Research graph
References from Speed-Adaptive In-Sensor Reservoir Computing via Gate-Tunable MoS2– <i>x</i> /MoTe2 Heterojunction Dynamics. Local targets link to admitted publications; unresolved targets remain external evidence.
WSe2/β-Ga2O3 p–n Heterojunction-Based Normally Off Phototransistors for Self-Powered UV-C Detection
10.1021/acsphotonics.4c02595 · 2025 · External reference
An Advanced Robust van der Waals Heterostructure Photodetector with Ultralow Dark Current and a Large Linear Dynamic Range for Polarization Imaging and Optical Communication
10.1021/acsami.5c19910 · 2026 · External reference
Te nanomesh/black-Si van der Waals Heterostructure for High-Performance Photodetector
10.1002/adom.202400056 · 2024 · External reference
Dielectric-Free MoS2/VO2 Junction Field-Effect Transistor with Sensitive and Ultrafast Photoresponse for Light Encrypted Communication
10.1002/adma.202503294 · 2025 · External reference
Ultrafast Fully Depleted SnSe2/MoTe2/SnSe2 Heterostructure Photodetector for Near-Infrared Next-Generation Automatic Obstacle Avoidance Systems
10.1002/adom.202502189 · 2025 · External reference
Realizing Ultrahigh Detectivity and Fast Respond Speed Self-Powered Photodetectors Based on PdSe2/Gr/InSe van der Waals Heterojunction with Graphene Interlayer
10.1021/acs.jpclett.5c03891 · 2026 · External reference
Self-Powered Broadband UV-NIR Polarization-Sensitive Photodetector Based on Unipolar van der Waals Heterostructure
10.1021/acsami.5c01752 · 2025 · External reference
UV–Vis–NIR broadband self-powered Bi2O2Se-based semi-vertical heterojunction photodetector with high performance
10.26599/nr.2026.94908400 · 2026 · External reference
Highly Efficient Utilization of High-Energy Excitons in Multilayer WSe2 for Self-Powered Ultraviolet Photodetector With Near-Unity External Quantum Efficiency
10.1002/lpor.202400951 · 2024 · External reference
Programmable Photosensor with a Gate-Tunable Schottky Barrier for Multiscale Reservoir Computing
10.1002/adfm.202529105 · 2026 · External reference
Tunable Synaptic Plasticity in 2D Ferroelectric Semiconductor Transistor for High-Precision Neuromorphic Computing
10.1021/acsaelm.5c00020 · 2025 · External reference
In-sensor reservoir computing for biometric identification based on MoTe2/BaTiO3 optical synapses
10.1002/inf2.70036 · 2025 · External reference
Reconfigurable, Nonvolatile, Optoelectronic Synaptic Memtransistor Based on MoS2/Te van der Waals Heterostructures
10.1002/adfm.202423333 · 2025 · External reference
All-Photonic Synapses for Biomimetic Ocular System
10.1002/adfm.202409419 · 2024 · External reference
Programmable Optoelectronic Synaptic Transistors Based on MoS2/Ta2NiS5 Heterojunction for Energy-Efficient Neuromorphic Optical Operation
10.1002/smll.202403103 · 2024 · External reference
Towards Artificial Visual Sensory System: Organic Optoelectronic Synaptic Materials and Devices
10.1002/anie.202313634 · 2023 · External reference
2D MoTe2/MoS2-xOx Van der Waals Heterostructure for Bimodal Neuromorphic Optoelectronic Computing
10.1002/aelm.202300388 · 2023 · External reference
Ultralow Power Optoelectronic Memtransistors Based on Vertical WS2/In2Se3 van der Waals Heterostructures
10.1021/acsami.4c21946 · 2025 · External reference
Multi-Wavelength Optoelectronic Synaptic Transistors Based on Transition Metal Telluride-Sulfide Heterostructures
10.1002/adom.202400037 · 2024 · External reference
Polarization-Modulated Multi-Mode Optoelectronic Synaptic Transistor for Sensing-Memory-Logic Computing and Optical Wireless Communication
10.1002/adfm.202424926 · 2025 · External reference
Reconfigurable and nonvolatile ferroelectric bulk photovoltaics based on 3R-WS2 for machine vision
10.1038/s41467-024-55562-7 · 2025 · External reference
Ferroelectric Polarization Enhanced Optoelectronic Synaptic Response of a CuInP2S6 Transistor Structure
10.1021/acsnano.4c08810 · 2024 · External reference
Low-Power Dual-Functional Neuromorphic Optoelectronic Device Based on Bi4.15Nd0.85Ti3FeO15/ZnO Heterojunction
10.1002/smll.202513679 · 2026 · External reference
Dual-Mode Optoelectronic Neuromorphic Architecture for Imaging-Recognition of Chinese Characters
10.1002/adom.202502311 · 2025 · External reference
Dual-Mode Photonic Synapse Based on a Lead-Free 2D Ruddlesden–Popper Perovskite for Neuromorphic Vision
10.1021/acsami.5c10557 · 2025 · External reference
CMOS-integrated organic neuromorphic imagers for high-resolution dual-modal imaging
10.1038/s41467-025-59446-2 · 2025 · External reference
