Research graph
References from Self-Aligned AlO <i>x</i> Spacer Enabling 10 nm-Scaled InZnSnO Thin-Film Transistors for 2T0C DRAM. Local targets link to admitted publications; unresolved targets remain external evidence.
Room-Temperature Fabrication of Transparent Flexible Thin-Film Transistors Using Amorphous Oxide Semiconductors
10.1038/nature03090 · 2004 · External reference
Progress, Challenges, and Opportunities in Oxide Semiconductor Devices: A Key Building Block for Applications Ranging from Display Backplanes to 3D Integrated Semiconductor Chips
10.1002/adma.202204663 · 2023 · External reference
Enhanced Stability and Mobility of Solution-Processed Oxide Thin-Film Transistors with Bilayer Terbium-Incorporated Indium Oxide Channel
10.1063/5.0098765 · 2022 · External reference
Highly Stable InZnSnTbOX Thin-Film Transistors
10.1063/5.0255013 · 2025 · External reference
Present Status of Amorphous In–Ga–Zn–O Thin-Film Transistors
10.1088/1468-6996/11/4/044305 · 2010 · External reference
Recent Progress in InGaZnO FETs for High-Density 2T0C DRAM Applications
10.1007/s11432-023-3802-8 · 2023 · External reference
Oxide Semiconductor for Advanced Memory Architectures: Atomic Layer Deposition, Key Requirement and Challenges
10.1007/s40820-025-02013-7 · 2026 · External reference
Unlocking the Performance Limits of 2T0C DRAM with Ω-Shaped-Gated Single-Crystal In2O3 FETs
10.1126/sciadv.aec3934 · 2026 · External reference
Enhancing Gate Control and Mitigating Short Channel Effects in 20–50 Nm Channel Length Amorphous Oxide Thin-Film Transistors
10.1021/acsnano.5c10260 · 2025 · External reference
Influence of Reduction in Effective Channel Length on Device Operations of In-Ga-Zn-O Thin-Film Transistors with Variations in Channel Compositions
10.1109/ted.2021.3117188 · 2021 · External reference
Downscaling Challenges in IGZO Transistors: A Study on Threshold Voltage Roll-up and Roll-off Effects
10.1088/1674-4926/24120005 · 2025 · External reference
Improvement in Short-Channel Effects of the Thin-Film Transistors Using Atomic-Layer Deposited In–Ga–Sn–O Channels with Various Channel Compositions
10.1109/ted.2022.3198032 · 2020 · External reference
Review─Extremely Thin Amorphous Indium Oxide Transistors
10.1002/adma.202304044 · 2024 · External reference
Nanometre-Thin Indium Tin Oxide for Advanced High-Performance Electronics
10.1038/s41563-019-0455-8 · 2019 · External reference
10-Nm Channel Length Indium-Tin-Oxide Transistors with I on = 1860 μA/μm, G m = 1050 μS/μm at V ds = 1 V with BEOL Compatibility
10.1109/iedm13553.2020.9371966 · 2020 · External reference
Ultrashort 15-Nm Flexible Radio Frequency ITO Transistors Enduring Mechanical and Temperature Stress
10.1126/sciadv.ade4075 · 2022 · External reference
Scaled Indium Oxide Transistors Fabricated Using Atomic Layer Deposition
10.1038/s41928-022-00718-w · 2022 · External reference
Vertically Stacked Multilayer Atomic-Layer-Deposited Sub-1-Nm In2O3 Field-Effect Transistors with Back-End-of-Line Compatibility
10.1063/5.0092936 · 2022 · External reference
Why In 2 O 3 Can Make 0.7 Nm Atomic Layer Thin Transistors
10.1021/acs.nanolett.0c03967 · 2021 · External reference
Oxygen Defects and Instability in Very Thin a-IGZO TFTs
10.1002/aelm.202500349 · 2025 · External reference
High-Stability Ultrathin Oxide Transistors via Defect Engineering for High-Performance Capacitorless DRAM
10.1002/adfm.202514194 · 2026 · External reference
