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References from Breaking the Drivability-Threshold-Voltage Trade-off in 40 nm Vertical Gate-All-Around Oxide FETs via Spacer-Defined Offset Engineering. Local targets link to admitted publications; unresolved targets remain external evidence.
True Nonvolatile High-Speed DRAM Cells Using Tailored Ultrathin IGZO
10.1002/adma.202210554 · 2023 · External reference
10.1109/iedm13553.2020.9371900
10.1109/iedm13553.2020.9371900 · 2020 · External reference
Toward Advanced High-k and Electrode Thin Films for DRAM Capacitors via Atomic Layer Deposition
10.1002/admt.202200878 · 2023 · External reference
Memristors Using Solution-Based IGZO Nanoparticles
10.1021/acsomega.7b01167 · 2017 · External reference
Capacitorless Two-Transistor Dynamic Random-Access Memory Cells Comprising Amorphous Indium–Tin–Gallium–Zinc Oxide Thin-Film Transistors for the Multiply–Accumulate Operation
10.1002/admt.202302209 · 2024 · External reference
A Vertically Stackable Split-Gate Amorphous Oxide Semiconductor 2T0C DRAM for Reducing Capacitive Coupling and Sneak-Path Current
10.1002/admt.202502404 · 2026 · External reference
High-Density Three-Dimensional Integration of Dynamic Random-Access Memory Using Vertical Dual-Gate IGZO TFTs
10.1038/s41467-025-65925-3 · 2025 · External reference
Oxide and 2D TMD Semiconductors for 3D DRAM Cell Transistors
10.1039/d4nh00057a · 2024 · External reference
Review of Material Properties of Oxide Semiconductor Thin Films Grown by Atomic Layer Deposition for Next-Generation 3D Dynamic Random-Access Memory Devices
10.1021/acs.chemmater.3c02223 · 2024 · External reference
Oxide Semiconductor Gain Cell-Embedded Memory: Materials and Integration Strategies for next Generation on-Chip Memory
10.1038/s44172-026-00616-5 · 2026 · External reference
Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F2 by Monolithic Stacking
10.1109/ted.2022.3154693 · 2022 · External reference
Recent Progress in InGaZnO FETs for High-Density 2T0C DRAM Applications
10.1007/s11432-023-3802-8 · 2023 · External reference
Oxygen-Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute-In-Memory Systems
10.1002/adfm.202531989 · 2026 · External reference
Scaling Benefits for Active and Gate Insulator of Vertical Channel Thin-Film Transistors Using Atomic Layer Deposited InGaZnO Channel
10.1109/led.2023.3347719 · 2024 · External reference
Impact of Al2O3 Spacers on the Improvement in Short-Channel Effects for the Mesa-Shaped Vertical-Channel In-Ga-Zn-O Thin-Film Transistors with a Channel Length below 100 Nm
10.1016/j.mssp.2023.108025 · 2024 · External reference
10.1109/iedm45625.2022.10019502
10.1109/iedm45625.2022.10019502 · 2022 · External reference
Contact Properties of Titanium Nitride Electrode in Vertical Channel-All-around Indium–Gallium–Zinc–Oxide Transistors
10.1007/s10854-024-13781-0 · 2024 · External reference
Asymmetric Contact Resistances in IGZO Vertical Channel-All-Around FETs
10.1109/led.2025.3604792 · 2025 · External reference
Vertical Channel-All-Around (CAA) IGZO FET With Recessed Source/Drain Structure to Improve Contact Characteristics
10.1109/led.2025.3563839 · 2025 · External reference
Investigation of Asymmetric Characteristics of Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O Field Effect Transistors
10.1109/led.2022.3168059 · 2022 · External reference
Surrounding Gate Vertical-Channel FET With a Gate Length of 40 Nm Using BEOL-Compatible High-Thermal-Tolerance In-Al-Zn Oxide Channel
10.1109/ted.2020.3021996 · 2020 · External reference
Unresolved reference
2024 · External reference
Unresolved reference
2024 · External reference
High Mobility a-IGO Films Produced at Room Temperature and Their Application in TFTs
10.1149/1.3257613 · 2010 · External reference
Cation Composition Ratio and Channel Length Effects on Bias Stress Instability in Amorphous InGaZnO Back-End-of-Line Field-Effect Transistors
10.1038/s41598-024-81556-y · 2024 · External reference
Electrical Characteristics of Solution-processed InGaZnO Thin Film Transistors Depending on Ga Concentration
10.1002/pssa.200983742 · 2010 · External reference
High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach
10.1021/acsami.2c13489 · 2022 · External reference
