Research graph
References from Development of boron-doped poly-SiCx for TOPCon solar cells. Local targets link to admitted publications; unresolved targets remain external evidence.
A study on the charge carrier transport of passivating contacts
10.1109/jphotov.2018.2870735 · 2018 · External reference
Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics
10.1016/j.solmat.2013.09.017 · 2014 · External reference
Ultrathin silicon dioxide layers with a low leakage current density formed by chemical oxidation of Si
10.1063/1.1517723 · 2002 · External reference
Unresolved reference
External reference
Comparison of firing stability between p‐ and n‐type polysilicon passivating contacts
10.1002/pip.3544 · 2022 · External reference
Silicon solar cells with passivating contacts: classification and performance
10.1002/pip.3574 · 2023 · External reference
Silicon-rich silicon carbide hole-selective rear contacts for crystalline-silicon-based solar cells
10.1021/acsami.6b12714 · 2016 · External reference
Current status and challenges for hole-selective poly-silicon based passivating contacts
10.1063/5.0185379 · 2024 · External reference
Highly passivating and blister-free hole selective poly-silicon based contact for large area crystalline silicon solar cells
10.1016/j.solmat.2019.109912 · 2019 · External reference
Highly improved passivation of PECVD p-type TOPCon by suppressing plasma-oxidation ion-bombardment-induced damages
10.1016/j.solener.2022.07.003 · 2022 · External reference
Suppression of film blistering in silicon nano-crystals/silicon oxide composite layer by insertion of intrinsic hydrogenated amorphous silicon layer
10.35848/1347-4065/adc00e · 2025 · External reference
Enhanced passivation of boron‐doped polysilicon passivated contacts with a single‐sided J0 of 2.8 fA/cm2 by dual‐layer silicon oxide structure
10.1002/smll.73603 · 2026 · External reference
Optical losses in silicon heterojunction solar cells: analysis of record-efficiency devices and practical limits based on ray-tracing simulations
10.1039/d5el00001g · 2025 · External reference
Blistering-free carbon-doped polysilicon (n+) passivating contact with high surface passivation properties prepared by industrial tube PECVD
10.1016/j.mssp.2023.107969 · 2024 · External reference
Novel polysilicon in resisting thermal-evaporation Al-electrode damage and its application in back-junction passivated contact p-type solar cells
10.1088/1361-6528/acec53 · 2023 · External reference
Achieving excellent surface passivation with J0,s less than 0.5 fA cm−2 utilizing a carbon‐incorporated intrinsic polysilicon‐based tunnel oxide passivating contact structure
10.1002/smtd.202500380 · 2025 · External reference
Interplay of annealing temperature and doping in hole selective rear contacts based on silicon-rich silicon-carbide thin films
10.1016/j.solmat.2017.06.039 · 2017 · External reference
Compositional analysis of (p) a-SiCx:H emitter layers for enhanced short-circuit current density in SHJ solar cells
10.1016/j.mssp.2026.110912 · 2026 · External reference
Hydrogen thermal activation of defects enabling firing stable Poly-Si based passivating contacts for TOPCon solar cells
10.1016/j.solener.2024.112838 · 2024 · External reference
The concept of skins for silicon solar cell modeling
10.1016/j.solmat.2017.05.012 · 2017 · External reference
Simulation of TOPCoRE solar cells: impact of boron doping parameters of P+ layer localized under front side metal contacts on cell performance
10.1007/s12633-026-03717-0 · 2026 · External reference
Unresolved reference
2025 · External reference
Calibration of the WCT‐100 photoconductance instrument at low conductance
10.1002/pip.810 · 2008 · External reference
Hydrogen in amorphous and microcrystalline silicon films prepared by hydrogen dilution
10.1063/1.363541 · 1996 · External reference
Infrared absorption strength and hydrogen content of hydrogenated amorphous silicon
10.1103/physrevb.45.13367 · 1992 · External reference
