies
10.1021/jp504785v · 2014 · External reference
Kinetics and mechanism of planar nanowire growth
10.1073/pnas.1911505116 · 2020 · External reference
Kinetics of guided growth of horizontal gan nanowires on flat and faceted sapphire surfaces
10.3390/nano11030624 · 2021 · External reference
Micro-light-emitting diodes with quantum dots in display technology
10.1038/s41377-020-0268-1 · 2020 · External reference
Quantum Dots Color Converters for microLEDs: Material Composite and Patterning Technology
2020 · External reference
Color conversion of GaN-based micro light-emitting diodes using quantum dots
10.1109/lpt.2015.2462072 · 2015 · External reference
Dual role of quantum dots as color conversion layer and suppression of input light for full-color micro-LED displays
10.1021/acs.jpclett.1c00321 · 2021 · External reference
InGaN micro-light-emitting diodes monolithically grown on Si: achieving ultra-stable operation through polarization and strain engineering
10.1038/s41377-022-00985-4 · 2022 · External reference
Nano-grooves etching on top of GaN-LED for light extraction enhancement
10.1016/j.optlastec.2020.106842 · 2021 · External reference
Metallic nanostructures for efficient LED lighting
10.1038/lsa.2016.80 · 2016 · External reference
10.1007/978-3-030-53065-5_6
10.1007/978-3-030-53065-5_6 · External reference
Enhancement of electroluminescence in GaN-based light-emitting diodes by metallic nanoparticles
10.1063/1.3457349 · 2010 · External reference
Efficient emission of InGaN-based light-emitting diodes: toward orange and red
10.1364/prj.402555 · 2020 · External reference
Impact of tin-oxide nanoparticles on improving the carrier transport in the Ag/p-GaN interface of InGaN/GaN micro-light-emitting diodes by originating inhomogeneous Schottky barrier height
10.1364/prj.385249 · 2020 · External reference
A seamless three-dimensional carbon nanotube graphene hybrid material
10.1038/ncomms2234 · 2012 · External reference
Unresolved reference
External reference
Review on metallic oxide nanoparticles and their application in optoelectronic devices
10.32933/actainnovations.30.1 · 2019 · External reference
Ultrafast characterization 2D semiconducting TMDC for nanoelectronics application
2018 · External reference
Quantum-dot color wheel for projection displays
10.1364/optica.502938 · 2023 · External reference
Silicon nanostructures for bright field full color prints
10.1021/acsphotonics.6b01021 · 2017 · External reference
User-guided white balance for mixed lighting conditions
10.1145/2366145.2366219 · 2012 · External reference
Enhancement mechanism of quantum yield in alloyed-core/shell structure of ZnS-CuInS2/ZnS quantum dots
10.1021/acs.jpcc.0c10996 · 2021 · External reference
Multi-primary-color quantum-dot down-converting films for display applications
10.1364/oe.27.028480 · 2019 · External reference
Matt polyurethane coating: correlation of surface roughness on measurement length and gloss
10.3390/polym12020326 · 2020 · External reference
Scaling study of molecular beam epitaxy grown InAs/Al2O3 films using atomic force microscopy
10.1016/j.tsf.2020.138204 · 2020 · External reference
Distributed Bragg reflector consisting of high- and low-refractive-index thin film layers made of the same material
10.1063/1.2720269 · 2007 · External reference
Optimization design and preparation of near ultraviolet AlGaN/GaN distributed Bragg reflectors
2018 · External reference
How color break-up occurs in the human-visual system: the mechanism of the color break-up phenomenon
10.1889/1.2408396 · 2006 · External reference
Quantum dot based enhancement or elimination of color filters for liquid crystal display
10.1109/jstqe.2017.2748923 · 2017 · External reference
Effect of wavelength-dependent scattering on the color chromaticity of the LCD backlight
10.3807/josk.2013.17.3.275 · 2013 · External reference
Uniformity improvement of a mini-LED backlight by a quantum-dot color conversion film with nonuniform thickness
10.1364/ol.505552 · 2023 · External reference
Conducting Polyurethane Composites
2017 · External reference
Graphene-based fibers and their application in advanced composites system
2019 · External reference
Progress in polymer nanocomposites for electromagnetic shielding application
2018 · External reference
