Research graph
References from Cusp-magnetic-field process window optimization for oxygen and vacancy–oxygen defect control in photovoltaic Czochralski silicon growth. Local targets link to admitted publications; unresolved targets remain external evidence.
Unresolved reference
2024 · External reference
Unresolved reference
2023 · External reference
Growth of semiconductor silicon crystals
10.1016/j.pcrysgrow.2016.04.014 · 2016 · External reference
History and trends in solar irradiance and PV power forecasting: a preliminary assessment and review using text mining
10.1016/j.solener.2017.11.023 · 2018 · External reference
Crystalline silicon (c-Si)-Based tunnel oxide passivated contact (TOPCon) solar cells: a review
10.3390/en16020715 · 2023 · External reference
Monolithic Perovskite/Silicon Tandem solar cell with 28.7% efficiency using industrial silicon bottom cells
10.1021/acsenergylett.2c01358 · 2022 · External reference
Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 26%
10.1038/nenergy.2017.32 · 2017 · External reference
Crystal surface heat transfer during the growth of 300mm monocrystalline silicon by the Czochralski process
10.1016/j.ijheatmasstransfer.2024.126259 · 2025 · External reference
Spatial lifecycles of cleantech industries – the global development history of solar photovoltaics
10.1016/j.enpol.2016.10.034 · 2017 · External reference
300mm Czochralski silicon wafers optimized with respect to voids with laterally homogeneous oxygen precipitation
10.1016/j.physb.2011.08.055 · 2012 · External reference
Warpage of Czochralski-Grown silicon wafers as affected by oxygen precipitation
10.1143/jjap.24.815 · 1985 · External reference
Study of flow pattern defects and oxidation induced stacking faults in czochralski single-crystal silicon growth
10.3390/cryst13020336 · 2023 · External reference
Oxygen diffusion and precipitation in Czochralski silicon
10.1088/0953-8984/12/25/201 · 2000 · External reference
Defect engineering of Czochralski single-crystal silicon
10.1016/s0927-796x(00)00015-2 · 2000 · External reference
Annealing of the divacancy-oxygen and vacancy-oxygen complexes in silicon
10.1103/physrevb.75.155202 · 2007 · External reference
Oxide micro‐precipitates in as‐grown CZ silicon
10.1149/1.2123679 · 1982 · External reference
Study of the conversion of the VO to the VO2 defect in silicon heat-treated under uniform stress conditions
10.1063/1.1430529 · 2002 · External reference
Detecting efficiency‐limiting defects in czochralski‐grown silicon wafers in solar cell production using photoluminescence imaging
2011 · External reference
The effect of oxide precipitates on minority carrier lifetime in p-type silicon
10.1063/1.3632067 · 2011 · External reference
Minority carrier lifetime in silicon photovoltaics: the effect of oxygen precipitation
10.1016/j.solmat.2013.06.018 · 2014 · External reference
The effect of oxide precipitates on minority carrier lifetime in n -type silicon
10.1063/1.4936852 · 2015 · External reference
Impact of phosphorus diffusion pre-gettering on the electrical properties of oxygen precipitates in n-type Czochralski silicon for heterojunction solar cells
10.1016/j.solmat.2025.113739 · 2025 · External reference
Oxygen-related micro-defects in Czochralski silicon annealed at enhanced stress conditions
10.1016/s1466-6049(01)00125-8 · 2001 · External reference
Study on effect of impurity concentration and thermal stress on vacancy-oxygen complexes in n-type G12 single crystal silicon by Czochralski method
10.1016/j.mssp.2025.109419 · 2025 · External reference
New oxygen infrared bands in annealed irradiated silicon
10.1103/physrev.135.a1381 · 1964 · External reference
Defect engineering in Czochralski silicon by electron irradiation at different temperatures
10.1016/s0168-583x(01)00871-0 · 2002 · External reference
Growth of 300 mm n-type recharged Czochralski silicon crystal with low oxygen content by dual side-heaters
10.1016/j.solmat.2025.113802 · 2025 · External reference
Numerical and experimental investigation of oxygen transport in 300 mm Czochralski silicon crystal growth with transverse magnetic fields
10.1016/j.vacuum.2024.113994 · 2025 · External reference
Crystal growth and oxygen precipitation behavior of 300mm nitrogen-doped Czochralski silicon
10.1016/j.jcrysgro.2006.04.015 · 2006 · External reference
Oxygen precipitation in lightly and heavily doped Czochralski silicon
10.1149/1.2355747 · 2006 · External reference
Grown-in precipitates in heavily phosphorus-doped Czochralski silicon
10.1063/1.3682112 · 2012 · External reference
Analysis of the effect of symmetric/asymmetric CUSP magnetic fields on melt/crystal interface during Czochralski silicon growth
10.1016/j.jcrysgro.2015.12.001 · 2016 · External reference
Argon-induced thermal field optimization and oxygen volatilization for vacancy-oxygen defect control in CZ silicon growth
10.1016/j.applthermaleng.2025.128610 · 2025 · External reference
