Research graph
References from Vertical Compressive Stress in Fab-Integrated WS2 FETs: An In Situ Electrical and Nanoindentation-Based Study. Local targets link to admitted publications; unresolved targets remain external evidence.
Unresolved reference
1998 · External reference
Unresolved reference
2003 · External reference
Strain for CMOS Performance Improvement
2005 · External reference
Unresolved reference
2018 · External reference
Graphene and Two-Dimensional Materials for Silicon Technology
10.1038/s41586-019-1573-9 · 2019 · External reference
Strain Engineering in Monolayer WS2, MoS2, and WS2/MoS2 Heterostructures
10.1063/1.4966218 · 2016 · External reference
Large-Area Transfer of Two-Dimensional Materials Free of Cracks, Contamination, and Wrinkles via Conformal Contact
10.1038/s41467-022-31887-z · 2022 · External reference
Yield, Variability, Reliability, and Stability of Two-Dimensional Materials-Based Electronic Devices
10.1038/s41467-020-19053-9 · 2020 · External reference
Local Strain Engineering in Atomically Thin MoS2
10.1021/nl402875m · 2013 · External reference
Strain-Enhanced Mobility of Monolayer MoS2
10.1021/acs.nanolett.2c01707 · 2022 · External reference
Biaxial Tensile Strain Enhances Electron Mobility of Monolayer Transition-Metal Dichalcogenides
10.1021/acsnano.3c08996 · 2024 · External reference
Strain Engineering for Transition-Metal Dichalcogenide-Based Field-Effect Transistors
10.1021/acsnano.6b01149 · 2016 · External reference
Modified Tight-Binding Model for Strain Effects in Monolayer Transition-Metal Dichalcogenides
10.1103/physrevb.109.245412 · 2024 · External reference
Strain Releasing of Flexible 2D Electronics through van der Waals Sliding Contact
10.1021/acsnano.2c06214 · 2022 · External reference
Strain Engineering in Semiconducting Two-Dimensional Crystals
10.1088/0953-8984/27/31/313201 · 2015 · External reference
Piezoelectric Effect in CVD-Grown Atomic Monolayer MoS2 Piezotronics
10.1038/ncomms8430 · 2015 · External reference
Dynamics and Efficient Conversion of Excitons to Trions in Non-Uniformly Strained Monolayer WS2
10.1038/s41566-019-0581-5 · 2020 · External reference
Tuning Optical Signatures of MoS2 by Blown-Bubble Bulge Straining up to Fracture
10.1021/acs.nanolett.7b00730 · 2017 · External reference
Intrinsic Properties of Suspended MoS2 on SiO2/Si Pillar Arrays for Nanomechanics and Optics
10.1021/acsnano.7b07689 · 2018 · External reference
Unresolved reference
2011 · External reference
Unresolved reference
2018 · External reference
3D TCAD Modeling for Stress Management in TSV Stacks
10.1063/1.3615695 · 2011 · External reference
Impact of Mechanical Stress on 3D NAND Flash Current Conduction
10.1109/ted.2020.3024450 · 2020 · External reference
10.1007/s44291-026-00164-4
10.1007/s44291-026-00164-4 · 2026 · External reference
Strain Relaxation of Monolayer WS2 on Plastic Substrate
10.1002/adfm.201603064 · 2016 · External reference
Biaxial Strain-Tuned Upconversion Photoluminescence of Monolayer WS2
10.1038/s41598-024-54185-8 · 2024 · External reference
Strain-Enhanced Trion Emission in Monolayer WS2
10.1063/5.0269822 · 2025 · External reference
Impact of Interface and Surface Oxide Defects on WS2 Electronic Properties from First Principles
10.1021/acsnano.4c08959 · 2025 · External reference
First-Principles Study of Strained 2D MoS2
10.1016/j.physe.2012.07.029 · 2014 · External reference
Phonon-Limited Mobility in Single-Layer MoS2: First-Principles
10.1103/physrevb.85.115317 · 2012 · External reference
Electronic Transport and Device Prospects of CVD-Grown MoS2
10.1038/ncomms4087 · 2014 · External reference
Mobility in Disordered WS2–Al2O3 Stacks from First Principles
10.1038/s41699-025-00587-9 · 2025 · External reference
Coulomb Screening and Scattering in Atomically Thin Transistors across Dimensional Crossover
10.1021/acs.nanolett.2c02023 · 2022 · External reference
Strain Engineering in MoS2, MoSe2, WS2, and WSe2
10.1007/s12274-020-2918-2 · 2021 · External reference
Efficient Strain Modulation of 2D Materials via Polymer Encapsulation