59-3: Distinguished Paper: wafer scale hybrid monolithic integration of Si-based IC and III-V Epilayers - a mass manufacturable approach for active matrix micro-LED displays
10.1002/sdtp.12374 · 2018 · External reference
Monolithic integrated device of GaN Micro-LED with graphene transparent electrode and graphene active-matrix driving transistor
10.3390/ma12030428 · 2019 · External reference
Integration technology of Micro-LED for next-generation display
10.34133/research.0047 · 2023 · External reference
A monolithically integrated micro-LED display based on GaN-on-silicon substrate
10.7567/1882-0786/ab64ff · 2020 · External reference
Size-dependent efficiency and efficiency droop of blue InGaN micro-light emitting diodes
10.1063/1.4769835 · 2012 · External reference
Comparison of size-dependent characteristics of blue and green InGaN microLEDs down to 1 μ m in diameter
10.1063/1.5144819 · 2020 · External reference
Dry-etch damage and its recovery in InGaN/GaN multi-quantum-well light-emitting diodes
10.1088/0268-1242/18/6/323 · 2003 · External reference
Revealing the importance of light extraction efficiency in InGaN/GaN microLEDs via chemical treatment and dielectric passivation
10.1063/5.0011651 · 2020 · External reference
Strategy toward the fabrication of ultrahigh-resolution micro-LED displays by bonding-interface-engineered vertical stacking and surface passivation
10.1039/c9nr04423j · 2019 · External reference
Removing plasma-induced sidewall damage in GaN-based light-emitting diodes by annealing and wet chemical treatments
2009 · External reference
Effect of KOH passivation for top-down fabricated InGaN nanowire light emitting diodes
10.1063/1.5123171 · 2019 · External reference
InGaN-based green micro-LED efficiency enhancement by hydrogen passivation of the p-GaN sidewall
10.35848/1882-0786/ac7fdc · 2022 · External reference
Patterned III-nitrides on porous gan: extending elastic relaxation from the nano- to the micrometer scale
10.1002/pssr.202100234 · 2021 · External reference
Emission wavelength red-shift by using “semi-bulk” InGaN buffer layer in InGaN/InGaN multiple-quantum-well
2017 · External reference
The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes
2018 · External reference
MicroLED technologies and applications: characteristics, fabrication, progress, and challenges
2021 · External reference
Growth, transfer printing and colour conversion techniques towards full-colour micro-LED display
10.1016/j.pquantelec.2020.100263 · 2020 · External reference
Research progress of micro-LED display technology
10.3390/cryst13071001 · 2023 · External reference
Transfer printing techniques for materials assembly and micro/nanodevice fabrication
10.1002/adma.201201386 · 2012 · External reference
Investigations of sidewall passivation technology on the optical performance for smaller Size GaN-based micro-LEDs
10.3390/cryst11040403 · 2021 · External reference
10.1117/12.2046332
10.1117/12.2046332 · External reference
Wireless closed-loop optogenetics across the entire dorsoventral spinal cord in mice
10.1038/s41587-021-01019-x · 2022 · External reference
Wafer-scale monolithic hybrid integration of <scp>Si</scp> -based <scp>IC</scp> and <scp>III–V</scp> epi-layers—a mass manufacturable approach for active matrix micro- <scp>LED</scp> micro-displays
10.1002/jsid.649 · 2018 · External reference
Function-based feasibility study and benchmark for MID concepts
10.1016/j.protcy.2016.08.042 · 2016 · External reference
10.1007/3-540-33410-6_27
10.1007/3-540-33410-6_27 · External reference
Generation of 3D functional structures for high- frequency applications by printing technologies
2018 · External reference
High-temperature electroluminescence properties of InGaN red 40 × 40 μ m2micro-light-emitting diodes with a peak external quantum efficiency of 3.2%
10.1063/5.0070275 · 2021 · External reference
Study on the effect of size on InGaN red micro-LEDs
10.1038/s41598-022-05370-0 · 2022 · External reference
Research Progress of Micro-LED Display Technology
10.3390/cryst13071001 · 2023 · External reference
Gallium nitride micro-LED displays (Conference Presentation)
2019 · External reference
Fabrication of phosphor-free III-nitride nanowire light-emitting diodes on metal substrates for flexible photonics
10.1021/acsomega.7b00843 · 2017 · External reference
18.3: Tape-assisted laser transfer techniques for selective transfer of Micro-LEDs with high placement accuracy