Numerical investigation of coupled effects of rotational speed difference and growth rate on VOx defect behavior in Czochralski silicon
10.1002/crat.70040 · 2025 · External reference
Intrinsic point defects and impurities in silicon crystal growth
10.1149/1.1435361 · 2002 · External reference
Effects of crystal-crucible iso-rotation and a balanced/unbalanced cusp magnetic field on the heat, flow, and oxygen transport in a Czochralski silicon melt
10.1016/j.jcrysgro.2019.125373 · 2020 · External reference
Effect of magnetic field on the characteristic of silicon single crystal
10.1088/0256-307x/6/11/008 · 1989 · External reference
Three-dimensional numerical analyses of the effects of a cusp magnetic field on the flows, oxygen transport and heat transfer in a Czochralski silicon melt
10.1016/0022-0248(92)90333-e · 1992 · External reference
Unresolved reference
External reference
Study on the effect of Cusp magnetic field on melt flow behavior and phosphorus doping uniformity during the growth of large-size monocrystalline silicon
10.1021/acs.cgd.5c01308 · 2026 · External reference
Effect of crucible rotation and crystal rotation on the oxygen distribution at the solid-liquid interface during the growth of Czochralski monocrystalline silicon under superconducting horizontal magnetic field
10.1016/j.rinp.2019.02.063 · 2019 · External reference
Design of a 1500 Gs cusp superconducting magnet and its application simulation for 300 mm Czochralski crystal growth process
10.1063/5.0275031 · 2025 · External reference
Design and optimization of superconducting CUSP electromagnetic field structure based on a COMSOL-GMDH-MOSO hybrid strategy
10.1016/j.rinp.2023.106720 · 2023 · External reference
Global simulation of the CZ silicon crystal growth up to 400mm in diameter
10.1016/s0022-0248(01)01044-2 · 2001 · External reference
Study on oxygen control of large diameter N-type monocrystalline silicon with large thermal field
10.1007/s12633-023-02708-9 · 2024 · External reference
Simulation of heat transfer and oxygen transport in a czochralski silicon System with and without a cusp magnetic field
10.1016/s1004-9541(06)60031-1 · 2006 · External reference
Sensitivity analysis-driven machine learning approach for groundwater quality prediction: insights from integrating ENTROPY and CRITIC methods
10.1016/j.gsd.2024.101309 · 2024 · External reference
Determining objective weights in multiple criteria problems: the critic method
10.1016/0305-0548(94)00059-h · 1995 · External reference
Unresolved reference
External reference
Unresolved reference
2025 · External reference
Numerical investigation of coupled effects of rotational speed difference and growth rate on VOx defect behavior in Czochralski silicon
10.1002/crat.70040 · ExternalCitation · doi-reference
Study on oxygen control of large diameter N-type monocrystalline silicon with large thermal field
10.1007/s12633-023-02708-9 · ExternalCitation · doi-reference
Three-dimensional numerical analyses of the effects of a cusp magnetic field on the flows, oxygen transport and heat transfer in a Czochralski silicon melt
10.1016/0022-0248(92)90333-e · ExternalCitation · doi-reference
Determining objective weights in multiple criteria problems: the critic method
10.1016/0305-0548(94)00059-h · ExternalCitation · doi-reference
Argon-induced thermal field optimization and oxygen volatilization for vacancy-oxygen defect control in CZ silicon growth
10.1016/j.applthermaleng.2025.128610 · ExternalCitation · doi-reference
Spatial lifecycles of cleantech industries – the global development history of solar photovoltaics
10.1016/j.enpol.2016.10.034 · ExternalCitation · doi-reference
Sensitivity analysis-driven machine learning approach for groundwater quality prediction: insights from integrating ENTROPY and CRITIC methods
10.1016/j.gsd.2024.101309 · ExternalCitation · doi-reference
Crystal surface heat transfer during the growth of 300mm monocrystalline silicon by the Czochralski process
10.1016/j.ijheatmasstransfer.2024.126259 · ExternalCitation · doi-reference
Crystal growth and oxygen precipitation behavior of 300mm nitrogen-doped Czochralski silicon
10.1016/j.jcrysgro.2006.04.015 · ExternalCitation · doi-reference
Analysis of the effect of symmetric/asymmetric CUSP magnetic fields on melt/crystal interface during Czochralski silicon growth
10.1016/j.jcrysgro.2015.12.001 · ExternalCitation · doi-reference
Effects of crystal-crucible iso-rotation and a balanced/unbalanced cusp magnetic field on the heat, flow, and oxygen transport in a Czochralski silicon melt
10.1016/j.jcrysgro.2019.125373 · ExternalCitation · doi-reference
Study on effect of impurity concentration and thermal stress on vacancy-oxygen complexes in n-type G12 single crystal silicon by Czochralski method
10.1016/j.mssp.2025.109419 · ExternalCitation · doi-reference
Growth of semiconductor silicon crystals
