Research graph
References from Nonlinear selectorless memory technologies for high-density storage and beyond-von-Neumann computing: a review. Local targets link to admitted publications; unresolved targets remain external evidence.
First demonstration of masked polynomial multiplier based on 40nm 1TG1R RRAM secure chip for lattice-based cryptography
10.1109/iedm50854.2024.10873494 · 2024 · External reference
First demonstration of unclonable double encryption 28nm RRAM-based compute-in-memory macro for confidential AI
10.1109/iedm50854.2024.10873366 · 2024 · External reference
High-density multilevel 3D vertical resistive switching memory (VRRAM) for massively parallel in-memory computing
10.1109/iedm50854.2024.10873537 · 2024 · External reference
Edge continual training and inference with RRAM-gain cell memory integrated on Si CMOS
10.1109/iedm50854.2024.10873546 · 2024 · External reference
Memristive crossbar arrays for brain-inspired computing
10.1038/s41563-019-0291-x · 2019 · External reference
Three-dimensional memristor circuits as complex neural networks
10.1038/s41928-020-0397-9 · 2020 · External reference
1T1R and 2T0C1R IGZO-MoS2 All-BEOL 3D memory cells
10.1109/iedm50854.2024.10873575 · 2024 · External reference
BEOL-compatible bilayer reprogrammable one-time programmable memory for low-voltage operation
10.1109/ted.2023.3237508 · 2023 · External reference
Memristive nanodevices: CMOS compatibility and novel applications
10.1109/melcon.2016.7495316 · 2016 · External reference
Post-Moore memory technology: sneak path current (spc) phenomena on RRAM crossbar array and solutions
10.3390/mi12010050 · 2021 · External reference
Crossbar RRAM arrays: selector device requirements during write operation
10.1109/ted.2014.2327514 · 2014 · External reference
Strong read and write interference induced by breakdown failure in crossbar arrays
10.1109/ted.2020.3031551 · 2020 · External reference
Two-step read scheme in one-selector and one-RRAM crossbar-based neural network for improved inference robustness
10.1109/ted.2018.2875937 · 2018 · External reference
Multidomain interactions in perpendicular magnetic tunnel junction (p-MTJ): enabling multistate MRAM
10.1109/ted.2023.3259927 · 2023 · External reference
Scalability of quad interface p-MTJ for 1X nm STT-MRAM with 10-ns low power write operation, 10 years retention and endurance > 1011
10.1109/ted.2020.3025749 · 2020 · External reference
SoC compatible 1 T1 C FeRAM memory array based on ferroelectric Hf0.5Zr0.5O2
10.1109/vlsitechnology18217.2020.9265063 · 2020 · External reference
Capacitance behavior with voltage bias in phase-change memory for fast operation
10.1109/ted.2021.3114264 · 2021 · External reference
A scheme for enabling the ultimate speed of threshold switching in phase change memory devices
10.1038/s41598-021-85690-9 · 2021 · External reference
Investigation of edge- and bulk-related resistive switching behaviors and backward-scan effects in SiOx-based resistive switching memory
10.1063/1.4829526 · 2013 · External reference
Electron irradiation-induced defects for reliability improvement in monolayer MoS2-based conductive-point memory devices
10.1038/s41699-022-00306-8 · 2022 · External reference
Reliability improvement and effective switching layer model of thin-film MoS2 memristors
10.1002/adfm.202214250 · 2023 · External reference
Nanoscale memory elements based on solid-state electrolytes
10.1109/tnano.2005.846936 · 2005 · External reference
Halide perovskites for resistive switching memory
10.1021/acs.jpclett.1c03408 · 2021 · External reference
High-performance InO-based 1T1R FET for BEOL memory application
10.1109/ted.2021.3085699 · 2021 · External reference
All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration
10.1038/s41467-019-13176-4 · 2019 · External reference
3D monolithic stacked 1T1R cells using monolayer MoS2 FET and hBN RRAM fabricated at low (150 °C) temperature
