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References from Comprehensive characterization of hydride VPE grown GaN layers and templates. Local targets link to admitted publications; unresolved targets remain external evidence.
10.1007/978-3-642-58562-3
10.1007/978-3-642-58562-3 · External reference
Progress and prospects of Group III–V nitride semiconductors
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Emerging GaN-based devices
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A review of large bandgap SiC, III–V nitrides, and ZnSe-based II–VI semiconductor structures and devices
10.1063/1.358463 · 1994 · External reference
GaN, AlN, and InN: a review
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Growth and applications of Group III-nitrides
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GaN: processing, defects, and devices
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Epitaxial growth and piezoelectric properties of AlN, GaN, and GaAs on sapphire or spinel
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Semiconductor ultraviolet detectors
10.1063/1.362677 · 1996 · External reference
Ultraviolet photodetectors based on GaN p–I–n and AlGaN(p)–GaN(i)–GaN(n) structures
10.1063/1.119366 · 1997 · External reference
AlN–GaN quarter-wave reflector stack grown by gas-source MBE on (1 0 0) GaAs
10.1049/el:19950020 · 1995 · External reference
Candela-class high-brightness InGaN/AlGaN double-heterostructure blue light-emitting diodes
10.1063/1.111832 · 1994 · External reference
High luminosity gallium nitride blue and blue-green light emitting diodes
1995 · External reference
10.1007/978-3-642-58562-3_11
10.1007/978-3-642-58562-3_11 · External reference
InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices
1997 · External reference
Wurtzite GaN-based heterostructures by molecular beam epitaxy
10.1109/2944.704115 · 1998 · External reference
Unresolved reference
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Exact electron momentum-relaxation times in GaN associated with scattering by polar-optical phonons
10.1063/1.368584 · 1998 · External reference
Monte Carlo calculation of velocity-field characteristics of wurtzite GaN
10.1063/1.365963 · 1997 · External reference
10.1063/1.360405
10.1063/1.360405 · 1995 · External reference
10.1016/s0080-8784(08)62850-1
10.1016/s0080-8784(08)62850-1 · External reference
High power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
10.1109/55.753753 · 1999 · External reference
High Al-content AlGaN/GaN MODFETs for ultrahigh performance
10.1109/55.658600 · 1998 · External reference
DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates
10.1109/55.658603 · 1998 · External reference
High-power 10 GHz operation of AlGaN HFETs on insulating SiC
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AlGaN/GaN HEMTs grown on SiC substrates
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Unresolved reference
External reference
Microwave performance of a quarter micron gate low noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistor
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Growth of gallium nitride by hydride vapor-phase epitaxy
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Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxym
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10.1063/1.121274 · 1998 · External reference
10.1063/1.369044
10.1063/1.369044 · 1998 · External reference
Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy
10.1063/1.1322370 · 2000 · External reference
High-mobility AlGaN/GaN heterostructures grown by molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy
10.1063/1.1323856 · 2000 · External reference
10.1557/s1092578300000077
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10.4028/www.scientific.net/msf.264-268.421
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10.1016/s0022-0248(97)00075-4
10.1016/s0022-0248(97)00075-4 · 1997 · External reference
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10.1063/1.124153
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10.1063/1.1329330 · 2000 · External reference
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10.1063/1.1330563
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Electrical, structural, and optical characterization of free-standing GaN template grown by hydride vapor phase epitaxy
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10.1016/s0038-1101(01)00088-0 · External reference
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Low resistance Ohmic contacts on wide bandgap GaN
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Identification of the Γ5 and Γ6 free excitons in GaN
10.1063/1.1322054 · 2000 · External reference
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10.1063/1.371566 · 1999 · External reference
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10.1557/proc-680-e5.4
10.1557/proc-680-e5.4 · External reference
Identification of the Γ5 and Γ6 free excitons in GaN
10.1063/1.1322054 · 2000 · External reference
10.1103/physrev.122.35
10.1103/physrev.122.35 · 1961 · External reference
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10.1103/physrevb.51.13326 · 1995 · External reference
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10.1143/jjap.19.2395 · 1980 · External reference
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10.1007/3540095950_9 · External reference
10.1016/s0022-0248(97)00075-4
10.1016/s0022-0248(97)00075-4 · 1997 · External reference
Deep centers in n-GaN grown by reactive molecular beam epitaxy
10.1063/1.121274 · 1998 · External reference
Effect of ammonia flow rate on impurity incorporation and material properties of Si-doped GaN epitaxial films grown by reactive molecular beam epitaxy
10.1063/1.369044 · 1998 · External reference
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10.1063/1.331667 · 1982 · External reference
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Impurity contamination of GaN epitaxial films from sapphire, SiC, and ZnO substrates
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2000 · External reference
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10.1063/1.1289072 · 2000 · External reference
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10.1016/0022-3697(73)90092-9 · 1973 · External reference
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