10.1002/sdtp.15080 · 2021 · External reference
A review on micro-LED display integrating metasurface structures
2023 · External reference
Growth and applications of Group III-nitrides
10.1088/0022-3727/31/20/001 · 1998 · External reference
Facile preparation and multifunctional applications of boron nitride quantum dots
10.1039/c5nr05960g · 2015 · External reference
A Multilayer process for the connection of fine-pitch-devices on molded interconnect devices (MIDs)
2008 · External reference
Active-matrix GaN micro light-emitting diode display with unprecedented brightness
10.1109/ted.2015.2416915 · 2015 · External reference
Recent progress in micro-LED-based display technologies
10.1002/lpor.202100427 · 2022 · External reference
Full-color realization of micro-LED displays
10.3390/nano10122482 · 2020 · External reference
Demonstration of high efficiency cascaded blue and green micro-light-emitting diodes with independent junction control
10.1063/5.0054005 · 2021 · External reference
Surface-roughened light-emitting diodes: an accurate model
10.1109/jdt.2013.2240373 · 2013 · External reference
Effects of different InGaN/GaN electron emission layers/interlayers on performance of a UV-A LED
2020 · External reference
Refractive index of heavily germanium-doped gallium nitride measured by spectral reflectometry and ellipsometry
10.3390/ma14237364 · 2021 · External reference
Group III nitride semiconductors for short wavelength light-emitting devices
10.1088/0034-4885/61/1/001 · 1998 · External reference
High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency
10.1063/1.125016 · 1999 · External reference
Invention, development, and status of the blue light-emitting diode, the enabler of solid-state lighting
10.1016/j.crhy.2017.12.001 · 2018 · External reference
IIIinitride ultraviolet micro- and nano-photonics
2005 · External reference
Review—the current and emerging applications of the III-nitrides
10.1149/2.0101712jss · 2017 · External reference
High efficiency InGaN nanowire tunnel junction green micro-LEDs
10.1063/5.0059701 · 2021 · External reference
Stability, reliability, and robustness of GaN power devices: a review
10.1109/tpel.2023.3266365 · 2023 · External reference
High efficiency green/yellow and red InGaN/AlGaN nanowire light-emitting diodes grown by molecular beam epitaxy
2017 · External reference
Color-tunable, phosphor-free InGaN nanowire light-emitting diode arrays monolithically integrated on silicon
10.1364/oe.22.0a1768 · 2014 · External reference
Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes
10.1063/1.3694967 · 2012 · External reference
Polarization-dependent optical characteristics of violet InGaN laser diodes
10.1063/1.2937247 · 2008 · External reference
Nanostructure and strain in InGaN/GaN superlattices grown in GaN nanowires
10.1088/0957-4484/24/43/435702 · 2013 · External reference
High-resolution mapping of strain partitioning and relaxation in InGaN/GaN nanowire heterostructures
10.1002/advs.202200323 · 2022 · External reference
Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment
10.1016/j.rinp.2021.105057 · 2021 · External reference
Thermal annealing of molecular beam epitaxy-grown InGaN/GaN single quantum well
10.1088/0268-1242/27/10/105023 · 2012 · External reference
Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice
10.1016/j.jcrysgro.2010.09.043 · 2011 · External reference
The effect of the low-mole InGaN structure and InGaN/GaN strained layer superlattices on optical performance of multiple quantum well active layers
10.1016/j.jcrysgro.2008.10.047 · 2008 · External reference
Scalable nanowire photonic crystals: molding the light emission of InGaN
10.1002/adfm.201702364 · 2017 · External reference
An electrically pumped surface-emitting semiconductor green laser
10.1126/sciadv.aav7523 · 2020 · External reference
Photonic crystals as topological high-Q resonators
10.1364/oe.22.018579 · 2014 · External reference
Micrometer scale InGaN green light emitting diodes with ultra-stable operation
2020 · External reference
Nitride micro-LEDs and beyond - a decade progress review
10.1364/oe.21.00a475 · 2013 · External reference
Radio-frequency molecular-beam-epitaxy growth of III nitrides for microsensor applications
10.1116/1.1386382 · 2001 · External reference
