Research graph
References from Fast Electronic Memristors with Improved Retention and Synaptic Functionality Enabled by Tri-TaOx Engineering. Local targets link to admitted publications; unresolved targets remain external evidence.
An Analysis of Components and Enhancement Strategies for Advancing Memristive Neural Networks
10.1002/adma.202412549 · 2025 · External reference
The End of Moore’s Law: A New Beginning for Information Technology
10.1109/mcse.2017.29 · 2017 · External reference
Localized Conduction Channels in Memristors
10.1021/acs.chemrev.4c00454 · 2024 · External reference
Design of Materials Configuration for Optimizing Redox-Based Resistive Switching Memories
10.1002/adma.202105022 · 2022 · External reference
Novel Electroforming-free Nanoscaffold Memristor with Very High Uniformity, Tunability, and Density
10.1002/adma.201401917 · 2014 · External reference
Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories
10.1021/nl4015638 · 2013 · External reference
Multifilamentary Conduction Modelling of Bipolar Ta2O5/TaOx Bi-Layered RRAM; IEEE Non-Volatile Memory Systems and Applications Symposium (NVMSA)
10.1109/nvmsa.2018.00029 · 2018 · External reference
A Numerical Study of Multi Filament Formation in Metal-Ion Based CBRAM
10.1063/1.4942209 · 2016 · External reference
A Novel True Random Number Generator Based on a Stochastic Diffusive Memristor
10.1038/s41467-017-00869-x · 2017 · External reference
Hardware-Intrinsic Security Primitives Enabled by Analogue State and Nonlinear Conductance Variations in Integrated Memristors
10.1038/s41928-018-0039-7 · 2018 · External reference
Thousands of Conductance Levels in Memristors Integrated on CMOS
10.1038/s41586-023-05759-5 · 2023 · External reference
Enhancing Uniformity, Read Voltage Margin, and Retention in Three-Dimensional and Self-Rectifying Vertical Pt/Ta2O5/Al2O3/TiN Memristors
10.1021/acsami.4c15598 · 2024 · External reference
Retention Secured Nonlinear and Self-Rectifying Analog Charge Trap Memristor for Energy-Efficient Neuromorphic Hardware
10.1002/advs.202205654 · 2023 · External reference
Temperature Dependent Trap Characterisation and Modelling of Silicon Carbide MOS Capacitor
10.1109/eurosime60745.2024.10491433 · 2024 · External reference
Electron-Hole Recombination in Germanium
10.1103/physrev.87.387 · 1952 · External reference
Statistics of the Recombinations of Holes and Electrons
10.1103/physrev.87.835 · 1952 · External reference
Investigation of the Retention Performance of an Ultra-Thin HfO2 Resistance Switching Layer in an Integrated Memory Device
10.1063/1.5033967 · 2018 · External reference
Improved Performance of HfxZnyO-based RRAM and Its Switching Characteristics down to 4 K Temperature
10.1002/aelm.202201250 · 2023 · External reference
Concealable Physical Unclonable Function Generation and an In-Memory Encryption Machine Using Vertical Self-Rectifying Memristors
10.1039/d4nh00420e · 2025 · External reference
Cyclic Plasma Treatment for Enhancing the Synaptic Performance of Bulk-Conductive Resistive Switching Memory
10.1021/acsami.5c15918 · 2025 · External reference
Memristors with Tunable Volatility for Reconfigurable Neuromorphic Computing
10.1021/acsnano.4c03238 · 2024 · External reference
Low-Temperature Atomic Layer Epitaxy of AlN Ultrathin Films by Layer-by-Layer, in-Situ Atomic Layer Annealing
10.1038/srep39717 · 2017 · External reference
High-K Gate Dielectrics Treated with in Situ Atomic Layer Bombardment
10.1021/acsaelm.9b00080 · 2019 · External reference
Atomic Layer Engineering on Resistive Switching in Sub-4 Nm AlN Resistive Random Access Memory Devices
