Research graph
References from Gate-Tunable Ambipolar Rubrene/WSe2 Polarization-Sensitive Photodetectors. Local targets link to admitted publications; unresolved targets remain external evidence.
Recent Progress in Emerging Organic Semiconductors
10.1002/adma.202108701 · 2022 · External reference
Self-Powered Organic Phototransistors with Asymmetrical van der Waals Stacking for Flexible Image Sensors
10.1021/acsphotonics.3c00737 · 2023 · External reference
Ultrafast and Stable Organic Single-Crystal Vertical Phototransistor for Self-Powered Photodetection and High-Speed Imaging
10.1002/aelm.202201097 · 2023 · External reference
The Bulk Heterojunction in Organic Photovoltaic, Photodetector, and Photocatalytic Applications
10.1002/adma.202001763 · 2020 · External reference
Enabling a High-Sensitivity and Fast-Response Organic Phototransistor Based on an Embedded Heterojunction toward Broadband High-Speed Imaging
10.1021/acs.cgd.3c01402 · 2024 · External reference
Metal-organic chemical vapour deposition for 2D chalcogenides
10.1038/s43586-025-00429-4 · 2025 · External reference
Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides
10.1038/nphoton.2015.282 · 2016 · External reference
Paper based organic-inorganic hybrid photodetector for visible light detection
10.1016/j.apsusc.2020.146589 · 2020 · External reference
Diazapentalene-Containing Ultralow-Band-Gap Copolymers for High-Performance Near-Infrared Organic Phototransistors
10.1021/acs.chemmater.1c02409 · 2021 · External reference
Simultaneous Photomultiplication Improvement and Response Acceleration for High-Performance Lateral Polymer Photodetectors Based on Bulk Heterojunction
10.1021/acsami.0c18581 · 2021 · External reference
High-Performance Air-Stable 2D-WSe2/P3HT Based Inorganic−Organic Hybrid Photodetector with Broadband Visible to Near-IR Light Detection
10.1002/aelm.202300514 · 2023 · External reference
Effectively Enhanced Broadband Phototransistors Based on Multilayer WSe2/Pentacene
10.1002/aelm.202100003 · 2021 · External reference
Flexible near-infrared polarized photodetector based on CuPc single crystal grown by microspacing in-air sublimation
10.1039/d3tc03016d · 2023 · External reference
Field effect studies on rubrene and impurities of rubrene
10.1021/cm0502626 · 2006 · External reference
Intrinsic Linear Dichroism of Organic Single Crystals toward High-Performance Polarization-Sensitive Photodetectors
10.1002/adma.202105665 · 2022 · External reference
Organic Semiconductor Single Crystals for Electronics and Photonics
10.1002/adma.201801048 · 2018 · External reference
Raman and Photoluminescence Properties of Red and Yellow Rubrene Crystals
10.1021/jp5032338 · 2014 · External reference
Direct imaging of anisotropic exciton diffusion and triplet diffusion length in rubrene single crystals
10.1103/physrevlett.107.017402 · 2011 · External reference
Microspacing In-Air Sublimation Growth of Organic Crystals
10.1021/acs.chemmater.7b04170 · 2018 · External reference
Band Structure Engineering of WSe2 Homo-Junction Interfaces via Thickness Control
10.1002/admi.202101763 · 2022 · External reference
High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
10.1021/nl301702r · 2012 · External reference
High-performance p-type bilayer WSe2 field effect transistors by nitric oxide doping
10.1038/s41467-025-59684-4 · 2025 · External reference
The ambipolar transport behavior of WSe2 transistors and its analogue circuits
10.1038/s41427-018-0062-1 · 2018 · External reference
Thickness-dependent energy level alignment of rubrene adsorbed on Au (111)
10.1063/1.2719033 · 2007 · External reference
Effect of Facile p-Doping on Electrical and Optoelectronic Characteristics of Ambipolar WSe2 Field-Effect Transistors
