Research graph
References from Overcoming the Resistance Penalty in Large-Bandgap Carbon Nanotube Electronics via Synergistic Interfacial Engineering. Local targets link to admitted publications; unresolved targets remain external evidence.
Understanding Energy Efficiency Benefits of Carbon Nanotube Field-Effect Transistors for Digital VLSI
10.1109/tnano.2018.2871841 · 2018 · External reference
Ballistic carbon nanotube field-effect transistors
10.1038/nature01797 · 2003 · External reference
Aligned, high-density semiconducting carbon nanotube arrays for high-performance electronics
10.1126/science.aba5980(acccessed2026/04/02) · 2020 · External reference
High-Performance Dual-Gate Transistors Based on Aligned Carbon Nanotubes
10.1021/acsami.4c12453 · 2024 · External reference
Scaling carbon nanotube complementary transistors to 5-nm gate lengths
10.1126/science.aaj1628(acccessed2026/04/02) · 2017 · External reference
10.1109/vlsitechnologyandcir46769.2022.9830447
10.1109/vlsitechnologyandcir46769.2022.9830447 · 2022 · External reference
Overcoming the Leakage and Contact Resistance Challenges in Highly Scaled PMOS and NMOS Carbon Nanotube Transistors
10.1021/acs.nanolett.5c00005 · 2025 · External reference
10.23919/vlsitechnologyandcir65189.2025.11074843
10.23919/vlsitechnologyandcir65189.2025.11074843 · 2025 · External reference
Band-to-Band Tunneling Leakage Current Characterization and Projection in Carbon Nanotube Transistors
10.1021/acsnano.3c04346 · 2023 · External reference
Bandgap Extraction at 10 K to Enable Leakage Control in Carbon Nanotube MOSFETs
10.1109/led.2022.3141692 · 2022 · External reference
Tunable Doping Enabled by Dielectric Screening Layer in Carbon Nanotube Transistors
10.1002/aelm.202500231 · 2025 · External reference
Improving Contact Resistance in Top-Gate Carbon Nanotube Transistor through Self-Aligned MoOx Nanoparticle Contact Doping
10.1021/acsaelm.5c01952 · 2026 · External reference
Self-Aligned Contact Doping for Performance Enhancement of Low-Leakage Carbon Nanotube Field Effect Transistors
10.1002/aelm.202300519 · 2024 · External reference
10.1109/iedm45741.2023.10413771
10.1109/iedm45741.2023.10413771 · 2023 · External reference
Self-Anchoring Process to Construct Highly-Aligned-Carbon Nanotube Transistors
10.1021/acsnano.4c17376 · 2025 · External reference
On some limitations of the Johnson–Mehl–Avrami–Kolmogorov equation
10.1016/s1359-6454(00)00280-9 · 2000 · External reference
Low-κ Extension Doping for High-Performance Carbon Nanotube Transistors: Toward High-Speed, Energy-Efficient Electronics
10.1002/advs.202505543 · 2025 · External reference
10.1109/iedm45741.2023.10413827
10.1109/iedm45741.2023.10413827 · 2023 · External reference
10.1109/iedm50854.2024.10873592
10.1109/iedm50854.2024.10873592 · 2024 · External reference
Scaling aligned carbon nanotube transistors to a sub-10 nm node
10.1038/s41928-023-00983-3 · 2023 · External reference
