Research graph
References from Composite Crystalline Aluminum Nitride Passivation for Near-Junction Thermal Management in Gallium Nitride High-Electron-Mobility Transistors. Local targets link to admitted publications; unresolved targets remain external evidence.
A review of GaN HEMT broadband power amplifiers
10.1016/j.aeue.2019.153040 · 2020 · External reference
A survey of Gallium Nitride HEMT for RF and high power applications
10.1016/j.spmi.2017.05.042 · 2017 · External reference
Research progress on self-heating effects and thermal management strategies of GaN-based electronic devices
10.1088/1361-648x/ae22b0 · 2025 · External reference
Self-Heating and Equivalent Channel Temperature in Short Gate Length GaN HEMTs
10.1109/ted.2019.2926742 · 2019 · External reference
AlGaN/GaN HFET reliability
10.1109/mmm.2009.932286 · 2009 · External reference
Nanoscale electro-thermal interactions in AlGaN/GaN high electron mobility transistors
10.1063/1.5123726 · 2020 · External reference
Surfactant effect of gallium during molecular-beam epitaxy of GaN on AlN (0001)
10.1103/physrevb.64.195406 · 2001 · External reference
Characterization of the Interfacial Toughness in a Novel “GaN-on-Diamond” Material for High-Power RF Devices
10.1021/acsaelm.8b00091 · 2019 · External reference
Low thermal resistances at GaN–SiC interfaces for HEMT technology
10.1109/led.2011.2181481 · 2012 · External reference
An over 20-W/mm S-band InAlGaN/GaN HEMT with SiC/diamond-bonded heat spreader
10.1109/led.2018.2884918 · 2018 · External reference
Thermal management of AlGaN-GaN HFETs on sapphire using flip-chip bonding with epoxy underfill
10.1109/led.2003.813362 · 2003 · External reference
GaN HEMTs on 4H-SiC/Diamond Engineered Substrate With Enhanced Heat Dissipation
10.1109/led.2025.3635043 · 2026 · External reference
Reduced Self-Heating in AlGaN/GaN HEMTs Using Nanocrystalline Diamond Heat-Spreading Films
10.1109/led.2011.2171031 · 2012 · External reference
AlN Passivation Over AlGaN/GaN HFETs for Surface Heat Spreading
10.1109/ted.2010.2044675 · 2010 · External reference
Novel All-Around Diamond Integration with GaN HEMTs Demonstrating Highly Efficient Device Cooling
10.1109/iedm45625.2022.10019509 · 2022 · External reference
Graphene quilts for thermal management of high-power GaN transistors
10.1038/ncomms1828 · 2012 · External reference
Integration of 150 nm gate length N-polar GaN MIS-HEMT devices with all-around diamond for device-level cooling
10.35848/1882-0786/adcb87 · 2025 · External reference
Low Thermal Budget Growth of Near-Isotropic Diamond Grains for Heat Spreading in Semiconductor Devices
10.1002/adfm.202208997 · 2022 · External reference
Interfacial Thermal Transport in Top-Side Diamond Integrated AlGaN/GaN High Electron Mobility Transistors
10.1021/acsami.5c13149 · 2025 · External reference
Integration of top-side low-temperature diamond on AlGaN/GaN RF HEMT for device-level cooling.
10.1063/5.0261673 · 2025 · External reference
Demonstration of the Dual Role of Topside Diamond as a Passivation Layer and Heat Spreader in AlGaN/GaN HEMTs
10.1109/iedm50572.2025.11353601 · 2025 · External reference
Crystalline Interlayers for Reducing the Effective Thermal Boundary Resistance in GaN-on-Diamond
10.1021/acsami.0c10129 · 2020 · External reference
Impact of Diamond Passivation on fT and fmax of mm-wave N-Polar GaN HEMTs
10.1109/ted.2022.3218612 · 2022 · External reference
Lattice thermal conductivity of nanoscale AlN/GaN/AlN heterostructures: Effects of partial phonon spatial confinement
10.1063/1.2365380 · 2006 · External reference
Interface-Driven Electrothermal Degradation in GaN-on-Diamond High Electron Mobility Transistors
10.3390/nano15141114 · 2025 · External reference
Status and prospects of plasma-assisted atomic layer deposition.