10.1016/j.pcrysgrow.2016.04.014 · ExternalCitation · doi-reference
300mm Czochralski silicon wafers optimized with respect to voids with laterally homogeneous oxygen precipitation
10.1016/j.physb.2011.08.055 · ExternalCitation · doi-reference
Effect of crucible rotation and crystal rotation on the oxygen distribution at the solid-liquid interface during the growth of Czochralski monocrystalline silicon under superconducting horizontal magnetic field
10.1016/j.rinp.2019.02.063 · ExternalCitation · doi-reference
Design and optimization of superconducting CUSP electromagnetic field structure based on a COMSOL-GMDH-MOSO hybrid strategy
10.1016/j.rinp.2023.106720 · ExternalCitation · doi-reference
History and trends in solar irradiance and PV power forecasting: a preliminary assessment and review using text mining
10.1016/j.solener.2017.11.023 · ExternalCitation · doi-reference
Minority carrier lifetime in silicon photovoltaics: the effect of oxygen precipitation
10.1016/j.solmat.2013.06.018 · ExternalCitation · doi-reference
Impact of phosphorus diffusion pre-gettering on the electrical properties of oxygen precipitates in n-type Czochralski silicon for heterojunction solar cells
10.1016/j.solmat.2025.113739 · ExternalCitation · doi-reference
Growth of 300 mm n-type recharged Czochralski silicon crystal with low oxygen content by dual side-heaters
10.1016/j.solmat.2025.113802 · ExternalCitation · doi-reference
Numerical and experimental investigation of oxygen transport in 300 mm Czochralski silicon crystal growth with transverse magnetic fields
10.1016/j.vacuum.2024.113994 · ExternalCitation · doi-reference
Global simulation of the CZ silicon crystal growth up to 400mm in diameter
10.1016/s0022-0248(01)01044-2 · ExternalCitation · doi-reference
Defect engineering in Czochralski silicon by electron irradiation at different temperatures
10.1016/s0168-583x(01)00871-0 · ExternalCitation · doi-reference
Defect engineering of Czochralski single-crystal silicon
10.1016/s0927-796x(00)00015-2 · ExternalCitation · doi-reference
Simulation of heat transfer and oxygen transport in a czochralski silicon System with and without a cusp magnetic field
10.1016/s1004-9541(06)60031-1 · ExternalCitation · doi-reference
Oxygen-related micro-defects in Czochralski silicon annealed at enhanced stress conditions
10.1016/s1466-6049(01)00125-8 · ExternalCitation · doi-reference
Study on the effect of Cusp magnetic field on melt flow behavior and phosphorus doping uniformity during the growth of large-size monocrystalline silicon
10.1021/acs.cgd.5c01308 · ExternalCitation · doi-reference
Monolithic Perovskite/Silicon Tandem solar cell with 28.7% efficiency using industrial silicon bottom cells
10.1021/acsenergylett.2c01358 · ExternalCitation · doi-reference
Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 26%
10.1038/nenergy.2017.32 · ExternalCitation · doi-reference
Study of the conversion of the VO to the VO2 defect in silicon heat-treated under uniform stress conditions
10.1063/1.1430529 · ExternalCitation · doi-reference
The effect of oxide precipitates on minority carrier lifetime in p-type silicon
10.1063/1.3632067 · ExternalCitation · doi-reference
Grown-in precipitates in heavily phosphorus-doped Czochralski silicon
10.1063/1.3682112 · ExternalCitation · doi-reference
The effect of oxide precipitates on minority carrier lifetime in n -type silicon
10.1063/1.4936852 · ExternalCitation · doi-reference
Design of a 1500 Gs cusp superconducting magnet and its application simulation for 300 mm Czochralski crystal growth process
10.1063/5.0275031 · ExternalCitation · doi-reference
Effect of magnetic field on the characteristic of silicon single crystal
10.1088/0256-307x/6/11/008 · ExternalCitation · doi-reference
Oxygen diffusion and precipitation in Czochralski silicon
10.1088/0953-8984/12/25/201 · ExternalCitation · doi-reference
New oxygen infrared bands in annealed irradiated silicon
10.1103/physrev.135.a1381 · ExternalCitation · doi-reference
Annealing of the divacancy-oxygen and vacancy-oxygen complexes in silicon
10.1103/physrevb.75.155202 · ExternalCitation · doi-reference
Warpage of Czochralski-Grown silicon wafers as affected by oxygen precipitation
10.1143/jjap.24.815 · ExternalCitation · doi-reference
Intrinsic point defects and impurities in silicon crystal growth
10.1149/1.1435361 · ExternalCitation · doi-reference
Oxide micro‐precipitates in as‐grown CZ silicon
10.1149/1.2123679 · ExternalCitation · doi-reference
Oxygen precipitation in lightly and heavily doped Czochralski silicon
10.1149/1.2355747 · ExternalCitation · doi-reference
Study of flow pattern defects and oxidation induced stacking faults in czochralski single-crystal silicon growth
10.3390/cryst13020336 · ExternalCitation · doi-reference
Crystalline silicon (c-Si)-Based tunnel oxide passivated contact (TOPCon) solar cells: a review
10.3390/en16020715 · ExternalCitation · doi-reference