Intrinsic plasticity of silicon nanowire neurotransistors for dynamic memory and learning functions
10.1038/s41928-020-0412-1 · 2020 · External reference
3D Integration of functionally diverse 2D materials for optoelectronic reservoir computing
10.1038/s41467-025-65109-z · 2025 · External reference
Transistor-type optoelectronic sensors from light intensity detection to multifunctional perception
10.1038/s44460-026-00035-1 · 2026 · External reference
Enhancing Computing Capacity via Reconfigurable MoS2-Based Artificial Synapse with Dual Feature Strategy for Wide Reservoir Computing
10.1002/adfm.202416811 · 2024 · External reference
2D Reconfigurable Memory Device Enabled by Defect Engineering for Multifunctional Neuromorphic Computing
10.1002/adma.202403785 · 2024 · External reference
Low-power reconfigurable MoS2/MoTe2 optoelectronic synapse for visual recognition
10.26599/nr.2025.94907741 · 2025 · External reference
A Robust Biomimetic van der Waals Heterostructure Visual Neuromorphic Device for Multiscale In-Sensor Reservoir Computing
10.1021/acsnano.5c14569 · 2025 · External reference
Gate-Tunable Dual-Mode Optoelectronic Device for Self-Powered Photodetector and Optoelectronic Synapse
10.1002/advs.202416259 · 2025 · External reference
Retina-Inspired Dual-Mode Photodetector with Spectral-Tunable Memory Switching for Neuromorphic Visual Systems
10.1021/acsphotonics.5c00036 · 2025 · External reference
Dual-Mode Defect-Engineered MoS2/SnSe2 Heterostructures via Heavy Ion Irradiation for Solar-Blind UV Photodetection and Neuromorphic Optoelectronics
10.1002/adom.202501738 · 2025 · External reference
Influence of sulfur vacancies on the high frequency phonon modes of ALD-grown monolayer MoS2
10.1103/kzhl-5sy6 · 2025 · External reference
Vacancy-Migration-Enabled, Two-Dimensional Gate-Free Neuromorphic Devices for High-Temperature Applications
10.1002/adfm.202531998 · 2026 · External reference
Band Alignments, Electronic Structure, and Core-Level Spectra of Bulk Molybdenum Dichalcogenides (MoS2, MoSe2, and MoTe2)
10.1021/acs.jpcc.2c05100 · 2022 · External reference
Modulating the Functions of MoS2/MoTe2 van der Waals Heterostructure via Thickness Variation
10.1021/acsnano.9b00014 · 2019 · External reference
Controlling Carrier Transport in Vertical MoTe2/MoS2 van der Waals Heterostructures
10.1021/acsami.1c16594 · 2021 · External reference
PdSe2/2H–MoTe2 Heterojunction Self-Powered Photodetector: Broadband Photodetection and Linear/Circular Polarization Capability
10.1021/acsnano.4c12298 · 2024 · External reference
Self-Powered Te/WSe2 Van Der Waals Heterojunction Photodetectors With High Light On/Off Ratio And Fast Response
10.1002/adom.202300319 · 2023 · External reference
Type-II Bi2O2Se/MoTe2 van der Waals Heterostructure Photodetectors with High Gate-Modulation Photovoltaic Performance
10.1021/acsami.3c01807 · 2023 · External reference
High-performance self-powered ultraviolet to near-infrared photodetector based on WS2/InSe van der Waals heterostructure
10.1007/s12274-022-5323-1 · 2022 · External reference
Self-Powered and Vis-Infrared Broadband Gr/InSe/MoTe2 Heterostructure Photodetectors with Ultra-Fast Response and Low Dark Current
10.1002/lpor.202400480 · 2024 · External reference
Interlayer Transition Induced Infrared Response in WSe2/WS2 Van Der Waals Heterostructure Photodetectors with Polarization and Self-Powered Effects
10.1002/adom.202403253 · 2025 · External reference
Self-powered Vs. high speed ZnO-based photodetectors
10.1016/j.materresbull.2022.111950 · 2022 · External reference
Electrical spectroscopy of defect states and their hybridization in monolayer MoS2
10.1038/s41467-022-35651-1 · 2023 · External reference
Chemical trends of deep levels in van der Waals semiconductors
10.1038/s41467-020-19247-1 · 2020 · External reference
In situ Raman study on sulfur vacancies in monolayer MoS2
10.1088/2053-1583/ae6b2b · 2026 · External reference
Poly(4-styrenesulfonate)-induced sulfur vacancy self-healing strategy for monolayer MoS2 homojunction photodiode
10.1038/ncomms15881 · 2017 · External reference
Dual-Mode Conversion of Photodetector and Neuromorphic Vision Sensor via Bias Voltage Regulation on a Single Device
10.1002/adma.202308090 · 2023 · External reference
Dual-Modal Optoelectronic Synaptic Devices with Versatile Synaptic Plasticity
10.1002/adfm.202107973 · 2021 · External reference
A dual-mode transparent device for 360° quasi-omnidirectional self-driven photodetection and efficient ultralow-power neuromorphic computing
10.1038/s41377-025-01991-y · 2025 · External reference
