Research graph
References from Small-signal RF performance enhancement of GaN HEMT using a graded channel structure: A TCAD-to-circuit approach. Local targets link to admitted publications; unresolved targets remain external evidence.
Ku-band 25 w high power amplifier using 0.25 µm gan technology
2021 · External reference
Fully depleted SOI technology for millimeter-wave integrated circuits
10.1109/jeds.2022.3165877 · 2022 · External reference
Doherty power amplifier based on asymmetric cells with complex combining load
10.1109/tmtt.2021.3059666 · 2021 · External reference
X-band quasi class-F HPA MMIC using DynaFET GaN HEMT modelling
10.1049/ell2.13221 · 2024 · External reference
A 26–30 GHz GaN HEMT low-noise amplifier employing a series inductor-based stability enhancement technique
10.3390/electronics11172716 · 2022 · External reference
A GaN-on-SiC millimeter-wave low noise amplifier using hybrid-matching technique for 5G n258 applications
10.1002/mop.70031 · 2024 · External reference
Influence of fin-like configuration parameters on the linearity of algan/gan hemts
10.1109/ted.2021.3062561 · 2021 · External reference
W-band low-noise amplifier with improved stability using dual RC traps in bias networks on a 0.1 μm GaAs pHEMT process
10.3390/mi16020219 · 2025 · External reference
Highly scaled graded channel gan hemt with peak drain current of 2.48 a/mm
2021 · External reference
Design and optimization of an SSPP-matched GaN HEMT power amplifier using bayesian optimization
10.1002/jnm.70132 · 2025 · External reference
Design and optimization of an SSPP -matched GaN HEMT power amplifier using bayesian optimization
10.1002/jnm.70132 · 2025 · External reference
A review of Ku-band GaN HEMT power amplifiers development
10.3390/mi15111381 · 2024 · External reference
Improvement of AlGaN/GaN HEMTs linearity using etched-fin gate structure for ka band applications
10.3390/mi14050931 · 2023 · External reference
High-efficiency GaN-based power amplifiers for envelope nonlinearities’ Mitigation in VHF wideband polar-mode transmitters
10.3390/electronics12183866 · 2023 · External reference
Design of a high-power, high-efficiency GaN power amplifier for W-band applications
10.3390/mi16090985 · 2025 · External reference
Analysis of the back-barrier effect in algan/gan high electron mobility transistor on free-standing gan substrates
10.1016/j.jallcom.2019.152293 · 2020 · External reference
Impact of AlGaN barrier thickness and substrate material on the noise characteristics of GaN HEMT
10.1109/jeds.2022.3200120 · 2022 · External reference
A wideband E/W-band low-noise amplifier MMIC in a 70-nm gate-length GaN HEMT technology
10.1109/tmtt.2021.3134645 · 2022 · External reference
Design and robustness improvement of high-performance LNA using 0.15 μm GaN technology for X-band applications
10.1002/cta.3286 · 2022 · External reference
Ultra-low noise figure ka-band MMIC LNA with graded-channel GaN HEMTs
10.1049/ell2.70258 · 2025 · External reference
A 23–31 GHz high-gain GaN low-noise amplifier using T-type matching networks and multiple feedback techniques for broadband 5G millimeter-wave applications
10.1002/mop.33527 · 2022 · External reference
