Research graph
References from Diameter-Dependent Photoresponse and Surface Effects in Top-Down Fabricated GaN p−n Nanowire Photodetectors. Local targets link to admitted publications; unresolved targets remain external evidence.
A Review of III−V Nanowire Infrared Photodetectors and Sensors
10.1088/1361-6463/aa5ab3 · 2017 · External reference
Nanowire Photodetectors Based on Wurtzite Semiconductor Heterostructures
10.1088/1361-6641/ab0cb8 · 2019 · External reference
Low-Dimensional Wide-Bandgap Semiconductors for UV Photodetectors
10.1038/s41578-023-00583-9 · 2023 · External reference
Review on III−V Semiconductor Nanowire Array Infrared Photodetectors
10.1002/admt.202202126 · 2023 · External reference
Low-Dimensional Nanostructure Ultraviolet Photodetectors
10.1002/adma.201301802 · 2013 · External reference
GaN and AlGaN/AlN Nanowire Ensembles for Ultraviolet Photodetectors: Effects of Planarization with Hydrogen Silsesquioxane and Nanowire Architecture
10.1021/acsanm.3c01496 · 2023 · External reference
A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures
10.3390/s130810482 · 2013 · External reference
III−V Nanowire Arrays: Growth and Light Interaction
10.1088/0957-4484/25/1/014015 · 2014 · External reference
The Generalized Shockley-Queisser Limit for Nanostructured Solar Cells
10.1038/srep13536 · 2015 · External reference
Wide-Bandgap Semiconductor Ultraviolet Photodetectors
10.1088/0268-1242/18/4/201 · 2003 · External reference
Ultrafast, Superhigh Gain Visible-Blind UV Detector and Optical Logic Gates Based on Nonpolar a-Axial GaN Nanowire
10.1039/c4nr03581j · 2014 · External reference
Ultrahigh Photocurrent Gain in M-Axial GaN Nanowires
10.1063/1.2817595 · 2007 · External reference
Ultrasensitive and Highly Selective Photodetections of UV-A Rays Based on Individual Bicrystalline GaN Nanowire
10.1021/acsami.6b14907 · 2017 · External reference
Room-Temperature Photodetection Dynamics of Single GaN Nanowires
10.1021/nl2032684 · 2012 · External reference
Comparison of CVD- and MBE-Grown GaN Nanowires: Crystallinity, Photoluminescence, and Photoconductivity
10.1007/s11664-014-3457-y · 2014 · External reference
Effect of the Nanowire Diameter on the Linearity of the Response of GaN-Based Heterostructured Nanowire Photodetectors
10.1088/1361-6528/aab838 · 2018 · External reference
Size-Dependent Photoconductivity in MBE-Grown GaN−Nanowires
10.1021/nl0500306 · 2005 · External reference
Environmental Sensitivity of n-i-n and Undoped Single GaN Nanowire Photodetectors
10.1063/1.4808017 · 2013 · External reference
Steady-State and Transient Photoconductivity in c-Axis GaN Nanowires Grown by Nitrogen-Plasma-Assisted Molecular Beam Epitaxy
10.1063/1.3275888 · 2010 · External reference
Ultraviolet Photodetector Based on Single GaN Nanorod p−n Junctions
10.1016/j.msec.2005.09.089 · 2006 · External reference
Effect of Bias on the Response of GaN Axial p−n Junction Single-Nanowire Photodetectors
10.1021/acs.nanolett.9b02040 · 2019 · External reference
Catalytic Growth of Nanowires: Vapor−Liquid−Solid, Vapor−Solid−Solid, Solution−Liquid−Solid and Solid−Liquid−Solid Growth
10.1016/j.cossms.2007.03.002 · 2006 · External reference
Nucleation Mechanisms of Epitaxial GaN Nanowires: Origin of Their Self-Induced Formation and Initial Radius
10.1103/physrevb.81.085310 · 2010 · External reference
Assessment of AlGaN/AlN Superlattices on GaN Nanowires as Active Region of Electron-Pumped Ultraviolet Sources
10.1088/1361-6528/ab704d · 2020 · External reference
Single GaN-Based Nanowires for Photodetection and Sensing Applications
