Research graph
References from Low-Temperature Plasma-Induced Oxygen-Vacancy Engineering Enables Orthorhombic-Phase Stabilization in Hf0.5Zr0.5O2 for 2D FeFETs toward Monolithic 3D Integration. Local targets link to admitted publications; unresolved targets remain external evidence.
AI-Driven Approaches for Optimizing Power Consumption: A Comprehensive Survey
10.1007/s44163-024-00211-7 · 2024 · External reference
Paving the Way for Next-Generation All-Solid-State Batteries: Dry Electrode Technology
10.1002/adma.202506123 · 2025 · External reference
Review on Recent Developments in 2D Ferroelectrics: Theories and Applications
10.1002/adma.202005098 · 2021 · External reference
The Fundamentals and Applications of Ferroelectric HfO2
10.1038/s41578-022-00431-2 · 2022 · External reference
Next Generation Ferroelectric Materials for Semiconductor Process Integration and Their Applications
10.1063/5.0037617 · 2021 · External reference
Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances
10.1007/s11837-018-3140-5 · 2019 · External reference
Ferroelectric Field Effect Transistors for Electronics and Optoelectronics
10.1063/5.0090120 · 2023 · External reference
Ferroelectric Field Effect Transistors for Memory Applications
10.1002/adma.200904327 · 2010 · External reference
Ferroelectric Field Effect Transistors: Progress and Perspective
10.1063/5.0035515 · 2021 · External reference
The Future of Ferroelectric Field-Effect Transistor Technology
10.1038/s41928-020-00492-7 · 2020 · External reference
Investigation on Artificial Intelligence Hardware Architecture Design Based on Logic-in-Memory Ferroelectric Fin Field-Effect Transistor at Sub-3nm Technology Nodes
10.1002/aisy.202400370 · 2025 · External reference
Microstructure and Memory Characteristics of Ferroelectric LiNbO3/ZnO Composite Thin Films on Pt/TiO2/SiO2/Si Substrates
10.1016/j.jallcom.2013.12.137 · 2014 · External reference
Enhancing Ferroelectricity in HfAlOx-Based Ferroelectric Tunnel Junctions: A Comparative Study of MFS and MFIS Structures with Ultrathin Interfacial Layers
10.1016/j.ceramint.2024.04.415 · 2024 · External reference
Role of Ferroelectric Layer Thickness in Resistive Switching and Depolarization Effects in Hf0.5Zr0.5O2-Based Structures
10.1109/ted.2025.3529810 · 2025 · External reference
Transistors with Ferroelectric ZrXAl1–XOY Crystallized by ZnO Growth for Multi-Level Memory and Neuromorphic Computing
10.1038/s43246-024-00495-3 · 2024 · External reference
Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects
10.1149/2.0081505jss · 2015 · External reference
Perovskite Ferroelectric Nanomaterials
10.1039/c3nr02543h · 2013 · External reference
Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films
10.1002/adma.201404531 · 2015 · External reference
Hafnium Oxide-Based Ferroelectric Field Effect Transistors: From Materials and Reliability to Applications in Storage-Class Memory and in-Memory Computing
10.1063/5.0278057 · 2025 · External reference
Ferroelectricity in Simple Binary ZrO 2 and HfO 2
10.1021/nl302049k · 2012 · External reference
An Extensive Study of the Influence of Dopants on the Ferroelectric Properties of HfO2
10.1039/c6tc04807b · 2017 · External reference
Silicon Doped Hafnium Oxide (HSO) and Hafnium Zirconium Oxide (HZO) Based FeFET: A Material Relation to Device Physics
10.1063/1.5029324 · 2018 · External reference
Sub-Thermionic Negative Capacitance Field Effect Transistors with Solution Combustion-Derived Hf0.5Zr0.5O2
10.1002/adfm.202103748 · 2021 · External reference
Plasma-Irradiated Hafnia Ferroelectrics for High-Performance Flexible Thin Film Transistors
10.1016/j.mtnano.2025.100639 · 2025 · External reference
Ferroelectric Zr0.5Hf0.5O2 Thin Films for Nonvolatile Memory Applications
10.1063/1.3636417 · 2011 · External reference
Challenges and Prospects of 2D Electronics for Future Monolithic Complementary Field-Effect Transistors
