Research graph
References from MOCVD Growth of (011) β-Ga2O3 Films: Defect Control and Device Implication. Local targets link to admitted publications; unresolved targets remain external evidence.
Structural and Electronic Properties of Ga2O3-Al2O3 Alloys
10.1063/1.5036991 · 2018 · External reference
Optical Absorption and Photoconductivity in the Band Edge of β-Ga2O3
10.1103/physrev.140.a316 · 1965 · External reference
Halide Vapor Phase Epitaxy of Si Doped β-Ga2O3 and Its Electrical Properties
10.1016/j.tsf.2018.09.006 · 2018 · External reference
MOCVD Grown Epitaxial β -Ga 2 O 3 Thin Film with an Electron Mobility of 176 Cm 2/V s at Room Temperature
10.1063/1.5058059 · 2019 · External reference
First-Principles Calculations of Structural, Electrical, and Optical Properties of Ultra-Wide Bandgap (Al x Ga 1-x) 2 O 3 Alloys
10.1557/s43578-021-00371-7 · 2021 · External reference
High-Quality β-Ga2O3 Single Crystals Grown by Edge-Defined Film-Fed Growth
10.7567/jjap.55.1202a2 · 2016 · External reference
Growth of Bulk β-Ga2O3single Crystals by the Czochralski Method
10.1063/5.0076962 · 2022 · External reference
A Critical Review of Comparative Global Historical Energy Consumption and Future Demand: The Story Told so Far
10.1016/j.egyr.2020.07.020 · 2020 · External reference
β-Ga2O3 Lateral High-Permittivity Dielectric Superjunction Schottky Barrier Diode With 1.34 GW/cm2 Power Figure of Merit
10.1109/led.2022.3216302 · 2022 · External reference
First Demonstration of Ga2O3 Trench MOS-Type Schottky Barrier Diodes
10.1109/led.2017.2696986 · 2017 · External reference
6 KV/3.4 MΩ·cm2 Vertical β-Ga2O3Schottky Barrier Diode With BV2/Ron,SpPerformance Exceeding 1-D Unipolar Limit of GaN and SiC
10.1109/led.2022.3160366 · 2022 · External reference
Orientation-Dependent β-Ga2O3 Heterojunction Diode with Atomic Layer Deposition (ALD) Grown NiO
10.1063/5.0285622 · 2025 · External reference
E-Mode Vertical β-Ga2O3 (010) U-Trench MOSFETs With In-Situ Mg-Doped Current Blocking Layers
10.1109/led.2025.3554401 · 2025 · External reference
Dopants in β-Ga2O3: From Theory to Experiments
10.1063/9780735425033_006 · 2023 · External reference
Effect of Substrate Orientation on Homoepitaxial Growth of β -Ga2O3by Halide Vapor Phase Epitaxy
10.1063/5.0087609 · 2022 · External reference
Halide Vapor Phase Epitaxial Growth of β -Ga 2 O 3 and α -Ga 2 O 3 Films
10.1063/1.5055680 · 2019 · External reference
Characterization of Crystalline Defects in β-Ga2O3 Single Crystals Grown by Edge-Defined Film-Fed Growth and Halide Vapor-Phase Epitaxy Using Synchrotron X-Ray Topography
10.7567/1347-4065/ab0dba · 2019 · External reference
MOCVD Growth of β-Ga2O3 with Fast Growth Rates (>4.3 Μm/h), Low Controllable Doping, and Superior Transport Properties
10.1063/5.0238094 · 2024 · External reference
High-Mobility MOCVD β-Ga2O3Epitaxy with Fast Growth Rate Using Trimethylgallium
10.1021/acs.cgd.2c00290 · 2022 · External reference
MOCVD Growth of (010) β-(AlxGa1−x)2O3 Thin Films
10.1557/s43578-021-00354-8 · 2021 · External reference
Metalorganic Chemical Vapor Deposition Epitaxy of β-Ga2O3 Films on (001) Ga2O3 Substrates with Fast Growth Rates
10.1116/6.0004575 · 2025 · External reference
MOCVD Growth of β-Ga2O3 on (001) Ga2O3 Substrates
10.1021/acs.cgd.4c00060 · 2024 · External reference
High Growth Rate Metal Organic Chemical Vapor Deposition Grown Ga2O3 (010) Schottky Diodes
10.1116/6.0003533 · 2024 · External reference
Metalorganic Chemical Vapor Deposition of (011) β-Ga2O3 Films with 20 Μm Drift Layer
2026 · External reference
Metalorganic Chemical Vapor Deposition of β-(Al)Ga2O3 on (001) β-Ga2O3 Substrates
10.1116/6.0005408 · 2026 · External reference
MOCVD Growth of Thick β-(Al)GaO Films with Fast Growth Rates
10.1021/acs.cgd.3c00779 · 2023 · External reference
