Research graph
References from Edge passivation engineering of zigzag b010 gallenene nanoribbons: a first-principles investigation of electronic structure and quantum transport properties. Local targets link to admitted publications; unresolved targets remain external evidence.
Recent developments in emerging two-dimensional materials and their applications
10.1039/c9tc04187g · 2020 · External reference
Advanced 2D Materials for Energy Applications
10.1201/9781003594406/graphene-beyond-ram-gupta · 2026 · External reference
An atlas of two-dimensional materials
10.1039/c4cs00102h · 2014 · External reference
Stability and electronic properties of gallenene
10.1039/d1na00553g · 2022 · External reference
Thickness dependent thermal stability of 2D gallenene
10.1039/c9cc03238j · 2019 · External reference
Bandstructure and transport properties of semiconducting gallenene nanoribbons
2022 · External reference
Ballistic performance and overshoot effects in gallenene nanoribbon field-effect transistors
10.1063/5.0188216 · 2024 · External reference
Effects of edge passivation by hydrogen on electronic structure of armchair graphene nanoribbon and band gap engineering
10.1063/1.3103551 · 2009 · External reference
Recent developments in stability and passivation techniques of phosphorene toward next‐generation device applications
10.1002/adfm.201903419 · 2019 · External reference
The magnetic and transport properties of edge passivated silicene nanoribbon by Mn atoms
10.1016/j.cplett.2016.01.027 · 2016 · External reference
Effect of vacancy defect position on the Zigzag phosphorene nanoribbon tunneling FETs
10.24425/ijet.2025.155476 · 2025 · External reference
Exploring performance characteristics via edge configuration in black phosphorene TFETs
10.1142/s021797922540048x · 2025 · External reference
Phosphorene nanoribbon field effect transistor with a dual material gate
10.1088/2631-8695/ad5929 · 2024 · External reference
Inverse Stone Throwers Wales defect and enhancing ION/IOFF ratio and subthreshold swing of GNR transistors
10.1051/epjap/2019190033 · 2019 · External reference
Inverse Stone-Thrower-Wales defect and transport properties of 9AGNR double-gate graphene nanoribbon FETs
10.1007/s11771-019-4226-0 · 2019 · External reference
The effect of Stone Wales defect on the electrical characteristics of phosphorene nanoribbon tunneling field effect transistors
10.1088/1402-4896/ae22a0 · 2025 · External reference
Bismuthene nanoribbon topological field-effect transistor: a DFT-NEGF-based study
10.1088/1367-2630/adf13f · 2025 · External reference
Quantum transport of doped rough-edged graphene nanoribbons FET based on TB-NEGF method
10.12989/anr.2024.17.2.137 · 2024 · External reference
Doped armchair germanene nanoribbon exhibiting negative differential resistance and analysing its nano-FET performance
10.1016/j.orgel.2017.12.039 · 2018 · External reference
Modeling the charge transport in graphene nano ribbon interfaces for nano scale electronic devices
10.1142/s1756973714500036 · 2015 · External reference
Intrinsic performance limits of extremely scaled field-effect transistors based on MX2 (M={Zr, Hf}, X={S, Se}) nanoribbons
10.1063/5.0224088 · 2024 · External reference
A novel tunneling graphene nano ribbon field effect transistor with dual material gate: numerical studies
10.1016/j.spmi.2016.06.034 · 2016 · External reference
Width and crystal orientation dependent band gap renormalization in substrate-supported graphene nanoribbons
10.1021/acs.jpclett.6b00422 · 2016 · External reference
A unified understanding of the thickness-dependent bandgap transition in hexagonal two-dimensional semiconductors
10.1021/acs.jpclett.5b02687 · 2016 · External reference
Influence of temperature, electric field and spin Zeeman field on the quantum capacitance of the germanene monolayer material
10.1088/1402-4896/adc2b3 · 2025 · External reference
Recent developments in stability and passivation techniques of phosphorene toward next‐generation device applications
10.1002/adfm.201903419 · ExternalCitation · doi-reference
Inverse Stone-Thrower-Wales defect and transport properties of 9AGNR double-gate graphene nanoribbon FETs
10.1007/s11771-019-4226-0 · ExternalCitation · doi-reference
The magnetic and transport properties of edge passivated silicene nanoribbon by Mn atoms
10.1016/j.cplett.2016.01.027 · ExternalCitation · doi-reference
Doped armchair germanene nanoribbon exhibiting negative differential resistance and analysing its nano-FET performance
10.1016/j.orgel.2017.12.039 · ExternalCitation · doi-reference
A novel tunneling graphene nano ribbon field effect transistor with dual material gate: numerical studies
10.1016/j.spmi.2016.06.034 · ExternalCitation · doi-reference
A unified understanding of the thickness-dependent bandgap transition in hexagonal two-dimensional semiconductors
10.1021/acs.jpclett.5b02687 · ExternalCitation · doi-reference
Width and crystal orientation dependent band gap renormalization in substrate-supported graphene nanoribbons
10.1021/acs.jpclett.6b00422 · ExternalCitation · doi-reference
An atlas of two-dimensional materials
10.1039/c4cs00102h · ExternalCitation · doi-reference
Thickness dependent thermal stability of 2D gallenene
10.1039/c9cc03238j · ExternalCitation · doi-reference
Recent developments in emerging two-dimensional materials and their applications
10.1039/c9tc04187g · ExternalCitation · doi-reference
Stability and electronic properties of gallenene
10.1039/d1na00553g · ExternalCitation · doi-reference
Inverse Stone Throwers Wales defect and enhancing ION/IOFF ratio and subthreshold swing of GNR transistors
10.1051/epjap/2019190033 · ExternalCitation · doi-reference
Effects of edge passivation by hydrogen on electronic structure of armchair graphene nanoribbon and band gap engineering
10.1063/1.3103551 · ExternalCitation · doi-reference
Ballistic performance and overshoot effects in gallenene nanoribbon field-effect transistors
10.1063/5.0188216 · ExternalCitation · doi-reference
Intrinsic performance limits of extremely scaled field-effect transistors based on MX2 (M={Zr, Hf}, X={S, Se}) nanoribbons
10.1063/5.0224088 · ExternalCitation · doi-reference
Bismuthene nanoribbon topological field-effect transistor: a DFT-NEGF-based study
10.1088/1367-2630/adf13f · ExternalCitation · doi-reference
Influence of temperature, electric field and spin Zeeman field on the quantum capacitance of the germanene monolayer material
10.1088/1402-4896/adc2b3 · ExternalCitation · doi-reference
The effect of Stone Wales defect on the electrical characteristics of phosphorene nanoribbon tunneling field effect transistors
10.1088/1402-4896/ae22a0 · ExternalCitation · doi-reference
Phosphorene nanoribbon field effect transistor with a dual material gate
10.1088/2631-8695/ad5929 · ExternalCitation · doi-reference
Exploring performance characteristics via edge configuration in black phosphorene TFETs
10.1142/s021797922540048x · ExternalCitation · doi-reference
Modeling the charge transport in graphene nano ribbon interfaces for nano scale electronic devices
10.1142/s1756973714500036 · ExternalCitation · doi-reference
Advanced 2D Materials for Energy Applications
10.1201/9781003594406/graphene-beyond-ram-gupta · ExternalCitation · doi-reference
Quantum transport of doped rough-edged graphene nanoribbons FET based on TB-NEGF method
10.12989/anr.2024.17.2.137 · ExternalCitation · doi-reference
Effect of vacancy defect position on the Zigzag phosphorene nanoribbon tunneling FETs
10.24425/ijet.2025.155476 · ExternalCitation · doi-reference