10.1186/s11671-019-3137-1 · 2019 · External reference
Gate-Tunable Junctions within Monolayer MoS2−WS2 Lateral Heterostructures
10.1021/acsanm.2c03932 · 2022 · External reference
Band Alignment at GaN/Single-Layer WSe2 Interface
10.1021/acsami.6b15370 · 2017 · External reference
Type-II Bi2O2Se/MoTe2 van der Waals Heterostructure Photodetectors with High Gate-Modulation Photovoltaic Performance
10.1021/acsami.3c01807 · 2023 · External reference
Ultrahigh-Sensitive Broadband Photodetectors Based on Dielectric Shielded MoTe2/Graphene/SnS2 p-g-n Junctions
10.1002/adma.201805656 · 2019 · External reference
Photodetectors based on graphene, other two-dimensional materials and hybrid systems
10.1038/nnano.2014.215 · 2014 · External reference
Infrared Photodetectors Based on SnS2 for Silicon Photonic Integrated Circuits
10.1021/acsphotonics.5c00213 · 2025 · External reference
Enhanced Performance of an Au/MoS2/GaAs Photodetector by Room-Temperature Metal Electrode Transfer
10.3390/nano16100624 · 2026 · External reference
High-performance optoelectronic devices based on p-type selenium-alloyed tellurium oxide semiconductors
10.1063/5.0308006 · 2026 · External reference
WSe2 Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing
10.1002/smll.201902770 · 2019 · External reference
Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics
10.1038/ncomms5458 · 2014 · External reference
FerroelectricallyModulated and Enhanced Photoresponse in a Self-Powered α-In2Se3/Si Heterojunction Photodetector
10.1021/acsnano.2c11925 · 2023 · External reference
Dual-gate organic phototransistor with high-gain and linear photoresponse
10.1038/s41467-018-06907-6 · 2018 · External reference
Design optimization of mutual dissolution layer and diffusion interface layer in planar heterojunction near-infrared organic phototransistors for ultrahigh photosensitivity
10.1039/d5ra05574a · 2025 · External reference
Ultrafast, Broadband Photodetector Based on MoSe2/Silicon Heterojunction with Vertically Standing Layered Structure Using Graphene as Transparent Electrode
10.1002/advs.201600018 · 2016 · External reference
Self-Powered, Broadband Photodetector Based on Two-Dimensional Tellurium-Silicon Heterojunction
10.1021/acsomega.2c06589 · 2022 · External reference
High-responsivity InSe/TaSe2 photodetectors integrated on low-loss silicon nitride waveguides
10.1039/d5na00119f · 2025 · External reference
2D Programmable Photodetectors Based on WSe2/h-BN/Graphene Heterojunctions
10.1002/advs.202417300 · 2025 · External reference
Solution-Processable Van Der Waals Heterojunctions on Silicon for Self-Powered Photodetectors with High Responsivity and Detectivity
10.1002/advs.202500027 · 2025 · External reference
High-Performance Gate-Voltage-Tunable Photodiodes Based on Nb2Pd3Se8/WSe2 Mixed-Dimensional Heterojunctions
10.1021/acsami.4c09682 · 2024 · External reference
High Performance Balanced Linear Polarization Photodetector Based on 2D ReS2
10.1002/lpor.202400661 · 2024 · External reference
Highly In-Plane Anisotropic 2D PdSe2 for Polarized Photodetection with Orientation Selectivity
10.1002/adfm.202006774 · 2021 · External reference
Unveiling the invisible: Polarization-sensitive ferroelectricphotomemristorsfor enhanced image recognition
10.26599/nr.2025.94908019 · 2026 · External reference
Observation of long-range exciton diffusion in highly ordered organic semiconductors
10.1038/nmat2872 · 2010 · External reference
Absorption and photoluminescence spectroscopy of rubrene single crystals
10.1103/physrevb.86.085143 · 2012 · External reference
Highly In-Plane Anisotropic 2D PdSe2 for Polarized Photodetection with Orientation Selectivity
