Research graph
References from Study on Electrical Behavior of TiO2 and ZnO Nanostructures: Resistive Switching and State Retention Under Pressure and Temperature Conditions. Local targets link to admitted publications; unresolved targets remain external evidence.
Memristor-the missing circuit element
10.1109/tct.1971.1083337 · 2003 · External reference
The missing memristor found
10.1038/nature06932 · 2008 · External reference
10.3390/cryst13030416
10.3390/cryst13030416 · External reference
Morphology and Structure of Defected Niobium Oxide Nonuniform Arrays Formed by Anodizing Bilayer Al/Nb Systems
10.1134/s1063784220110213 · 2020 · External reference
Emerging materials for resistive switching memories: Prospects for enhanced sustainability and performance for targeted applications
10.1063/5.0237386 · 2024 · External reference
10.3389/fchem.2020.00724
10.3389/fchem.2020.00724 · External reference
ZnO nanowire UV photodetectors: At the intersection of flexibility, biocompatibility, and visible blindness
10.1016/j.mattod.2024.11.004 · 2025 · External reference
Valence change bipolar resistive switching accompanied with magnetization switching in CoFe2O4 thin film
10.1038/s41598-017-12579-x · 2017 · External reference
Resistive switching behavior in ZnO: Ca thin films deposited by a pulsed laser deposition technique
10.1007/s00339-023-06508-1 · 2023 · External reference
Magnetic switching control in Co/TiO2 bilayer and TiO2:Co thin films for magnetic-resistive random access memories (M-RRAM)
10.1016/j.jallcom.2020.155674 · 2020 · External reference
Donor impurity band exchange in dilute ferromagnetic oxides
10.1038/nmat1310 · 2005 · External reference
10.1371/journal.pone.0168515
10.1371/journal.pone.0168515 · External reference
Tuning resistive switching in ZnO and TiO2 nanostructures with cobalt doping
10.1007/s10854-025-14348-3 · 2025 · External reference
Effects of oxygen and moisture on the I-V characteristics of TiO2 thin films
2018 · External reference
Structure-Dependent Influence of Moisture on Resistive Switching Behavior of ZnO Thin Films
10.1002/admi.202100915 · 2021 · External reference
Investigating the Temperature Effects on ZnO, TiO2, WO3 and HfO2 Based Resistive Random Access Memory (RRAM) Devices
10.21272/jnep.8(4(1)).04030 · 2016 · External reference
Unravelling the data retention mechanisms under thermal stress on 2D memristors
10.1021/acsomega.3c03200 · 2023 · External reference
10.3390/s20020562
10.3390/s20020562 · External reference
Bias voltage induced-electrical conductivity at electrode interfaces of a rutile TiO2 single crystal: Two different mechanisms depending on temperature
10.1016/j.surfin.2023.103703 · 2024 · External reference
Lattice dynamics and Raman spectrum of rutile TiO2: The role of soft phonon modes in pressure induced phase transition
10.1016/j.matchemphys.2012.09.022 · 2012 · External reference
TiO2 and TiO2:Co nanostructures for enhanced non-volatile memory: Insights into surface modification
10.1016/j.ceramint.2025.06.056 · 2025 · External reference
Magnetic behavior and conductive wall switching in TiO2 and TiO2:Co self-organized nanotube arrays
10.1016/j.jallcom.2020.154006 · 2020 · External reference
Raman study of surface optical phonons in ZnO(Co) nanoparticles prepared by hydrothermal method
10.2298/hemind121022119h · 2013 · External reference
Phonon confinement and size effect in Raman spectra of ZnO nanoparticles
10.1016/j.heliyon.2019.e01222 · 2019 · External reference
10.3390/cryst15060574
10.3390/cryst15060574 · External reference
XPS characterization of thin (Al2O3)x(TiO2)1-x films deposited on silicon
10.1088/1742-6596/113/1/012036 · 2008 · External reference
Recommended strategies for quantifying oxygen vacancies with X-ray photoelectron spectroscopy
10.1016/j.jeurceramsoc.2024.116709 · 2024 · External reference
Basic properties of the F-type centers in halides, oxides and perovskites
10.1016/j.nimb.2010.05.053 · 2010 · External reference
Mechanistic understanding of gas sensing in palladium nanoparticles-decorated porous ZnO nanosheets: Correlating energy barrier and ionized oxygen species with sensing performance
10.1016/j.snr.2025.100422 · 2026 · External reference
Thickness dependence of the resistive switching behavior of nonvolatile memory device structures based on undoped ZnO films
10.1016/j.ssc.2011.08.036 · 2011 · External reference
Zinc and cadmium: XPS chemical state determination and auger peak curve-fitting procedures
10.1016/j.apsusc.2026.166284 · 2026 · External reference
10.3390/ma18163820
10.3390/ma18163820 · External reference
Realization of resistive switching and magnetoresistance in ZnO/ZnO-Co composite materials