Oxygen-Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute-In-Memory Systems
10.1002/adfm.202531989 · 2026 · External reference
Sub-15-Nm Patterning of Asymmetric Metal Electrodes and Devices by Adhesion Lithography
10.1038/ncomms4933 · 2014 · External reference
Downscaling Metal─Oxide Thin-Film Transistors to Sub-50 Nm in an Exquisite Film-Profile Engineering Approach
10.1109/ted.2016.2646221 · 2017 · External reference
High Mobility IZTO Thin-Film Transistors Based on Spinel Phase Formation at Low Temperature through a Catalytic Chemical Reaction
10.1002/smtd.202370036 · 2023 · External reference
The Effect of Charge Transfer Transition on the Photostability of Lanthanide-Doped Indium Oxide Thin-Film Transistors
10.1038/s43246-021-00193-4 · 2021 · External reference
Solution-Processed Yttrium-Doped IZTO Semiconductors for High-Stability Thin Film Transistor Applications
10.1109/ted.2019.2949702 · 2019 · External reference
Addressing the Conflict between Mobility and Stability in Oxide Thin-film Transistors
10.1002/advs.202300373 · 2023 · External reference
Effect of Humidity on Properties of Aqueous-Processed Tb-Doped Indium Oxide Thin-Film Transistors
10.1109/led.2022.3204831 · 2022 · External reference
First-Principles Study on Water and Oxygen Adsorption on Surfaces of Indium Oxide and Indium Tin Oxide Nanoparticles
10.1021/jp801229g · 2008 · External reference
Material Characteristics and Applications of Transparent Amorphous Oxide Semiconductors
10.1038/asiamat.2010.5 · 2010 · External reference
Device Modeling of Two-Steps Oxygen Anneal-Based Submicron InGaZnO Back-End-of-Line Field-Effect Transistor Enabling Short-Channel Effects Suppression
10.1038/s41598-022-23951-x · 2022 · External reference
Single-crystalline metal-oxide dielectrics for top-gate 2D transistors
10.1038/s41586-024-07786-2 · 2024 · External reference
Surface Potential Measurement on Contact Resistance of Amorphous-InGaZnO Thin Film Transistors by Kelvin Probe Force Microscopy
10.1063/1.4958332 · 2016 · External reference
Surface Potential Profiling and Contact Resistance Measurements on Operating Pentacene Thin-Film Transistors by Kelvin Probe Force Microscopy
10.1063/1.1637443 · 2003 · External reference
Critical Invisible Defect Detection System of Thin Film Transistor Panels Using Kelvin Probe Force Microscopy
10.1016/j.apsusc.2016.03.069 · 2016 · External reference
Gallium–Indium–Zinc-Oxide-Based Thin-Film Transistors: Influence of the Source/Drain Material
10.1109/ted.2008.916717 · 2008 · External reference
Scanning Kelvin Probe Microscopy Study on Oxide Thin Film Transistor
10.1149/05008.0209ecst · 2013 · External reference
Effect of Channel-Width Widening on a Poly-Si Thin-Film Transistor Structure in the Linear Region
10.1109/ted.2007.902853 · 2007 · External reference
Mobility Overestimation in Thin-Film Transistors: Effects of Device Geometry and Fringe Currents
10.1021/acsnano.5c11904 · 2025 · External reference
Fringe Current Correction for Unpatterned-Channel Thin-Film Transistors Including Contact Resistance and Velocity Saturation Effects
10.1063/5.0266349 · 2025 · External reference
Effect of Self-Assembled Monolayers (SAMs) as Surface Passivation on the Flexible a-InSnZnO Thin-Film Transistors
10.1109/ted.2020.3004420 · 2020 · External reference
Amorphous Gallium Indium Zinc Oxide Thin Film Transistors: Sensitive to Oxygen Molecules
10.1063/1.2723543 · 2007 · External reference
