References

10.1117/12.154854

10.1117/12.154854 · External reference

Unresolved reference

External reference

Unresolved reference

External reference

Proposal of the detectivity d** for detectors limited by radiation noise

10.1364/josa.50.001058 · 1960 · External reference

Noise in radiation detectors

10.1109/jrproc.1959.287042 · 1959 · External reference

Quantum well infrared photodetectors

10.1063/1.354252 · 1993 · External reference

Performance of generation III 640×480 ptsi MOS array

10.1117/12.179685 · 1994 · External reference

15 μm 128×128 GaAs/AlGaAs quantum well infrared photodetector focal plane array camera

10.1109/16.554790 · 1997 · External reference

Long-wavelength 256×256 GaAs/AlGaAs quantum well infrared photodetector (QWIP) palm-size camera

10.1109/16.822276 · 2000 · External reference

10.1117/12.271178

10.1117/12.271178 · External reference

10.1117/12.271169

10.1117/12.271169 · External reference

QWIPs: a serious alternative to HgCdTe for long-wavelength infrared imaging

1998 · External reference

A two stack indirect barrier/triple coupled quantum well infrared detector for mid-wavelength and long wavelength infrared dual band detection

10.1063/1.120386 · 1997 · External reference

Two color infrared photodetector using GaAs/AlGaAs and strained InGaAs/AlGaAs multiquantum wells

10.1063/1.109009 · 1993 · External reference

10.1109/leos.1992.694111

10.1109/leos.1992.694111 · External reference

Unresolved reference

1997 · External reference

A new infrared detector using electron emission from multiple quantum wells

10.1116/1.582560 · 1993 · External reference

New mode of IR detection using quantum wells

10.1063/1.95343 · 1984 · External reference

Application of internal photoemission from quantum well and heterojunction superlattices to infrared photodetectors

10.1016/0020-0891(83)90018-0 · 1993 · External reference

Internal photoemission form quantum well heterojunction superlattices by phononless free carrier absorption

10.1063/1.94345 · 1983 · External reference

First observation of an extremely large dipole infrared transition within the conduction band of a GaAs quantum well

10.1063/1.95742 · 1985 · External reference

10.1063/1.97928

10.1063/1.97928 · 1987 · External reference

10.1007/978-1-4615-3346-7_5

10.1007/978-1-4615-3346-7_5 · External reference

Unresolved reference

External reference

Unresolved reference

External reference

Unresolved reference

External reference

Unresolved reference

External reference

Glancing incidence X-ray characterization of materials

1993 · External reference

10.1016/s0022-0248(00)00625-4

10.1016/s0022-0248(00)00625-4 · External reference

Interface roughness and period variations in mqw structures determined by X-ray diffraction

10.1107/s0021889888006569 · 1988 · External reference

X-ray diffraction from multiple quantum well structures

1986 · External reference

10.1007/978-3-642-79678-4_6

10.1007/978-3-642-79678-4_6 · External reference

X-ray refractive index: a tool to determine the average composition in multilayer structures

10.1063/1.96749 · 1986 · External reference

Investigation of interfacial roughness of InxGa1−xAs epitaxial layers on GaAs and InP substrates by soft X-ray reflectivity

10.1063/1.347338 · 1991 · External reference

10.1002/pssa.2210510227

10.1002/pssa.2210510227 · 1979 · External reference

Determining period variations in a distributed Bragg reflector through high resolution X-ray analysis

10.1016/0022-0248(94)00863-9 · 1995 · External reference

10.1007/978-3-642-97098-6

10.1007/978-3-642-97098-6 · External reference

Precise computer control of the mbe process-application to graded InGaAlAs/InP alloys