Spectroscopic review of hydrogenated, carbonated and oxygenated group IV alloys
10.1016/j.vibspec.2022.103387 · 2022 · External reference
Low residual stress in hydrogenated amorphous silicon-carbon films deposited by low-temperature PECVD
10.1016/j.jmrt.2019.09.026 · 2019 · External reference
Electrochemical capacitance-voltage depth profiling of heavily boron-doped silicon
10.1016/0022-0248(95)00397-5 · 1995 · External reference
Unresolved reference
2026 · External reference
Crystalline silicon solar cells with coannealed Electron- and hole-selective SiCx passivating contacts
10.1109/jphotov.2018.2866189 · 2018 · External reference
Review on hydrogen in silicon solar cells: from its origin to its detrimental effects
10.1016/j.solmat.2025.113432 · 2025 · External reference
Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells
10.1016/j.solmat.2016.06.040 · 2016 · External reference
Phosphorus-diffused polysilicon contacts for solar cells
10.1016/j.solmat.2015.06.001 · 2015 · External reference
Thermal activation of hydrogen for defect passivation in poly-Si based passivating contacts
10.1016/j.solmat.2021.111267 · 2021 · External reference
Thermal activation energy for the passivation of the n-type crystalline silicon surface by hydrogenated amorphous silicon
10.1063/1.3120765 · 2009 · External reference
Molecular models and activation energies for bonding rearrangement in plasma-deposited a − SiNx : H dielectric thin films treated by rapid thermal annealing
10.1103/physrevb.63.245320 · 2001 · External reference
Nitrous oxide-plasma silicon oxide coupled with carbon-incorporated polycrystalline silicon enables highly passivated TOPCon solar cells
2026 · External reference
Metallisation of boron‐doped polysilicon layers by screen printed silver pastes
2017 · External reference
Local p+poly‐si passivating contacts realized by direct FlexTrail printing of boron ink and selective alkaline etching for high efficiency TOPCon based solar cells
10.1002/pip.3901 · 2026 · External reference
A parameterization of light trapping in wafer-based solar cells
10.1109/jphotov.2015.2465175 · 2015 · External reference
Comparison of firing stability between p‐ and n‐type polysilicon passivating contacts
10.1002/pip.3544 · ExternalCitation · doi-reference
Silicon solar cells with passivating contacts: classification and performance
10.1002/pip.3574 · ExternalCitation · doi-reference
Local p+poly‐si passivating contacts realized by direct FlexTrail printing of boron ink and selective alkaline etching for high efficiency TOPCon based solar cells
10.1002/pip.3901 · ExternalCitation · doi-reference
Calibration of the WCT‐100 photoconductance instrument at low conductance
10.1002/pip.810 · ExternalCitation · doi-reference
Enhanced passivation of boron‐doped polysilicon passivated contacts with a single‐sided J0 of 2.8 fA/cm2 by dual‐layer silicon oxide structure
10.1002/smll.73603 · ExternalCitation · doi-reference
Achieving excellent surface passivation with J0,s less than 0.5 fA cm−2 utilizing a carbon‐incorporated intrinsic polysilicon‐based tunnel oxide passivating contact structure
10.1002/smtd.202500380 · ExternalCitation · doi-reference
Simulation of TOPCoRE solar cells: impact of boron doping parameters of P+ layer localized under front side metal contacts on cell performance
10.1007/s12633-026-03717-0 · ExternalCitation · doi-reference
Electrochemical capacitance-voltage depth profiling of heavily boron-doped silicon
10.1016/0022-0248(95)00397-5 · ExternalCitation · doi-reference
Low residual stress in hydrogenated amorphous silicon-carbon films deposited by low-temperature PECVD
10.1016/j.jmrt.2019.09.026 · ExternalCitation · doi-reference
Blistering-free carbon-doped polysilicon (n+) passivating contact with high surface passivation properties prepared by industrial tube PECVD
10.1016/j.mssp.2023.107969 · ExternalCitation · doi-reference