High-Stability Ultrathin Oxide Transistors via Defect Engineering for High-Performance Capacitorless DRAM
10.1002/adfm.202514194 · ExternalCitation · doi-reference
Oxygen-Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute-In-Memory Systems
10.1002/adfm.202531989 · ExternalCitation · doi-reference
Progress, Challenges, and Opportunities in Oxide Semiconductor Devices: A Key Building Block for Applications Ranging from Display Backplanes to 3D Integrated Semiconductor Chips
10.1002/adma.202204663 · ExternalCitation · doi-reference
Review─Extremely Thin Amorphous Indium Oxide Transistors
10.1002/adma.202304044 · ExternalCitation · doi-reference
Addressing the Conflict between Mobility and Stability in Oxide Thin-film Transistors
10.1002/advs.202300373 · ExternalCitation · doi-reference
Oxygen Defects and Instability in Very Thin a-IGZO TFTs
10.1002/aelm.202500349 · ExternalCitation · doi-reference
High Mobility IZTO Thin-Film Transistors Based on Spinel Phase Formation at Low Temperature through a Catalytic Chemical Reaction
10.1002/smtd.202370036 · ExternalCitation · doi-reference
Recent Progress in InGaZnO FETs for High-Density 2T0C DRAM Applications
10.1007/s11432-023-3802-8 · ExternalCitation · doi-reference
Oxide Semiconductor for Advanced Memory Architectures: Atomic Layer Deposition, Key Requirement and Challenges
10.1007/s40820-025-02013-7 · ExternalCitation · doi-reference
Critical Invisible Defect Detection System of Thin Film Transistor Panels Using Kelvin Probe Force Microscopy
10.1016/j.apsusc.2016.03.069 · ExternalCitation · doi-reference
Why In 2 O 3 Can Make 0.7 Nm Atomic Layer Thin Transistors
10.1021/acs.nanolett.0c03967 · ExternalCitation · doi-reference
Enhancing Gate Control and Mitigating Short Channel Effects in 20–50 Nm Channel Length Amorphous Oxide Thin-Film Transistors
10.1021/acsnano.5c10260 · ExternalCitation · doi-reference
Mobility Overestimation in Thin-Film Transistors: Effects of Device Geometry and Fringe Currents
10.1021/acsnano.5c11904 · ExternalCitation · doi-reference
First-Principles Study on Water and Oxygen Adsorption on Surfaces of Indium Oxide and Indium Tin Oxide Nanoparticles
10.1021/jp801229g · ExternalCitation · doi-reference
Material Characteristics and Applications of Transparent Amorphous Oxide Semiconductors
10.1038/asiamat.2010.5 · ExternalCitation · doi-reference
Room-Temperature Fabrication of Transparent Flexible Thin-Film Transistors Using Amorphous Oxide Semiconductors
10.1038/nature03090 · ExternalCitation · doi-reference
Sub-15-Nm Patterning of Asymmetric Metal Electrodes and Devices by Adhesion Lithography
10.1038/ncomms4933 · ExternalCitation · doi-reference
Nanometre-Thin Indium Tin Oxide for Advanced High-Performance Electronics
10.1038/s41563-019-0455-8 · ExternalCitation · doi-reference
Single-crystalline metal-oxide dielectrics for top-gate 2D transistors
10.1038/s41586-024-07786-2 · ExternalCitation · doi-reference
Device Modeling of Two-Steps Oxygen Anneal-Based Submicron InGaZnO Back-End-of-Line Field-Effect Transistor Enabling Short-Channel Effects Suppression
10.1038/s41598-022-23951-x · ExternalCitation · doi-reference
Scaled Indium Oxide Transistors Fabricated Using Atomic Layer Deposition
10.1038/s41928-022-00718-w · ExternalCitation · doi-reference
The Effect of Charge Transfer Transition on the Photostability of Lanthanide-Doped Indium Oxide Thin-Film Transistors
10.1038/s43246-021-00193-4 · ExternalCitation · doi-reference