10.1002/adfm.202006774 · ExternalCitation · doi-reference
Organic Semiconductor Single Crystals for Electronics and Photonics
10.1002/adma.201801048 · ExternalCitation · doi-reference
Ultrahigh-Sensitive Broadband Photodetectors Based on Dielectric Shielded MoTe2/Graphene/SnS2 p-g-n Junctions
10.1002/adma.201805656 · ExternalCitation · doi-reference
The Bulk Heterojunction in Organic Photovoltaic, Photodetector, and Photocatalytic Applications
10.1002/adma.202001763 · ExternalCitation · doi-reference
Intrinsic Linear Dichroism of Organic Single Crystals toward High-Performance Polarization-Sensitive Photodetectors
10.1002/adma.202105665 · ExternalCitation · doi-reference
Recent Progress in Emerging Organic Semiconductors
10.1002/adma.202108701 · ExternalCitation · doi-reference
Band Structure Engineering of WSe2 Homo-Junction Interfaces via Thickness Control
10.1002/admi.202101763 · ExternalCitation · doi-reference
Ultrafast, Broadband Photodetector Based on MoSe2/Silicon Heterojunction with Vertically Standing Layered Structure Using Graphene as Transparent Electrode
10.1002/advs.201600018 · ExternalCitation · doi-reference
2D Programmable Photodetectors Based on WSe2/h-BN/Graphene Heterojunctions
10.1002/advs.202417300 · ExternalCitation · doi-reference
Solution-Processable Van Der Waals Heterojunctions on Silicon for Self-Powered Photodetectors with High Responsivity and Detectivity
10.1002/advs.202500027 · ExternalCitation · doi-reference
Effectively Enhanced Broadband Phototransistors Based on Multilayer WSe2/Pentacene
10.1002/aelm.202100003 · ExternalCitation · doi-reference
Ultrafast and Stable Organic Single-Crystal Vertical Phototransistor for Self-Powered Photodetection and High-Speed Imaging
10.1002/aelm.202201097 · ExternalCitation · doi-reference
High-Performance Air-Stable 2D-WSe2/P3HT Based Inorganic−Organic Hybrid Photodetector with Broadband Visible to Near-IR Light Detection
10.1002/aelm.202300514 · ExternalCitation · doi-reference
High Performance Balanced Linear Polarization Photodetector Based on 2D ReS2
10.1002/lpor.202400661 · ExternalCitation · doi-reference
WSe2 Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing
10.1002/smll.201902770 · ExternalCitation · doi-reference
Paper based organic-inorganic hybrid photodetector for visible light detection
10.1016/j.apsusc.2020.146589 · ExternalCitation · doi-reference
Enabling a High-Sensitivity and Fast-Response Organic Phototransistor Based on an Embedded Heterojunction toward Broadband High-Speed Imaging
10.1021/acs.cgd.3c01402 · ExternalCitation · doi-reference
Diazapentalene-Containing Ultralow-Band-Gap Copolymers for High-Performance Near-Infrared Organic Phototransistors
10.1021/acs.chemmater.1c02409 · ExternalCitation · doi-reference
Microspacing In-Air Sublimation Growth of Organic Crystals
10.1021/acs.chemmater.7b04170 · ExternalCitation · doi-reference
Simultaneous Photomultiplication Improvement and Response Acceleration for High-Performance Lateral Polymer Photodetectors Based on Bulk Heterojunction
10.1021/acsami.0c18581 · ExternalCitation · doi-reference
Type-II Bi2O2Se/MoTe2 van der Waals Heterostructure Photodetectors with High Gate-Modulation Photovoltaic Performance
10.1021/acsami.3c01807 · ExternalCitation · doi-reference
High-Performance Gate-Voltage-Tunable Photodiodes Based on Nb2Pd3Se8/WSe2 Mixed-Dimensional Heterojunctions
10.1021/acsami.4c09682 · ExternalCitation · doi-reference
Band Alignment at GaN/Single-Layer WSe2 Interface
10.1021/acsami.6b15370 · ExternalCitation · doi-reference
Gate-Tunable Junctions within Monolayer MoS2−WS2 Lateral Heterostructures
10.1021/acsanm.2c03932 · ExternalCitation · doi-reference
