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Effect of Thickness on Ferroelectric Properties of Bi3.25La0.75Ti3O12 Thin Films

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Flexible and Wake-up Free Hf0.5Zr0.5O2 Ferroelectric Thin Films with Ultra-Low Operation Voltage and High Polarization

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Back-End-of-Line Compatible Hf0.5Zr0.5O2 Ferroelectric Devices Enabled by Microwave Annealing

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Ultrathin WOx Interfacial Layer Improving the Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films on Polyimide

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