Research graph
References from Enhancement of the optical and spin properties of silicon vacancies in proton-implanted 4H-SiC via femtosecond laser annealing. Local targets link to admitted publications; unresolved targets remain external evidence.
Micro-nanoscale laser subsurface vertical modification of 4H-SiC semiconductor materials: Mechanisms, processes, and challenges
10.1186/s11671-025-04309-4 · 2025 · External reference
Dislocations in 4H-SiC epilayers for power devices: Identification, formation, and regulation
10.1016/j.mssp.2024.109147 · 2025 · External reference
Synthesis and properties of silicon carbide (review)
10.15330/pcss.24.1.5-16 · 2023 · External reference
Optically active point defects in 4H-SiC: Identification of microscopic mechanisms and prospects for quantum applications
10.1002/adfm.202526154 · 2025 · External reference
Material platforms for spin-based photonic quantum technologies
10.1038/s41578-018-0008-9 · 2018 · External reference
Colloquium: Decoherence of solid-state spin qubits: A computational perspective
10.1103/revmodphys.97.021001 · 2025 · External reference
Nitrogen-vacancy centers in diamond: Nanoscale sensors for physics and biology
10.1146/annurev-physchem-040513-103659 · 2014 · External reference
Loophole-free bell inequality violation using electron spins separated by 1.3 kilometres
10.1038/nature15759 · 2015 · External reference
Coherent control of nitrogen-vacancy center spins in silicon carbide at room temperature
10.1103/physrevlett.124.223601 · 2020 · External reference
Fabrication and quantum sensing of spin defects in silicon carbide
10.3389/fphy.2023.1270602 · 2023 · External reference
Quantum sensing with duplex qubits of silicon vacancy centers in SiC at room temperature
10.1038/s41534-025-01011-2 · 2025 · External reference
Room temperature coherent spin alignment of silicon vacancies in 4H- and 6H-SiC
10.1103/physrevlett.108.226402 · 2012 · External reference
Electron spin coherence of silicon vacancies in proton-irradiated 4H-SiC
10.1103/physrevb.95.045206 · 2017 · External reference
Developing silicon carbide for quantum spintronics
10.1063/5.0004454 · 2020 · External reference
Quantum systems in silicon carbide for sensing applications
10.1088/1361-6633/ad10b3 · 2023 · External reference
The silicon vacancy centers in SiC: Determination of intrinsic spin dynamics for integrated quantum photonics
10.1038/s41534-024-00861-6 · 2024 · External reference
Spin and optical properties of silicon vacancies in silicon carbide—A review
10.1002/pssb.201700258 · 2018 · External reference
Magnetic detection under high pressures using designed silicon vacancy centres in silicon carbide
10.1038/s41563-023-01477-5 · 2023 · External reference
Thermometric quantum sensor using excited state of silicon vacancy centers in 4H-SiC devices
10.1063/5.0027603 · 2021 · External reference
Silicon carbide based quantum networking
10.1016/j.fmre.2020.11.004 · 2021 · External reference
Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide
10.1038/s41467-020-16330-5 · 2020 · External reference
Selective generation of V2 silicon vacancy centers in 4H-Silicon carbide
10.1021/acs.nanolett.3c03905 · 2024 · External reference
Silicon vacancy color centers in 6H-SiC fabricated by femtosecond laser direct writing
10.1007/s41871-023-00186-6 · 2023 · External reference
Color centers enabled by direct femto-second laser writing in wide bandgap semiconductors
10.3390/nano11010072 · 2020 · External reference
Defects in silicon carbide as quantum qubits: Recent advances in defect engineering
10.3390/app15105606 · 2025 · External reference
Laser writing of scalable single color centers in silicon carbide
10.1021/acs.nanolett.8b05070 · 2019 · External reference
Ultrafast laser-annealing of perovskite films for efficient perovskite solar cells
10.1039/c9ee02324k · 2020 · External reference
Laser annealing in Si and Ge: Anomalous physical aspects and modeling approaches
10.1016/j.mssp.2016.10.047 · 2017 · External reference
Unresolved reference
2014 · External reference
Giant enhancement of phonon–electron coupling in graphene under femtosecond laser heating at room temperature
10.1088/1361-6463/ade9d3 · 2025 · External reference
A review of femtosecond laser processing for sapphire
10.3390/ma19010206 · 2026 · External reference
A review on ultrashort pulse laser welding technology
10.1002/adom.202501852 · 2025 · External reference
Laser-annealing and solid-phase epitaxy of selenium thin-film solar cells
10.1021/acsaem.3c01464 · 2023 · External reference
Ferroelectric orthorhombic ZrO2 thin films achieved through nanosecond laser annealing
10.1002/advs.202207390 · 2023 · External reference
Direct writing of high-density nitrogen-vacancy centers inside diamond by femtosecond laser irradiation
10.1063/5.0049953 · 2021 · External reference
Enhancement of fluorescence collection efficiency of silicon carbide color center via femtosecond laser fabrication of internal micro-optical structures
10.1016/j.optlastec.2025.112661 · 2025 · External reference
Divacancy and silicon vacancy color centers in 4H-SiC fabricated by hydrogen and dual ions implantation and annealing
10.1016/j.ceramint.2022.10.219 · 2023 · External reference
Femtosecond laser controllable annealing for color centers based on ion-implanted silicon carbide substrate
10.1016/j.ceramint.2024.09.009 · 2024 · External reference
Controlled generation of intrinsic near-infrared color centers in 4H-SiC via proton irradiation and annealing
10.1063/1.5045859 · 2018 · External reference
Prediction of temperature-dependent stress in 4H-SiC using in situ nondestructive Raman spectroscopy characterization
10.1002/lpor.202401033 · 2025 · External reference
Detection of magnetic field polarity with magnetic field modulation ODMR on NV− centers in diamond
10.1016/j.apmt.2025.102762 · 2025 · External reference
Experimental progress on quantum coherence: Detection, quantification, and manipulation
10.1002/qute.202100040 · 2021 · External reference
