Research graph
References from Single-Domain and Atomically Flat Surface of κ-Ga2O3 Thin Films on FZ-Grown ε-GaFeO3 Substrates via Step-Flow Growth Mode. Local targets link to admitted publications; unresolved targets remain external evidence.
A review of Ga2O3 materials, processing, and devices
10.1063/1.5006941 · 2018 · External reference
Recent progress in Ga2O3 power devices
10.1088/0268-1242/31/3/034001 · 2016 · External reference
Review of gallium-oxide-based solar-blind ultraviolet photodetectors
10.1364/prj.7.000381 · 2019 · External reference
Czochralski grown Ga2O3 crystals
10.1016/s0022-0248(00)00851-4 · 2000 · External reference
Large-size β-Ga2O3 single crystals and wafers
10.1016/j.jcrysgro.2004.06.027 · 2004 · External reference
High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth
10.7567/jjap.55.1202a2 · 2016 · External reference
Growth of β-Ga2O3 single crystals using vertical Bridgman method in ambient air
10.1016/j.jcrysgro.2016.04.022 · 2016 · External reference
2300V reverse breakdown voltage Ga2O3 Schottky rectifiers
10.1149/2.0241805jss · 2018 · External reference
1.85 kV Breakdown voltage in lateral field-plated Ga2O3 MOSFETs
10.1109/led.2018.2859049 · 2018 · External reference
Field-plated lateral Ga2O3 MOSFETs with polymer passivation and 8.03 kV breakdown voltage
10.1109/led.2020.2991146 · 2020 · External reference
Vertical solar-blind deep-ultraviolet schottky photodetectors based on β-Ga2O3 Substrates
10.1143/apex.1.011202 · 2008 · External reference
High-performance single crystalline UV photodetectors of β-Ga2O3
10.1016/j.jallcom.2014.09.070 · 2015 · External reference
Czochralski growth and characterization of β-Ga2O3 single crystals
10.1002/crat.201000341 · 2010 · External reference
Donors and deep acceptors in β-Ga2O3
10.1063/1.5034474 · 2018 · External reference
First-principles study on electronic structure and optical properties of Sn-doped β-Ga2O3
10.1016/j.physb.2010.06.024 · 2010 · External reference
Demonstration of β-(AlxGa1-x)2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy
10.7567/apex.10.071101 · 2017 · External reference
Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor
10.1063/1.4993569 · 2017 · External reference
Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures
10.1063/1.5025704 · 2018 · External reference
Crystal structure and ferroelectric properties of ε-Ga2O3 films grown on (0001)-sapphire
10.1021/acs.inorgchem.6b02244 · 2016 · External reference
Use of mist chemical vapor deposition to impart ferroelectric properties to ε-Ga2O3 thin films on SnO2/c-sapphire substrates
10.1016/j.matlet.2018.08.082 · 2018 · External reference
Phase diagram and polarization of stable phases of (Ga1-xInx)2O3
10.7567/apex.9.041102 · 2016 · External reference
First-principle calculations of electronic structures and polar properties of (κ,ϵ)-Ga2O3
10.7567/apex.11.061101 · 2018 · External reference
Highly tunable, polarization-engineered two-dimensional electron gas in ε-AlGaO3/ε-Ga2O3 heterostructures
10.35848/1882-0786/ab9168 · 2020 · External reference
Epitaxial growth of phase-pure ε-Ga2O3 by halide vapor phase epitaxy
10.1063/1.4929417 · 2015 · External reference
HVPE Growth and Characterization of ε-Ga2O3 Films on Various Substrates
10.1149/2162-8777/ab8b4c · 2020 · External reference
Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD
10.1016/j.jcrysgro.2016.03.013 · 2016 · External reference
HCl flow-induced phase change of α-, β-, and ε-Ga2O3 films grown by MOCVD
10.1021/acs.cgd.7b01791 · 2018 · External reference
Growth pressure controlled nucleation epitaxy of pure phase ε- and β-Ga2O3 films on Al2O3 via metal-organic chemical vapor deposition
10.1021/acs.cgd.7b01576 · 2018 · External reference
ε-Ga2O3 epilayers as a material for solar-blind UV photodetectors. Mater
2018 · External reference
Heteroepitaxial growth of ε-Ga2O3 thin films on cubic (111) MgO and (111) yttria-stabilized zirconia substrates by mist chemical vapor deposition
10.7567/jjap.55.1202bc · 2016 · External reference
Heteroepitaxial growth of single-phase ε-Ga2O3 thin films on c-plane sapphire by mist chemical vapor deposition using a NiO buffer layer
10.1039/c8ce01128a · 2018 · External reference
High-κ dielectric ε-Ga2O3 stabilized in a transparent heteroepitaxial structure grown by mist CVD at atmospheric pressure
10.1039/c9ce01532a · 2020 · External reference
Phase control of α- and κ-Ga2O3 epitaxial growth on LiNbO3 and LiTaO3 substrates using α-Fe2O3 buffer layers
10.1063/5.0006137 · 2020 · External reference
Incorporation of indium into ε-gallium oxide epitaxial thin films grown: Via mist chemical vapour deposition for bandgap engineering
10.1039/c7ce02103h · 2018 · External reference
Heteroepitaxial growth of ε-(AlxGa1-x)2O3 alloy films on c -plane AlN templates by mist chemical vapor deposition
10.1063/1.5021296 · 2018 · External reference
Stabilization and enhanced energy gap by Mg doping in ε-phase Ga2O3 thin films
10.1063/1.5022600 · 2018 · External reference
Tin-Assisted Synthesis of ε-Ga2O3 by Molecular Beam Epitaxy
10.1103/physrevapplied.8.054002 · 2017 · External reference
Tin-assisted heteroepitaxial PLD-growth of κ -Ga2O3 thin films with high crystalline quality
10.1063/1.5054378 · 2019 · External reference
Epitaxial stabilization of single phase κ-(InxGa1- x)2O3 thin films up to x = 0.28 on c-sapphire and κ-Ga2O3(001) templates by tin-assisted VCCS-PLD
10.1063/1.5120578 · 2019 · External reference
Structural, optical, and electrical properties of orthorhombic κ-(InxGa1-x)2O3 thin films
10.1063/1.5054394 · 2019 · External reference
Epitaxial κ-(AlxGa1-x)2O3 thin films and heterostructures grown by tin-assisted VCCS-PLD
10.1063/1.5124231 · 2019 · External reference
Solubility limit and material properties of a κ-(AlxGa1-x)2O3 thin film with a lateral cation gradient on (00.1)Al2O3 by tin-assisted PLD
10.1063/1.5141041 · 2020 · External reference
Metal-Exchange Catalysis in the Growth of Sesquioxides: Towards Heterostructures of Transparent Oxide Semiconductors
10.1103/physrevlett.119.196001 · 2017 · External reference
Ga2O3 polymorphs: tailoring the epitaxial growth conditions
10.1039/d0tc02743j · 2020 · External reference
The real structure of ε-Ga2O3 and its relation to κ-phase
10.1039/c7ce00123a · 2017 · External reference
Microstructures and rotational domains in orthorhombic ε-Ga2O3 thin films
10.7567/jjap.57.115601 · 2018 · External reference
Structural and magnetoelectric properties of Ga2-xFexO3 single crystals grown by a floating-zone method
10.1103/physrevb.70.064426 · 2004 · External reference
Electrical, magnetic, magnetodielectric, and magnetoabsorption studies in multiferroic GaFeO3
10.1063/1.3271391 · 2009 · External reference