10.1039/d3tc00542a · 2023 · External reference
Resistive Switching Memories Based on Metal Oxides: Mechanisms, Reliability and Scaling
10.1088/0268-1242/31/6/063002 · 2016 · External reference
Filamentary and Interface-Type Memristors Based on Tantalum Oxide for Energy-Efficient Neuromorphic Hardware
10.1021/acsami.2c12296 · 2022 · External reference
Time-Varying Data Processing with Nonvolatile Memristor-Based Temporal Kernel
10.1038/s41467-021-25925-5 · 2021 · External reference
Acceleration of Deep Neural Network Training with Resistive Cross-Point Devices: Design Considerations
10.3389/fnins.2016.00333 · 2016 · External reference
Resistive Memory Device Requirements for a Neural Algorithm Accelerator
10.1109/ijcnn.2016.7727298 · 2016 · External reference
Mitigating Effects of Non-Ideal Synaptic Device Characteristics for on-Chip Learning
10.1109/iccad.2015.7372570 · 2015 · External reference
Defect-Engineered Electroforming-Free Analog HfOx Memristor and Its Application to the Neural Network
10.1021/acsami.9b16499 · 2019 · External reference
Synaptic Plasticity in Zinc Oxide-Based Flexible Invisible Transparent Memristor by Modulating Oxygen Concentration
10.1063/5.0214225 · 2024 · External reference
Low-Power and Non-Volatile Multi-Level Synaptic Weight Update Characteristics in Self-Selecting Nb2O5/CeO2 Memristor Crossbar Array for in-Memory Computing System
10.1016/j.nanoen.2026.111739 · 2026 · External reference
Enhancement of Stability and Durability in MXene/TaOx Bilayer Memristor through Hetero-Interface Engineering for Neuromorphic Computing
10.1016/j.carbon.2026.121273 · 2026 · External reference
Super-Linear-Threshold-Switching Selector with Multiple Jar-Shaped Cu-Filaments in the Amorphous Ge3Se7 Resistive Switching Layer in a Cross-Point Synaptic Memristor Array
10.1002/adma.202203643 · 2022 · External reference
Mimicking Biological Synapses with A-HfSiOx-Based Memristor: Implications for Artificial Intelligence and Memory Applications
10.1186/s40580-023-00380-8 · 2023 · External reference
Lasing-Assisted Synthesis of Metal–Organic Frameworks (MOFs) and Its Application to Memory and Neuromorphic Devices
10.1002/adfm.202406088 · 2024 · External reference
Hybrid WS2-Based Memristor With Tunable Conductance Modulation for Neuromorphic and Nociceptive Learning
10.1002/smll.202508508 · 2025 · External reference
Gradient Nitrogen-Doped Memristor for Computing-in-Memory
10.1021/acs.nanolett.5c03050 · 2025 · External reference
HfO2-Based Memristor as an Artificial Synapse for Neuromorphic Computing with Tri-Layer HfO2/BiFeO3/HfO2 Design
10.1002/adfm.202107131 · 2021 · External reference
A TaOx/TiOy Bilayer Memristor with Enhanced Synaptic Features for Neuromorphic Computing
10.1002/aelm.202400008 · 2024 · External reference
Enhanced Switching Properties in TaOx Memristors Using Diffusion Limiting Layer for Synaptic Learning
10.1109/jeds.2020.2966799 · 2020 · External reference
Oxygen Vacancy Transition in HfOx-Based Flexible, Robust, and Synaptic Bi-Layer Memristor for Neuromorphic and Wearable Applications
10.1002/admt.202101208 · 2022 · External reference
Highly Efficient Invisible TaOx/ZTO Bilayer Memristor for Neuromorphic Computing and Image Sensing
10.1021/acsaelm.1c01152 · 2022 · External reference
Vacancy-Engineered Nickel Ferrite Forming-Free Low-Voltage Resistive Switches for Neuromorphic Circuits
10.1021/acsami.4c01501 · 2024 · External reference
Interface-Induced Synaptic Performance in CeO2/La0.8Ba0.2 MnO3 Oxygen Reservoir Junction
10.1021/acsami.5c19731 · 2025 · External reference
