Research graph
References from Resonant Raman Scattering from Quasi-2D Van Hove Excitons in Strain-Engineered Germanium Microstructures. Local targets link to admitted publications; unresolved targets remain external evidence.
Lasing in direct-bandgap GeSn alloy grown on Si
10.1038/nphoton.2014.321 · 2015 · External reference
GeSn heterostructure micro-disk laser operating at 230 K
10.1364/oe.26.032500 · 2018 · External reference
Strain-relaxed GeSn-on-insulator (GeSnOI) microdisks
10.1364/oe.426321 · 2021 · External reference
GeSnOI mid-infrared laser technology
10.1038/s41377-021-00675-7 · 2021 · External reference
Room Temperature Lasing in GeSn Microdisks Enabled by Strain Engineering
10.1002/adom.202201024 · 2022 · External reference
Analysis of enhanced light emission from highly strained germanium microbridges
10.1038/nphoton.2013.67 · 2013 · External reference
Direct band Ge photoluminescence near 1.6 m coupled to Ge-on-Si microdisk resonators
10.1063/1.3526732 · 2010 · External reference
High-Precision Wavelength Tuning of GeSn Nanobeam Lasers via Dynamically Controlled Strain Engineering
10.1002/advs.202207611 · 2023 · External reference
GeSn Lasers Covering a Wide Wavelength Range Thanks to Uniaxial Tensile Strain
10.1021/acsphotonics.9b00712 · 2019 · External reference
Tensile strained direct bandgap GeSn microbridges enabled in GeSn-on-insulator substrates with residual tensile strain
10.1364/ol.476517 · 2023 · External reference
Strain-Induced Enhancement of Electroluminescence from Highly Strained Germanium Light-Emitting Diodes
10.1021/acsphotonics.8b01553 · 2019 · External reference
Lasing in strained germanium microbridges
10.1038/s41467-019-10655-6 · 2019 · External reference
Low-threshold optically pumped lasing in highly strained germanium nanowires
10.1038/s41467-017-02026-w · 2017 · External reference
Investigation of lasing in highly strained germanium at the crossover to direct band gap
10.1103/physrevresearch.4.033050 · 2022 · External reference
Tensile-strained germanium microdisk electroluminescence
10.1364/oe.23.006722 · 2015 · External reference
All-Around SiN Stressor for High and Homogeneous Tensile Strain in Germanium Microdisk Cavities
10.1002/adom.201400369 · 2015 · External reference
Direct Band Gap Germanium Microdisks Obtained with Silicon Nitride Stressor Layers
10.1021/acsphotonics.5b00632 · 2016 · External reference
An electrically pumped germanium laser
10.1364/oe.20.011316 · 2012 · External reference
On-chip light sources for silicon photonics
10.1038/lsa.2015.131 · 2015 · External reference
High level active n+ doping of strained germanium through co-implantation and nanosecond pulsed laser melting
10.1063/1.5012512 · 2018 · External reference
Improved retention of phosphorus donors in germanium using a non-amorphizing fluorine co-implantation technique
10.1063/1.4999210 · 2017 · External reference
Strategies for increased donor electrical activity in germanium (opto-) electronic materials: a review
10.1080/09506608.2016.1261223 · 2017 · External reference
Ge-on-Si laser operating at room temperature
10.1364/ol.35.000679 · 2010 · External reference
Ultimate limits of biaxial tensile strain and n-type doping for realizing an efficient low-threshold Ge laser
10.7567/jjap.55.024301 · 2016 · External reference
Top-down method to introduce ultra-high elastic strain
10.1557/jmr.2017.31 · 2017 · External reference
Unresolved reference
2007 · External reference
Band structure and optical gain of tensile-strained germanium based on a 30 band k · p formalism
10.1063/1.3279307 · 2010 · External reference
Band structure of Ge1-xSnx alloy: a full-zone 30-band k · p model
