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References from Fabrication of Nanocrystalline Silicon Thin Films Utilized for Optoelectronic Devices Prepared by Thermal Vacuum Evaporation. Local targets link to admitted publications; unresolved targets remain external evidence.
Materials for photovoltaics: State of art and recent developments
10.3390/ijms20040976 · 2019 · External reference
Laser Processing of Polysilicon Thin-Film Transistors: Grain Growth and Device Fabrication
10.1002/(sici)1521-396x(199804)166:2<729::aid-pssa729>3.0.co;2-1 · 1998 · External reference
Polycrystalline silicon thin films by aluminum induced crystallization of amorphous silicon
10.1016/j.apsusc.2012.09.019 · 2013 · External reference
On the controlling mechanism of preferential orientation of polycrystalline-silicon thin films grown by aluminum-induced crystallization
10.1143/apex.3.095803 · 2010 · External reference
In-situ X-ray diffraction study of metal induced crystallization of amorphous silicon
10.1016/j.tsf.2007.09.037 · 2008 · External reference
Polycrystalline silicon obtained by metal induced crystallization using different metals
10.1016/j.tsf.2003.10.124 · 2004 · External reference
Aluminium-induced crystallisation of silicon on glass for thin-film solar cells
10.1016/s0927-0248(00)00117-3 · 2001 · External reference
Depletion regions in the aluminum-induced layer exchange process crystallizing amorphous Si
10.1063/1.1996849 · 2005 · External reference
Single grain growth of Si thin film on insulating substrate by limited region aluminum induced crystallization
10.1016/j.matlet.2019.05.113 · 2019 · External reference
Textured (111) crystalline silicon thin film growth on flexible glass by e-beam evaporation
10.1016/j.matlet.2015.06.031 · 2015 · External reference
Aluminum induced crystallization of amorphous Si: Thermal annealing and ion irradiation process
10.1016/j.jnoncrysol.2019.119628 · 2019 · External reference
Raman Scattering in the Process of Tin-Induced Crystallization of Amorphous Silicon
10.15407/ujpe61.02.0143 · 2016 · External reference
Growth and optical properties of Sn–Si nanocomposite thin films
10.1007/s10853-012-6647-0 · 2012 · External reference
Electron-beam evaporated silicon as a top contact for molecular electronic device fabrication
10.1039/c1cp20755e · 2011 · External reference
Spectroscopic investigation of quantum confinement effects in ion implanted silicon-on-sapphire films
10.1007/s12633-009-9033-z · 2010 · External reference
P-type polycrystalline Si Films prepared by aluminum-induced crystallization and doping method
10.1143/jjap.40.2110 · 2001 · External reference
Formation of thin-film crystalline silicon on glass observed by in-situ XRD
10.1016/j.egypro.2010.07.034 · 2010 · External reference
Unresolved reference
External reference
Aluminum-Induced Crystallization of Hydrogenated Amorphous Silicon Thin Films With Assistance of Electric Field for Solar Photovoltaic Applications
10.1109/jdt.2015.2457892 · 2016 · External reference
Pressure-induced transitions in amorphous silicon and germanium
10.1051/jphyscol:1981437 · 1981 · External reference
Mössbauer spectroscopy of amorphous silicon–tin–hydrogen alloys
10.1063/1.332329 · 1983 · External reference
Pressure effects on the local atomic structure
1984 · External reference
Achieving direct band gap in germanium through integration of Sn alloying and external strain
10.1063/1.4792649 · 2013 · External reference
Aluminum-induced crystallization of amorphous silicon on glass substrates above and below the eutectic temperature
10.1063/1.122722 · 1998 · External reference
Features of polarized Raman spectra for homogeneous and non-homogeneous compressively strained Ge1–ySny alloys
10.1002/jrs.5160 · 2017 · External reference
Raman spectroscopy on SiO2 glasses sintered from nanosized particles
10.1016/s0022-3093(03)00172-8 · 2003 · External reference
Elucidation of the layer exchange mechanism in the formation of polycrystalline silicon by aluminum-induced crystallization
10.1063/1.373632 · 2000 · External reference
Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films
10.1063/1.2362877 · 2006 · External reference
Nucleation and growth kinetics during metal-induced layer exchange crystallization of Ge thin films at low temperatures
