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References from Modeling Si ion implantation-induced damage in β -Ga2O3 using Monte Carlo simulations. Local targets link to admitted publications; unresolved targets remain external evidence.
MgO (100) as an affordable support for heteroepitaxial growth of high-quality β-Ga2O3 thin films and related highly-sensitive solar-blind UV photodetectors
10.1016/j.apsusc.2023.157641 · 2023 · External reference
Deep UV transparent conductive Si-doped Ga2O3 thin films grown on Al2O3 substrates
10.1063/5.0147004 · 2023 · External reference
Enhancing the electron mobility in Si-doped (010) β-Ga2O3 films with low-temperature buffer layers
10.1063/5.0137666 · 2023 · External reference
Si-implanted β-Ga2O3/CuGaO2 p-n junction for high-performance self-powered UV photodetection
10.1016/j.jallcom.2024.178022 · 2025 · External reference
MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties
10.1063/1.5109678 · 2019 · External reference
Unintentional doping effect in Si-doped MOCVD β-Ga2O3 films: Shallow donor states
10.1007/s40843-022-2167-x · 2023 · External reference
Impurity band conduction in Si-doped β-Ga2O3 films
10.1063/5.0031481 · 2021 · External reference
The role of annealing ambient on diffusion of implanted Si in β-Ga2O3
10.1063/1.5115149 · 2019 · External reference
High-responsivity solar-blind photodetectors formed by Ga2O3/p-GaN bipolar heterojunctions
10.1021/acsphotonics.1c01892 · 2022 · External reference
Cathodoluminescence study of damage formation and recovery in Si-ion-implanted β-Ga2O3
10.1109/jeds.2021.3134407 · 2022 · External reference
Atomic scale defect formation and phase transformation in Si implanted β-Ga2O3
10.1063/5.0134467 · 2023 · External reference
SRIM – The stopping and range of ions in matter
10.1016/j.nimb.2010.02.091 · 2010 · External reference
On the use of SRIM for computing radiation damage exposure
10.1016/j.nimb.2013.05.008 · 2013 · External reference
SRIM simulation of irradiation damage by protons in InAs/GaSb type-II superlattices
10.1007/s40042-022-00689-3 · 2023 · External reference
Study of energy loss, range, and stopping time for proton in germanium and copper materials
10.1515/eng-2022-0576 · 2024 · External reference
Electronic cross section, stopping power and energy-loss straggling of metals for swift protons, alpha particles and electrons
10.3389/fmats.2023.1249517 · 2023 · External reference
Monte-Carlo-based simulation study of ion-implantation in gallium oxide devices
10.1002/sia.7145 · 2022 · External reference
Effects of 3 MeV proton irradiations on AlGaN/GaN high electron mobility transistors
10.7498/aps.61.057202 · 2012 · External reference
