Research graph
References from Band-to-Band Tunneling by Monte Carlo Simulation for Prediction of MOSFET Gate-Induced Drain Leakage Current. Local targets link to admitted publications; unresolved targets remain external evidence.
10.1109/16.119011
10.1109/16.119011 · 1991 · External reference
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10.1109/16.796296
10.1109/16.796296 · 1999 · External reference
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10.1049/el:19960538
10.1049/el:19960538 · 1996 · External reference
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10.1016/0038-1101(94)90163-5
10.1016/0038-1101(94)90163-5 · 1994 · External reference
10.1103/physrevd.49.1039
10.1103/physrevd.49.1039 · 1994 · External reference
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10.1109/vlsit.1996.507782
10.1109/vlsit.1996.507782 · External reference
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