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References from Photoconductive gain of extrinsic semiconductor detectors. Local targets link to admitted publications; unresolved targets remain external evidence.
Quantum-dot infrared photodetectors: status and outlook
10.1016/j.pquantelec.2008.07.001 · 2008 · External reference
A perspective on nanowire photodetectors: current status, future challenges, and opportunities
10.1109/jstqe.2010.2093508 · 2011 · External reference
Advances in InGaAs/InP single-photon detector systems for quantum communication
10.1038/lsa.2015.59 · 2015 · External reference
High-speed photodetectors in optical communication system
10.1088/1674-4926/38/12/121001 · 2017 · External reference
Photodetection probability in quantum systems with arbitrarily strong light–matter interaction
10.1038/s41598-018-36056-1 · 2018 · External reference
Ranging and light field imaging with transparent photodetectors
10.1038/s41566-019-0567-3 · 2020 · External reference
2D material-based photodetectors for infrared imaging
10.1002/smsc.202100051 · 2021 · External reference
High-speed mid-wave infrared holey photodetectors
10.1063/5.0141159 · 2023 · External reference
Advances in optical imaging and optical communications based on high-quality halide perovskite photodetectors
10.1002/adfm.202311205 · 2024 · External reference
Detector size selection for long-range targeting performance in the extended shortwave infrared band
10.1364/oe.524002 · 2024 · External reference
Infrared photodetectors: recent advances and challenges toward innovation for image sensing applications
10.1002/adom.202401625 · 2024 · External reference
Some aspects of the photoconductivity of cadmium sulfide RCA Rev.
1951 · External reference
An outline of some photoconductive processes RCA Rev.
1951 · External reference
Unresolved reference
1984 · External reference
Unresolved reference
1996 · External reference
Nanowire Photodetectors
10.1166/jnn.2010.2157 · 2010 · External reference
10.1007/978-1-4419-1056-1
10.1007/978-1-4419-1056-1 · 2010 · External reference
Unresolved reference
2012 · External reference
Unresolved reference
2021 · External reference
Ultrasensitive photodetectors based on monolayer MoS2
10.1038/nnano.2013.100 · 2013 · External reference
Innovative all-silicon based a-SiNx:O/c-Si heterostructure solar-blind photodetector with both high responsivity and fast response speed
10.1063/5.0071602 · 2022 · External reference
Quantum efficiency gain in 2D perovskite photo and x-ray detectors
10.1002/adom.202300847 · 2023 · External reference
Space and time domain transport modulation by InGaN/GaN single-carrier superlattices for high-performance UV-blue photodetection
10.1021/acsphotonics.4c01702 · 2025 · External reference
Characterization and modeling of interfacial photogating effect in graphene field-effect transistor photodetectors on silicon
10.1021/acsaelm.4c02268 · 2025 · External reference
High-performance MSM photodetector based on MgZnO/InGaO heterojunction for solar-blind UV detection
10.1063/5.0289829 · 2025 · External reference
Photoconductivity-driven quantum efficiency gain in inorganic Ruddlesden–Popper layered Cs2PbBr2I2 perovskite photodetector for visible light detection
10.1002/adfm.202522928 · 2026 · External reference
High-performance MSM UV photodetector based on a NiO/InGaO type-II p–n heterojunction with mitigated PPC effect
10.1063/5.0313318 · 2026 · External reference
Enhanced photogain and carrier mobility via modulating exciton generation and transport of amorphous-alpha-mixed Ga2O3 photodetector
10.1021/acsaelm.5c02710 · 2026 · External reference
Defect-driven photocarrier dynamics and thermal quenching of photocurrent in β-Ga2O3 thin films
10.1016/j.mtcomm.2026.114932 · 2026 · External reference
Effect of Mg doping on β-Ga2O3 UVC photodetectors deposited by ultrasonic spray pyrolysis
10.1109/jsen.2026.3688160 · 2026 · External reference
Post-growth thickness engineering of vapor-deposited SnS flakes for enhanced photodetection
10.1088/1361-6463/ae7a88 · 2026 · External reference
Understanding photoinduced memory effects in optoelectronic devices across photoresponse time scales for sensor-based artificial intelligence
