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References from Organometallic vapor phase epitaxy (OMVPE). Local targets link to admitted publications; unresolved targets remain external evidence.
Metal-organic vapor phase epitaxy of compound semiconductors
10.1016/0920-2307(87)90002-8 · 1987 · External reference
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Metalorganic chemical vapor deposition of III–V semiconductors
10.1063/1.336296 · 1985 · External reference
10.1142/2774
10.1142/2774 · External reference
Fabrication and performance of selectively oxidized vertical-cavity lasers
10.1109/68.473457 · 1995 · External reference
10.1016/0022-0248(88)90144-3
10.1016/0022-0248(88)90144-3 · 1988 · External reference
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The Operation of Metalorganic Bubblers at Reduced Pressure
10.1116/1.576921 · 1990 · External reference
Monitoring of MOCVD Reactants by UV Absorption
10.1007/bf02676836 · 1995 · External reference
10.1016/s0022-328x(00)84567-2
10.1016/s0022-328x(00)84567-2 · 1971 · External reference
Minimal-data approaches for determining outer-layer dielectric responses of films from kinetic reflectometric and ellipsometric measurements
10.1364/josaa.10.000974 · 1993 · External reference
A virtual interface method for extracting growth rates and high temperature optical constants from thin semiconductor films using in situ normal incidence reflectance
10.1063/1.360496 · 1995 · External reference
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In situ pre-growth calibration using reflectance as control strategy for MOCVD fabrications of device structures
10.1016/s0022-0248(97)00020-1 · 1997 · External reference
Highly uniform and reproducible vertical-cavity surface emitting lasers grown by metalorganic vapor phase epitaxy with reflectometer
10.1109/68.536629 · 1996 · External reference
Uber Laminare und Turbulent Reibung
1921 · External reference
Mass transfer, flow, and heat transfer about a rotating disk
10.1115/1.3679937 · 1960 · External reference
Rotating disk flow and mass transfer
10.1115/1.3684328 · 1962 · External reference
Surface chemical kinetics and gas-phase diffusion in the Germanium–Iodine reaction
10.1021/i160022a004 · 1967 · External reference
Silicon deposition on a rotating disk
10.1149/1.2129743 · 1980 · External reference
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10.2172/6248912
10.2172/6248912 · External reference
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A numerical model of the flow and heat transfer in a rotating disk chemical vapor deposition reactor
10.1115/1.3248205 · 1987 · External reference
Effects of boundary conditions on the flow and heat transfer in a rotating disk chemical vapor deposition reactor
10.1080/10407788708913584 · 1987 · External reference
Design and verification of nearly ideal flow and heat transfer in a rotating disk chemical vapor deposition reactor
10.1149/1.2085878 · 1991 · External reference
Observation and analysis of epitaxial growth with reflectance-difference spectroscopy
10.1016/0921-5107(94)09005-x · 1995 · External reference
Arsenic dimers and multilayers on (001) GaAs surfaces in atomospheric pressure organometallic chemical vapor deposition
10.1063/1.107417 · 1992 · External reference
Structure of (001) GaAs surfaces during epitaxial growth by organometallic chemical vapor deposition
10.1063/1.110200 · 1993 · External reference
10.1016/0169-4332(96)00321-2
10.1016/0169-4332(96)00321-2 · External reference
Gallium arsenide surface reconstructions during organometallic vapor-phase epitaxy
10.1063/1.106924 · 1992 · External reference
Representative reflectance anisotropy spectra from AlxGa1−xAs layers (x=0–1.0) grown on GaAs (001) by molecular beam epitaxy
10.1063/1.113280 · 1995 · External reference
Reflectance anisotropy oscillations of the heteroepitaxial growth of AlAs and Al1−xGaxAs on GaAs (001) surfaces by molecular beam epitaxy
10.1016/s0039-6028(96)01294-0 · 1997 · External reference
Reflectance-difference spectroscopy of (001) GaAs surfaces in ultrahigh vacuum
10.1103/physrevb.46.15894 · 1992 · External reference
Surface reconstructions of GaAs (001) observed by scanning tunneling microscopy
10.1103/physrevb.41.5701 · 1990 · External reference
Semiconductor surface reconstruction: the structural chemistry of two-dimensional surface compounds
10.1021/cr950212s · 1996 · External reference
Monolayer growth oscillations and surface structure of gaAs (001) during metalorganic vapor phase epitaxy growth
10.1116/1.587798 · 1994 · External reference
Reflectance-difference spectroscopy of adsorbate covered GaAs (001) surfaces: a combined surface science and in situ OMVPE Study
10.1016/s0039-6028(98)00291-x · 1998 · External reference
Investigation of the relationship between reflectance difference spectroscopy and surface structure using grazing incidence X-ray scattering
10.1002/pssa.2211520102 · 1995 · External reference
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On the practical applications of MBE surface phase-diagrams
10.1016/0022-0248(87)90363-0 · 1987 · External reference