10.1038/srep31934 · 2016 · External reference
Structure-Dependent Influence of Moisture on Resistive Switching Behavior of ZnO Thin Films
10.1002/admi.202100915 · ExternalCitation · doi-reference
Resistive switching behavior in ZnO: Ca thin films deposited by a pulsed laser deposition technique
10.1007/s00339-023-06508-1 · ExternalCitation · doi-reference
Tuning resistive switching in ZnO and TiO2 nanostructures with cobalt doping
10.1007/s10854-025-14348-3 · ExternalCitation · doi-reference
Zinc and cadmium: XPS chemical state determination and auger peak curve-fitting procedures
10.1016/j.apsusc.2026.166284 · ExternalCitation · doi-reference
TiO2 and TiO2:Co nanostructures for enhanced non-volatile memory: Insights into surface modification
10.1016/j.ceramint.2025.06.056 · ExternalCitation · doi-reference
Phonon confinement and size effect in Raman spectra of ZnO nanoparticles
10.1016/j.heliyon.2019.e01222 · ExternalCitation · doi-reference
Magnetic behavior and conductive wall switching in TiO2 and TiO2:Co self-organized nanotube arrays
10.1016/j.jallcom.2020.154006 · ExternalCitation · doi-reference
Magnetic switching control in Co/TiO2 bilayer and TiO2:Co thin films for magnetic-resistive random access memories (M-RRAM)
10.1016/j.jallcom.2020.155674 · ExternalCitation · doi-reference
Recommended strategies for quantifying oxygen vacancies with X-ray photoelectron spectroscopy
10.1016/j.jeurceramsoc.2024.116709 · ExternalCitation · doi-reference
Lattice dynamics and Raman spectrum of rutile TiO2: The role of soft phonon modes in pressure induced phase transition
10.1016/j.matchemphys.2012.09.022 · ExternalCitation · doi-reference
ZnO nanowire UV photodetectors: At the intersection of flexibility, biocompatibility, and visible blindness
10.1016/j.mattod.2024.11.004 · ExternalCitation · doi-reference
Basic properties of the F-type centers in halides, oxides and perovskites
10.1016/j.nimb.2010.05.053 · ExternalCitation · doi-reference
Mechanistic understanding of gas sensing in palladium nanoparticles-decorated porous ZnO nanosheets: Correlating energy barrier and ionized oxygen species with sensing performance
10.1016/j.snr.2025.100422 · ExternalCitation · doi-reference
Thickness dependence of the resistive switching behavior of nonvolatile memory device structures based on undoped ZnO films
10.1016/j.ssc.2011.08.036 · ExternalCitation · doi-reference
Bias voltage induced-electrical conductivity at electrode interfaces of a rutile TiO2 single crystal: Two different mechanisms depending on temperature
10.1016/j.surfin.2023.103703 · ExternalCitation · doi-reference
Unravelling the data retention mechanisms under thermal stress on 2D memristors
10.1021/acsomega.3c03200 · ExternalCitation · doi-reference
The missing memristor found
10.1038/nature06932 · ExternalCitation · doi-reference
Donor impurity band exchange in dilute ferromagnetic oxides
10.1038/nmat1310 · ExternalCitation · doi-reference
Valence change bipolar resistive switching accompanied with magnetization switching in CoFe2O4 thin film
10.1038/s41598-017-12579-x · ExternalCitation · doi-reference
Realization of resistive switching and magnetoresistance in ZnO/ZnO-Co composite materials
10.1038/srep31934 · ExternalCitation · doi-reference
Emerging materials for resistive switching memories: Prospects for enhanced sustainability and performance for targeted applications
10.1063/5.0237386 · ExternalCitation · doi-reference
XPS characterization of thin (Al2O3)x(TiO2)1-x films deposited on silicon
10.1088/1742-6596/113/1/012036 · ExternalCitation · doi-reference
Memristor-the missing circuit element
10.1109/tct.1971.1083337 · ExternalCitation · doi-reference
Morphology and Structure of Defected Niobium Oxide Nonuniform Arrays Formed by Anodizing Bilayer Al/Nb Systems
10.1134/s1063784220110213 · ExternalCitation · doi-reference
10.1371/journal.pone.0168515
10.1371/journal.pone.0168515 · ExternalCitation · doi-reference
Investigating the Temperature Effects on ZnO, TiO2, WO3 and HfO2 Based Resistive Random Access Memory (RRAM) Devices
10.21272/jnep.8(4(1)).04030 · ExternalCitation · doi-reference
Raman study of surface optical phonons in ZnO(Co) nanoparticles prepared by hydrothermal method
10.2298/hemind121022119h · ExternalCitation · doi-reference
10.3389/fchem.2020.00724
10.3389/fchem.2020.00724 · ExternalCitation · doi-reference
10.3390/cryst13030416
10.3390/cryst13030416 · ExternalCitation · doi-reference
10.3390/cryst15060574
10.3390/cryst15060574 · ExternalCitation · doi-reference
10.3390/ma18163820
10.3390/ma18163820 · ExternalCitation · doi-reference
10.3390/s20020562
10.3390/s20020562 · ExternalCitation · doi-reference