Recent Progress in the Development of Backplane Thin Film Transistors for Information Displays
10.1080/15980316.2023.2219030 · 2023 · External reference
Self-Aligned Coplanar a-IGZO TFTs and Application to High-Speed Circuits
10.1109/led.2011.2161568 · 2011 · External reference
High-Performance Drain-Offset a-IGZO Thin-Film Transistors
10.1109/led.2011.2119290 · 2011 · External reference
TCAD Simulation of Dual-Gate a-IGZO TFTs With Source and Drain Offsets
10.1109/led.2016.2611058 · 2016 · External reference
Metal Reaction-Induced Bulk-Doping Effect in Forming Conductive Source-Drain Regions of Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors
10.1021/acsami.0c21123 · 2021 · External reference
A Simple Doping Process Achieved by Modifying the Passivation Layer for Self-Aligned Top-Gate In-Ga-Zn-O Thin-Film Transistors at 200 °C
10.3390/nano12224021 · 2022 · External reference
Metal-Metal Bond-Induced Conduction Band Reshaping Drives Performance Degradation in Short-Channel Amorphous In-Ga-Zn-O Thin-Film Transistors
10.1016/j.commatsci.2025.114373 · 2026 · External reference
Effects of Unusual Gate Current on the Electrical Properties of Oxide Thin-Film Transistors
10.1038/s41598-018-32233-4 · 2018 · External reference
Effect of Source/Drain Overlap Region on Device Performance in a-IGZO Thin-Film Transistors
10.1889/jsid17.9.735 · 2009 · External reference
Source/Drain Series-Resistance Effects in Amorphous Gallium–Indium Zinc-Oxide Thin Film Transistors
10.1109/led.2008.2000815 · 2008 · External reference
Vertical Oxide Thin-Film Transistor with Interfacial Oxidation
10.1038/s41598-022-07052-3 · 2022 · External reference
Enhancing Gate Control and Mitigating Short Channel Effects in 20–50 Nm Channel Length Amorphous Oxide Thin-Film Transistors
10.1021/acsnano.5c10260 · 2025 · External reference
Controlling Short-Channel Effects in Deep-Submicron SOI MOSFETs for Improved Reliability: A Review
10.1109/tdmr.2004.824359 · 2004 · External reference
Multiple-Gate SOI MOSFETs
10.1016/j.sse.2003.12.020 · 2004 · External reference
Unresolved reference
2024 · External reference
Specific Contact Resistivity Reduction in Amorphous IGZO Thin-Film Transistors through a TiN/IGTO Heterogeneous Interlayer
10.1038/s41598-024-61837-2 · 2024 · External reference
Improved Specific Contact Resistivity in Amorphous IGZO Transistors Using an ALD-Derived Al-Doped ZnO Interlayer
10.1109/led.2024.3381159 · 2024 · External reference
Intrinsic Device Parameter Extraction Method for Zinc Oxide-Based Thin-Film Transistors
10.35848/1882-0786/ac3967 · 2021 · External reference
A Novel Extraction Method of Device Parameters for Thin-Film Transistors (TFTs)
10.1016/j.physleta.2021.127386 · 2021 · External reference
Enhancing the Strain Limit of Stretchable Organic Transistors by Schottky Barrier-Dominated Transport Mode
10.1038/s41467-026-75302-3 · 2026 · External reference
Influence of Fabrication Parameters on the Schottky Barrier Modulation of Mo/MoOx/IGZO/Ti/Mo Memristor
10.1088/2515-7639/ae35a7 · 2026 · External reference
Analysis of Physical Mechanisms for Channel-Length-Dependent PBTS Reliability in SA TG Coplanar IGZO TFTs
10.1038/s41598-025-27549-x · 2025 · External reference
Study of Mechanism of Stress-Induced Threshold Voltage Shift and Recovery in Top-Gate Amorphous-InGaZnO4 Thin-Film Transistors with Source- and Drain-Offsets
10.1016/j.ssc.2012.06.012 · 2012 · External reference
Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With SiNx and SiO2 Gate Dielectrics
10.1109/led.2010.2073439 · 2010 · External reference
Impact of Source-to-Gate and Drain-to-Gate Overlap Lengths on Performance of Inverted Staggered a-IGZO TFTs With an Etch Stopper
10.1109/ted.2020.3004115 · 2020 · External reference
Crystalline IGO TFTs With High Reliability Under DRAM-Compatible 600 °C N2 Thermal Budgets
10.1109/led.2026.3675621 · 2026 · External reference
Hydrogen-State-Engineered Oxide Semiconductor Channels Enabling Reliable 2T0C DRAM Operation
10.1002/aelm.202500825 · 2026 · External reference
10.1109/iedm19574.2021.9720596
10.1109/iedm19574.2021.9720596 · 2021 · External reference
1T-1C Dynamic Random Access Memory Status, Challenges, and Prospects
10.1109/ted.2020.2963911 · 2020 · External reference