10.1021/acsphotonics.5c00151 · 2025 · External reference
Origin of the high photoconductive gain in AlGaN films
10.1117/12.736772 · 2007 · External reference
A route to high gain photodetectors through suppressed recombination in disordered films
10.1063/1.4963705 · 2016 · External reference
High-gain silicon-based ingan/gan dot-in-nanowire array photodetector
10.1021/acsphotonics.9b00390 · 2019 · External reference
Zum Mechanismus des lichtelektrischen Primärstromes in isolierenden Kristallen
10.1007/bf01338917 · 1932 · External reference
Unresolved reference
1940 · External reference
Reexamination of gain theory for intrinsic photoconductive devices
10.3390/photonics12050523 · 2025 · External reference
On the response behavior of fast photoconductive optical planar and coaxial semiconductor detectors
10.1109/t-ed.1982.20893 · 1982 · External reference
A photoconductor intrinsically has no gain
10.1021/acsphotonics.8b00805 · 2018 · External reference
Eine quantitative Behandlung der stationären lichtelektrischen Primär- und Sekundärströme in Kristallen, erläutert am KH-KBr-Mischkristall als Halbleitermodell
10.1007/bf01375000 · 1938 · External reference
New investigations of photochemical processes in crystals and measurements by electrical means
10.1039/tf9383400883 · 1938 · External reference
Zur quantitativen Behandlung der lichtelektrischen Primär-und Sekundärströme
10.1007/bf01340069 · 1939 · External reference
Die Rolle sekundärer Elektronen bei der lichtelektrischen Leitung
10.1002/andp.19474360603 · 1947 · External reference
Lichtelektrische Sättigungsströme in Halbleitern
10.1007/bf01340686 · 1954 · External reference
10.21981/g0qv-vd57
10.21981/g0qv-vd57 · 2021 · External reference
A new analytic formula for minority carrier decay length extraction from scanning photocurrent profiles in Ohmic-contact nanowire devices
10.1038/s41598-019-46020-2 · 2019 · External reference
Fabricating Ohmic contacts to Au hyperdoped Si for infrared photodetector applications
10.1088/1361-6641/ae51b9 · 2026 · External reference
10.1117/3.100313.fm
10.1117/3.100313.fm · 2025 · External reference
Unresolved reference
1960 · External reference
Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection
10.1364/oe.22.015639 · 2014 · External reference
10.1002/9781119579182
10.1002/9781119579182 · 2022 · External reference
The Gain Theory of Doped Photoconductive Devices Proc
10.1109/rapid64712.2025.11151503 · 2025 · External reference
Flexible uncooled ultraviolet to middle-wavelength infrared ultrabroadband nanohybrid photodetectors for imaging
10.1088/2632-959x/ae54b3 · 2026 · External reference
Electronic properties and photo-gain of UV-C photodetectors based on high-resistivity orthorhombic κ-Ga2O3 epilayers
10.1016/j.mseb.2022.116056 · 2022 · External reference
Huge photosensitivity gain combined with long photocurrent decay times in various polymorphs of Ga2O3: effects of carrier trapping with deep centers
10.1088/1361-6463/ad8e6e · 2025 · External reference
Status of Ga2O3 for power device and UV photodetector applications
10.1063/5.0285075 · 2025 · External reference
Unresolved reference
1992 · External reference
Scaling effects in Ohmic contacts on semiconductors
10.1063/1.4918901 · 2015 · External reference
Insight into gain and transient response characteristics of AlGaN/GaN heterojunction based UV photodetectors: case study on the role of incident light intensity
10.1063/5.0227700 · 2024 · External reference
Enhancing performance of Au-hyperdoped Si photodetectors for infrared detection
10.1063/5.0198543 · 2024 · External reference
Optoelectronic characteristics of epitaxial GaN layers grown on SiC and sapphire substrates for UV photodetection applications
10.1088/1402-4896/ae3032 · 2026 · External reference
Decoupling of photocurrent and dark current for extraordinary detectivity in uncooled middle-wavelength infrared nanohybrid photodetectors
10.1021/acsnano.4c12802 · 2025 · External reference
Selenization of V2O5/WO3 bilayers for tuned optoelectronic response of WSe2 films
10.1063/5.0282009 · 2025 · External reference
Characterization of lateral amorphous selenium photodetectors for low-photon and VUV detection at cryogenic temperatures
10.1088/1748-0221/21/01/p01032 · 2026 · External reference
