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References from Defect Engineering in β -Ga2O3 Schottky Barrier Diodes via Proton Irradiation and Subsequent Low-Temperature Supercritical Fluid Treatment. Local targets link to admitted publications; unresolved targets remain external evidence.
A review of Ga2O3 materials, processing, and devices
10.1063/1.5006941 · 2018 · External reference
Low-temperature supercritical fluid treatment for electrical performance restoration and enhancement in degraded β-Ga2O3-based diodes: Synergistic effects of trap passivation, interface optimization, and band structure modification
10.1016/j.jallcom.2025.184110 · 2025 · External reference
Surface pretreatment by low-temperature O2 gas annealing for performance improvement in Pt/β-Ga2O3 Schottky barrier diodes
10.1109/ted.2023.3293456 · 2024 · External reference
The optimized interface characteristics of β-Ga2O3 Schottky barrier diode with low temperature annealing
10.1063/5.0063458 · 2021 · External reference
Enhanced leakage current and on-resistance of β gallium oxide schottky barrier diodes using effective surface modification
10.1021/acsaelm.5c00361 · 2025 · External reference
Effects of oxygen annealing of β-Ga2O3 epilayers on the properties of vertical Schottky barrier diodes
10.1149/2162-8777/ab682b · 2020 · External reference
Radiation effects of high-fluence reactor neutron on Ni/β-Ga2O3 Schottky barrier diodes
10.1063/5.0185271 · 2024 · External reference
Trap-mediated current transport in tunneling layer of Ni/Al2O3/β-Ga2O3 diodes: effect of proton irradiation
10.1016/j.apsusc.2026.166671 · 2026 · External reference
Radiation effects of 5 MeV proton on Ni/β-Ga2O3 Schottky barrier diodes
10.1063/5.0242811 · 2024 · External reference
Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3
10.1063/1.5054826 · 2019 · External reference
Heavy-ion-induced degradation mechanisms and supercritical fluid recovery dynamics in Al2O3/β-Ga2O3 metal-oxide-semiconductor capacitors
10.1116/6.0005278 · 2026 · External reference
Reliability enhancement SCFP-treated lateral β-Ga2O3 MOSFETs with low interface traps of ∼1010 cm–2 eV–1 and highest PFOM of 532 MW/cm2
10.1109/ted.2026.3671741 · 2026 · External reference
Enhanced β-Ga2O3 Schottky diode interface characteristics via low-temperature supercritical fluid technology
10.1116/6.0004779 · 2025 · External reference
Performance improvement of (AlxGa1–x)2O3/Ga2O3 heterostructure FET via supercritical isostatic pressing-induced self-redox
10.1021/acsami.4c21796 · 2025 · External reference
An improved forward IV method for nonideal Schottky diodes with high series resistance
10.1109/t-ed.1984.21739 · 1984 · External reference
Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga2O3
10.1063/5.0121416 · 2023 · External reference
High power operating neuromorphic transistor based on F-doped β-Ga2O3 channel on Si wafers
10.1016/j.jallcom.2025.183267 · 2025 · External reference
Defect engineering in β-Ga2O3/4H-SiC heterojunctions via Kr ion irradiation for enhanced solar-blind photodetector performance
10.1021/acsami.5c01421 · 2025 · External reference
High-performance x-ray detector based on single-crystal β-Ga2O3:Mg
10.1021/acsami.0c20574 · 2021 · External reference
First-principle calculations of the electronic structure and optical properties of β-Ga2O3 with various vacancy defects
10.1016/j.vacuum.2024.113585 · 2024 · External reference
Correlating the electronic structures of β-Ga2O3 to its crystal tilts induced defects at nanoscale
10.1016/j.mtphys.2024.101518 · 2024 · External reference
Impact of proton irradiation and oxygen annealing on the photoluminescence and bandgap of β-Ga2O3 epitaxial wafer
10.1016/j.jallcom.2026.187124 · 2026 · External reference
Defect engineering through nitrogen annealing in low-fluence Ge ion irradiated β-Ga2O3
10.1016/j.jallcom.2026.186559 · 2026 · External reference
Origin of photoluminescence in ß-Ga2O3
10.1103/physrevb.97.115163 · 2018 · External reference
Self-trapped hole and impurity-related broad luminescence in ß-Ga2O3
10.1063/1.5140742 · 2020 · External reference
Modeling and interpretation of UV and blue luminescence intensity in β-Ga2O3 by silicon and nitrogen doping
10.1063/1.5030612 · 2018 · External reference
Correlation between blue luminescence intensity and resistivity in β-Ga2O3 single crystals
10.1063/1.4816759 · 2013 · External reference
Defect stability and electronic structure of doped β-Ga2O3: A comprehensive ab initio study
10.1016/j.jallcom.2019.04.253 · 2019 · External reference
The effect of air annealing on the optical and luminescence properties of Bi-doped β-Ga2O3 single crystals
10.1016/j.jlumin.2025.121367 · 2025 · External reference
Luminescence properties of β-Ga2O3:Bi single crystals growth by the optical floating zone method
10.1016/j.jlumin.2024.121002 · 2025 · External reference
Investigation of the Degradation Mechanism of β-Ga2O3 SBD on 5 MeV Proton Irradiation
10.1109/ted.2025.3574112 · 2025 · External reference
Investigation on Electrical Performance Degradation Mechanism of β-Ga2O3 Schottky Barrier Diodes Under 3 MeV Proton Radiation
10.1109/ted.2024.3418723 · 2024 · External reference
Strong phonon scattering and suppressed thermal transport induced by oxygen vacancy in β-Ga2O3 elucidated via machine learning
10.1007/s11431-025-3201-x · 2026 · External reference
Proton-induced defects in β-Ga2O3: A deep dive into electronic structure, carrier mobility, and thermal conductivity
10.1016/j.mssp.2025.110347 · 2026 · External reference
Radiation Effects of 500 MeV Kr+ Ions on NiO/β-Ga2O3 Heterojunction Diodes
10.1109/tns.2025.3572942 · 2025 · External reference
Leakage current by Poole-Frenkel emission in Pt Schottky contacts on (-201) β-Ga2O3 grown by edge-defined film-fed growth
10.1149/2.0111907jss · 2019 · External reference