Metalorganic Chemical Vapor Deposition of β-(AlxGa1-x)2O3thin Films on (001) β-Ga2O3substrates
10.1063/5.0142746 · 2023 · External reference
MOCVD Epitaxy of Ultrawide Bandgap β-(AlxGa1- x)2O3with High-Al Composition on (100) β-Ga2O3Substrates
10.1021/acs.cgd.0c00864 · 2020 · External reference
Effects of High-Temperature Annealing on Electrical Properties of Si-Doped β-Ga2O3 Thin Films Grown by Low-Pressure Hot-Wall MOCVD
10.1063/5.0292471 · 2025 · External reference
A Multi-Fin Normally-off β-Ga2O3 Vertical Transistor with a Breakdown Voltage Exceeding 10 KV
10.35848/1882-0786/ae0d2a · 2025 · External reference
Rapid Homoepitaxial Growth of (011) β-Ga2O3 by HCl-Based Halide Vapor Phase Epitaxy
10.1080/14686996.2025.2585551 · 2025 · External reference
Enhancing the Electron Mobility in Si-Doped (010) β-Ga2O3films with Low-Temperature Buffer Layers
10.1063/5.0137666 · 2023 · External reference
Enhancement of Gallium Nitride on Silicon (111) Using Pulse Atomic-Layer Epitaxy (PALE) AlN with Composition-Graded AlGaN Buffer
10.1038/s41598-023-35677-5 · 2023 · External reference
Influence of O2 Pulse on the β-Ga2O3 Films Deposited by Pulsed MOCVD
10.1016/j.ceramint.2021.12.031 · 2022 · External reference
High-Quality AlN Grown with a Single Substrate Temperature below 1200 °C
10.1038/s41598-017-07616-8 · 2017 · External reference
Step-Flow Growth in Homoepitaxy of β -Ga 2 O 3 (100) - The Influence of the Miscut Direction and Faceting
10.1063/1.5054943 · 2019 · External reference
Evaluation of Surface Preparation Methods for Epitaxial Growth on Miscut (100) β-Ga2O3 Substrates
10.1016/j.apsusc.2026.167611 · 2026 · External reference
High-Temperature Annealing of (-201) β-Ga2O3 Substrates for Reducing Structural Defects after Diamond Sawing
10.1088/1674-4926/44/12/122801 · 2023 · External reference
Application of X-Rays Diffraction for Identifying Thin Oxide Surface Layers on Zinc Coatings
10.3390/coatings10101005 · 2020 · External reference
Evaluation of Surface Preparation Methods for Epitaxial Growth on Miscut (100) β-Ga2O3 Substrates
10.1016/j.apsusc.2026.167611 · ExternalCitation · doi-reference
Influence of O2 Pulse on the β-Ga2O3 Films Deposited by Pulsed MOCVD
10.1016/j.ceramint.2021.12.031 · ExternalCitation · doi-reference
A Critical Review of Comparative Global Historical Energy Consumption and Future Demand: The Story Told so Far
10.1016/j.egyr.2020.07.020 · ExternalCitation · doi-reference
Halide Vapor Phase Epitaxy of Si Doped β-Ga2O3 and Its Electrical Properties
10.1016/j.tsf.2018.09.006 · ExternalCitation · doi-reference
MOCVD Epitaxy of Ultrawide Bandgap β-(AlxGa1- x)2O3with High-Al Composition on (100) β-Ga2O3Substrates
10.1021/acs.cgd.0c00864 · ExternalCitation · doi-reference
High-Mobility MOCVD β-Ga2O3Epitaxy with Fast Growth Rate Using Trimethylgallium
10.1021/acs.cgd.2c00290 · ExternalCitation · doi-reference
MOCVD Growth of Thick β-(Al)GaO Films with Fast Growth Rates
10.1021/acs.cgd.3c00779 · ExternalCitation · doi-reference
MOCVD Growth of β-Ga2O3 on (001) Ga2O3 Substrates
10.1021/acs.cgd.4c00060 · ExternalCitation · doi-reference
High-Quality AlN Grown with a Single Substrate Temperature below 1200 °C
10.1038/s41598-017-07616-8 · ExternalCitation · doi-reference
Enhancement of Gallium Nitride on Silicon (111) Using Pulse Atomic-Layer Epitaxy (PALE) AlN with Composition-Graded AlGaN Buffer
10.1038/s41598-023-35677-5 · ExternalCitation · doi-reference
Structural and Electronic Properties of Ga2O3-Al2O3 Alloys
10.1063/1.5036991 · ExternalCitation · doi-reference
Step-Flow Growth in Homoepitaxy of β -Ga 2 O 3 (100) - The Influence of the Miscut Direction and Faceting
10.1063/1.5054943 · ExternalCitation · doi-reference
Halide Vapor Phase Epitaxial Growth of β -Ga 2 O 3 and α -Ga 2 O 3 Films
10.1063/1.5055680 · ExternalCitation · doi-reference