10.1109/iedm.2018.8614495 · 2018 · External reference
Influence of stop and gate voltage on resistive switching of 1T1R HfO2-based memristors, a modeling and variability analysis
10.1016/j.mssp.2024.108726 · 2024 · External reference
Highly non-linear and reliable amorphous silicon based back-to-back Schottky diode as selector device for large scale RRAM arrays
10.1149/2.0041709jss · 2017 · External reference
Demonstration of 3D vertical RRAM with ultra low-leakage, high-selectivity and self-compliance memory cells
10.1109/iedm.2015.7409667 · 2015 · External reference
Self-rectifying memristors for three-dimensional in-memory computing
10.1002/adma.202307218 · 2024 · External reference
Nanoscale resistive switches: devices, fabrication and integration
10.1007/s00339-011-6288-1 · 2011 · External reference
Trilayer tunnel selectors for memristor memory cells
10.1002/adma.201503604 · 2016 · External reference
Memory performance of a simple Pr0.7Ca0.3MnO3-based selectorless RRAM
10.1109/ted.2017.2725900 · 2017 · External reference
Voltage scaling in area scalable selector-less PrMnO3 RRAM by N2: O2 partial pressure dependent annealing
10.1109/inec.2019.8853856 · 2019 · External reference
Investigating selectorless property within niobium devices for storage applications
10.1021/acsami.1c20460 · 2022 · External reference
Sub-100fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices
10.1088/0957-4484/23/21/215202 · 2012 · External reference
Integration of niobium oxide-based resistive switching cells with different select properties into nanostructured cross-bar arrays
10.1088/0268-1242/30/11/115014 · 2015 · External reference
Self-rectifying memory cell based on SiGeAsSe ovonic threshold switch
10.1109/ted.2023.3252491 · 2023 · External reference
Effect of silicon doping in B-Te (B4Te) binary ovonic threshold switch system
10.1109/led.2022.3152207 · 2022 · External reference
High-density nanopatterning of SiGeAsTe chalcogenide as ovonic threshold switch selectors for memory applications
10.1021/acsanm.3c01611 · 2023 · External reference
Design space exploration of ovonic threshold switch (OTS) for sub-threshold read operation in cross-point memory arrays
10.1109/iscas.2019.8702296 · 2019 · External reference
Understanding of selector-less 1S1R type Cu-based CBRAM devices by controlling sub-quantum filament
10.1002/aelm.202000488 · 2020 · External reference
Nonlinearity enhancement by positive pulse stress in multilevel cell selectorless RRAM applications
10.1109/drc.2018.8442232 · 2018 · External reference
Energy efficient operation schemes of nonlinear selectorless RRAM for crossbar array applications
2019 · External reference
Direct-grown helical-shaped tungsten-oxide-based devices with reconfigurable selectivity for memory applications
10.3390/jlpea12040055 · 2022 · External reference
Nano helical-shaped dual-functional resistive memory for low-power crossbar array application
10.1021/acsaenm.2c00050 · 2023 · External reference
Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device
10.1088/0957-4484/24/38/384009 · 2013 · External reference
Demonstration of synaptic behaviors and resistive switching characterizations by proton exchange reactions in silicon oxide
10.1038/srep21268 · 2016 · External reference
Synaptic electronics: materials, devices and applications
10.1088/0957-4484/24/38/382001 · 2013 · External reference
Graphene oxide nanosheets reshape synaptic function in cultured brain networks
10.1021/acsnano.6b00130 · 2016 · External reference
Improving reliability of 1 Selector-1 ReRAM crossbar arrays through hybrid switching methods
10.3390/ma18040761 · 2025 · External reference
Timing selector: using transient switching dynamics to solve the sneak path issue of crossbar arrays
10.1002/smsc.202100072 · 2022 · External reference