10.1116/1.5088582 · 2019 · External reference
Atomic-scale probing of heterointerface phonon bridges in nitride semiconductor
10.1073/pnas.2117027119 · 2022 · External reference
Substrate effects on the strain relaxation in GaN/AlN short-period superlattices
10.1186/1556-276x-7-289 · 2012 · External reference
Strain relaxation in (0001) AlN/GaN heterostructures - art. no. 245307
10.1103/physrevb.63.245307 · 2001 · External reference
Phonon transport across GaN/AlN interface: Interfacial phonon modes and phonon local non-equilibrium analysis
10.1016/j.ijheatmasstransfer.2021.122090 · 2022 · External reference
Optimizing interfacial thermal resistance in GaN/AlN heterostructures: The impact of AlN layer thickness
10.1016/j.ijheatmasstransfer.2024.126629 · 2025 · External reference
Enhanced thermal conductivity of polycrystalline aluminum nitride thin films by optimizing the interface structure
10.1063/1.4748048 · 2012 · External reference
High In-Plane Thermal Conductivity of Aluminum Nitride Thin Films
10.1021/acsnano.0c09915 · 2021 · External reference
Thermal conductivity of synthetic diamond films
10.1063/1.341571 · 1988 · External reference
The thermal conductivity of chemical-vapor-deposited diamond films on silicon
10.1063/1.350981 · 1992 · External reference
Unusually high thermal conductivity in diamond films
10.1063/1.107256 · 1992 · External reference
Photothermal examination of the heat diffusion inhomogeneity in diamond films of sub-micron thickness
10.1016/0925-9635(94)90263-1 · 1994 · External reference
Influence of the microstructure on the thermal properties of thin polycrystalline diamond films
10.1063/1.119886 · 1997 · External reference
Simultaneous measurement of thermal conductivity and interface thermal conductance of diamond thin film.
10.1116/1.3259911 · 2009 · External reference
Thermal analysis of submicron nanocrystalline diamond films
10.1016/j.diamond.2013.10.004 · 2013 · External reference
Thermal conductivity of ultrathin nano-crystalline diamond films determined by Raman thermography assisted by silicon nanowires
10.1063/1.4922035 · 2015 · External reference
Control of the in-plane thermal conductivity of ultra-thin nanocrystalline diamond films through the grain and grain boundary properties
10.1016/j.actamat.2015.09.045 · 2016 · External reference
Thermal conductivity of ultra-thin chemical vapor deposited hexagonal boron nitride films.
10.1063/1.4861468 · 2014 · External reference
APCVD hexagonal boron nitride thin films for passive near-junction thermal management of electronics
10.1088/1361-6528/aa97ae · 2017 · External reference
Modulating the thermal conductivity in hexagonal boron nitride via controlled boron isotope concentration
10.1038/s42005-019-0145-5 · 2019 · External reference
High Thermal Conductivity of Submicrometer Aluminum Nitride Thin Films Sputter-Deposited at Low Temperature
10.1021/acsnano.3c05485 · 2023 · External reference
High thermal conductivity and ultrahigh thermal boundary conductance of homoepitaxial AlN thin films
10.1063/5.0078155 · 2022 · External reference
Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere
10.1063/5.0202161 · 2024 · External reference
Structural-dependent thermal conductivity of aluminium nitride produced by reactive direct current magnetron sputtering
10.1063/1.4757298 · 2012 · External reference
Thermophysical property measurement of GaN/SiC, GaN/AlN, and AlN/SiC epitaxial wafers using multi-frequency/spot-size time-domain thermoreflectance.