10.1088/1367-2630/ab306f · 2019 · External reference
Optical gain in single tensile-strained germanium photonic wire
10.1364/oe.19.017925 · 2011 · External reference
Flexible Germanium Nanowires: Ideal Strength, Room Temperature Plasticity, and Bendable Semiconductor Fabric
10.1021/nn1003088 · 2010 · External reference
Top-down fabricated silicon nanowires under tensile elastic strain up to 4.5%
10.1038/ncomms2102 · 2012 · External reference
Unresolved reference
2016 · External reference
Critical Review: Adhesion in surface micromechanical structures
10.1116/1.589247 · 1997 · External reference
Fabrication of uniaxially/biaxially tensile-strained Ge by strain redistribution method
10.1063/5.0153265 · 2023 · External reference
Young’s Modulus, Shear Modulus, and Poisson’s Ratio in Silicon and Germanium
10.1063/1.1713863 · 1965 · External reference
Raman Mapping Analysis of Graphene-Integrated Silicon Micro-Ring Resonators
10.1186/s11671-017-2374-4 · 2017 · External reference
10.1016/s0080-8784(08)60081-2
10.1016/s0080-8784(08)60081-2 · 1998 · External reference
Accurate strain measurements in highly strained Ge microbridges
10.1063/1.4953788 · 2016 · External reference
Temperature dependence of strain–phonon coefficient in epitaxial Ge/Si(001): A comprehensive analysis
10.1002/jrs.5860 · 2020 · External reference
1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications
10.1063/1.4935590 · 2015 · External reference
Strain-induced band gap shrinkage in Ge grown on Si substrate
10.1063/1.1564868 · 2003 · External reference
Tensile strain engineering of germanium micro-disks on free-standing SiO2 beams
10.7567/jjap.55.04eh02 · 2016 · External reference
Determining the directional strain shift coefficients for tensile Ge: a combined x-ray diffraction and Raman spectroscopy study
10.1088/1361-6501/aa5372 · 2017 · External reference
Unresolved reference
1994 · External reference
Strain effects in device processing of silicon-on-insulator materials
10.1016/s0169-4332(03)00036-9 · 2003 · External reference
Excitonic effects at the temperature-dependent E1 and E1 + Δ1 critical points of Ge
10.1063/5.0276918 · 2025 · External reference
Observation of Phase-Filling Singularities in the Optical Dielectric Function of Highly Doped n-Type Ge
10.1103/physrevlett.118.267402 · 2017 · External reference
Effects of uniaxial stress on the electroreflectance spectrum of Ge and GaAs
10.1103/physrevb.15.2127 · 1977 · External reference
Optical constants and critical-point transitions in biaxially tensile-strained epitaxial thin films of germanium
10.1103/physrevapplied.23.024037 · 2025 · External reference
Doping dependence of the optical dielectric function in n-type germanium
10.1063/1.5084277 · 2019 · External reference
Absorption Spectrum of Germanium and Zinc-Blende-Type Materials at Energies Higher than the Fundamental Absorption Edge
10.1063/1.1729543 · 1963 · External reference
Theory of Resonance Raman Scattering near Critical Points
10.1002/pssb.2220730111 · 1976 · External reference
Two-phonon infrared spectra of Si and Ge: Calculating and assigning features
10.1103/physrevb.76.054116 · 2007 · External reference
Exciton and phonon effects in the absorption spectra of germanium and silicon
10.1016/0022-3697(59)90372-5 · 1959 · External reference
Photoluminescence of bulk germanium
10.1103/physrevb.86.035204 · 2012 · External reference
Femtosecond kinetics of photoexcited carriers in germanium
10.1103/physrevb.50.5226 · 1994 · External reference
Dependence of carrier lifetime in germanium on resisitivity and carrier injection level
10.1063/1.2358967 · 2006 · External reference