10.1063/1.3682110 · 2012 · External reference
Influence of melt depth in laser crystallized poly-Si thin film transistors
10.1063/1.365719 · 1997 · External reference
Pyramidal texturing of silicon solar cell with TMAH chemical anisotropic etching
10.1016/j.solmat.2006.03.005 · 2006 · External reference
Design and fabrication of broadband ultralow reflectivity black Si surfaces by laser micro/nanoprocessing
10.1038/lsa.2014.66 · 2014 · External reference
Ray-tracing of arbitrary surface textures for light-trapping in thin silicon solar cells
10.1016/s0927-0248(97)00116-5 · 1997 · External reference
High-Quality Polycrystalline Silicon Film Crystallized from Amorphous Silicon Film using NiCl2 Vapor
10.1149/2.039201jes · 2011 · External reference
Unresolved reference
External reference
Self-sustained cyclic tin induced crystallization of amorphous silicon
10.1557/jmr.2015.251 · 2015 · External reference
Polycrystalline silicon thin-films formed by the aluminum-induced layer exchange (ALILE) process
10.1007/978-3-642-02044-5_12 · 2009 · External reference
Electrical characterization of thin silicon films produced by metal-induced crystallization on insulating substrates by conductive AFM
10.1384/jsa.17.260 · 2011 · External reference
Lasing in direct-bandgap GeSn alloy grown on Si
10.1038/nphoton.2014.321 · 2015 · External reference
P-type polycrystalline Si Films prepared by aluminum-induced crystallization and doping method
10.1143/jjap.40.2110 · 2001 · External reference
Aluminium-induced crystallization of amorphous silicon films deposited by DC magnetron sputtering on glasses
10.1016/j.apsusc.2011.03.135 · 2011 · External reference
Effect of Se addition on optical and electrical properties of chalcogenide CdSSe thin films
10.1016/j.spmi.2015.10.044 · 2016 · External reference
Band-gap energy estimation from diffuse reflectance measurements on sol–gel and commercial TiO2: a comparative study
10.1007/s10971-011-2582-9 · 2012 · External reference
Indirect to direct band gap transition in ultra-thin silicon films
10.1039/c3cp50429h · 2013 · External reference
Crystalline silicon thin-film solar cells─recent results at Fraunhofer ISE
10.1016/j.solener.2004.08.021 · 2004 · External reference
Structure and optical properties of a-SiAl and a-SiAlH magnetron sputtered thin films
10.1063/1.4944506 · 2016 · External reference
Near-infrared light absorption by polycrystalline SiSn alloys grown on insulating layers
10.1063/1.4919451 · 2015 · External reference
Investigation of the chemical properties of stain films on silicon by means of infrared spectroscopy
10.1016/0039-6028(65)90002-6 · 1965 · External reference
Gas-Phase Vibrational Spectroscopy of the Aluminum Oxide Anions (Al2O3) 1–6AlO2
10.1002/cphc.201700336 · 2017 · External reference
Band structure and optical properties of silicon dioxide
10.1103/physrevlett.36.425 · 1976 · External reference
Deposition of a-Si, Sn: H alloy films by reactive magnetron sputtering from separate Si and Sn targets
10.1116/1.573910 · 1986 · External reference
Electrical properties of grain boundaries in polycrystalline compound semiconductors
10.1088/0268-1242/5/2/001 · 1990 · External reference
Atomic and Electronic Structures of Reconstructed Si(100) Surfaces
10.1103/physrevlett.43.43 · 1979 · External reference
Unresolved reference
2011 · External reference
BN/ZnO heterojunction diodes with apparently giant ideality factors
10.1063/1.3212987 · 2009 · External reference
Investigation of WO3/ZnO thin-film heterojunction-based Schottky diodes for H2 gas sensing
10.1016/j.ijhydene.2014.04.155 · 2014 · External reference
A new estimation approach for determining the I–V characteristics of solar cells
10.1016/j.solener.2011.04.013 · 2011 · External reference
Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide
10.1038/nnano.2014.25 · 2014 · External reference
Carrier generation and recombination in pn junctions and pn junction characteristics
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Dynamics of tunneling centers in metallic systems
10.1103/physrevb.52.7976 · 1995 · External reference
Silicon nanowire-based solar cells
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