10.7567/jjap.52.11ng01 · 2013 · External reference
Si Donor Incorporation in GaN Nanowires
10.1021/acs.nanolett.5b02634 · 2015 · External reference
Dopant Radial Inhomogeneity in Mg-Doped GaN Nanowires
10.1088/1361-6528/aabbd6 · 2018 · External reference
Realization of Electrically Driven AlGaN Micropillar Array Deep-Ultraviolet Light Emitting Diodes at 286 Nm
10.1063/5.0061381 · 2021 · External reference
Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication
10.1021/acs.nanolett.5b04949 · 2016 · External reference
A Route for the Top-down Fabrication of Ordered Ultrathin GaN Nanowires
10.1088/1361-6528/acb949 · 2023 · External reference
Optical Performance of Top-Down Fabricated AlGaN Nanorod Arrays with Multi-Quantum Wells Embedded
10.1186/s11671-019-3003-1 · 2019 · External reference
Effect of KOH Passivation for Top-down Fabricated InGaN Nanowire Light Emitting Diodes
10.1063/1.5123171 · 2019 · External reference
Fabrication of GaN Nanorods by Inductively Coupled Plasma Etching via SiO2 Nanosphere Lithography
10.1016/j.tsf.2009.01.144 · 2009 · External reference
Optical Performance of Top-down Fabricated InGaN/GaN Nanorod Light Emitting Diode Arrays
10.1364/oe.19.025528 · 2011 · External reference
10.3390/proceedings1040309
10.3390/proceedings1040309 · External reference
Fabrication of Nanopillars by Nanosphere Lithography
10.1088/0957-4484/17/5/028 · 2006 · External reference
Vertical GaN Nanowires and Nanoscale Light-Emitting-Diode Arrays for Lighting and Sensing Applications
10.1021/acsanm.9b00587 · 2019 · External reference
Effect of the Fabrication Parameters of the Nanosphere Lithography Method on the Properties of the Deposited Au-Ag Nanoparticle Arrays
10.3390/ma10040381 · 2017 · External reference
GaN Single Nanowire p−i−n Diode for High-Temperature Operations
10.1021/acsaelm.9b00801 · 2020 · External reference
High-Aspect-Ratio GaN p − i − n Nanowires for Linear UV Photodetectors
10.1021/acsanm.3c01495 · 2023 · External reference
Correlated and In-Situ Electrical Transmission Electron Microscopy Studies and Related Membrane-Chip Fabrication
10.1088/1361-6528/ab99f0 · 2020 · External reference
10.1109/nano61778.2024.10628950
10.1109/nano61778.2024.10628950 · External reference
High In-Content InGaN Layers Synthesized by Plasma-Assisted Molecular-Beam Epitaxy: Growth Conditions, Strain Relaxation, and In Incorporation Kinetics
10.1063/1.4903944 · 2014 · External reference
Bias-Controlled Spectral Response in GaN/AlN Single-Nanowire Ultraviolet Photodetectors
10.1021/acs.nanolett.7b01118 · 2017 · External reference
Comprehensive Analyses of Core−Shell InGaN/GaN Single Nanowire Photodiodes
10.1088/1361-6463/aa935d · 2017 · External reference
Strong Geometrical Dependence of the Absorption of Light in Arrays of Semiconductor Nanowires
10.1021/nn103596n · 2011 · External reference
UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices
10.1021/acs.nanolett.6b00806 · 2016 · External reference
High Gain Single GaAs Nanowire Photodetector
10.1063/1.4816246 · 2013 · External reference
ZnO Nanowire UV Photodetectors with High Internal Gain
10.1021/nl070111x · 2007 · External reference
A CuO Nanowire Infrared Photodetector
10.1016/j.sna.2011.09.011 · 2011 · External reference
Axial p−n Junction and Space Charge Limited Current in Single GaN Nanowire
10.1088/1361-6528/aa9a0e · 2017 · External reference
A High-Responsivity GaN Nanowire UV Photodetector
10.1109/jstqe.2010.2060715 · 2011 · External reference
Low-Dimensional Nanostructure Ultraviolet Photodetectors