10.1063/5.0245381 · 2025 · External reference
Phonon thermal conductance across GaN-AlN interfaces from first principles
10.1103/physrevb.99.075202 · 2019 · External reference
Thermal Management of GaN-on-Diamond High Electron Mobility Transistors: Effect of the Nanostructure in the Diamond Near Nucleation Region
10.1109/itherm.2016.7517734 · 2016 · External reference
Mechanical regulation to interfacial thermal transport in GaN/diamond heterostructures for thermal switch
10.1039/d4nh00245h · 2024 · External reference
Probing phonon transport dynamics across an interface by electron microscopy
10.1038/s41586-025-09108-6 · 2025 · External reference
Phonon transition across an isotopic interface
10.1038/s41467-023-38053-z · 2023 · External reference
Effects of Localized Interface Phonons on Heat Conductivity in Ingredient Heterogeneous Solids
10.1088/0256-307x/40/3/036801 · 2023 · External reference
Atomic-Scale Interface Phonon Engineering for Thermal Management: An Electron Microscopy Review
10.1002/adfm.202526614 · 2026 · External reference
Vibrational spectroscopy at atomic resolution with electron impact scattering
10.1038/s41567-019-0675-5 · 2019 · External reference
Nitrogen bonding environments and local order in hydrogenated amorphous silicon nitride films studied by Raman spectroscopy
10.1063/1.370604 · 1999 · External reference
Phonon transport at interfaces: Determining the correct modes of vibration
10.1063/1.4939207 · 2016 · External reference
Reduced thermal resistance of Al-rich AlGaN HEMTs via top-side diamond integration.
10.1063/5.0304018 · 2025 · External reference
Electrothermal Evaluation of AlGaN/GaN Membrane High Electron Mobility Transistors by Transient Thermoreflectance
10.1109/jeds.2018.2860792 · 2018 · External reference
Thermal transport in suspended and supported few-layer graphene
10.1021/nl102923q · 2011 · External reference
Thermal transport across graphene/GaN and MoS2/GaN interfaces
10.1016/j.ijheatmasstransfer.2022.123569 · 2023 · External reference
Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs
10.1063/1.4995407 · 2017 · External reference
Growth of microcrystalline diamond films after fabrication of GaN high-electron-mobility transistors for effective heat dissipation
10.35848/1347-4065/ac06d8 · 2021 · External reference
Development of Polycrystalline Diamond Compatible with the Latest N-Polar GaN mm-Wave Technology
10.1021/acs.cgd.0c01319 · 2021 · External reference
Low Thermal Budget Growth of Near-Isotropic Diamond Grains for Heat Spreading in Semiconductor Devices
10.1002/adfm.202208997 · ExternalCitation · doi-reference
Atomic-Scale Interface Phonon Engineering for Thermal Management: An Electron Microscopy Review
10.1002/adfm.202526614 · ExternalCitation · doi-reference
Photothermal examination of the heat diffusion inhomogeneity in diamond films of sub-micron thickness
10.1016/0925-9635(94)90263-1 · ExternalCitation · doi-reference
Control of the in-plane thermal conductivity of ultra-thin nanocrystalline diamond films through the grain and grain boundary properties
10.1016/j.actamat.2015.09.045 · ExternalCitation · doi-reference
A review of GaN HEMT broadband power amplifiers
10.1016/j.aeue.2019.153040 · ExternalCitation · doi-reference
Thermal analysis of submicron nanocrystalline diamond films
10.1016/j.diamond.2013.10.004 · ExternalCitation · doi-reference
Phonon transport across GaN/AlN interface: Interfacial phonon modes and phonon local non-equilibrium analysis
10.1016/j.ijheatmasstransfer.2021.122090 · ExternalCitation · doi-reference
Thermal transport across graphene/GaN and MoS2/GaN interfaces
10.1016/j.ijheatmasstransfer.2022.123569 · ExternalCitation · doi-reference
Optimizing interfacial thermal resistance in GaN/AlN heterostructures: The impact of AlN layer thickness
10.1016/j.ijheatmasstransfer.2024.126629 · ExternalCitation · doi-reference
A survey of Gallium Nitride HEMT for RF and high power applications
10.1016/j.spmi.2017.05.042 · ExternalCitation · doi-reference
Development of Polycrystalline Diamond Compatible with the Latest N-Polar GaN mm-Wave Technology
10.1021/acs.cgd.0c01319 · ExternalCitation · doi-reference
Characterization of the Interfacial Toughness in a Novel “GaN-on-Diamond” Material for High-Power RF Devices