HfO2-Based Memristor as an Artificial Synapse for Neuromorphic Computing with Tri-Layer HfO2/BiFeO3/HfO2 Design
10.1002/adfm.202107131 · ExternalCitation · doi-reference
Lasing-Assisted Synthesis of Metal–Organic Frameworks (MOFs) and Its Application to Memory and Neuromorphic Devices
10.1002/adfm.202406088 · ExternalCitation · doi-reference
Novel Electroforming-free Nanoscaffold Memristor with Very High Uniformity, Tunability, and Density
10.1002/adma.201401917 · ExternalCitation · doi-reference
Design of Materials Configuration for Optimizing Redox-Based Resistive Switching Memories
10.1002/adma.202105022 · ExternalCitation · doi-reference
Super-Linear-Threshold-Switching Selector with Multiple Jar-Shaped Cu-Filaments in the Amorphous Ge3Se7 Resistive Switching Layer in a Cross-Point Synaptic Memristor Array
10.1002/adma.202203643 · ExternalCitation · doi-reference
An Analysis of Components and Enhancement Strategies for Advancing Memristive Neural Networks
10.1002/adma.202412549 · ExternalCitation · doi-reference
Oxygen Vacancy Transition in HfOx-Based Flexible, Robust, and Synaptic Bi-Layer Memristor for Neuromorphic and Wearable Applications
10.1002/admt.202101208 · ExternalCitation · doi-reference
Retention Secured Nonlinear and Self-Rectifying Analog Charge Trap Memristor for Energy-Efficient Neuromorphic Hardware
10.1002/advs.202205654 · ExternalCitation · doi-reference
Improved Performance of HfxZnyO-based RRAM and Its Switching Characteristics down to 4 K Temperature
10.1002/aelm.202201250 · ExternalCitation · doi-reference
A TaOx/TiOy Bilayer Memristor with Enhanced Synaptic Features for Neuromorphic Computing
10.1002/aelm.202400008 · ExternalCitation · doi-reference
Hybrid WS2-Based Memristor With Tunable Conductance Modulation for Neuromorphic and Nociceptive Learning
10.1002/smll.202508508 · ExternalCitation · doi-reference
Enhancement of Stability and Durability in MXene/TaOx Bilayer Memristor through Hetero-Interface Engineering for Neuromorphic Computing
10.1016/j.carbon.2026.121273 · ExternalCitation · doi-reference
Low-Power and Non-Volatile Multi-Level Synaptic Weight Update Characteristics in Self-Selecting Nb2O5/CeO2 Memristor Crossbar Array for in-Memory Computing System
10.1016/j.nanoen.2026.111739 · ExternalCitation · doi-reference
Localized Conduction Channels in Memristors
10.1021/acs.chemrev.4c00454 · ExternalCitation · doi-reference
Gradient Nitrogen-Doped Memristor for Computing-in-Memory
10.1021/acs.nanolett.5c03050 · ExternalCitation · doi-reference
Highly Efficient Invisible TaOx/ZTO Bilayer Memristor for Neuromorphic Computing and Image Sensing
10.1021/acsaelm.1c01152 · ExternalCitation · doi-reference
High-K Gate Dielectrics Treated with in Situ Atomic Layer Bombardment
10.1021/acsaelm.9b00080 · ExternalCitation · doi-reference
Filamentary and Interface-Type Memristors Based on Tantalum Oxide for Energy-Efficient Neuromorphic Hardware
10.1021/acsami.2c12296 · ExternalCitation · doi-reference
Vacancy-Engineered Nickel Ferrite Forming-Free Low-Voltage Resistive Switches for Neuromorphic Circuits
10.1021/acsami.4c01501 · ExternalCitation · doi-reference
Enhancing Uniformity, Read Voltage Margin, and Retention in Three-Dimensional and Self-Rectifying Vertical Pt/Ta2O5/Al2O3/TiN Memristors
10.1021/acsami.4c15598 · ExternalCitation · doi-reference
Cyclic Plasma Treatment for Enhancing the Synaptic Performance of Bulk-Conductive Resistive Switching Memory
10.1021/acsami.5c15918 · ExternalCitation · doi-reference
Interface-Induced Synaptic Performance in CeO2/La0.8Ba0.2 MnO3 Oxygen Reservoir Junction
10.1021/acsami.5c19731 · ExternalCitation · doi-reference
