Research graph
References from Diffusion-driven light emission in branched GaInP nanowire LEDs enabled by indirect–direct bandgap engineering. Local targets link to admitted publications; unresolved targets remain external evidence.
InP nanowire array solar cells achieving 13.8% efficiency by exceeding the ray optics limit
10.1126/science.1230969 · 2013 · External reference
Efficiency enhancement of InP nanowire solar cells by surface cleaning
10.1021/nl4016182 · 2013 · External reference
GaAs nanowire array solar cells with axial p-i-n junctions
10.1021/nl500704r · 2014 · External reference
Room-temperature InP/InAsP quantum discs-in-nanowire infrared photodetectors
10.1021/acs.nanolett.6b05114 · 2017 · External reference
Uncooled photodetector at short-wavelength infrared using InAs nanowire photoabsorbers on InP with p-n heterojunctions
10.1021/acs.nanolett.8b03775 · 2018 · External reference
Highly uniform InGaAs/InP quantum well nanowire array-based light emitting diodes
10.1016/j.nanoen.2020.104576 · 2020 · External reference
Core–shell tunnel junction nanowire white-light-emitting diode
10.1021/acs.nanolett.0c00420 · 2020 · External reference
Direct band gap white light emission from charge carrier diffusion induced nanowire light-emitting diodes
10.1016/j.nanoen.2024.110400 · 2024 · External reference
Optically pumped room-temperature GaAs nanowire lasers
10.1038/nphoton.2013.303 · 2013 · External reference
Understanding the role of facets and twin defects in the optical performance of GaAs nanowires for laser applications
10.1039/d1nh00079a · 2021 · External reference
One-dimensional steeplechase for electrons realized
10.1021/nl010099n · 2002 · External reference
Growth of nanowire superlattice structures for nanoscale photonics and electronics
10.1038/415617a · 2002 · External reference
Nanowire photonics
10.1038/nphoton.2009.184 · 2009 · External reference
Demonstration of InP/InAsP/InP axial heterostructure nanowire array vertical LEDs
10.1088/1361-6528/ab9bd2 · 2020 · External reference
Ultra-dense green InGaN/GaN nanoscale pixels with high luminescence stability and uniformity for near-eye displays
10.1021/acsnano.4c08224 · 2024 · External reference
Optimization of current injection in AlGaInP core-shell nanowire light-emitting diodes
10.1021/acs.nanolett.7b00759 · 2017 · External reference
Coupling of light into nanowire arrays and subsequent absorption
10.1166/jnn.2010.2907 · 2010 · External reference
Chapter seven-nanowire-based visible light emitters, present status and outlook
10.1016/bs.semsem.2015.10.002 · 2016 · External reference
Synthesis and applications of III-V nanowires
10.1021/acs.chemrev.9b00075 · 2019 · External reference
Micro light-emitting diodes
10.1038/s41928-022-00828-5 · 2022 · External reference
Emission enhancement, light extraction and carrier dynamics in InGaAs/GaAs nanowire arrays
10.1088/2399-1984/aaa666 · 2018 · External reference
Modifying the emission of light from a semiconductor nanowire array
10.1063/1.4960017 · 2016 · External reference
Characterization of N-doped branches in nanotree LEDs
10.1039/d4ya00414k · 2024 · External reference
10.1002/0470068329
10.1002/0470068329 · External reference
Wafer-scale synthesis and optical characterization of InP nanowire arrays for solar cells
10.1021/acs.nanolett.1c02542 · 2021 · External reference
Strategies to obtain pattern fidelity in nanowire growth from large-area surfaces patterned using nanoimprint lithography
10.1007/s12274-016-1165-z · 2016 · External reference
Single GaInP nanowire p-i-n junctions near the direct to indirect bandgap crossover point
10.1063/1.4729929 · 2012 · External reference
Growth parameter design for homogeneous material composition in ternary GaxIn1−xP nanowires
10.1088/0957-4484/26/43/435601 · 2015 · External reference
Growth of branched nanowires via solution-based Au seed particle deposition
10.1088/2053-1591/acece2 · 2023 · External reference
10.1109/pvsc40753.2019.8980764
10.1109/pvsc40753.2019.8980764 · External reference
10.1016/b978-0-08-046978-2.50027-2
10.1016/b978-0-08-046978-2.50027-2 · External reference
Empirical fit to band discontinuities and barrier heights in III-V alloy systems
10.1063/1.106575 · 1992 · External reference
Conduction band structure of GaInP
10.1103/physrevb.15.2032 · 1977 · External reference
10.1002/9780470744383
10.1002/9780470744383 · External reference
Some properties of p-n junctions in GaP
10.1063/1.1777028 · 1961 · External reference
Effect of the donor concentration on the green electroluminescence from gallium phosphide diodes
10.1063/1.1658342 · 1970 · External reference
Temperature dependence of the energy gap in semiconductors
10.1016/0031-8914(67)90062-6 · 1967 · External reference
Effects of epitaxial lift-off on interface recombination and laser cooling in GaInP∕GaAs heterostructures
10.1063/1.1868068 · 2005 · External reference
Direct bandgap photoluminescence from N-type indirect GaInP alloys
10.1364/prj.5.000239 · 2017 · External reference
Carrier recombination processes in gallium indium phosphide nanowires
10.1021/acs.nanolett.7b01159 · 2017 · External reference