10.1016/0022-0248(91)90946-3 · 1991 · External reference

Optical absorption at a heterojunction

1988 · External reference

Intraband photoconductivity of quantum well heterostructures

1986 · External reference

10.1007/978-1-4615-3346-7_30

10.1007/978-1-4615-3346-7_30 · External reference

Selection rules of intersubband transitions in conduction band quantum wells

10.1103/physrevb.50.7474 · 1994 · External reference

10.1117/12.271186

10.1117/12.271186 · External reference

Generalized superlattice k→·p→ theory and intersubband optical transitions

10.1103/physrevb.53.1963 · 1996 · External reference

Collective effects in the intersubband resonance of InAs/AlSb quantum wells

10.1006/spmi.1996.0040 · 1996 · External reference

Multiband coupling effects on electron quantum well intersubband transitions

10.1063/1.362829 · 1996 · External reference

Normal-incidence to intersub-band transitions

10.1049/ip-opt:19981813 · 1998 · External reference

On ‘forbidden’ interconduction-subband optical transitions in semiconductor quantum wells

1997 · External reference

Band structure of indium antimonide

10.1016/0022-3697(57)90013-6 · 1957 · External reference

Motion of electrons and holes in perturbed periodic fields

10.1103/physrev.97.869 · 1955 · External reference

Quantum theory of electrical transport phenomena

10.1103/physrev.108.590 · 1957 · External reference

Electronic properties of flat-band semiconductor heterostructures

10.1103/physrevlett.47.879 · 1981 · External reference

Theoretical investigations of superlattice band structure in the envelope-function approximation

10.1103/physrevb.25.7584 · 1982 · External reference

Simple calculations of confinement states in a quantum well

10.1103/physrevb.31.8041 · 1985 · External reference

Boundary conditions for envelope functions at interfaces between dissimilar materials

10.1103/physrevb.49.10533 · 1994 · External reference

Connection rules for envelope functions at semiconductor-heterostructure interfaces

10.1103/physrevb.47.10310 · 1993 · External reference

Connection of envelope functions at semiconductor heterointerfaces. I. Interface matrix calculated in simplest models

10.1103/physrevb.40.11609 · 1989 · External reference

Connection of envelope functions at semiconductor heterointerfaces. II. Mixings of Γ and x valleys in GaAs/AlxGa1−xAs

10.1103/physrevb.40.11619 · 1989 · External reference

Boundary conditions for envelope functions in heterostructures

10.1103/physrevb.46.4769 · 1992 · External reference

Unresolved reference

External reference

Conduction electrons in GaAs: five-level k→·p→ theory and polaron effects

10.1103/physrevb.41.1561 · 1990 · External reference

Relativistic band structure and spin-orbit splitting of zinc-blende type semiconductors

10.1103/physrevb.38.1806 · 1988 · External reference

Unresolved reference

External reference

10.1109/16.848272

10.1109/16.848272 · External reference

Electronic and intersubband optical properties of p-type GaAs/AlGaAs superlattices for infrared photodetectors

10.1063/1.359418 · 1995 · External reference

Saturation of intersubband transitions in p-type semiconductor quantum wells

10.1103/physrevb.39.12672 · 1989 · External reference

10.1117/12.271183

10.1117/12.271183 · External reference

10.1007/978-94-011-1144-7_3

10.1007/978-94-011-1144-7_3 · External reference

A metal grating coupled bound-to-miniband transition GaAs multiquantum well/superlattice infrared detector

10.1063/1.105491 · 1991 · External reference

10.1063/1.106484

10.1063/1.106484 · 1992 · External reference

Novel differentially strained p-doped quantum well infrared detector

10.1016/0020-0891(93)90004-q · 1993 · External reference

Infrared absorption enhancement in light and heavy hole inverted Ga1−xInxAs/Al1−yInyAs quantum wells

10.1063/1.105645 · 1991 · External reference

Quantum well intersubband transition physics and devices

10.1063/1.351015 · 1992 · External reference

Valence band engineering in strained-layer structures

10.1088/0268-1242/4/3/001 · 1989 · External reference

Effect of deformation on the hole energy spectrum of germanium and silicon

1959 · External reference

Hole subbands in strained quantum-well semiconductors in [h h k] directions

10.1103/physrevb.52.11132 · 1995 · External reference

Hole subbands in strained GaAs-Ga1−xAlxAs quantum wells: exact solution of the effective-mass equation

