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References from Watt-level transistors based on molybdenum disulphide. Local targets link to admitted publications; unresolved targets remain external evidence.
Single-layer MoS2 transistors
10.1038/nnano.2010.279 · 2011 · External reference
Two-dimensional semiconductors: From materials preparation to electronic applications
10.1002/aelm.201700045 · 2017 · External reference
Two-dimensional semiconductors for transistors
10.1038/natrevmats.2016.52 · 2016 · External reference
Promises and prospects of two-dimensional transistors
10.1038/s41586-021-03339-z · 2021 · External reference
Two-dimensional semiconductors: From device processing to circuit integration
10.1002/adfm.202304778 · 2023 · External reference
The future of two-dimensional semiconductors beyond Moore’s law
10.1038/s41565-024-01695-1 · 2024 · External reference
Fractional quantum Hall phases in high-mobility n-type molybdenum disulfide transistors
10.1038/s41928-024-01274-1 · 2024 · External reference
Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire
10.1038/s41565-021-00963-8 · 2021 · External reference
Large-scale flexible and transparent electronics based on monolayer molybdenum disulfide field-effect transistors
10.1038/s41928-020-00475-8 · 2020 · External reference
Two-dimensional semiconductors and transistors for future integrated circuits
10.1021/acsnano.3c10900 · 2024 · External reference
Interface engineering of 2D materials toward high-temperature electronic devices
10.1002/adma.202418439 · 2025 · External reference
MoS2 field-effect transistor with sub-10 nm channel length
10.1021/acs.nanolett.6b03999 · 2016 · External reference
Two-dimensional indium selenide wafers for integrated electronics
10.1126/science.adu3803 · 2025 · External reference
Ballistic two-dimensional InSe transistors
10.1038/s41586-023-05819-w · 2023 · External reference
Two-dimensional semiconductor integrated circuits operating at gigahertz frequencies
10.1038/s41928-023-01052-5 · 2023 · External reference
Ultralow voltage operation of p- and n-FETs enabled by self-formed gate dielectric and metal contacts on 2D tellurium
10.1002/adma.202418142 · 2025 · External reference
Wearable electronics based on 2D materials for human physiological information detection
10.1002/smll.201901124 · 2020 · External reference
2D materials for skin-mountable electronic devices
10.1002/adma.202005858 · 2021 · External reference
High detectivity and transparent few-layer MoS2/glassy-graphene heterostructure photodetectors
10.1002/adma.201706561 · 2018 · External reference
Waveguide-integrated van der Waals heterostructure photodetector at telecom wavelengths with high speed and high responsivity
10.1038/s41565-019-0602-z · 2020 · External reference
Gate-controlled field emission current from MoS2 nanosheets
10.1002/aelm.202000838 · 2021 · External reference
Field emission characterization of MoS2 nanoflowers
10.3390/nano9050717 · 2019 · External reference
Integrated two-dimensional microwave transmitters fabricated on the wafer scale
10.1038/s41928-025-01452-9 · 2025 · External reference
Low power flexible monolayer MoS2 integrated circuits
10.1038/s41467-023-39390-9 · 2023 · External reference
Nonsegmented PSpice circuit model of GaN HEMT with simulation convergence consideration
10.1109/tie.2017.2721885 · 2017 · External reference
kV-class GaN-on-Si HEMTs enabling 99% efficiency converter at 800 V and 100 kHz
10.1109/tpel.2013.2284248 · 2014 · External reference
Review of technology for normally-off HEMTs with p-GaN gate
10.1016/j.mssp.2017.09.027 · 2018 · External reference
10.1002/9781119594406
10.1002/9781119594406 · External reference
A review on the GaN-on-Si power electronic devices
10.1016/j.fmre.2021.11.028 · 2022 · External reference
GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling
10.1063/1.3140614 · 2009 · External reference
Chip-level thermal management in GaN HEMT: Critical review on recent patents and inventions
10.1016/j.mee.2023.111958 · 2023 · External reference
New trench gate power MOSFET with high breakdown voltage and reduced on-resistance using a SiGe zone in drift region
10.1016/j.cap.2012.03.023 · 2012 · External reference
Scaling of MoS2 transistors and inverters to sub-10 nm channel length with high performance
10.1021/acs.nanolett.3c00031 · 2023 · External reference
Benchmarking monolayer MoS2 and WS2 field-effect transistors
10.1038/s41467-020-20732-w · 2021 · External reference
Electrostatic-repulsion-based transfer of van der Waals materials
10.1038/s41586-025-09510-0 · 2025 · External reference
Self-heating effect in a MoS2 field-effect transistor and improved heat dissipation by the BN capping layer
10.1021/acsaelm.3c01469 · 2024 · External reference
Improved self-heating in short-channel monolayer WS2 transistors with high-thermal conductivity BeO dielectrics
10.1021/acs.nanolett.2c02901 · 2022 · External reference
High-performance poly-Si TFT with ultra-thin channel film and gate oxide for low-power application
10.1088/0268-1242/30/10/105017 · 2015 · External reference
High-voltage amorphous InGaZnO TFT with Al2O3 high-k dielectric for low-temperature monolithic 3-D integration
10.1109/ted.2016.2598396 · 2016 · External reference
High-frequency ZnO thin-film transistors on Si substrates
10.1109/led.2009.2025672 · 2009 · External reference
Mobility-stability trade-off in oxide thin-film transistors
10.1038/s41928-021-00671-0 · 2021 · External reference
Multiple short pulse process for low-temperature atomic layer deposition and its transient steric hindrance
10.1063/1.5095515 · 2019 · External reference
Thickness dependence of the dielectric constant and resistance of Al2O3 films
10.1063/1.323603 · 1977 · External reference
Design, simulation and optimization of multi-layered MoS2 based FET devices
10.1088/2631-8695/ac3d11 · 2021 · External reference