10.1021/acsaelm.8b00091 · ExternalCitation · doi-reference
Crystalline Interlayers for Reducing the Effective Thermal Boundary Resistance in GaN-on-Diamond
10.1021/acsami.0c10129 · ExternalCitation · doi-reference
Interfacial Thermal Transport in Top-Side Diamond Integrated AlGaN/GaN High Electron Mobility Transistors
10.1021/acsami.5c13149 · ExternalCitation · doi-reference
High In-Plane Thermal Conductivity of Aluminum Nitride Thin Films
10.1021/acsnano.0c09915 · ExternalCitation · doi-reference
High Thermal Conductivity of Submicrometer Aluminum Nitride Thin Films Sputter-Deposited at Low Temperature
10.1021/acsnano.3c05485 · ExternalCitation · doi-reference
Thermal transport in suspended and supported few-layer graphene
10.1021/nl102923q · ExternalCitation · doi-reference
Graphene quilts for thermal management of high-power GaN transistors
10.1038/ncomms1828 · ExternalCitation · doi-reference
Phonon transition across an isotopic interface
10.1038/s41467-023-38053-z · ExternalCitation · doi-reference
Vibrational spectroscopy at atomic resolution with electron impact scattering
10.1038/s41567-019-0675-5 · ExternalCitation · doi-reference
Probing phonon transport dynamics across an interface by electron microscopy
10.1038/s41586-025-09108-6 · ExternalCitation · doi-reference
Modulating the thermal conductivity in hexagonal boron nitride via controlled boron isotope concentration
10.1038/s42005-019-0145-5 · ExternalCitation · doi-reference
Mechanical regulation to interfacial thermal transport in GaN/diamond heterostructures for thermal switch
10.1039/d4nh00245h · ExternalCitation · doi-reference
Unusually high thermal conductivity in diamond films
10.1063/1.107256 · ExternalCitation · doi-reference
Influence of the microstructure on the thermal properties of thin polycrystalline diamond films
10.1063/1.119886 · ExternalCitation · doi-reference
Lattice thermal conductivity of nanoscale AlN/GaN/AlN heterostructures: Effects of partial phonon spatial confinement
10.1063/1.2365380 · ExternalCitation · doi-reference
Thermal conductivity of synthetic diamond films
10.1063/1.341571 · ExternalCitation · doi-reference
The thermal conductivity of chemical-vapor-deposited diamond films on silicon
10.1063/1.350981 · ExternalCitation · doi-reference
Nitrogen bonding environments and local order in hydrogenated amorphous silicon nitride films studied by Raman spectroscopy
10.1063/1.370604 · ExternalCitation · doi-reference
Enhanced thermal conductivity of polycrystalline aluminum nitride thin films by optimizing the interface structure
10.1063/1.4748048 · ExternalCitation · doi-reference
Structural-dependent thermal conductivity of aluminium nitride produced by reactive direct current magnetron sputtering
10.1063/1.4757298 · ExternalCitation · doi-reference
Thermal conductivity of ultra-thin chemical vapor deposited hexagonal boron nitride films.
10.1063/1.4861468 · ExternalCitation · doi-reference
Thermal conductivity of ultrathin nano-crystalline diamond films determined by Raman thermography assisted by silicon nanowires
10.1063/1.4922035 · ExternalCitation · doi-reference
Phonon transport at interfaces: Determining the correct modes of vibration
10.1063/1.4939207 · ExternalCitation · doi-reference
Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs
10.1063/1.4995407 · ExternalCitation · doi-reference
Nanoscale electro-thermal interactions in AlGaN/GaN high electron mobility transistors
10.1063/1.5123726 · ExternalCitation · doi-reference
High thermal conductivity and ultrahigh thermal boundary conductance of homoepitaxial AlN thin films
10.1063/5.0078155 · ExternalCitation · doi-reference
Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere
10.1063/5.0202161 · ExternalCitation · doi-reference
Thermophysical property measurement of GaN/SiC, GaN/AlN, and AlN/SiC epitaxial wafers using multi-frequency/spot-size time-domain thermoreflectance.
10.1063/5.0245381 · ExternalCitation · doi-reference
Integration of top-side low-temperature diamond on AlGaN/GaN RF HEMT for device-level cooling.
10.1063/5.0261673 · ExternalCitation · doi-reference
Reduced thermal resistance of Al-rich AlGaN HEMTs via top-side diamond integration.