All-Around SiN Stressor for High and Homogeneous Tensile Strain in Germanium Microdisk Cavities
10.1002/adom.201400369 · ExternalCitation · doi-reference
Room Temperature Lasing in GeSn Microdisks Enabled by Strain Engineering
10.1002/adom.202201024 · ExternalCitation · doi-reference
High-Precision Wavelength Tuning of GeSn Nanobeam Lasers via Dynamically Controlled Strain Engineering
10.1002/advs.202207611 · ExternalCitation · doi-reference
Temperature dependence of strain–phonon coefficient in epitaxial Ge/Si(001): A comprehensive analysis
10.1002/jrs.5860 · ExternalCitation · doi-reference
Theory of Resonance Raman Scattering near Critical Points
10.1002/pssb.2220730111 · ExternalCitation · doi-reference
Exciton and phonon effects in the absorption spectra of germanium and silicon
10.1016/0022-3697(59)90372-5 · ExternalCitation · doi-reference
10.1016/s0080-8784(08)60081-2
10.1016/s0080-8784(08)60081-2 · ExternalCitation · doi-reference
Strain effects in device processing of silicon-on-insulator materials
10.1016/s0169-4332(03)00036-9 · ExternalCitation · doi-reference
Direct Band Gap Germanium Microdisks Obtained with Silicon Nitride Stressor Layers
10.1021/acsphotonics.5b00632 · ExternalCitation · doi-reference
Strain-Induced Enhancement of Electroluminescence from Highly Strained Germanium Light-Emitting Diodes
10.1021/acsphotonics.8b01553 · ExternalCitation · doi-reference
GeSn Lasers Covering a Wide Wavelength Range Thanks to Uniaxial Tensile Strain
10.1021/acsphotonics.9b00712 · ExternalCitation · doi-reference
Flexible Germanium Nanowires: Ideal Strength, Room Temperature Plasticity, and Bendable Semiconductor Fabric
10.1021/nn1003088 · ExternalCitation · doi-reference
On-chip light sources for silicon photonics
10.1038/lsa.2015.131 · ExternalCitation · doi-reference
Top-down fabricated silicon nanowires under tensile elastic strain up to 4.5%
10.1038/ncomms2102 · ExternalCitation · doi-reference
Analysis of enhanced light emission from highly strained germanium microbridges
10.1038/nphoton.2013.67 · ExternalCitation · doi-reference
Lasing in direct-bandgap GeSn alloy grown on Si
10.1038/nphoton.2014.321 · ExternalCitation · doi-reference
GeSnOI mid-infrared laser technology
10.1038/s41377-021-00675-7 · ExternalCitation · doi-reference
Low-threshold optically pumped lasing in highly strained germanium nanowires
10.1038/s41467-017-02026-w · ExternalCitation · doi-reference
Lasing in strained germanium microbridges
10.1038/s41467-019-10655-6 · ExternalCitation · doi-reference
Strain-induced band gap shrinkage in Ge grown on Si substrate
10.1063/1.1564868 · ExternalCitation · doi-reference
Young’s Modulus, Shear Modulus, and Poisson’s Ratio in Silicon and Germanium
10.1063/1.1713863 · ExternalCitation · doi-reference
Absorption Spectrum of Germanium and Zinc-Blende-Type Materials at Energies Higher than the Fundamental Absorption Edge
10.1063/1.1729543 · ExternalCitation · doi-reference
Dependence of carrier lifetime in germanium on resisitivity and carrier injection level
10.1063/1.2358967 · ExternalCitation · doi-reference
Band structure and optical gain of tensile-strained germanium based on a 30 band k · p formalism
10.1063/1.3279307 · ExternalCitation · doi-reference
Direct band Ge photoluminescence near 1.6 m coupled to Ge-on-Si microdisk resonators
10.1063/1.3526732 · ExternalCitation · doi-reference
1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications
10.1063/1.4935590 · ExternalCitation · doi-reference
Accurate strain measurements in highly strained Ge microbridges
10.1063/1.4953788 · ExternalCitation · doi-reference