MOCVD Grown Epitaxial β -Ga 2 O 3 Thin Film with an Electron Mobility of 176 Cm 2/V s at Room Temperature
10.1063/1.5058059 · ExternalCitation · doi-reference
Growth of Bulk β-Ga2O3single Crystals by the Czochralski Method
10.1063/5.0076962 · ExternalCitation · doi-reference
Effect of Substrate Orientation on Homoepitaxial Growth of β -Ga2O3by Halide Vapor Phase Epitaxy
10.1063/5.0087609 · ExternalCitation · doi-reference
Enhancing the Electron Mobility in Si-Doped (010) β-Ga2O3films with Low-Temperature Buffer Layers
10.1063/5.0137666 · ExternalCitation · doi-reference
Metalorganic Chemical Vapor Deposition of β-(AlxGa1-x)2O3thin Films on (001) β-Ga2O3substrates
10.1063/5.0142746 · ExternalCitation · doi-reference
MOCVD Growth of β-Ga2O3 with Fast Growth Rates (>4.3 Μm/h), Low Controllable Doping, and Superior Transport Properties
10.1063/5.0238094 · ExternalCitation · doi-reference
Orientation-Dependent β-Ga2O3 Heterojunction Diode with Atomic Layer Deposition (ALD) Grown NiO
10.1063/5.0285622 · ExternalCitation · doi-reference
Effects of High-Temperature Annealing on Electrical Properties of Si-Doped β-Ga2O3 Thin Films Grown by Low-Pressure Hot-Wall MOCVD
10.1063/5.0292471 · ExternalCitation · doi-reference
Dopants in β-Ga2O3: From Theory to Experiments
10.1063/9780735425033_006 · ExternalCitation · doi-reference
Rapid Homoepitaxial Growth of (011) β-Ga2O3 by HCl-Based Halide Vapor Phase Epitaxy
10.1080/14686996.2025.2585551 · ExternalCitation · doi-reference
High-Temperature Annealing of (-201) β-Ga2O3 Substrates for Reducing Structural Defects after Diamond Sawing
10.1088/1674-4926/44/12/122801 · ExternalCitation · doi-reference
Optical Absorption and Photoconductivity in the Band Edge of β-Ga2O3
10.1103/physrev.140.a316 · ExternalCitation · doi-reference
First Demonstration of Ga2O3 Trench MOS-Type Schottky Barrier Diodes
10.1109/led.2017.2696986 · ExternalCitation · doi-reference
6 KV/3.4 MΩ·cm2 Vertical β-Ga2O3Schottky Barrier Diode With BV2/Ron,SpPerformance Exceeding 1-D Unipolar Limit of GaN and SiC
10.1109/led.2022.3160366 · ExternalCitation · doi-reference
β-Ga2O3 Lateral High-Permittivity Dielectric Superjunction Schottky Barrier Diode With 1.34 GW/cm2 Power Figure of Merit
10.1109/led.2022.3216302 · ExternalCitation · doi-reference
E-Mode Vertical β-Ga2O3 (010) U-Trench MOSFETs With In-Situ Mg-Doped Current Blocking Layers
10.1109/led.2025.3554401 · ExternalCitation · doi-reference
High Growth Rate Metal Organic Chemical Vapor Deposition Grown Ga2O3 (010) Schottky Diodes
10.1116/6.0003533 · ExternalCitation · doi-reference
Metalorganic Chemical Vapor Deposition Epitaxy of β-Ga2O3 Films on (001) Ga2O3 Substrates with Fast Growth Rates
10.1116/6.0004575 · ExternalCitation · doi-reference
Metalorganic Chemical Vapor Deposition of β-(Al)Ga2O3 on (001) β-Ga2O3 Substrates
10.1116/6.0005408 · ExternalCitation · doi-reference
MOCVD Growth of (010) β-(AlxGa1−x)2O3 Thin Films
10.1557/s43578-021-00354-8 · ExternalCitation · doi-reference
First-Principles Calculations of Structural, Electrical, and Optical Properties of Ultra-Wide Bandgap (Al x Ga 1-x) 2 O 3 Alloys
10.1557/s43578-021-00371-7 · ExternalCitation · doi-reference
Application of X-Rays Diffraction for Identifying Thin Oxide Surface Layers on Zinc Coatings
10.3390/coatings10101005 · ExternalCitation · doi-reference
A Multi-Fin Normally-off β-Ga2O3 Vertical Transistor with a Breakdown Voltage Exceeding 10 KV
10.35848/1882-0786/ae0d2a · ExternalCitation · doi-reference
Characterization of Crystalline Defects in β-Ga2O3 Single Crystals Grown by Edge-Defined Film-Fed Growth and Halide Vapor-Phase Epitaxy Using Synchrotron X-Ray Topography
10.7567/1347-4065/ab0dba · ExternalCitation · doi-reference
High-Quality β-Ga2O3 Single Crystals Grown by Edge-Defined Film-Fed Growth
10.7567/jjap.55.1202a2 · ExternalCitation · doi-reference
