Research graph
References from Decoupling Thermal and Electronic Effects of Metal Contacts in Bilayer MoS2 Transistors. Local targets link to admitted publications; unresolved targets remain external evidence.
The future transistors
10.1038/s41586-023-06145-x · 2023 · External reference
The future of two-dimensional semiconductors beyond Moore’s law
10.1038/s41565-024-01695-1 · 2024 · External reference
Promises and prospects of two-dimensional transistors
10.1038/s41586-021-03339-z · 2021 · External reference
Single-layer MoS2 transistors
10.1038/nnano.2010.279 · 2011 · External reference
How Good Can Monolayer MoS2 Transistors Be?
10.1021/nl2018178 · 2011 · External reference
MoS2 transistors with 1-nanometer gate lengths
10.1126/science.aah4698 · 2016 · External reference
Vertical MoS2 transistors with sub-1-nm gate lengths
10.1038/s41586-021-04323-3 · 2022 · External reference
Integrated Circuits Based on Bilayer MoS2 Transistors
10.1021/nl302015v · 2012 · External reference
Electrically Tunable Bandgaps in Bilayer MoS2
10.1021/acs.nanolett.5b03218 · 2015 · External reference
Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire
10.1038/s41586-022-04523-5 · 2022 · External reference
Transition metal dichalcogenides bilayer single crystals by reverse-flow chemical vapor epitaxy
10.1038/s41467-019-08468-8 · 2019 · External reference
Phase-engineered low-resistance contacts for ultrathin MoS2 transistors
10.1038/nmat4080 · 2014 · External reference
Ultralow contact resistance between semimetal and monolayer semiconductors
10.1038/s41586-021-03472-9 · 2021 · External reference
Yttrium-doping-induced metallization of molybdenum disulfide for ohmic contacts in two-dimensional transistors
10.1038/s41928-024-01176-2 · 2024 · External reference
Approaching the quantum limit in two-dimensional semiconductor contacts
10.1038/s41586-022-05431-4 · 2023 · External reference
All-2D CVD-grown semiconductor field-effect transistors with van der Waals graphene contacts
10.1038/s41699-024-00489-2 · 2024 · External reference
2D Cd metal contacts via low-temperature van der Waals epitaxy towards high-performance 2D transistors
10.1038/s41467-025-59174-7 · 2025 · External reference
Improving Contacts and Electrical Performances of Nanofilms of MoS2 Transistors through Ultrastrong vdW Integration with Dirac Semimetal PtTe2
10.1021/acsanm.2c05051 · 2023 · External reference
Electrical contacts to two-dimensional semiconductors
10.1038/nmat4452 · 2015 · External reference
Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors
10.1038/s41586-019-1052-3 · 2019 · External reference
Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition
10.1021/acs.nanolett.6b01309 · 2016 · External reference
Origins of genuine Ohmic van der Waals contact between indium and MoS2
10.1038/s41699-020-00191-z · 2021 · External reference
High-performance MoS2 transistors with low-resistance molybdenum contacts
10.1063/1.4866340 · 2014 · External reference
Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors
10.1103/physrevx.4.031005 · 2014 · External reference
Role of metal contacts in designing high-performance monolayer n-type WSe2 field effect transistors
10.1021/nl304777e · 2013 · External reference
Boosting bulk photovoltaic effect in transition metal dichalcogenide by edge semimetal contact
10.1038/s41377-024-01691-z · 2025 · External reference
Fundamental Understanding of Interface Chemistry and Electrical Contact Properties of Bi and MoS2
10.1021/acsami.4c10082 · 2024 · External reference
Contact engineering for temperature stability improvement of Bi-contacted MoS2 field effect transistors
10.1007/s11432-023-3942-2 · 2024 · External reference
Low-thermal-budget synthesis of monolayer molybdenum disulfide for silicon back-end-of-line integration on a 200 mm platform