Improved retention of phosphorus donors in germanium using a non-amorphizing fluorine co-implantation technique
10.1063/1.4999210 · ExternalCitation · doi-reference
High level active n+ doping of strained germanium through co-implantation and nanosecond pulsed laser melting
10.1063/1.5012512 · ExternalCitation · doi-reference
Doping dependence of the optical dielectric function in n-type germanium
10.1063/1.5084277 · ExternalCitation · doi-reference
Fabrication of uniaxially/biaxially tensile-strained Ge by strain redistribution method
10.1063/5.0153265 · ExternalCitation · doi-reference
Excitonic effects at the temperature-dependent E1 and E1 + Δ1 critical points of Ge
10.1063/5.0276918 · ExternalCitation · doi-reference
Strategies for increased donor electrical activity in germanium (opto-) electronic materials: a review
10.1080/09506608.2016.1261223 · ExternalCitation · doi-reference
Determining the directional strain shift coefficients for tensile Ge: a combined x-ray diffraction and Raman spectroscopy study
10.1088/1361-6501/aa5372 · ExternalCitation · doi-reference
Band structure of Ge1-xSnx alloy: a full-zone 30-band k · p model
10.1088/1367-2630/ab306f · ExternalCitation · doi-reference
Optical constants and critical-point transitions in biaxially tensile-strained epitaxial thin films of germanium
10.1103/physrevapplied.23.024037 · ExternalCitation · doi-reference
Effects of uniaxial stress on the electroreflectance spectrum of Ge and GaAs
10.1103/physrevb.15.2127 · ExternalCitation · doi-reference
Femtosecond kinetics of photoexcited carriers in germanium
10.1103/physrevb.50.5226 · ExternalCitation · doi-reference
Two-phonon infrared spectra of Si and Ge: Calculating and assigning features
10.1103/physrevb.76.054116 · ExternalCitation · doi-reference
Photoluminescence of bulk germanium
10.1103/physrevb.86.035204 · ExternalCitation · doi-reference
Observation of Phase-Filling Singularities in the Optical Dielectric Function of Highly Doped n-Type Ge
10.1103/physrevlett.118.267402 · ExternalCitation · doi-reference
Investigation of lasing in highly strained germanium at the crossover to direct band gap
10.1103/physrevresearch.4.033050 · ExternalCitation · doi-reference
Critical Review: Adhesion in surface micromechanical structures
10.1116/1.589247 · ExternalCitation · doi-reference
Raman Mapping Analysis of Graphene-Integrated Silicon Micro-Ring Resonators
10.1186/s11671-017-2374-4 · ExternalCitation · doi-reference
Optical gain in single tensile-strained germanium photonic wire
10.1364/oe.19.017925 · ExternalCitation · doi-reference
An electrically pumped germanium laser
10.1364/oe.20.011316 · ExternalCitation · doi-reference
Tensile-strained germanium microdisk electroluminescence
10.1364/oe.23.006722 · ExternalCitation · doi-reference
GeSn heterostructure micro-disk laser operating at 230 K
10.1364/oe.26.032500 · ExternalCitation · doi-reference
Strain-relaxed GeSn-on-insulator (GeSnOI) microdisks
10.1364/oe.426321 · ExternalCitation · doi-reference
Ge-on-Si laser operating at room temperature
10.1364/ol.35.000679 · ExternalCitation · doi-reference
Tensile strained direct bandgap GeSn microbridges enabled in GeSn-on-insulator substrates with residual tensile strain
10.1364/ol.476517 · ExternalCitation · doi-reference
Top-down method to introduce ultra-high elastic strain
10.1557/jmr.2017.31 · ExternalCitation · doi-reference
Ultimate limits of biaxial tensile strain and n-type doping for realizing an efficient low-threshold Ge laser
10.7567/jjap.55.024301 · ExternalCitation · doi-reference
Tensile strain engineering of germanium micro-disks on free-standing SiO2 beams
10.7567/jjap.55.04eh02 · ExternalCitation · doi-reference