Surface reconstructions of GaAs (001) observed by scanning tunneling microscopy
10.1103/physrevb.41.5701 · 1990 · External reference
Semiconductor surface reconstruction: the structural chemistry of two-dimensional surface compounds
10.1021/cr950212s · 1996 · External reference
Gallium Arsenide surface reconstructions during organometallic vapor-phase epitaxy
10.1063/1.106924 · 1992 · External reference
Investigation of the relationship between reflectance difference spectroscopy and surface structure using grazing incidence X-ray scattering
10.1002/pssa.2211520102 · 1995 · External reference
Characterization of vapor phase growth using X-ray techniques
10.1016/0022-0248(94)00588-5 · 1995 · External reference
Reconstruction and defect structure of vicinal GaAs (001) and AlxGa1−x (001) surfaces during MBE growth
10.1016/0039-6028(90)90756-x · 1990 · External reference
Reflection high-Energy electron diffraction oscillations and anisotropy on vicinal AlAs (001) during molecular-beam epitaxy
10.1063/1.108618 · 1993 · External reference
A reaction-transport model of GaAs growth by metalorganic chemical vapor deposition using trimethylgallium and tertiary-butyl-arsine
10.1016/0022-0248(93)90178-y · 1993 · External reference
Gas-phase and surface reaction mechamisms in MCVOD of GaAs with trimethyl-gallium and arsine
10.1149/1.2085990 · 1991 · External reference
Kinetic limits of monolayer growth on (001) GaAs by organometallic CVD GaAs
10.1103/physrevlett.61.2782 · 1988 · External reference
The surface chemistry and kinetics of GaAs atomic layer epitaxy
10.1016/0040-6090(93)90120-e · 1993 · External reference
The pyrolysis of trimethylgallium
10.1139/v63-213 · 1964 · External reference
Calculation of unimolecular rate constants for common metalorganic vapor phase epitaxy precursors via RRKM theory
10.1016/0022-0248(90)90068-v · 1990 · External reference
IR diode laser probing of OMVPE kinetics
10.1016/0022-0248(88)90517-9 · 1988 · External reference
10.1557/proc-222-15
10.1557/proc-222-15 · 1991 · External reference
In situ measurements of the metalorganic and hydride partial pressures in a MOCVD reactor using Ultraviolet adsorption spectroscopy
10.1016/0022-0248(89)90144-9 · 1989 · External reference
10.1063/1.106510
10.1063/1.106510 · 1992 · External reference
Site-specific reaction-kinetics for Gallium–Arsenide metalorganic vapor-phase epitaxy
10.1063/1.118021 · 1996 · External reference
Formation of Super As-rich GaAs (001) surfaces by high temperature exposure to arsine
10.1063/1.106510 · 1992 · External reference
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Pyrolysis of trimethylgallium on GaAs (001) surfaces
10.1063/1.103224 · 1990 · External reference
Kinetics of the reaction between trimethylgallium and arsine
10.1016/0022-0248(90)90893-p · 1990 · External reference
Silicon doping of GaAs and AlxGa1−xAs using disilane in metalorganic chemical vapor deposition
10.1016/0022-0248(84)90396-8 · 1984 · External reference
Gas-phase and surface reactions in Si Doping of GaAs by Silanes
10.1016/0022-0248(88)90589-1 · 1988 · External reference
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Comprehensive analysis of Si-doped AlxGa1−xAs (x=0 to 1): theory and experiments
10.1103/physrevb.30.4481 · 1984 · External reference
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Carbon doping in metalorganic vapor phase epitaxy
10.1016/0022-0248(94)91080-4 · 1994 · External reference
Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy
10.1063/1.100008 · 1988 · External reference
Heavy carbon doping of metalorganic chemical vapor deposition grown GaAs using carbontetrachloride
10.1063/1.101237 · 1989 · External reference
Very high-carbon incorporation in metal organic vapor-phase epitaxy of heavily doped p-type GaAs
10.1063/1.104960 · 1991 · External reference
10.1063/1.357219
10.1063/1.357219 · 1994 · External reference
Carbon doping and growth-rate reduction by CCl4 during metalorganic chemical–vapor deposition of GaAs
10.1063/1.357219 · 1994 · External reference
Carbon doping and etching of AlxGa1−xAs (0<x<1) with carbon tetrachloride in metalorganic vapor phase epitaxy
10.1063/1.119245 · 1997 · External reference
Chemical dry-etching of GaAs (100) by HCL: products, rate and a kinetic-model
10.1016/0039-6028(94)90816-8 · 1994 · External reference
Metalorganic precursors for vapor phase epitaxy
10.1016/0022-0248(93)90509-u · 1993 · External reference
Simulation of carbon doping of GaAs during MOVPE
10.1016/0022-0248(92)90504-c · 1992 · External reference
Mechanism of carbon incorporation during GaAs epitaxy
10.1116/1.578320 · 1993 · External reference
Evidence for a surface methylene species in the decomposition of trimethylgallium on GaAs (100)-(4×1): a high-resolution electron energy loss spectroscopy study
10.1016/0039-6028(94)00826-4 · 1995 · External reference
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Quantitative oxygen measurements in OMVPE ALXGA1-XAS grown by methyl precursors
10.1007/bf02660464 · 1992 · External reference
Growth study of AlGaAs using dimethylethylamine alane as the aluminum precursor
10.1007/s11664-997-0016-9 · 1997 · External reference