10.1038/s41565-023-01375-6 · 2023 · External reference
Synthesis of Two-Dimensional MoS2 and WS2 Films by Enclosed Chemical Vapor Transport Method below the Back-End-of-Line Temperature
10.1021/acs.nanolett.5c04961 · 2026 · External reference
Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations
10.1038/srep21786 · 2016 · External reference
Analysis of electron beam damage of exfoliated MoS2 sheets and quantitative HAADF-STEM imaging
10.1016/j.ultramic.2014.05.004 · 2014 · External reference
Probing Functional Structures, Defects, and Interfaces of 2D Transition Metal Dichalcogenides by Electron Microscopy
10.1002/adfm.202307625 · 2024 · External reference
Direct evaporation of single-crystal metal contacts for 2D semiconductors
10.1126/science.aee3132 · 2026 · External reference
Metal Contacts on Physical Vapor Deposited Monolayer MoS2
10.1021/nn4052138 · 2013 · External reference
Uncovering the Effects of Metal Contacts on Monolayer MoS2
10.1021/acsnano.0c03515 · 2020 · External reference
High-performance ambipolar MoS2 transistor enabled by indium edge contacts
10.1088/1361-6528/abe438 · 2021 · External reference
MoS2–Titanium Contact Interface Reactions
10.1021/acsami.6b00275 · 2016 · External reference
Contact Metal–MoS2 Interfacial Reactions and Potential Implications on MoS2-Based Device Performance
10.1021/acs.jpcc.6b04473 · 2016 · External reference
Thermal Stability of Titanium Contacts to MoS2
10.1021/acsami.9b08829 · 2019 · External reference
Commensurate Palladium Adlayer Formation on 2H-MoS2(0001)
10.1021/acs.jpcc.5c02908 · 2025 · External reference
Investigation of Interface Interactions Between Monolayer MoS2 and Metals: Implications on Strain and Surface Roughness
10.1021/acs.langmuir.3c02740 · 2024 · External reference
The rise of semi-metal electronics
10.1038/s44287-024-00068-z · 2024 · External reference
Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides
10.1021/acsnano.6b07159 · 2017 · External reference
A Fermi-Level-Pinning-Free 1D Electrical Contact at the Intrinsic 2D MoS2-Metal Junction
10.1002/adma.201808231 · 2019 · External reference
Schottky barrier heights for Au and Pd contacts to MoS2
10.1063/1.4895767 · 2014 · External reference
High Performance Multilayer MoS2 Transistors with Scandium Contacts
10.1021/nl303583v · 2013 · External reference
Toward Barrier Free Contact to Molybdenum Disulfide Using Graphene Electrodes
10.1021/nl504957p · 2015 · External reference
Intrinsic Electrical Transport and Performance Projections of Synthetic Monolayer MoS2 Devices
10.1088/2053-1583/4/1/011009 · 2017 · External reference
200-mm-wafer-scale integration of polycrystalline molybdenum disulfide transistors
10.1038/s41928-024-01158-4 · 2024 · External reference
Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films
10.1021/nl400778q · 2013 · External reference
Low Variability in Synthetic Monolayer MoS2 Devices
10.1021/acsnano.7b04100 · 2017 · External reference
Ultra-low power consumption flexible sensing electronics by dendritic bilayer MoS2
10.1002/inf2.12605 · 2024 · External reference
Making clean electrical contacts on 2D transition metal dichalcogenides
10.1038/s42254-021-00389-0 · 2021 · External reference
Interaction- and defect-free van der Waals contacts between metals and two-dimensional semiconductors
10.1038/s41928-022-00746-6 · 2022 · External reference
Transferred van der Waals metal electrodes for sub-1-nm MoS2 vertical transistors
10.1038/s41928-021-00566-0 · 2021 · External reference
Unipolar p-type monolayer WSe2 field-effect transistors with high current density and low contact resistance enabled by van der Waals contacts
10.1007/s12274-024-6942-5 · 2024 · External reference
