Research graph
References from Steep-Slope MoS2 and WSe2 Field-Effect Transistors Enabled by Ag/SiO2 Atomic Threshold Switches for Static-Power-Suppressed Complementary Inverters. Local targets link to admitted publications; unresolved targets remain external evidence.
Silicon CMOS Devices beyond Scaling
10.1147/rd.504.0339 · 2006 · External reference
Practical Strategies for Power-Efficient Computing Technologies
10.1109/jproc.2009.2035451 · 2010 · External reference
Nanoscale CMOS
10.1109/5.752515 · 1999 · External reference
CMOS Scaling for High Performance and Low Power—The Next Ten Years
10.1109/5.371968 · 1995 · External reference
Two-Dimensional Transition Metal Dichalcogenides and Their Charge Carrier Mobilities in Field-Effect Transistors
10.1007/s40820-017-0152-6 · 2017 · External reference
Electronics Based on Two-Dimensional Materials
10.1038/nnano.2014.207 · 2014 · External reference
Low-Voltage Tunnel Transistors for Beyond CMOS Logic
10.1109/jproc.2010.2070470 · 2010 · External reference
Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
10.1021/nl071804g · 2008 · External reference
A Steep-Slope Transistor Based on Abrupt Electronic Phase Transition
10.1038/ncomms8812 · 2015 · External reference
Energy-Efficient Transistors: Suppressing the Subthreshold Swing below the Physical Limit
10.1039/d0mh02029j · 2021 · External reference
Is Negative Capacitance FET a Steep-Slope Logic Switch?
10.1038/s41467-019-13797-9 · 2020 · External reference
Short-Channel Robustness from Negative Capacitance in 2D NC-FETs
10.1063/5.0030555 · 2021 · External reference
Negative Capacitance FET with 1.8-nm-Thick Zr-Doped HfO2 Oxide
10.1109/led.2019.2912413 · 2019 · External reference
Low-Power Complementary Inverter with Negative Capacitance 2D Semiconductor Transistors
10.1002/adfm.202003859 · 2020 · External reference
Short-Channel Effects in 2D Negative-Capacitance Field-Effect Transistors
10.1109/ted.2018.2805716 · 2018 · External reference
Thickness-Controlled Black Phosphorus Tunnel Field-Effect Transistor for Low-Power Switches
10.1038/s41565-019-0623-7 · 2020 · External reference
Band-to-Band Tunneling in Carbon Nanotube Field-Effect Transistors
10.1103/physrevlett.93.196805 · 2004 · External reference
A Subthermionic Tunnel Field-Effect Transistor with an Atomically Thin Channel
10.1038/nature15387 · 2015 · External reference
Tunneling Field Effect Transistor Integrated with Black Phosphorus-MoS2 Junction and Ion Gel Dielectric
10.1063/1.4974303 · 2017 · External reference
TFET Inverters with n-/p-Devices on the Same Technology Platform for Low-Voltage/Low-Power Applications
10.1109/ted.2013.2294792 · 2014 · External reference
Steep Slope Field-Effect Transistors with B–Te-Based Ovonic Threshold Switch Device
10.1109/jeds.2018.2856853 · 2018 · External reference
Power Efficient Transistors with Low Subthreshold Swing Using Abrupt Switching Devices
10.1016/j.nanoen.2022.107060 · 2022 · External reference
Atomic Threshold-Switching Enabled MoS2 Transistors towards Ultralow-Power Electronics
10.1038/s41467-020-20051-0 · 2020 · External reference
Super Steep-Switching (SS ≈ 2 mV/decade) Phase-FinFET with Pb(Zr0.52Ti0.48)O3 Threshold Switching Device
10.1063/1.5030966 · 2018 · External reference
Threshold Switching of Ag or Cu in Dielectrics: Materials, Mechanism, and Applications
10.1002/adfm.201704862 · 2018 · External reference
High-Speed Ternary CMOS Inverter by Monolithic Integration of NbO2 Threshold Switch with MOSFET
10.1109/iedm19574.2021.9720520 · 2021 · External reference
Steep-Slope Gate-Connected Atomic Threshold Switching Field-Effect Transistor with MoS2 Channel and Its Application to Infrared Detectable Phototransistors
10.1002/advs.202100208 · 2021 · External reference
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XPS and XAES Studies of the Amorphous Hydrogenated Carbon/Silicon Interface
10.1016/0039-6028(93)90082-u · 1993 · External reference
Silicon (100)/SiO2 by XPS
10.1116/11.20121101 · 2013 · External reference
Role of Spinodal Decomposition in the Structure of SiOx
10.1103/physrevb.69.245202 · 2004 · External reference
Hydrosilylation of Crystalline Silicon (111) and Hydrogenated Amorphous Silicon Surfaces: A Comparative X-ray Photoelectron Spectroscopy Study
10.1063/1.1593223 · 2003 · External reference
Controlling Oxygen Vacancies in Doped Oxide Based CBRAM for Improved Memory Performances
10.1109/iedm.2014.7046993 · External reference
Resistive Switching Behaviors of Cu/TaOx/TiN Device with Combined Oxygen Vacancy/Copper Conductive Filaments
10.1016/j.cap.2015.06.002 · 2015 · External reference
Excellent Resistive Memory Characteristics and Switching Mechanism Using a Ti Nanolayer at the Cu/TaOx Interface
10.1186/1556-276x-7-345 · 2012 · External reference
An Oxygen Vacancy Mediated Ag Reduction and Nucleation Mechanism in SiO2 RRAM Devices
10.1016/j.microrel.2019.05.005 · 2019 · External reference
Forming-Free, Low-Voltage, and High-Speed Resistive Switching in Ag/Oxygen-Deficient Vanadium Oxide(VOx)/Pt Device through Two-Step Resistance Change by Ag Filament Formation
10.1021/acsami.4c04874 · 2024 · External reference
Effects of ZrO2 Doping on HfO2 Resistive Switching Memory Characteristics
10.1063/1.4893568 · 2014 · External reference
Steep-Slope IGZO Transistor Monolithically Integrated with Initialization-Free Ag/Ti/Hf0.8Zr0.2O2 Atomic Threshold Switch
10.1002/aelm.202400780 · 2025 · External reference
Switching Dynamics of Ag-Based Filamentary Volatile Resistive Switching Devices—Part I: Experimental Characterization
10.1109/ted.2021.3076029 · 2021 · External reference
Steep Switching Hybrid Phase Transition FETs (Hyper-FET) for Low Power Applications: A Device-Circuit Co-design Perspective—Part II
10.1109/ted.2017.2650598 · 2017 · External reference
Evaluation of Various Phase-Transition Materials for Steep Switching Super-Low Power Application in the Latest Technology Node
10.1016/j.rinp.2024.107619 · 2024 · External reference
Correlated Material Enhanced SRAMs with Robust Low Power Operation
10.1109/ted.2016.2621125 · 2016 · External reference
Unresolved reference
2024 · External reference