III-nitride nanostructures for high efficiency micro-LEDs and ultraviolet optoelectronics
10.1109/jqe.2022.3151965 · 2022 · External reference
III-Nitride micro and nano structures for solid state lightning
2014 · External reference
III-Nitride micro-LEDs for efficient emissive displays
10.1002/lpor.201900141 · 2019 · External reference
III-Nitride micro and nano structures for solid state lightning
2014 · External reference
Recent progress in group III-nitride nanostructures: from materials to applications
10.1016/j.mser.2020.100578 · 2020 · External reference
Stress engineering during metalorganic chemical vapor deposition of AlGaN/GaN distributed Bragg reflectors
10.1063/1.1371240 · 2001 · External reference
Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate
10.1063/1.4757873 · 2012 · External reference
Milliwatt-class GaN-based blue vertical-cavity surface-emitting lasers fabricated by epitaxial lateral overgrowth
2016 · External reference
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
10.1016/j.actamat.2012.10.042 · 2013 · External reference
Correlation between the surface undulation and luminescence characteristics in semi-polar 112¯2 InGaN/GaN multi-quantum wells
10.3390/nano13131946 · 2023 · External reference
The preparation and properties of vapor-deposited single-crystal-line GaN
10.1063/1.1652845 · 1969 · External reference
III-Nitride nanostructures for high efficiency micro-LEDs and ultraviolet optoelectronics
10.1109/jqe.2022.3151965 · 2022 · External reference
Resonant-enhanced full-color emission of quantum-dot-based micro LED display technology
10.1364/oe.23.032504 · 2015 · External reference
Research Progress of Micro-LED Display Technology
10.3390/cryst13071001 · 2023 · External reference
Resonant-enhanced full-color emission of quantum-dot-based micro LED display technology
10.1364/oe.23.032504 · 2015 · External reference
60.4: A Novel Full-Color 3LED Projection System using R-G-B Light Emitting Diodes on Silicon (LEDoS) Micro-displays
10.1002/j.2168-0159.2013.tb06348.x · 2013 · External reference
Visible-color-tunable light-emitting diodes
10.1002/adma.201100806 · 2011 · External reference
Advances in quantum-dot-based displays
10.3390/nano10071327 · 2020 · External reference
Mini-LED, Micro-LED and OLED displays: present status and future perspectives
10.1038/s41377-020-0341-9 · 2020 · External reference
AlGaN ultraviolet micro-LEDs
10.1109/jqe.2022.3159854 · 2022 · External reference
Mini-LED and Micro-LED: promising candidates for the next generation display technology
10.3390/app8091557 · 2018 · External reference
10.1016/b978-0-12-407819-2.00005-0
10.1016/b978-0-12-407819-2.00005-0 · External reference
Full-color InGaN/AlGaN nanowire micro light-emitting diodes grown by molecular beam epitaxy: a promising candidate for next generation micro displays
2019 · External reference
III-nitride semiconductors for intersubband optoelectronics: A review
10.1088/0268-1242/28/7/074022 · 2013 · External reference
19-1: Invited Paper: Micro-LED Microdisplays by Integration of III-V LEDs with Silicon Thin Film Transistors
10.1002/sdtp.11680 · 2017 · External reference
Monolithic integrated device of GaN micro-LED with graphene transparent electrode and graphene active-matrix driving transistor
10.3390/ma12030428 · 2019 · External reference
44-1: Invited Paper: Micro-LEDs for technological convergence between displays, optical communications, and sensing and imaging systems
10.1002/sdtp.13948 · 2020 · External reference
10.1007/978-981-33-6582-7_12
10.1007/978-981-33-6582-7_12 · External reference
Quantum dot design criteria for color conversion in microLED displays
10.1002/sdtp.12849 · 2019 · External reference
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
10.1016/j.actamat.2012.10.042 · 2013 · External reference
Gallium nitride nanostructures for light-emitting diode applications
10.1016/j.nanoen.2012.03.005 · 2012 · External reference
Review—the current and emerging applications of the III-nitrides
10.1149/2.0101712jss · 2017 · External reference
Gallium nitride nanostructures: synthesis, characterization and applications
10.1016/j.jcrysgro.2016.03.033 · 2016 · External reference
GaN based transistors for high power applications
10.1016/s0038-1101(98)00208-1 · 1998 · External reference
10.1109/pesc.2005.1581596
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