Self-formed Schottky barrier induced selector-less RRAM for cross-point memory applications
10.1002/pssr.201206382 · 2012 · External reference
Vacancy-modulated conductive oxide resistive RAM (VMCO-RRAM): an area-scalable switching current, self-compliant, highly nonlinear and wide on/off-window resistive switching cell
2013 · External reference
Characteristics of Nb-doped SrTiO3 and HfO2-based selector devices
10.1109/drc.2016.7548460 · 2016 · External reference
Unidirectional threshold resistive switching in Au/NiO/Nb:SrTiO3 devices
10.1063/1.4985070 · 2017 · External reference
Comprehensive scaling study of NbO2 insulator-metal-transition selector for cross point array application
10.1063/1.4945367 · 2016 · External reference
Excellent selector characteristics of nanoscale VO2 for high-density bipolar ReRAM applications
10.1109/led.2011.2163697 · 2011 · External reference
Multi-stack InTe selector-only memory (SOM) achieving ultra-low power operation (10 μA) and excellent endurance ( ∼1010 cycles)
10.23919/vlsitechnologyandcir65189.2025.11075112 · 2025 · External reference
Mg-Te OTS selector with low Ioff (< 100 pA), fast switching speed (τd = 7 ns), and high thermal stability (400 °C/30min) for X-point memory applications
2021 · External reference
True random number generator for reliable hardware security modules based on a neuromorphic variation-tolerant spintronic structure
10.1109/tnano.2020.3034818 · 2020 · External reference
BSTCIM: a balanced symmetry ternary fully digital In-MRAM computing macro for energy efficiency neural network
10.1109/tcsi.2024.3438553 · 2024 · External reference
In-MRAM computing based on complementary-sensing time-based readout circuit using hybrid VGSOT-MTJ/GAA-CNTFET
10.1109/tcsii.2024.3460169 · 2025 · External reference
A self-decryption pass transistor logic-based In-MRAM computing macro using hybrid VGSOT-MTJ/GAA-CNTFET
10.1109/tcsi.2025.3566232 · 2025 · External reference
Practical determination of individual element resistive states in selectorless RRAM arrays
10.1109/tcsi.2015.2476296 · 2016 · External reference
Effect of AC pulse overshoot on nonlinearity and reliability of selectorless resistive random access memory in AC pulse operation
10.1016/j.sse.2014.11.013 · 2015 · External reference
Self-rectifying bipolar TaOx/TiO2 RRAM with superior endurance over 1012 cycles for 3D high-density storage-class memory
2013 · External reference
Bipolar Ni/TiO2/HfO2/Ni RRAM with multilevel states and self-rectifying characteristics
10.1109/led.2013.2264823 · 2013 · External reference
Bipolar nonlinear Ni/TiO2/Ni selector for 1S1R crossbar array applications
10.1109/led.2011.2161601 · 2011 · External reference
Device and circuit interaction analysis of stochastic behaviors in cross-point RRAM arrays
10.1109/ted.2017.2766046 · 2017 · External reference
On the write energy of non-volatile resistive crossbar arrays with selectors
10.1109/isqed.2018.8357285 · 2018 · External reference
A novel resistive switching identification method through relaxation characteristics for sneak-path-constrained selectorless RRAM application
10.1038/s41598-019-48932-5 · 2019 · External reference
Capturing configurable self-rectifying behaviors: multi-interfaced oxide-based resistive random access memory
10.1149/2162-8777/adc3c1 · 2025 · External reference
Cyclic resistive switching effect in plasma electrolytically oxidized mesoporous Pt/TiO2 structures
10.1016/j.spmi.2015.02.032 · 2015 · External reference
Characteristics of synaptic function of mesoporous silica–titania and mesoporous titania lateral electrode devices
10.3390/nano13111734 · 2023 · External reference
Optoelectronic mesoporous titania memristor with light-modulation by laser pointer
10.1002/apxr.202500058 · 2025 · External reference
Analog memristive characteristics of mesoporous silica–titania nanocomposite device concurrent with selection diode property