10.1002/adma.201301802 · ExternalCitation · doi-reference
Review on III−V Semiconductor Nanowire Array Infrared Photodetectors
10.1002/admt.202202126 · ExternalCitation · doi-reference
Comparison of CVD- and MBE-Grown GaN Nanowires: Crystallinity, Photoluminescence, and Photoconductivity
10.1007/s11664-014-3457-y · ExternalCitation · doi-reference
Catalytic Growth of Nanowires: Vapor−Liquid−Solid, Vapor−Solid−Solid, Solution−Liquid−Solid and Solid−Liquid−Solid Growth
10.1016/j.cossms.2007.03.002 · ExternalCitation · doi-reference
Ultraviolet Photodetector Based on Single GaN Nanorod p−n Junctions
10.1016/j.msec.2005.09.089 · ExternalCitation · doi-reference
A CuO Nanowire Infrared Photodetector
10.1016/j.sna.2011.09.011 · ExternalCitation · doi-reference
Fabrication of GaN Nanorods by Inductively Coupled Plasma Etching via SiO2 Nanosphere Lithography
10.1016/j.tsf.2009.01.144 · ExternalCitation · doi-reference
Si Donor Incorporation in GaN Nanowires
10.1021/acs.nanolett.5b02634 · ExternalCitation · doi-reference
Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication
10.1021/acs.nanolett.5b04949 · ExternalCitation · doi-reference
UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices
10.1021/acs.nanolett.6b00806 · ExternalCitation · doi-reference
Bias-Controlled Spectral Response in GaN/AlN Single-Nanowire Ultraviolet Photodetectors
10.1021/acs.nanolett.7b01118 · ExternalCitation · doi-reference
Effect of Bias on the Response of GaN Axial p−n Junction Single-Nanowire Photodetectors
10.1021/acs.nanolett.9b02040 · ExternalCitation · doi-reference
GaN Single Nanowire p−i−n Diode for High-Temperature Operations
10.1021/acsaelm.9b00801 · ExternalCitation · doi-reference
Ultrasensitive and Highly Selective Photodetections of UV-A Rays Based on Individual Bicrystalline GaN Nanowire
10.1021/acsami.6b14907 · ExternalCitation · doi-reference
High-Aspect-Ratio GaN p − i − n Nanowires for Linear UV Photodetectors
10.1021/acsanm.3c01495 · ExternalCitation · doi-reference
GaN and AlGaN/AlN Nanowire Ensembles for Ultraviolet Photodetectors: Effects of Planarization with Hydrogen Silsesquioxane and Nanowire Architecture
10.1021/acsanm.3c01496 · ExternalCitation · doi-reference
Vertical GaN Nanowires and Nanoscale Light-Emitting-Diode Arrays for Lighting and Sensing Applications
10.1021/acsanm.9b00587 · ExternalCitation · doi-reference
Size-Dependent Photoconductivity in MBE-Grown GaN−Nanowires
10.1021/nl0500306 · ExternalCitation · doi-reference
ZnO Nanowire UV Photodetectors with High Internal Gain
10.1021/nl070111x · ExternalCitation · doi-reference
Room-Temperature Photodetection Dynamics of Single GaN Nanowires
10.1021/nl2032684 · ExternalCitation · doi-reference
Strong Geometrical Dependence of the Absorption of Light in Arrays of Semiconductor Nanowires
10.1021/nn103596n · ExternalCitation · doi-reference
Low-Dimensional Wide-Bandgap Semiconductors for UV Photodetectors
10.1038/s41578-023-00583-9 · ExternalCitation · doi-reference
The Generalized Shockley-Queisser Limit for Nanostructured Solar Cells
10.1038/srep13536 · ExternalCitation · doi-reference
Ultrafast, Superhigh Gain Visible-Blind UV Detector and Optical Logic Gates Based on Nonpolar a-Axial GaN Nanowire
10.1039/c4nr03581j · ExternalCitation · doi-reference
Ultrahigh Photocurrent Gain in M-Axial GaN Nanowires
10.1063/1.2817595 · ExternalCitation · doi-reference
Steady-State and Transient Photoconductivity in c-Axis GaN Nanowires Grown by Nitrogen-Plasma-Assisted Molecular Beam Epitaxy
10.1063/1.3275888 · ExternalCitation · doi-reference