10.1038/s41467-026-71986-9 · 2026 · External reference
Recent Progress in Two-Dimensional Materials: From Emerging Structures and Synthesis Approaches to Electronic and Sensing Applications
10.1016/j.cej.2025.166133 · 2025 · External reference
Revealing the Role of Defects in Ferroelectric Switching with Atomic Resolution
10.1038/ncomms1600 · 2011 · External reference
Improved Ferroelectric Switching in Sputtered HfZrOx Device Enabled by High Pressure Annealing
10.1109/led.2019.2959802 · 2020 · External reference
Direct Epitaxial Growth of Polar (1 - X)HfO2-(x)ZrO2 Ultrathin Films on Silicon
10.1021/acsaelm.9b00585 · 2019 · External reference
A Rhombohedral Ferroelectric Phase in Epitaxially Strained Hf0.5Zr0.5O2 Thin Films
10.1038/s41563-018-0196-0 · 2018 · External reference
Region-Selective Oxygen Vacancy Engineering for Ferroelectric Hf0.5Zr0.5O2Thin Films Processed at 300 °C
10.1021/acsami.5c08743 · 2025 · External reference
Achieving High-Endurance Ferroelectricity in Hf0.5Zr0.5O2Thin Films on Ge Substrate Through ZrO2 Interfacial Layer Induced Low-Temperature Annealing
10.1109/led.2023.3347002 · 2024 · External reference
Ultra-Thin Hf0.5Zr0.5O2 Thin-Film-Based Ferroelectric Tunnel Junction via Stress Induced Crystallization
10.1063/5.0029516 · 2020 · External reference
Large Ferroelectric Polarization of TiN/Hf0.5Zr0.5O2/TiN Capacitors Due to Stress-Induced Crystallization at Low Thermal Budget
10.1063/1.4995619 · 2017 · External reference
Role of Oxygen Vacancies in Ferroelectric or Resistive Switching Hafnium Oxide
10.1186/s40580-023-00403-4 · 2023 · External reference
A Metastable Temperature-Strain Phase Diagram of HfxZr1–xO2 Thin Films Based on Synchrotron-Based in situ 2D GIXRD Investigation
10.1063/5.0239139 · 2024 · External reference
An Ultralow Subthreshold Swing of 28 MV Dec-1 in Negative-Capacitance Thin-Film Transistors with Ferroelectric Zirconium-Aluminum Oxide Gate Oxide
10.1021/acsaelm.4c00944 · 2024 · External reference
Many Routes to Ferroelectric HfO2: A Review of Current Deposition Methods
10.1116/6.0001317 · 2022 · External reference
Phase Transformation Driven by Oxygen Vacancy Redistribution as the Mechanism of Ferroelectric Hf0.5Zr0.5O2 Fatigue
10.1002/aelm.202300877 · 2024 · External reference
The Effects of Oxygen Vacancies on Ferroelectric Phase Transition of HfO2-Based Thin Film from First-Principle
10.1016/j.commatsci.2019.05.041 · 2019 · External reference
Ferroelectric Hf0.5Zr0.5O2 Thin Films Crystallized by Pulsed Laser Annealing
10.1002/pssr.202100082 · 2021 · External reference
A New Back-End-Of-Line Ferroelectric Field-Effect Transistor Platform via Laser Processing
10.1002/smll.202406376 · 2025 · External reference
Highly Enhanced Ferroelectricity in HfO2-Based Ferroelectric Thin Film by Light Ion Bombardment
10.1126/science.abk3195 · 2022 · External reference
Enhanced Endurance and Imprint Properties in Hf0.5Zr0.5O2–δ Ferroelectric Capacitors by Tailoring the Oxygen Vacancy
10.1021/acsaelm.3c00756 · 2023 · External reference
Thin-Film Ferroelectrics
10.1002/adma.202108841 · 2022 · External reference
Chemical Expansion Affected Oxygen Vacancy Stability in Different Oxide Structures from First Principles Calculations
10.1016/j.commatsci.2014.12.030 · 2015 · External reference
Anisotropic Chemical Expansion Due to Oxygen Vacancies in Perovskite Films
10.1038/s41598-021-93968-1 · 2021 · External reference
Method to Achieve the Morphotropic Phase Boundary in HfxZr1-XO2 by Electric Field Cycling for DRAM Cell Capacitor Applications
10.1109/led.2021.3059901 · 2021 · External reference
The Atomic and Electronic Structure of Hf0.5Zr0.5O2 and Hf0.5Zr0.5O2:La Films
10.1016/j.jsamd.2021.08.001 · 2021 · External reference
Physical Mechanisms behind the Field-Cycling Behavior of HfO2-Based Ferroelectric Capacitors
10.1002/adfm.201600590 · 2016 · External reference
Ferroelectric Structural Transition in Hafnium Oxide Induced by Charged Oxygen Vacancies
