Research graph
References from Investigation of Boron Distribution at the SiO2/Si Interface of Monolayer Doping. Local targets link to admitted publications; unresolved targets remain external evidence.
Controlled Nanoscale Doping of Semiconductors via Molecular Monolayers
10.1038/nmat2058 · 2008 · External reference
Wafer-Scale, Sub-5 Nm Junction Formation by Monolayer Doping and Conventional Spike Annealing
10.1021/nl8032526 · 2009 · External reference
Boosting the Boron Dopant Level in Monolayer Doping by Carboranes
10.1021/acsami.5b08952 · 2015 · External reference
Controlling the Dopant Dose in Silicon by Mixed-Monolayer Doping
10.1021/am5079368 · 2015 · External reference
Boron Monolayer Doping: Role of Oxide Capping Layer, Molecular Fragmentation, and Doping Uniformity at the Nanoscale
10.1002/admi.201902198 · 2020 · External reference
Full Activation of Boron in Silicon Doped by Self-Assembled Molecular Monolayers
10.1021/acsaelm.9b00748 · 2020 · External reference
A Low-Temperature Microwave Anneal Process for Boron-Doped Ultrathin Ge Epilayer on Si Substrate
10.1109/led.2008.2009474 · 2009 · External reference
Unresolved reference
External reference
Amorphous-Layer Regrowth and Activation of P and as Implanted Si by Low-Temperature Microwave Annealing
10.1109/ted.2011.2132801 · 2011 · External reference
10.1109/essderc.2008.4681719
10.1109/essderc.2008.4681719 · External reference
10.1109/iit.1999.812042
10.1109/iit.1999.812042 · External reference
Ultra-Shallow P+/N Junction Formation in Si Using Low Temperature Solid Phase Epitaxy Assisted with Laser Activation
10.1063/1.3033688 · 2008 · External reference
Approaches to USJ Formation beyond Molecular Implantation
10.1063/1.3033646 · 2008 · External reference
Ultrashallow (<10 Nm)p +/n Junction Formed by B 18H 22 Cluster Ion Implantation and Excimer Laser Annealing
10.1063/1.2405863 · 2006 · External reference
USJ Process Challenges for Sub-45 Nm CMOS
10.1063/1.3033683 · 2008 · External reference
Basic Aspects of the Formation and Activation of Boron Junctions Using Plasma Immersion Ion Implantation
10.1063/1.3033662 · 2008 · External reference
10.1109/iedm.2014.7047158
10.1109/iedm.2014.7047158 · External reference
10.1109/iedm.2015.7409638
10.1109/iedm.2015.7409638 · External reference
Doping of Semiconductors by Molecular Monolayers: Monolayer Formation, Dopant Diffusion and Applications
10.1016/j.mssp.2016.12.018 · 2017 · External reference
Improved Method for the Preparation of Organic Monolayers of 1-Alkenes on Hydrogen-Terminated Silicon Surfaces
10.1021/la9904962 · 1999 · External reference