10.1038/s41467-020-15023-3 · 2020 · External reference
Strain Engineering and Raman Spectroscopy of Monolayer TMDs
10.1021/acs.chemmater.8b01672 · 2018 · External reference
Strain Relaxation of Monolayer WS2 on Plastic Substrate
10.1002/adfm.201603064 · ExternalCitation · doi-reference
Strain Engineering in MoS2, MoSe2, WS2, and WSe2
10.1007/s12274-020-2918-2 · ExternalCitation · doi-reference
10.1007/s44291-026-00164-4
10.1007/s44291-026-00164-4 · ExternalCitation · doi-reference
First-Principles Study of Strained 2D MoS2
10.1016/j.physe.2012.07.029 · ExternalCitation · doi-reference
Strain Engineering and Raman Spectroscopy of Monolayer TMDs
10.1021/acs.chemmater.8b01672 · ExternalCitation · doi-reference
Strain-Enhanced Mobility of Monolayer MoS2
10.1021/acs.nanolett.2c01707 · ExternalCitation · doi-reference
Coulomb Screening and Scattering in Atomically Thin Transistors across Dimensional Crossover
10.1021/acs.nanolett.2c02023 · ExternalCitation · doi-reference
Tuning Optical Signatures of MoS2 by Blown-Bubble Bulge Straining up to Fracture
10.1021/acs.nanolett.7b00730 · ExternalCitation · doi-reference
Strain Releasing of Flexible 2D Electronics through van der Waals Sliding Contact
10.1021/acsnano.2c06214 · ExternalCitation · doi-reference
Biaxial Tensile Strain Enhances Electron Mobility of Monolayer Transition-Metal Dichalcogenides
10.1021/acsnano.3c08996 · ExternalCitation · doi-reference
Impact of Interface and Surface Oxide Defects on WS2 Electronic Properties from First Principles
10.1021/acsnano.4c08959 · ExternalCitation · doi-reference
Strain Engineering for Transition-Metal Dichalcogenide-Based Field-Effect Transistors
10.1021/acsnano.6b01149 · ExternalCitation · doi-reference
Intrinsic Properties of Suspended MoS2 on SiO2/Si Pillar Arrays for Nanomechanics and Optics
10.1021/acsnano.7b07689 · ExternalCitation · doi-reference
Local Strain Engineering in Atomically Thin MoS2
10.1021/nl402875m · ExternalCitation · doi-reference
Electronic Transport and Device Prospects of CVD-Grown MoS2
10.1038/ncomms4087 · ExternalCitation · doi-reference
Piezoelectric Effect in CVD-Grown Atomic Monolayer MoS2 Piezotronics
10.1038/ncomms8430 · ExternalCitation · doi-reference
Efficient Strain Modulation of 2D Materials via Polymer Encapsulation
10.1038/s41467-020-15023-3 · ExternalCitation · doi-reference
Yield, Variability, Reliability, and Stability of Two-Dimensional Materials-Based Electronic Devices
10.1038/s41467-020-19053-9 · ExternalCitation · doi-reference
Large-Area Transfer of Two-Dimensional Materials Free of Cracks, Contamination, and Wrinkles via Conformal Contact
10.1038/s41467-022-31887-z · ExternalCitation · doi-reference
Dynamics and Efficient Conversion of Excitons to Trions in Non-Uniformly Strained Monolayer WS2
10.1038/s41566-019-0581-5 · ExternalCitation · doi-reference
Graphene and Two-Dimensional Materials for Silicon Technology
10.1038/s41586-019-1573-9 · ExternalCitation · doi-reference
Biaxial Strain-Tuned Upconversion Photoluminescence of Monolayer WS2
10.1038/s41598-024-54185-8 · ExternalCitation · doi-reference
Mobility in Disordered WS2–Al2O3 Stacks from First Principles
10.1038/s41699-025-00587-9 · ExternalCitation · doi-reference
3D TCAD Modeling for Stress Management in TSV Stacks
10.1063/1.3615695 · ExternalCitation · doi-reference
Strain Engineering in Monolayer WS2, MoS2, and WS2/MoS2 Heterostructures
10.1063/1.4966218 · ExternalCitation · doi-reference
Strain-Enhanced Trion Emission in Monolayer WS2
10.1063/5.0269822 · ExternalCitation · doi-reference
Strain Engineering in Semiconducting Two-Dimensional Crystals
10.1088/0953-8984/27/31/313201 · ExternalCitation · doi-reference
Modified Tight-Binding Model for Strain Effects in Monolayer Transition-Metal Dichalcogenides
10.1103/physrevb.109.245412 · ExternalCitation · doi-reference
Phonon-Limited Mobility in Single-Layer MoS2: First-Principles
10.1103/physrevb.85.115317 · ExternalCitation · doi-reference
Impact of Mechanical Stress on 3D NAND Flash Current Conduction
10.1109/ted.2020.3024450 · ExternalCitation · doi-reference