10.1021/acsami.9b09135 · 2019 · External reference
Selectorless resistive switching memory: non-uniform dielectric architecture and seasoning effect for low power array applications
10.1063/1.5097233 · 2019 · External reference
Resistive switching early failure and gap identification in bilayer selectorless RRAM applications
10.1109/drc46940.2019.9046451 · 2019 · External reference
Nonlinearity enhancement by positive pulse stress in multilevel cell selectorless RRAM applications
10.1109/drc.2018.8442232 · 2018 · External reference
Dual-functional nano helical-shaped devices for self-rectified memory and selector applications
2022 · External reference
Conductive bridging random access memory—materials, devices and applications
10.1088/0268-1242/31/11/113001 · 2016 · External reference
Demonstration of conductive bridging random access memory (CBRAM) in logic CMOS process
10.1016/j.sse.2010.11.024 · 2011 · External reference
19.7 A 16Gb ReRAM with 200MB/s write and 1GB/s read in 27nm technology
10.1109/isscc.2014.6757460 · 2014 · External reference
SiO2 based conductive bridging random access memory
10.1007/s10832-017-0070-5 · 2017 · External reference
Inherent diode isolation in programmable metallization cell resistive memory elements
10.1007/s00339-011-6292-5 · 2011 · External reference
Unresolved reference
2025 · External reference
Graphite-based selectorless RRAM: improvable intrinsic nonlinearity for array applications
10.1039/c8nr04766a · 2018 · External reference
Selector-less graphite memristor: intrinsic nonlinear behavior with gap design method for array applications
10.1149/08501.0011ecst · 2018 · External reference
Ambient effects on reprogrammable read-only selector-free memory for the embedded NVM applications
10.1109/drc55272.2022.9855800 · 2022 · External reference
Resistive switching random-access memory (RRAM): applications and requirements for memory and computing
10.1021/acs.chemrev.4c00845 · 2025 · External reference
A 28-nm RRAM/SRAM collaborative CIM accelerator supporting RRAM-endurance-latency awareness for edge fine-tuning
10.1109/jssc.2025.3577335 · 2025 · External reference
Efficient model switching in RRAM-based DNN accelerators
10.1109/tcad.2025.3550403 · 2025 · External reference
Dual-functional hybrid selectorless RRAM and selection device for memory array application
10.1109/ted.2021.3095438 · 2021 · External reference
Self-rectified memristor with bimodal functionality and forming polarity responses in crossbar array applications
10.1109/drc52342.2021.9467168 · 2021 · External reference
Ambient effects on reprogrammable read-only selector-free memory for the embedded NVM applications
10.1109/drc55272.2022.9855800 · 2022 · External reference
Multi-level control of resistive RAM (RRAM) using a write termination to achieve 4 bits/cell in high resistance state
10.3390/electronics10182222 · 2021 · External reference
Forming-free and self-limited multilevel switching in TaO2/MnO memristor crossbar arrays for high-performance memory applications
10.1021/acsaelm.5c01210 · 2025 · External reference
Current-sweep operation on nonlinear selectorless RRAM for multilevel cell applications
10.1007/s11664-020-07987-1 · 2020 · External reference
Roadmap for unconventional computing with nanotechnology
10.1088/2399-1984/ad299a · 2024 · External reference
Multi-state MRAM cells for hardware neuromorphic computing
10.1038/s41598-022-11199-4 · 2022 · External reference
A ferroelectric multi-level cell enabling in-situ hybrid DRAM-FeRAM storage
10.1109/led.2026.3668849 · 2026 · External reference
Analog in-memory-compute with multi-bit silicon Ferro FinFET array for improved energy and area efficiency
10.1109/imw61990.2025.11026976 · 2025 · External reference
Skyrmion-based artificial synapses for neuromorphic computing
10.1038/s41928-020-0385-0 · 2020 · External reference
Neuromorphic weighted sums with magnetic skyrmions