10.1103/physrevb.104.l180102 · 2021 · External reference
Insights into Oxygen Vacancy Dynamics in HfO2-ZrO2 Superlattice Ferroelectric Films: Implications for Device Reliability
10.1063/5.0227170 · 2024 · External reference
H-Related Defect Complexes in HfO2: A Model for Positive Fixed Charge Defects
10.1063/1.1738946 · 2004 · External reference
Plasma-Engineered Amorphous Metal Oxide Nanostructure-Based Low-Power Highly Responsive Phototransistor Array for Next-Generation Optoelectronics
10.1021/acsanm.3c02973 · 2023 · External reference
The Role of Ar Plasma Treatment in Generating Oxygen Vacancies in Indium Tin Oxide Thin Films Prepared by the Sol-Gel Process
10.1016/j.apsusc.2017.02.007 · 2017 · External reference
Hydrogen Defects in HfO2: Impacts on Ferroelectricity and Leakage
10.1016/j.commatsci.2025.114219 · 2025 · External reference
A Wafer-Scale Nanoporous 2D Active Pixel Image Sensor Matrix with High Uniformity, High Sensitivity, and Rapid Switching
10.1002/adma.202210715 · 2023 · External reference
Highly Sensitive Active Pixel Image Sensor Array Driven by Large-Area Bilayer MoS2 Transistor Circuitry
10.1038/s41467-021-23711-x · 2021 · External reference
Nanoscale Patterning on Layered MoS2 with Stacking-Dependent Morphologies and Optical Tunning for Phototransistor Applications
10.1016/j.mtnano.2023.100367 · 2023 · External reference
Ferroelectricity and ferroelectric resistive switching in sputtered Hf0.5Zr0.5O2 thin films
10.1063/1.4953461 · 2016 · External reference
Comparative studies on ferroelectric switching kinetics of sputtered Hf0. 5Zr0.5O2 thin films with variations in film thickness and crystallinity
10.1063/5.0013487 · 2020 · External reference
Impact of Thickness Control of Hf0.5Zr0.5O2 Films for the Metal–Ferroelectric–Insulator–Semiconductor Capacitors
10.1109/led.2019.2917032 · 2019 · External reference
Physical Mechanisms behind the Field-Cycling Behavior of HfO2-Based Ferroelectric Capacitors
10.1002/adfm.201600590 · ExternalCitation · doi-reference
Sub-Thermionic Negative Capacitance Field Effect Transistors with Solution Combustion-Derived Hf0.5Zr0.5O2
10.1002/adfm.202103748 · ExternalCitation · doi-reference
Ferroelectric Field Effect Transistors for Memory Applications
10.1002/adma.200904327 · ExternalCitation · doi-reference
Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films
10.1002/adma.201404531 · ExternalCitation · doi-reference
Review on Recent Developments in 2D Ferroelectrics: Theories and Applications
10.1002/adma.202005098 · ExternalCitation · doi-reference
Thin-Film Ferroelectrics
10.1002/adma.202108841 · ExternalCitation · doi-reference
A Wafer-Scale Nanoporous 2D Active Pixel Image Sensor Matrix with High Uniformity, High Sensitivity, and Rapid Switching
10.1002/adma.202210715 · ExternalCitation · doi-reference
Paving the Way for Next-Generation All-Solid-State Batteries: Dry Electrode Technology
10.1002/adma.202506123 · ExternalCitation · doi-reference
Phase Transformation Driven by Oxygen Vacancy Redistribution as the Mechanism of Ferroelectric Hf0.5Zr0.5O2 Fatigue
10.1002/aelm.202300877 · ExternalCitation · doi-reference
Investigation on Artificial Intelligence Hardware Architecture Design Based on Logic-in-Memory Ferroelectric Fin Field-Effect Transistor at Sub-3nm Technology Nodes
10.1002/aisy.202400370 · ExternalCitation · doi-reference
Ferroelectric Hf0.5Zr0.5O2 Thin Films Crystallized by Pulsed Laser Annealing
10.1002/pssr.202100082 · ExternalCitation · doi-reference
A New Back-End-Of-Line Ferroelectric Field-Effect Transistor Platform via Laser Processing
10.1002/smll.202406376 · ExternalCitation · doi-reference
Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances
10.1007/s11837-018-3140-5 · ExternalCitation · doi-reference
AI-Driven Approaches for Optimizing Power Consumption: A Comprehensive Survey
10.1007/s44163-024-00211-7 · ExternalCitation · doi-reference
