Research graph
References from Sulfur/oxygen vacancy synergistic engineering in MoS <sub>2</sub> -based neuromorphic devices. Local targets link to admitted publications; unresolved targets remain external evidence.
The future of electronics based on memristive systems
10.1038/s41928-017-0006-8 · 2018 · External reference
The roadmap of 2D materials and devices toward chips
10.1007/s40820-023-01273-5 · 2024 · External reference
Understanding memristive switching via in situ characterization and device modeling
10.1038/s41467-019-11411-6 · 2019 · External reference
Emerging memristive artificial synapses and neurons for energy-efficient neuromorphic computing
10.1002/adma.202004659 · 2020 · External reference
Memristor-based neuromorphic chips
10.1002/adma.202310704 · 2024 · External reference
Two-dimensional material-based devices for in-sensor computing
10.1038/s44335-025-00034-4 · 2025 · External reference
Solution-processable 2D semiconductors for high-performance large-area electronics
10.1038/s41586-018-0574-4 · 2018 · External reference
Covalently interconnected transition metal dichalcogenide networks via defect engineering for high-performance electronic devices
10.1038/s41565-021-00857-9 · 2021 · External reference
Cosolvent approach for solution-processable electronic thin films
10.1021/acsnano.5b00886 · 2015 · External reference
Harnessing defects in SnSe film via photo-induced doping for fully light-controlled artificial synapse
10.1002/adma.202410783 · 2025 · External reference
Defect-engineered semiconducting van der Waals thin film at metal-semiconductor interface of field-effect transistors
10.1021/acsnano.3c10453 · 2024 · External reference
An ultrathin memristor based on a two-dimensional WS2/MoS2 heterojunction
10.1039/d1nr01683k · 2021 · External reference
Medium-scale flexible integrated circuits based on 2D semiconductors
10.1038/s41467-024-55142-9 · 2024 · External reference
2D MoS2-based reconfigurable analog hardware
10.1038/s41467-024-55395-4 · 2025 · External reference
A RISC-V 32-bit microprocessor based on two-dimensional semiconductors
10.1038/s41586-025-08759-9 · 2025 · External reference
Ion-electron interactions in 2D nanomaterials-based artificial synapses for neuromorphic applications
10.1021/acsnano.5c02397 · 2025 · External reference
Adsorption and dissociation of H2O on monolayered MoS2 edges: Energetics and mechanism from ab Initio simulations
10.1021/jp510899m · 2015 · External reference
Intrinsic structural defects in monolayer molybdenum disulfide
10.1021/nl4007479 · 2013 · External reference
Free-standing multilayer molybdenum disulfide memristor for brain-inspired neuromorphic applications
10.1021/acsami.1c11359 · 2021 · External reference
Colloidal synthesis of uniform-sized molybdenum disulfide nanosheets for wafer-scale flexible nonvolatile memory
10.1002/adma.201602391 · 2016 · External reference
Robust memristors based on layered two-dimensional materials
10.1038/s41928-018-0021-4 · 2018 · External reference
Unsaturated bi-heterometal clusters in metal-vacancy sites of 2D MoS2 for efficient hydrogen evolution
10.1002/cey2.417 · 2024 · External reference
Realizing electronic synapses by defect engineering in polycrystalline two-dimensional MoS2 for neuromorphic computing
10.1021/acsami.2c21688 · 2023 · External reference
Solution-processed robust multifunctional memristor of 2D layered material thin film
10.1021/acsnano.3c10775 · 2024 · External reference
MoS2 memristors exhibiting variable switching characteristics toward biorealistic synaptic emulation
10.1021/acsnano.8b03977 · 2018 · External reference
An optoelectronic synapse based on two-dimensional violet phosphorus heterostructure
10.1002/advs.202301851 · 2023 · External reference
Wafer-scale solution-processed 2D material analog resistive memory array for memory-based computing
10.1038/s41467-022-30519-w · 2022 · External reference
Visualizing thermally activated memristive switching in percolating networks of solution-processed 2D semiconductors
10.1002/adfm.202107385 · 2021 · External reference
Negative differential resistance in novel nanoscale devices
10.1016/j.sse.2022.108464 · 2022 · External reference
Oxygen vacancy migration/diffusion induced synaptic plasticity in a single titanate nanobelt
10.1039/c7nr09335g · 2018 · External reference