FerroelectricallyModulated and Enhanced Photoresponse in a Self-Powered α-In2Se3/Si Heterojunction Photodetector
10.1021/acsnano.2c11925 · ExternalCitation · doi-reference
Self-Powered, Broadband Photodetector Based on Two-Dimensional Tellurium-Silicon Heterojunction
10.1021/acsomega.2c06589 · ExternalCitation · doi-reference
Self-Powered Organic Phototransistors with Asymmetrical van der Waals Stacking for Flexible Image Sensors
10.1021/acsphotonics.3c00737 · ExternalCitation · doi-reference
Infrared Photodetectors Based on SnS2 for Silicon Photonic Integrated Circuits
10.1021/acsphotonics.5c00213 · ExternalCitation · doi-reference
Field effect studies on rubrene and impurities of rubrene
10.1021/cm0502626 · ExternalCitation · doi-reference
Raman and Photoluminescence Properties of Red and Yellow Rubrene Crystals
10.1021/jp5032338 · ExternalCitation · doi-reference
High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
10.1021/nl301702r · ExternalCitation · doi-reference
Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics
10.1038/ncomms5458 · ExternalCitation · doi-reference
Observation of long-range exciton diffusion in highly ordered organic semiconductors
10.1038/nmat2872 · ExternalCitation · doi-reference
Photodetectors based on graphene, other two-dimensional materials and hybrid systems
10.1038/nnano.2014.215 · ExternalCitation · doi-reference
Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides
10.1038/nphoton.2015.282 · ExternalCitation · doi-reference
The ambipolar transport behavior of WSe2 transistors and its analogue circuits
10.1038/s41427-018-0062-1 · ExternalCitation · doi-reference
Dual-gate organic phototransistor with high-gain and linear photoresponse
10.1038/s41467-018-06907-6 · ExternalCitation · doi-reference
High-performance p-type bilayer WSe2 field effect transistors by nitric oxide doping
10.1038/s41467-025-59684-4 · ExternalCitation · doi-reference
Metal-organic chemical vapour deposition for 2D chalcogenides
10.1038/s43586-025-00429-4 · ExternalCitation · doi-reference
Flexible near-infrared polarized photodetector based on CuPc single crystal grown by microspacing in-air sublimation
10.1039/d3tc03016d · ExternalCitation · doi-reference
High-responsivity InSe/TaSe2 photodetectors integrated on low-loss silicon nitride waveguides
10.1039/d5na00119f · ExternalCitation · doi-reference
Design optimization of mutual dissolution layer and diffusion interface layer in planar heterojunction near-infrared organic phototransistors for ultrahigh photosensitivity
10.1039/d5ra05574a · ExternalCitation · doi-reference
Thickness-dependent energy level alignment of rubrene adsorbed on Au (111)
10.1063/1.2719033 · ExternalCitation · doi-reference
High-performance optoelectronic devices based on p-type selenium-alloyed tellurium oxide semiconductors
10.1063/5.0308006 · ExternalCitation · doi-reference
Absorption and photoluminescence spectroscopy of rubrene single crystals
10.1103/physrevb.86.085143 · ExternalCitation · doi-reference
Direct imaging of anisotropic exciton diffusion and triplet diffusion length in rubrene single crystals
10.1103/physrevlett.107.017402 · ExternalCitation · doi-reference
Effect of Facile p-Doping on Electrical and Optoelectronic Characteristics of Ambipolar WSe2 Field-Effect Transistors
10.1186/s11671-019-3137-1 · ExternalCitation · doi-reference
Unveiling the invisible: Polarization-sensitive ferroelectricphotomemristorsfor enhanced image recognition
10.26599/nr.2025.94908019 · ExternalCitation · doi-reference
Enhanced Performance of an Au/MoS2/GaAs Photodetector by Room-Temperature Metal Electrode Transfer
10.3390/nano16100624 · ExternalCitation · doi-reference