Compositional analysis of (p) a-SiCx:H emitter layers for enhanced short-circuit current density in SHJ solar cells
10.1016/j.mssp.2026.110912 · ExternalCitation · doi-reference
Highly improved passivation of PECVD p-type TOPCon by suppressing plasma-oxidation ion-bombardment-induced damages
10.1016/j.solener.2022.07.003 · ExternalCitation · doi-reference
Hydrogen thermal activation of defects enabling firing stable Poly-Si based passivating contacts for TOPCon solar cells
10.1016/j.solener.2024.112838 · ExternalCitation · doi-reference
Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics
10.1016/j.solmat.2013.09.017 · ExternalCitation · doi-reference
Phosphorus-diffused polysilicon contacts for solar cells
10.1016/j.solmat.2015.06.001 · ExternalCitation · doi-reference
Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells
10.1016/j.solmat.2016.06.040 · ExternalCitation · doi-reference
The concept of skins for silicon solar cell modeling
10.1016/j.solmat.2017.05.012 · ExternalCitation · doi-reference
Interplay of annealing temperature and doping in hole selective rear contacts based on silicon-rich silicon-carbide thin films
10.1016/j.solmat.2017.06.039 · ExternalCitation · doi-reference
Highly passivating and blister-free hole selective poly-silicon based contact for large area crystalline silicon solar cells
10.1016/j.solmat.2019.109912 · ExternalCitation · doi-reference
Thermal activation of hydrogen for defect passivation in poly-Si based passivating contacts
10.1016/j.solmat.2021.111267 · ExternalCitation · doi-reference
Review on hydrogen in silicon solar cells: from its origin to its detrimental effects
10.1016/j.solmat.2025.113432 · ExternalCitation · doi-reference
Spectroscopic review of hydrogenated, carbonated and oxygenated group IV alloys
10.1016/j.vibspec.2022.103387 · ExternalCitation · doi-reference
Silicon-rich silicon carbide hole-selective rear contacts for crystalline-silicon-based solar cells
10.1021/acsami.6b12714 · ExternalCitation · doi-reference
Optical losses in silicon heterojunction solar cells: analysis of record-efficiency devices and practical limits based on ray-tracing simulations
10.1039/d5el00001g · ExternalCitation · doi-reference
Ultrathin silicon dioxide layers with a low leakage current density formed by chemical oxidation of Si
10.1063/1.1517723 · ExternalCitation · doi-reference
Thermal activation energy for the passivation of the n-type crystalline silicon surface by hydrogenated amorphous silicon
10.1063/1.3120765 · ExternalCitation · doi-reference
Hydrogen in amorphous and microcrystalline silicon films prepared by hydrogen dilution
10.1063/1.363541 · ExternalCitation · doi-reference
Current status and challenges for hole-selective poly-silicon based passivating contacts
10.1063/5.0185379 · ExternalCitation · doi-reference
Novel polysilicon in resisting thermal-evaporation Al-electrode damage and its application in back-junction passivated contact p-type solar cells
10.1088/1361-6528/acec53 · ExternalCitation · doi-reference
Infrared absorption strength and hydrogen content of hydrogenated amorphous silicon
10.1103/physrevb.45.13367 · ExternalCitation · doi-reference
Molecular models and activation energies for bonding rearrangement in plasma-deposited a − SiNx : H dielectric thin films treated by rapid thermal annealing
10.1103/physrevb.63.245320 · ExternalCitation · doi-reference
A parameterization of light trapping in wafer-based solar cells
10.1109/jphotov.2015.2465175 · ExternalCitation · doi-reference
Crystalline silicon solar cells with coannealed Electron- and hole-selective SiCx passivating contacts
10.1109/jphotov.2018.2866189 · ExternalCitation · doi-reference
A study on the charge carrier transport of passivating contacts
10.1109/jphotov.2018.2870735 · ExternalCitation · doi-reference
Suppression of film blistering in silicon nano-crystals/silicon oxide composite layer by insertion of intrinsic hydrogenated amorphous silicon layer
10.35848/1347-4065/adc00e · ExternalCitation · doi-reference