Infrared-triggered retinomorphic artificial synapse electronic device containing multi-dimensional van der Waals heterojunctions
10.1002/smll.202410892 · 2025 · External reference
2D memory enabled by electrical stimulation-induced defect engineering for complicated neuromorphic computing
10.1002/adfm.202416333 · 2025 · External reference
Fully printed memristors made with MoS2 and graphene water-based inks
10.1039/d3mh01224g · 2024 · External reference
Enhancing resistive switching characteristics of MoS2-based memristor through O2 plasma irradiation-induced defects
10.1109/jeds.2024.3480356 · 2025 · External reference
Phase-change heterostructure enables ultralow noise and drift for memory operation
10.1126/science.aay0291 · 2019 · External reference
Ultra-fast non-volatile resistive switching devices with over 512 distinct and stable levels for memory and neuromorphic computing
10.1002/adfm.202418980 · 2025 · External reference
Space-confined one-step growth of 2D MoO2/MoS2 vertical heterostructures for superior hydrogen evolution in alkaline electrolytes
10.1002/smll.202201051 · 2022 · External reference
Oxygen incorporated MoS2 for rectification-mediated resistive switching and artificial neural network
10.1002/adfm.202213348 · 2024 · External reference
Quantification of defects engineered in single layer MoS2
10.1039/d0ra03372c · 2020 · External reference
From bulk to monolayer MoS2: Evolution of Raman scattering
10.7312/li--16274-023 · 2012 · External reference
Raman shifts in electron-irradiated monolayer MoS2
10.1021/acsnano.5b07388 · 2016 · External reference
Highly uniform wafer-scale synthesis of α-MoO3 by plasma enhanced chemical vapor deposition
10.1088/1361-6528/aa67d1 · 2017 · External reference
Effect of low energy nitrogen ion irradiation on MoO3 films
10.1016/j.optmat.2022.112349 · 2022 · External reference
Origin of the high work function and high conductivity of MoO3
10.1063/1.4903538 · 2014 · External reference
Janus effect of O2 plasma modification on the electrocatalytic hydrogen evolution reaction of MoS2
10.1016/j.jcat.2018.03.018 · 2018 · External reference
Electrical conductivity and gas sensing properties of MoO3
10.1016/j.snb.2004.02.048 · 2004 · External reference
Interface properties of CVD grown graphene transferred onto MoS2(0001)
10.1039/c3nr03692h · 2014 · External reference
Tunable sulfur desorption in exfoliated MoS2 by means of thermal annealing in ultra-high vacuum
10.1016/j.cplett.2013.10.034 · 2013 · External reference
Fermi level pinning at electrical metal contacts of monolayer molybdenum dichalcogenides
10.1021/acsnano.6b07159 · 2017 · External reference
Neuro-inspired computing chips
10.1038/s41928-020-0435-7 · 2020 · External reference
Solution-processed SnO2/SnS2 bilayer-based robust memristors for reliable neuromorphic computing
10.1039/d5nh00779h · 2026 · External reference
Oxygen vacancy-dependent synaptic dynamic behavior of TiOx-based transparent memristor
10.1109/ted.2021.3056333 · 2021 · External reference
Improved memory and synaptic device performance of HfO2-based multilayer memristor by inserting oxygen gradient TiOx layer
10.1016/j.chaos.2024.115910 · 2025 · External reference
A fully printed flexible MoS2 memristive artificial synapse with femtojoule switching energy
10.1002/aelm.201970061 · 2019 · External reference
Insights into multilevel resistive switching in monolayer MoS2
10.1021/acsami.9b15677 · 2020 · External reference
Wafer-scale fabrication of Al/MoS2/Poly-Si memristors and insight of mechanism on the resistive switching
10.1021/acsaelm.3c01314 · 2024 · External reference
Scalable high yield exfoliation for monolayer nanosheets
10.1038/s41467-022-35569-8 · 2023 · External reference
An adaptive threshold neuron for recurrent spiking neural networks with nanodevice hardware implementation
10.1038/s41467-021-24427-8 · 2021 · External reference
Leaky integrate-and-fire neurons based on perovskite memristor for spiking neural networks
10.1016/j.nanoen.2020.104828 · 2020 · External reference
10.1109/edtm50988.2021.9421014
10.1109/edtm50988.2021.9421014 · External reference
Adaptive SRM neuron based on NbOx memristive device for neuromorphic computing
10.1016/j.chip.2022.100015 · 2022 · External reference
Enhanced photoresponse in PdSe2 via local plasma treatment: Implication for advanced optoelectronic devices
10.1021/acsanm.4c06731 · 2025 · External reference