Defect-Engineered Electroforming-Free Analog HfOx Memristor and Its Application to the Neural Network
10.1021/acsami.9b16499 · ExternalCitation · doi-reference
Memristors with Tunable Volatility for Reconfigurable Neuromorphic Computing
10.1021/acsnano.4c03238 · ExternalCitation · doi-reference
Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories
10.1021/nl4015638 · ExternalCitation · doi-reference
A Novel True Random Number Generator Based on a Stochastic Diffusive Memristor
10.1038/s41467-017-00869-x · ExternalCitation · doi-reference
Time-Varying Data Processing with Nonvolatile Memristor-Based Temporal Kernel
10.1038/s41467-021-25925-5 · ExternalCitation · doi-reference
Thousands of Conductance Levels in Memristors Integrated on CMOS
10.1038/s41586-023-05759-5 · ExternalCitation · doi-reference
Hardware-Intrinsic Security Primitives Enabled by Analogue State and Nonlinear Conductance Variations in Integrated Memristors
10.1038/s41928-018-0039-7 · ExternalCitation · doi-reference
Low-Temperature Atomic Layer Epitaxy of AlN Ultrathin Films by Layer-by-Layer, in-Situ Atomic Layer Annealing
10.1038/srep39717 · ExternalCitation · doi-reference
Atomic Layer Engineering on Resistive Switching in Sub-4 Nm AlN Resistive Random Access Memory Devices
10.1039/d3tc00542a · ExternalCitation · doi-reference
Concealable Physical Unclonable Function Generation and an In-Memory Encryption Machine Using Vertical Self-Rectifying Memristors
10.1039/d4nh00420e · ExternalCitation · doi-reference
A Numerical Study of Multi Filament Formation in Metal-Ion Based CBRAM
10.1063/1.4942209 · ExternalCitation · doi-reference
Investigation of the Retention Performance of an Ultra-Thin HfO2 Resistance Switching Layer in an Integrated Memory Device
10.1063/1.5033967 · ExternalCitation · doi-reference
Synaptic Plasticity in Zinc Oxide-Based Flexible Invisible Transparent Memristor by Modulating Oxygen Concentration
10.1063/5.0214225 · ExternalCitation · doi-reference
Resistive Switching Memories Based on Metal Oxides: Mechanisms, Reliability and Scaling
10.1088/0268-1242/31/6/063002 · ExternalCitation · doi-reference
Electron-Hole Recombination in Germanium
10.1103/physrev.87.387 · ExternalCitation · doi-reference
Statistics of the Recombinations of Holes and Electrons
10.1103/physrev.87.835 · ExternalCitation · doi-reference
Temperature Dependent Trap Characterisation and Modelling of Silicon Carbide MOS Capacitor
10.1109/eurosime60745.2024.10491433 · ExternalCitation · doi-reference
Mitigating Effects of Non-Ideal Synaptic Device Characteristics for on-Chip Learning
10.1109/iccad.2015.7372570 · ExternalCitation · doi-reference
Resistive Memory Device Requirements for a Neural Algorithm Accelerator
10.1109/ijcnn.2016.7727298 · ExternalCitation · doi-reference
Enhanced Switching Properties in TaOx Memristors Using Diffusion Limiting Layer for Synaptic Learning
10.1109/jeds.2020.2966799 · ExternalCitation · doi-reference
The End of Moore’s Law: A New Beginning for Information Technology
10.1109/mcse.2017.29 · ExternalCitation · doi-reference
Multifilamentary Conduction Modelling of Bipolar Ta2O5/TaOx Bi-Layered RRAM; IEEE Non-Volatile Memory Systems and Applications Symposium (NVMSA)
10.1109/nvmsa.2018.00029 · ExternalCitation · doi-reference
Mimicking Biological Synapses with A-HfSiOx-Based Memristor: Implications for Artificial Intelligence and Memory Applications
10.1186/s40580-023-00380-8 · ExternalCitation · doi-reference
Acceleration of Deep Neural Network Training with Resistive Cross-Point Devices: Design Considerations
10.3389/fnins.2016.00333 · ExternalCitation · doi-reference
