References

Electric Field Effect in Atomically Thin Carbon Films

10.1126/science.1102896 · 2004 · External reference

Single-Layer MoS2 Phototransistors

10.1021/nn2024557 · 2012 · External reference

Disorder Engineering and Conductivity Dome in ReS2 with Electrolyte Gating

10.1038/ncomms12391 · 2016 · External reference

Optical Property of the Near Band-Edge Transitions in Rhenium Disulfide and Diselenide

10.1016/j.jallcom.2004.04.011 · 2004 · External reference

Rolling up MoSe2 Nanomembranes as a Sensitive Tubular Photodetector

10.1002/smll.201902528 · 2019 · External reference

Lateral 2D WSe2 p–n Homojunction Formed by Efficient Charge-Carrier-Type Modulation for High-Performance Optoelectronics

10.1002/adma.201906499 · 2020 · External reference

Crystal Structure and Electronic Structure of GaSe1–xSx Series Layered Solids

10.1016/j.jcrysgro.2005.02.042 · 2005 · External reference

Red-to-Ultraviolet Emission Tuning of Two-Dimensional Gallium Sulfide/Selenide

10.1021/acsnano.5b04876 · 2015 · External reference

Optical Properties of GaSe1–xSx Series Layered Semiconductors Grown by Vertical Bridgman Method

10.1016/j.matchemphys.2004.07.011 · 2004 · External reference

Thickness-dependent Carrier Transport and Optically Enhanced Transconductance Gain in III-VI Multilayer InSe

10.1088/2053-1583/3/2/025019 · 2016 · External reference

Solution-processable 2D Semiconductors for High-performance Large-area Electronics

10.1038/s41586-018-0574-4 · 2018 · External reference

Two-dimensional Flexible Nanoelectronics

10.1038/ncomms6678 · 2014 · External reference

Curvature-dependent Flexible Light Emission from Layered Gallium Selenide Crystals

10.1039/c7ra11600d · 2018 · External reference

Flexible Device Applications of 2D Semiconductors

10.1002/smll.201603994 · 2017 · External reference

Toward the Growth of High Mobility 2D Transition Metal Dichalcogenide Semiconductors

10.1002/admi.201900220 · 2019 · External reference

High-Mobility InSe Transistors: The Role of Surface Oxides

10.1021/acsnano.7b03531 · 2017 · External reference

High Mobilities in Layered InSe Transistors with Indium-Encapsulation-Induced Surface Charge Doping

10.1002/adma.201803690 · 2018 · External reference

Complete-series Excitonic Dipole Emissions in Few Layer ReS2 and ReSe2 Observed by Polarized Photoluminescence Spectroscopy

10.1016/j.nanoen.2018.12.014 · 2019 · External reference

Photoreflectance Study of the Excitonic Transitions of Rhenium Disulphide Layer Compounds

10.1103/physrevb.66.245207 · 2002 · External reference

Atomically Thin MoS2: A New Direct-Gap Semiconductor

10.1103/physrevlett.105.136805 · 2010 · External reference

A Unified Understanding of the Thickness-Dependent Bandgap Transition in Hexagonal Two-Dimensional Semiconductors

10.1021/acs.jpclett.5b02687 · 2016 · External reference

Tuning the Bandgap of Exfoliated InSe Nanosheets by Quantum Confinement

10.1002/adma.201302616 · 2013 · External reference

Visible Luminescence and Structural Property of GaSe1–xSx (0≤x≤1) Series Layered Crystals

10.1016/j.ssc.2005.09.029 · 2005 · External reference

Bending Photoluminescence and Surface Photovoltaic Effect on Multilayer InSe 2D Microplate Crystals