10.1038/s41928-024-01303-z · 2025 · External reference
Interlayer Dzyaloshinskii–Moriya interaction in synthetic ferrimagnets for spiking neural networks
10.1002/advs.202519110 · 2026 · External reference
Domain wall magnetic tunnel junction-based artificial synapses and neurons for all-spin neuromorphic hardware
10.1038/s41467-024-48631-4 · 2024 · External reference
Tailorable multiferroic tunnel junctions from all-van der Waals multilayer stacking
10.1038/s41565-025-02065-1 · 2026 · External reference
Measurement-device-independent quantum key distribution based on the multi-scale entanglement renormalization ansatz
10.7498/aps.75.20251450 · 2026 · External reference
Memristors with analogue switching and high on/off ratios using a van der Waals metallic cathode
10.1038/s41928-024-01269-y · 2025 · External reference
Memory manufacture under microgravity (MMuM): in-space manufactured ZnO-based resistive random access memory for emerging computing application
10.1002/aelm.202500114 · 2025 · External reference
Grainy CrxOy RRAM with thermal stability for enabling emerging computing applications
10.1021/acsaelm.5c02188 · 2025 · External reference
Momentum-resolved tunneling modulation induced giant multistate resistance in antiferroelectric multiferroic junction
10.1021/acsnano.5c12783 · 2025 · External reference
Large and multistate magnetoresistance in 2D van der Waals multiferroic tunnel junctions
10.1007/s40843-024-3291-3 · 2025 · External reference
Selector-less RRAM with non-linearity of device for cross-point array applications
10.1016/j.mee.2013.03.130 · 2013 · External reference
Linking conductive filament properties and evolution to synaptic behavior of RRAM devices for neuromorphic applications
10.1109/led.2017.2731859 · 2017 · External reference
Selectorless oxide-based resistive switching memory with nonuniform dielectric for low power crossbar array applications
10.1149/08903.0045ecst · 2019 · External reference
Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application
10.1088/1361-6463/aaa1b9 · 2018 · External reference
Study of self-compliance behaviors and internal filament characteristics in intrinsic SiOx-based resistive switching memory
10.1063/1.4940203 · 2016 · External reference
Dependence of read margin on pull-up schemes in high-density one selector–one resistor crossbar array
10.1109/ted.2012.2225147 · 2013 · External reference
A spiking artificial neuron based on one diffusive memristor, one transistor and one resistor
10.1038/s41928-025-01488-x · 2025 · External reference
Artificial transneurons emulate neuronal activity in different areas of brain cortex
10.1038/s41467-025-62151-9 · 2025 · External reference
PrMnO3-based scaled (<300 nm) nonlinear RRAM device for selector-less array application
2019 · External reference
A selectorless RRAM with record memory window and nonlinearity based on trap filled limit mechanism
10.1109/nvmts.2015.7457491 · 2015 · External reference
Self-selective resistive device with hybrid switching mode for passive crossbar memory application
10.1109/led.2020.2992680 · 2020 · External reference
Self-selective crossbar synapse array with n-ZnO/p-NiOx/n-ZnO structure for neuromorphic computing
10.1002/aelm.202400347 · 2024 · External reference
Pt/Al2O3/TaOx/Ta self-rectifying memristor with record-low operation current (<2 pA), low power (fJ), and high scalability
10.1109/ted.2021.3134137 · 2021 · External reference
Self-selecting resistive switching scheme using TiO2 nanorod arrays
10.1038/s41598-017-01354-7 · 2017 · External reference
Resistive switching of Ta2O5-based self-rectifying vertical-type resistive switching memory
10.1007/s11664-017-5787-z · 2018 · External reference
Intrinsic nonlinearity modulation in two-dimensional (Cu,Ag)InP2S6 for selectorless nonvolatile memory array
10.1021/acsami.6c0252910.1021/acsami.6c02529.s001 · 2026 · External reference