The Role of Ar Plasma Treatment in Generating Oxygen Vacancies in Indium Tin Oxide Thin Films Prepared by the Sol-Gel Process
10.1016/j.apsusc.2017.02.007 · ExternalCitation · doi-reference
Recent Progress in Two-Dimensional Materials: From Emerging Structures and Synthesis Approaches to Electronic and Sensing Applications
10.1016/j.cej.2025.166133 · ExternalCitation · doi-reference
Enhancing Ferroelectricity in HfAlOx-Based Ferroelectric Tunnel Junctions: A Comparative Study of MFS and MFIS Structures with Ultrathin Interfacial Layers
10.1016/j.ceramint.2024.04.415 · ExternalCitation · doi-reference
Chemical Expansion Affected Oxygen Vacancy Stability in Different Oxide Structures from First Principles Calculations
10.1016/j.commatsci.2014.12.030 · ExternalCitation · doi-reference
The Effects of Oxygen Vacancies on Ferroelectric Phase Transition of HfO2-Based Thin Film from First-Principle
10.1016/j.commatsci.2019.05.041 · ExternalCitation · doi-reference
Hydrogen Defects in HfO2: Impacts on Ferroelectricity and Leakage
10.1016/j.commatsci.2025.114219 · ExternalCitation · doi-reference
Microstructure and Memory Characteristics of Ferroelectric LiNbO3/ZnO Composite Thin Films on Pt/TiO2/SiO2/Si Substrates
10.1016/j.jallcom.2013.12.137 · ExternalCitation · doi-reference
The Atomic and Electronic Structure of Hf0.5Zr0.5O2 and Hf0.5Zr0.5O2:La Films
10.1016/j.jsamd.2021.08.001 · ExternalCitation · doi-reference
Nanoscale Patterning on Layered MoS2 with Stacking-Dependent Morphologies and Optical Tunning for Phototransistor Applications
10.1016/j.mtnano.2023.100367 · ExternalCitation · doi-reference
Plasma-Irradiated Hafnia Ferroelectrics for High-Performance Flexible Thin Film Transistors
10.1016/j.mtnano.2025.100639 · ExternalCitation · doi-reference
Enhanced Endurance and Imprint Properties in Hf0.5Zr0.5O2–δ Ferroelectric Capacitors by Tailoring the Oxygen Vacancy
10.1021/acsaelm.3c00756 · ExternalCitation · doi-reference
An Ultralow Subthreshold Swing of 28 MV Dec-1 in Negative-Capacitance Thin-Film Transistors with Ferroelectric Zirconium-Aluminum Oxide Gate Oxide
10.1021/acsaelm.4c00944 · ExternalCitation · doi-reference
Direct Epitaxial Growth of Polar (1 - X)HfO2-(x)ZrO2 Ultrathin Films on Silicon
10.1021/acsaelm.9b00585 · ExternalCitation · doi-reference
Region-Selective Oxygen Vacancy Engineering for Ferroelectric Hf0.5Zr0.5O2Thin Films Processed at 300 °C
10.1021/acsami.5c08743 · ExternalCitation · doi-reference
Plasma-Engineered Amorphous Metal Oxide Nanostructure-Based Low-Power Highly Responsive Phototransistor Array for Next-Generation Optoelectronics
10.1021/acsanm.3c02973 · ExternalCitation · doi-reference
Ferroelectricity in Simple Binary ZrO 2 and HfO 2
10.1021/nl302049k · ExternalCitation · doi-reference
Revealing the Role of Defects in Ferroelectric Switching with Atomic Resolution
10.1038/ncomms1600 · ExternalCitation · doi-reference
Highly Sensitive Active Pixel Image Sensor Array Driven by Large-Area Bilayer MoS2 Transistor Circuitry
10.1038/s41467-021-23711-x · ExternalCitation · doi-reference
Challenges and Prospects of 2D Electronics for Future Monolithic Complementary Field-Effect Transistors
10.1038/s41467-026-71986-9 · ExternalCitation · doi-reference
A Rhombohedral Ferroelectric Phase in Epitaxially Strained Hf0.5Zr0.5O2 Thin Films
10.1038/s41563-018-0196-0 · ExternalCitation · doi-reference
The Fundamentals and Applications of Ferroelectric HfO2
10.1038/s41578-022-00431-2 · ExternalCitation · doi-reference
Anisotropic Chemical Expansion Due to Oxygen Vacancies in Perovskite Films
10.1038/s41598-021-93968-1 · ExternalCitation · doi-reference
The Future of Ferroelectric Field-Effect Transistor Technology
10.1038/s41928-020-00492-7 · ExternalCitation · doi-reference
Transistors with Ferroelectric ZrXAl1–XOY Crystallized by ZnO Growth for Multi-Level Memory and Neuromorphic Computing
10.1038/s43246-024-00495-3 · ExternalCitation · doi-reference
