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References from High-performance mid-infrared InP-based quantum cascade lasers monolithically integrated onto silicon. Local targets link to admitted publications; unresolved targets remain external evidence.
InP-based quantum cascade lasers monolithically integrated onto silicon
10.1364/oe.26.022389 · 2018 · External reference
Quantum cascade laser on silicon
10.1364/optica.3.000545 · 2016 · External reference
Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates
10.1038/s41377-022-00850-4 · 2022 · External reference
Quantum cascade lasers grown on silicon
10.1038/s41598-018-24723-2 · 2018 · External reference
Growth of III–V semiconductors and lasers on silicon substrates by MOCVD
2019 · External reference
Polar-on-nonpolar epitaxy
10.1016/0022-0248(87)90391-5 · 1987 · External reference
Crystal phase control during epitaxial hybridization of III-V semiconductors with silicon
10.1002/aelm.202100777 · 2022 · External reference
Room temperature operation of quantum cascade lasers monolithically integrated onto a lattice-mismatched substrate
10.1063/1.5012503 · 2018 · External reference
High power mid-infrared quantum cascade lasers grown on Si
10.3390/photonics9090626 · 2022 · External reference
High power, room temperature InP-based quantum cascade laser grown on Si
10.1109/jqe.2022.3212052 · 2022 · External reference
Room temperature, continuous wave quantum cascade laser grown directly on a Si wafer
10.1109/jqe.2023.3282710 · 2023 · External reference
High peak power quantum cascade lasers monolithically integrated onto silicon with high yield and good near-term reliability
10.1063/5.0149072 · 2023 · External reference
Epitaxial-material characterization data for InP-based quantum cascade lasers grown on silicon substrate
2024 · External reference
High-power mid-infrared (λ∼3–6 μm) quantum cascade lasers
10.1109/jphot.2021.3132261 · 2022 · External reference
Metal-organic chemical vapor deposition of single domain GaAs on Ge/GexSi1−x/Si and Ge substrates
10.1063/1.372227 · 2000 · External reference
Power scaling and experimentally fitted model for broad area quantum cascade lasers in continuous wave operation
10.1117/1.oe.57.1.011011 · 2017 · External reference
High brightness operation in broad area quantum cascade lasers with reduced number of stages
2019 · External reference
Continuous wave quantum cascade lasers with reduced number of stages
10.1109/lpt.2017.2722039 · 2017 · External reference
Overview of cathodoluminescence (CL) spectroscopy
10.1007/978-3-031-19722-2_4 · 2023 · External reference
Wafer-scale analysis of GaN substrate wafer by imaging cathodoluminescence
10.7567/1882-0786/ab0db8 · 2019 · External reference
Unresolved reference
1985 · External reference
Imaging nonradiative point defects buried in quantum wells using cathodoluminescence
10.1021/acs.nanolett.1c01295 · 2021 · External reference
Optoelectronic material analysis and device failure analysis using SEM cathodoluminescence
10.1016/0026-2714(94)90504-5 · 1994 · External reference
Spatially-resolved cathodoluminescence spectroscopy of ZnO defects
10.1016/j.mssp.2016.10.032 · 2017 · External reference
Cathodoluminescence-integrated electron microscopy for failure analysis of long-wave ridge waveguide quantum cascade lasers
10.1063/5.0293899 · 2025 · External reference
CASINO: A new Monte Carlo code in C language for electron beam interaction—Part I: Description of the program
10.1002/sca.4950190101 · 1997 · External reference
Antiphase boundary free InP microridges on (001) silicon by selective area heteroepitaxy
10.1021/acs.cgd.0c00988 · 2020 · External reference
