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References from Decoupled Channel and Contact Modulation in α-In2Se3/ZrO2/Hf0.5Zr0.5O2 Dual-Ferroelectric Field-Effect Transistor. Local targets link to admitted publications; unresolved targets remain external evidence.
Single-layer MoS2 transistors
10.1038/nnano.2010.279 · 2011 · External reference
1,000,000 On/Off Ratio in Sub-1 nm Channel Length Carbon Nanotube/Monolayer MoS2/Carbon Nanotube Vertical Transistors
10.1021/acsnano.5c04746 · 2025 · External reference
Current Rectification in a Sub-2 nm CNT/V-Doped WS2 /MoS 2 /CNT Vertical Monolayer P–N Diode
10.1021/acsnano.5c13793 · 2026 · External reference
High–Performance Polarity–Reconfigurable Transistor and Photodiode via Asymmetric Transferred Schottky and Evaporated Ohmic Contacts
10.1002/adfm.202527192 · 2026 · External reference
Dual-Ferroelectric-Coupling-Engineered Two-Dimensional Transistors for Multifunctional In-Memory Computing
10.1021/acsnano.2c00079 · 2022 · External reference
Multimodal 2D ferroelectric transistor with integrated perception-and-computing-in-memory functions for reservoir computing
10.1021/acs.nanolett.4c05071 · 2024 · External reference
Ferroelectric order in van der Waals layered materials
10.1038/s41578-022-00484-3 · 2023 · External reference
Taking a RISC on new materials with old concepts
10.1038/s41928-019-0335-x · 2019 · External reference
Ferroelectric Field-Effect-Transistor Integrated with Ferroelectrics Heterostructure
10.1002/advs.202200566 · 2022 · External reference
A van der Waals Synaptic Transistor Based on Ferroelectric Hf0.5Zr0.5O2 and 2D Tungsten Disulfide
10.1002/aelm.202000057 · 2020 · External reference
Ferroelectricity in hafnium oxide thin films
10.1063/1.3634052 · 2011 · External reference
The future of ferroelectric field-effect transistor technology
10.1038/s41928-020-00492-7 · 2020 · External reference
Low Voltage Operating 2D MoS(2) Ferroelectric Memory Transistor with Hf(1-x)Zr(x)O(2) Gate Structure
10.1186/s11671-020-03384-z · 2020 · External reference
Prediction of intrinsic two-dimensional ferroelectrics in In(2)Se(3) and other III(2)-VI(3) van der Waals materials
10.1038/ncomms14956 · 2017 · External reference
Out-of-Plane Piezoelectricity and Ferroelectricity in Layered alpha-In(2)Se(3) Nanoflakes
10.1021/acs.nanolett.7b02198 · 2017 · External reference
Optical control of ferroelectric switching and multifunctional devices based on van der Waals ferroelectric semiconductors
10.1039/d0nr06872a · 2020 · External reference
Orthogonal Electric Control of the Out-Of-Plane Field-Effect in 2D Ferroelectric α-In2Se3
10.1002/aelm.202000061 · 2020 · External reference
Intercorrelated In-Plane and Out-of-Plane Ferroelectricity in Ultrathin Two-Dimensional Layered Semiconductor In(2)Se(3)
10.1021/acs.nanolett.7b04852 · 2018 · External reference
Bottom Contact 100 nm Channel-Length alpha-In(2) Se(3) In-Plane Ferroelectric Memory
10.1002/advs.202303032 · 2023 · External reference
Ferro-floating memory: Dual-mode ferroelectric floating memory and its application to in-memory computing
10.1002/inf2.12367 · 2022 · External reference
The Integration of Two-Dimensional Materials and Ferroelectrics for Device Applications
10.1021/acsnano.3c05711 · 2024 · External reference
Ultralow contact resistance between semimetal and monolayer semiconductors
10.1038/s41586-021-03472-9 · 2021 · External reference
Electrical contacts to two-dimensional semiconductors
10.1038/nmat4452 · 2015 · External reference
Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors
10.1038/s41586-019-1052-3 · 2019 · External reference
Contact engineering for 2D materials and devices
10.1039/c7cs00828g · 2018 · External reference
α-In2Se3 based ferroelectric-semiconductor metal junction for non-volatile memories
10.1063/5.0021395 · 2020 · External reference
First Implementation of Edge-Contacted alpha-In(2)Se(3) Ferroelectric Semiconductor Field-Effect Transistors and their Application to Artificial Heterosynapse
10.1002/smll.202504842 · 2025 · External reference
Low-Temperature Ohmic Contact to Monolayer MoS(2) by van der Waals Bonded Co/h-BN Electrodes
10.1021/acs.nanolett.7b01536 · 2017 · External reference
Thousands of conductance levels in memristors integrated on CMOS
10.1038/s41586-023-05759-5 · 2023 · External reference
8-bit states in 2D floating-gate memories using gate-injection mode for large-scale convolutional neural networks
10.1038/s41467-025-58005-z · 2025 · External reference
Effect of Zr Content on the Wake-Up Effect in Hf1-xZrxO2 Films
10.1021/acsami.6b03586 · 2016 · External reference
Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature
10.1063/1.4811483 · 2013 · External reference
Atomic-Level Stoichiometry Control of Ferroelectric Hf(x)Zr(y)O(z) Thin Films by Understanding Molecular-Level Chemical Physical Reactions
10.1021/acsnano.4c13595 · 2025 · External reference
Phases in HfO2-Based Ferroelectric Thin Films and Their Integration in Low-Power Devices
10.1021/acsaelm.2c01513 · 2023 · External reference
Atomic Layer Deposition of Epitaxial Ferroelectric Hf0.5Zr0.5O2 Thin Films
10.1002/adfm.202314396 · 2024 · External reference
Interface-engineered ferroelectricity of epitaxial Hf(0.5)Zr(0.5)O(2) thin films
10.1038/s41467-023-37560-3 · 2023 · External reference
Ferroelectric freestanding hafnia membranes with metastable rhombohedral structure down to 1-nm-thick
10.1038/s41467-024-49055-w · 2024 · External reference
First Direct Measurement of Sub-Nanosecond Polarization Switching in Ferroelectric Hafnium Zirconium Oxide
10.1109/iedm19573.2019.8993509 · 2019 · External reference
A ferroelectric semiconductor field-effect transistor
10.1038/s41928-019-0338-7 · 2019 · External reference
Multi-neuron connection using multi-terminal floating–gate memristor for unsupervised learning
10.1038/s41467-023-38667-3 · 2023 · External reference