Perovskite Ferroelectric Nanomaterials
10.1039/c3nr02543h · ExternalCitation · doi-reference
An Extensive Study of the Influence of Dopants on the Ferroelectric Properties of HfO2
10.1039/c6tc04807b · ExternalCitation · doi-reference
H-Related Defect Complexes in HfO2: A Model for Positive Fixed Charge Defects
10.1063/1.1738946 · ExternalCitation · doi-reference
Ferroelectric Zr0.5Hf0.5O2 Thin Films for Nonvolatile Memory Applications
10.1063/1.3636417 · ExternalCitation · doi-reference
Ferroelectricity and ferroelectric resistive switching in sputtered Hf0.5Zr0.5O2 thin films
10.1063/1.4953461 · ExternalCitation · doi-reference
Large Ferroelectric Polarization of TiN/Hf0.5Zr0.5O2/TiN Capacitors Due to Stress-Induced Crystallization at Low Thermal Budget
10.1063/1.4995619 · ExternalCitation · doi-reference
Silicon Doped Hafnium Oxide (HSO) and Hafnium Zirconium Oxide (HZO) Based FeFET: A Material Relation to Device Physics
10.1063/1.5029324 · ExternalCitation · doi-reference
Comparative studies on ferroelectric switching kinetics of sputtered Hf0. 5Zr0.5O2 thin films with variations in film thickness and crystallinity
10.1063/5.0013487 · ExternalCitation · doi-reference
Ultra-Thin Hf0.5Zr0.5O2 Thin-Film-Based Ferroelectric Tunnel Junction via Stress Induced Crystallization
10.1063/5.0029516 · ExternalCitation · doi-reference
Ferroelectric Field Effect Transistors: Progress and Perspective
10.1063/5.0035515 · ExternalCitation · doi-reference
Next Generation Ferroelectric Materials for Semiconductor Process Integration and Their Applications
10.1063/5.0037617 · ExternalCitation · doi-reference
Ferroelectric Field Effect Transistors for Electronics and Optoelectronics
10.1063/5.0090120 · ExternalCitation · doi-reference
Insights into Oxygen Vacancy Dynamics in HfO2-ZrO2 Superlattice Ferroelectric Films: Implications for Device Reliability
10.1063/5.0227170 · ExternalCitation · doi-reference
A Metastable Temperature-Strain Phase Diagram of HfxZr1–xO2 Thin Films Based on Synchrotron-Based in situ 2D GIXRD Investigation
10.1063/5.0239139 · ExternalCitation · doi-reference
Hafnium Oxide-Based Ferroelectric Field Effect Transistors: From Materials and Reliability to Applications in Storage-Class Memory and in-Memory Computing
10.1063/5.0278057 · ExternalCitation · doi-reference
Ferroelectric Structural Transition in Hafnium Oxide Induced by Charged Oxygen Vacancies
10.1103/physrevb.104.l180102 · ExternalCitation · doi-reference
Impact of Thickness Control of Hf0.5Zr0.5O2 Films for the Metal–Ferroelectric–Insulator–Semiconductor Capacitors
10.1109/led.2019.2917032 · ExternalCitation · doi-reference
Improved Ferroelectric Switching in Sputtered HfZrOx Device Enabled by High Pressure Annealing
10.1109/led.2019.2959802 · ExternalCitation · doi-reference
Method to Achieve the Morphotropic Phase Boundary in HfxZr1-XO2 by Electric Field Cycling for DRAM Cell Capacitor Applications
10.1109/led.2021.3059901 · ExternalCitation · doi-reference
Achieving High-Endurance Ferroelectricity in Hf0.5Zr0.5O2Thin Films on Ge Substrate Through ZrO2 Interfacial Layer Induced Low-Temperature Annealing
10.1109/led.2023.3347002 · ExternalCitation · doi-reference
Role of Ferroelectric Layer Thickness in Resistive Switching and Depolarization Effects in Hf0.5Zr0.5O2-Based Structures
10.1109/ted.2025.3529810 · ExternalCitation · doi-reference
Many Routes to Ferroelectric HfO2: A Review of Current Deposition Methods
10.1116/6.0001317 · ExternalCitation · doi-reference
Highly Enhanced Ferroelectricity in HfO2-Based Ferroelectric Thin Film by Light Ion Bombardment
10.1126/science.abk3195 · ExternalCitation · doi-reference
Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects
10.1149/2.0081505jss · ExternalCitation · doi-reference
Role of Oxygen Vacancies in Ferroelectric or Resistive Switching Hafnium Oxide
10.1186/s40580-023-00403-4 · ExternalCitation · doi-reference