10.1103/physrevb.36.5887 · 1987 · External reference

Effect of deformation on the conduction band of III–V semiconductors

10.1103/physrevb.16.3688 · 1977 · External reference

Electronic structure of superlattices and quantum wells under uniaxial stress

10.1103/physrevb.36.6591 · 1987 · External reference

Cyclotron resonance experiments in uniaxially stressed silicon: valence band inverse mass parameters and deformation potentials

10.1103/physrev.129.1041 · 1963 · External reference

Electron intersubband normal incidence absorption in InGaAs/GaAs quantum wells

10.1116/1.586740 · 1993 · External reference

Unresolved reference

External reference

10.1109/drc.1995.496296

10.1109/drc.1995.496296 · External reference

Normal incident InGaAs/GaAs multiple quantum well infrared detector using electron intersubband transitions

10.1063/1.115144 · 1995 · External reference

Unresolved reference

External reference

Normal incidence photoresponse in GaAs/AlGaAs quantum-well infrared photodetector

10.1063/1.114698 · 1995 · External reference

Photoconductive gain mechanism of quantum well intersubband infrared detectors

10.1063/1.107286 · 1992 · External reference

Unresolved reference

External reference

Photoexcited coherent tunneling in a double-barrier superlattice

10.1103/physrevlett.59.2459 · 1987 · External reference

Multiple quantum well 10 μm GaAs/AlxGa1−xAs infrared detector with improved responsivity

10.1063/1.97706 · 1987 · External reference

Control of electric field domain formation in multiquantum well structures

10.1063/1.109793 · 1993 · External reference

Unresolved reference

External reference

Quantum interference effects and electric field domain formation in quantum well infrared photodetectors

10.1063/1.113739 · 1995 · External reference

Analysis of the dark current in doped well multiple quantum well AlGaAs infrared photodetectors

10.1063/1.343630 · 1989 · External reference

Unresolved reference

External reference

Admittance spectroscopy measurement of band offset in GaAs-GaAlAs multiquantum well

10.1063/1.347102 · 1990 · External reference

Admittance spectroscopy measurement of band offsets in strained layers of InxGa1−xAs grown on InP

10.1063/1.100878 · 1988 · External reference

Excess tunnel currents in AlGaAs/GaAs multiple quantum well infrared detectors

10.1063/1.107331 · 1992 · External reference

Direct determination of the electron tunneling escape time from a GaAs/AlxGa1−xAs quantum well by transient-capacitance spectroscopy

10.1103/physrevb.44.3157 · 1991 · External reference

Unresolved reference

1986 · External reference

Emission and capture of electrons in multiquantum well structures

10.1109/3.362722 · 1994 · External reference

High sensitivity low dark current 10 μm GaAs quantum well infrared photodetectors

10.1063/1.102682 · 1990 · External reference

10.1007/978-94-011-1144-7_5

10.1007/978-94-011-1144-7_5 · External reference

Unresolved reference

External reference

Contact and distributed effects in quantum well infrared photodetectors

10.1063/1.114862 · 1995 · External reference

Unresolved reference

External reference

10.1117/12.271210

10.1117/12.271210 · External reference

A self consistent model for quantum well infrared photodetectors

10.1063/1.362712 · 1996 · External reference

Injection mechanism at contacts in a quantum well intersubband infrared detector

10.1063/1.107887 · 1992 · External reference

10.1063/1.354789

10.1063/1.354789 · 1993 · External reference

10.1063/1.349602

10.1063/1.349602 · 1991 · External reference

Physical model of depletion and accumulation in quantum well infrared photodetectors

10.1109/3.798091 · 1999 · External reference

Photocapacitance spectroscopy of GaAs/AlGaAs multiquantum wells

10.1063/1.102186 · 1989 · External reference

Enhanced quantum well infrared photodetector with novel multiple quantum well grating structure

10.1063/1.116344 · 1996 · External reference

10.1117/12.271211

10.1117/12.271211 · External reference

GaAs/AlGaAs quantum well infrared photoconductors versus hgcdte photodiodes for long wavelength infrared applications

10.1117/12.165819 · 1994 · External reference

10.1063/1.354115

10.1063/1.354115 · 1993 · External reference

Space-charge limited current and capacitance in double junction diodes

10.1063/1.338165 · 1987 · External reference