Surface Potential Profiling and Contact Resistance Measurements on Operating Pentacene Thin-Film Transistors by Kelvin Probe Force Microscopy
10.1063/1.1637443 · ExternalCitation · doi-reference
Amorphous Gallium Indium Zinc Oxide Thin Film Transistors: Sensitive to Oxygen Molecules
10.1063/1.2723543 · ExternalCitation · doi-reference
Surface Potential Measurement on Contact Resistance of Amorphous-InGaZnO Thin Film Transistors by Kelvin Probe Force Microscopy
10.1063/1.4958332 · ExternalCitation · doi-reference
Vertically Stacked Multilayer Atomic-Layer-Deposited Sub-1-Nm In2O3 Field-Effect Transistors with Back-End-of-Line Compatibility
10.1063/5.0092936 · ExternalCitation · doi-reference
Enhanced Stability and Mobility of Solution-Processed Oxide Thin-Film Transistors with Bilayer Terbium-Incorporated Indium Oxide Channel
10.1063/5.0098765 · ExternalCitation · doi-reference
Highly Stable InZnSnTbOX Thin-Film Transistors
10.1063/5.0255013 · ExternalCitation · doi-reference
Fringe Current Correction for Unpatterned-Channel Thin-Film Transistors Including Contact Resistance and Velocity Saturation Effects
10.1063/5.0266349 · ExternalCitation · doi-reference
Present Status of Amorphous In–Ga–Zn–O Thin-Film Transistors
10.1088/1468-6996/11/4/044305 · ExternalCitation · doi-reference
Downscaling Challenges in IGZO Transistors: A Study on Threshold Voltage Roll-up and Roll-off Effects
10.1088/1674-4926/24120005 · ExternalCitation · doi-reference
10-Nm Channel Length Indium-Tin-Oxide Transistors with I on = 1860 μA/μm, G m = 1050 μS/μm at V ds = 1 V with BEOL Compatibility
10.1109/iedm13553.2020.9371966 · ExternalCitation · doi-reference
Effect of Humidity on Properties of Aqueous-Processed Tb-Doped Indium Oxide Thin-Film Transistors
10.1109/led.2022.3204831 · ExternalCitation · doi-reference
Effect of Channel-Width Widening on a Poly-Si Thin-Film Transistor Structure in the Linear Region
10.1109/ted.2007.902853 · ExternalCitation · doi-reference
Gallium–Indium–Zinc-Oxide-Based Thin-Film Transistors: Influence of the Source/Drain Material
10.1109/ted.2008.916717 · ExternalCitation · doi-reference
Downscaling Metal─Oxide Thin-Film Transistors to Sub-50 Nm in an Exquisite Film-Profile Engineering Approach
10.1109/ted.2016.2646221 · ExternalCitation · doi-reference
Solution-Processed Yttrium-Doped IZTO Semiconductors for High-Stability Thin Film Transistor Applications
10.1109/ted.2019.2949702 · ExternalCitation · doi-reference
Effect of Self-Assembled Monolayers (SAMs) as Surface Passivation on the Flexible a-InSnZnO Thin-Film Transistors
10.1109/ted.2020.3004420 · ExternalCitation · doi-reference
Influence of Reduction in Effective Channel Length on Device Operations of In-Ga-Zn-O Thin-Film Transistors with Variations in Channel Compositions
10.1109/ted.2021.3117188 · ExternalCitation · doi-reference
Improvement in Short-Channel Effects of the Thin-Film Transistors Using Atomic-Layer Deposited In–Ga–Sn–O Channels with Various Channel Compositions
10.1109/ted.2022.3198032 · ExternalCitation · doi-reference
Ultrashort 15-Nm Flexible Radio Frequency ITO Transistors Enduring Mechanical and Temperature Stress
10.1126/sciadv.ade4075 · ExternalCitation · doi-reference
Unlocking the Performance Limits of 2T0C DRAM with Ω-Shaped-Gated Single-Crystal In2O3 FETs
10.1126/sciadv.aec3934 · ExternalCitation · doi-reference
Scanning Kelvin Probe Microscopy Study on Oxide Thin Film Transistor
10.1149/05008.0209ecst · ExternalCitation · doi-reference