10.1063/5.0304018 · ExternalCitation · doi-reference
Atomic-scale probing of heterointerface phonon bridges in nitride semiconductor
10.1073/pnas.2117027119 · ExternalCitation · doi-reference
Effects of Localized Interface Phonons on Heat Conductivity in Ingredient Heterogeneous Solids
10.1088/0256-307x/40/3/036801 · ExternalCitation · doi-reference
Research progress on self-heating effects and thermal management strategies of GaN-based electronic devices
10.1088/1361-648x/ae22b0 · ExternalCitation · doi-reference
APCVD hexagonal boron nitride thin films for passive near-junction thermal management of electronics
10.1088/1361-6528/aa97ae · ExternalCitation · doi-reference
Strain relaxation in (0001) AlN/GaN heterostructures - art. no. 245307
10.1103/physrevb.63.245307 · ExternalCitation · doi-reference
Surfactant effect of gallium during molecular-beam epitaxy of GaN on AlN (0001)
10.1103/physrevb.64.195406 · ExternalCitation · doi-reference
Phonon thermal conductance across GaN-AlN interfaces from first principles
10.1103/physrevb.99.075202 · ExternalCitation · doi-reference
Novel All-Around Diamond Integration with GaN HEMTs Demonstrating Highly Efficient Device Cooling
10.1109/iedm45625.2022.10019509 · ExternalCitation · doi-reference
Demonstration of the Dual Role of Topside Diamond as a Passivation Layer and Heat Spreader in AlGaN/GaN HEMTs
10.1109/iedm50572.2025.11353601 · ExternalCitation · doi-reference
Thermal Management of GaN-on-Diamond High Electron Mobility Transistors: Effect of the Nanostructure in the Diamond Near Nucleation Region
10.1109/itherm.2016.7517734 · ExternalCitation · doi-reference
Electrothermal Evaluation of AlGaN/GaN Membrane High Electron Mobility Transistors by Transient Thermoreflectance
10.1109/jeds.2018.2860792 · ExternalCitation · doi-reference
Thermal management of AlGaN-GaN HFETs on sapphire using flip-chip bonding with epoxy underfill
10.1109/led.2003.813362 · ExternalCitation · doi-reference
Reduced Self-Heating in AlGaN/GaN HEMTs Using Nanocrystalline Diamond Heat-Spreading Films
10.1109/led.2011.2171031 · ExternalCitation · doi-reference
Low thermal resistances at GaN–SiC interfaces for HEMT technology
10.1109/led.2011.2181481 · ExternalCitation · doi-reference
An over 20-W/mm S-band InAlGaN/GaN HEMT with SiC/diamond-bonded heat spreader
10.1109/led.2018.2884918 · ExternalCitation · doi-reference
GaN HEMTs on 4H-SiC/Diamond Engineered Substrate With Enhanced Heat Dissipation
10.1109/led.2025.3635043 · ExternalCitation · doi-reference
AlGaN/GaN HFET reliability
10.1109/mmm.2009.932286 · ExternalCitation · doi-reference
AlN Passivation Over AlGaN/GaN HFETs for Surface Heat Spreading
10.1109/ted.2010.2044675 · ExternalCitation · doi-reference
Self-Heating and Equivalent Channel Temperature in Short Gate Length GaN HEMTs
10.1109/ted.2019.2926742 · ExternalCitation · doi-reference
Impact of Diamond Passivation on fT and fmax of mm-wave N-Polar GaN HEMTs
10.1109/ted.2022.3218612 · ExternalCitation · doi-reference
Simultaneous measurement of thermal conductivity and interface thermal conductance of diamond thin film.
10.1116/1.3259911 · ExternalCitation · doi-reference
Status and prospects of plasma-assisted atomic layer deposition.
10.1116/1.5088582 · ExternalCitation · doi-reference
Substrate effects on the strain relaxation in GaN/AlN short-period superlattices
10.1186/1556-276x-7-289 · ExternalCitation · doi-reference
Interface-Driven Electrothermal Degradation in GaN-on-Diamond High Electron Mobility Transistors
10.3390/nano15141114 · ExternalCitation · doi-reference
Growth of microcrystalline diamond films after fabrication of GaN high-electron-mobility transistors for effective heat dissipation
10.35848/1347-4065/ac06d8 · ExternalCitation · doi-reference
Integration of 150 nm gate length N-polar GaN MIS-HEMT devices with all-around diamond for device-level cooling
10.35848/1882-0786/adcb87 · ExternalCitation · doi-reference