10.1002/adom.201500390 · 2015 · External reference

Optical Properties of Ga2Se3:Co2+ Single Crystals

10.1016/0038-1098(89)90639-x · 1989 · External reference

Photoelectric Properties of Ga2Se3 Single Crystals

10.1088/0022-3727/29/3/057 · 1996 · External reference

Über die Kristallstrukturen von Ga2S3, Ga2Se3 und Ga2Te3

10.1002/zaac.19492590111 · 1949 · External reference

The Crystal Structure of β-Ga2Se3

10.1016/0022-4596(82)90250-x · 1982 · External reference

Investigation of the Polymorphism of Ga2Se3 Selenide of Variable Composition

1965 · External reference

Growth and Characterization of Ga2Se3/GaAs(100) Epitaxial Thin Films

10.1016/s0022-0248(99)00359-0 · 1999 · External reference

Optically Decomposed Near-band-edge Structure and Excitonic transitions in Ga2S3

10.1038/srep06143 · 2015 · External reference

Synthesis and Phase Evolutions in Layered Structure of Ga2S3 Semiconductor Thin Films on Epiready GaAs (111) Substrates

10.1021/am4056535 · 2014 · External reference

GaAsSe Ternary Alloy Nanowires for Enhanced Photoconductivity

10.1021/acs.jpcc.8b11652 · 2019 · External reference

Structural and Electronic Properties of Ga2Se3

10.1063/1.367066 · 1998 · External reference

Preparation and Characterization of Ni-incorporated FeS2 Single Crystals

10.1016/j.jcrysgro.2004.07.017 · 2004 · External reference

Electronic Structure and E1 Excitons of CuInS2 Energy-Related Crystals Studied by Temperature-Dependent Thermoreflectance Spectroscopy

10.1149/1.3270434 · 2010 · External reference

Nanowire Grid Polarization and Polarized Excitonic Emission Observed in Multilayer GaTe

10.1021/acs.jpclett.9b03569 · 2020 · External reference

Lattice dynamics of tetrahedrally bonded semiconductors containing ordered vacant sites

10.1103/physrevb.11.3785 · 1975 · External reference

Vibrational Studies of Copper Thiogallate Solid Solutions

10.1016/s0921-5107(98)00418-8 · 1999 · External reference

Etude Vibrationnelle de α-Ga2S3

10.1016/0584-8539(78)80181-0 · 1978 · External reference

Raman Spectroscopic Analysis on the Solubility Mechanism of La3+ in GeS2–Ga2S3 Glasses

10.1016/s0022-3093(98)00577-8 · 1998 · External reference

Thermoreflectance Characterization of β-Ga2O3 Thin-film Nanostrips

10.1364/oe.18.016360 · 2010 · External reference

Characterization of Indirect and Direct Interband Transitions of Anatase TiO2 by Thermoreflectance Spectroscopy

10.1063/1.2975846 · 2008 · External reference

Modulation Spectroscopy/Electric Field Effects on the Dielectric Fuction of Semiconductors

1980 · External reference

Two Phases of Ga2S3: Promising Infrared Second-order Nonlinear Optical Materials with Very High Laser Induced Damage Thresholds

10.1039/c3tc30808a · 2013 · External reference

Temperature Dependence of the Energy Gap in Semiconductors

10.1016/0031-8914(67)90062-6 · 1967 · External reference

Temperature-dependent Photoconductivity in β-In2S3 Single Crystals

10.1063/1.3478719 · 2010 · External reference

Optical Characterization of Band-Edge Property of In6S7 Compound

10.1063/1.3698334 · 2012 · External reference

Ultraefficient Ultraviolet and Visible Light Sensing and Ohmic Contacts in High-Mobility InSe Nanoflake Photodetectors Fabricated by the Focused Ion Beam Technique

10.1021/acsami.7b15106 · 2018 · External reference

Enhancing Responsivity and Detectivity in Broadband UV–VIS Photodetector by Ex-situ UV–ozone Annealing Technique

10.1016/j.spmi.2019.106333 · 2020 · External reference

Gate-tunable Optoelectronic Properties of a Nano-layered GaSe Photodetector

10.1364/ome.7.000587 · 2017 · External reference

Synthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors

10.1021/nn300889c · 2012 · External reference

Nonlayered Two-Dimensional Defective Semiconductor γ-Ga2S3 toward Broadband Photodetection

10.1021/acsnano.9b00276 · 2019 · External reference

Epitaxial Synthesis of Ultrathin β-In2Se3/MoS2 Heterostructures with High Visible/Near-infrared Photoresponse

10.1039/c9nr10387b · 2020 · External reference

High-Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self-assembled Monolayer Doping

10.1002/adfm.201501170 · 2015 · External reference