Environmental Sensitivity of n-i-n and Undoped Single GaN Nanowire Photodetectors
10.1063/1.4808017 · ExternalCitation · doi-reference
High Gain Single GaAs Nanowire Photodetector
10.1063/1.4816246 · ExternalCitation · doi-reference
High In-Content InGaN Layers Synthesized by Plasma-Assisted Molecular-Beam Epitaxy: Growth Conditions, Strain Relaxation, and In Incorporation Kinetics
10.1063/1.4903944 · ExternalCitation · doi-reference
Effect of KOH Passivation for Top-down Fabricated InGaN Nanowire Light Emitting Diodes
10.1063/1.5123171 · ExternalCitation · doi-reference
Realization of Electrically Driven AlGaN Micropillar Array Deep-Ultraviolet Light Emitting Diodes at 286 Nm
10.1063/5.0061381 · ExternalCitation · doi-reference
Wide-Bandgap Semiconductor Ultraviolet Photodetectors
10.1088/0268-1242/18/4/201 · ExternalCitation · doi-reference
Fabrication of Nanopillars by Nanosphere Lithography
10.1088/0957-4484/17/5/028 · ExternalCitation · doi-reference
III−V Nanowire Arrays: Growth and Light Interaction
10.1088/0957-4484/25/1/014015 · ExternalCitation · doi-reference
A Review of III−V Nanowire Infrared Photodetectors and Sensors
10.1088/1361-6463/aa5ab3 · ExternalCitation · doi-reference
Comprehensive Analyses of Core−Shell InGaN/GaN Single Nanowire Photodiodes
10.1088/1361-6463/aa935d · ExternalCitation · doi-reference
Axial p−n Junction and Space Charge Limited Current in Single GaN Nanowire
10.1088/1361-6528/aa9a0e · ExternalCitation · doi-reference
Effect of the Nanowire Diameter on the Linearity of the Response of GaN-Based Heterostructured Nanowire Photodetectors
10.1088/1361-6528/aab838 · ExternalCitation · doi-reference
Dopant Radial Inhomogeneity in Mg-Doped GaN Nanowires
10.1088/1361-6528/aabbd6 · ExternalCitation · doi-reference
Assessment of AlGaN/AlN Superlattices on GaN Nanowires as Active Region of Electron-Pumped Ultraviolet Sources
10.1088/1361-6528/ab704d · ExternalCitation · doi-reference
Correlated and In-Situ Electrical Transmission Electron Microscopy Studies and Related Membrane-Chip Fabrication
10.1088/1361-6528/ab99f0 · ExternalCitation · doi-reference
A Route for the Top-down Fabrication of Ordered Ultrathin GaN Nanowires
10.1088/1361-6528/acb949 · ExternalCitation · doi-reference
Nanowire Photodetectors Based on Wurtzite Semiconductor Heterostructures
10.1088/1361-6641/ab0cb8 · ExternalCitation · doi-reference
Nucleation Mechanisms of Epitaxial GaN Nanowires: Origin of Their Self-Induced Formation and Initial Radius
10.1103/physrevb.81.085310 · ExternalCitation · doi-reference
A High-Responsivity GaN Nanowire UV Photodetector
10.1109/jstqe.2010.2060715 · ExternalCitation · doi-reference
10.1109/nano61778.2024.10628950
10.1109/nano61778.2024.10628950 · ExternalCitation · doi-reference
Optical Performance of Top-Down Fabricated AlGaN Nanorod Arrays with Multi-Quantum Wells Embedded
10.1186/s11671-019-3003-1 · ExternalCitation · doi-reference
Optical Performance of Top-down Fabricated InGaN/GaN Nanorod Light Emitting Diode Arrays
10.1364/oe.19.025528 · ExternalCitation · doi-reference
Effect of the Fabrication Parameters of the Nanosphere Lithography Method on the Properties of the Deposited Au-Ag Nanoparticle Arrays
10.3390/ma10040381 · ExternalCitation · doi-reference
10.3390/proceedings1040309
10.3390/proceedings1040309 · ExternalCitation · doi-reference
A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures
10.3390/s130810482 · ExternalCitation · doi-reference
Single GaN-Based Nanowires for Photodetection and Sensing Applications
10.7567/jjap.52.11ng01 · ExternalCitation · doi-reference
